Imiterere n'Icyerekezo cy'Ikoranabuhanga ryo Gutunganya Wafer rya SiC

Nk'ibikoresho bya semiconductor substrate byo mu gisekuru cya gatatu,karubide ya silikoni (SiC)Crystal imwe ifite amahirwe menshi yo gukoreshwa mu gukora ibikoresho by'ikoranabuhanga bikoresha imbaraga nyinshi kandi bikoresha imbaraga nyinshi. Ikoranabuhanga ryo gutunganya SiC rigira uruhare rukomeye mu gukora ibikoresho by'ingenzi bya substrate. Iyi nkuru igaragaza uko ubushakashatsi buhagaze ubu ku ikoranabuhanga ryo gutunganya SiC haba mu Bushinwa no mu mahanga, isesengura kandi igereranya uburyo bwo gukata, gusya no gusiga irangi, ndetse n'uburyo bwo gusya irangi no gusya ubuso. Igaragaza kandi imbogamizi zihari mu gutunganya SiC irangi no kuganira ku cyerekezo cy'iterambere ry'ejo hazaza.

Karubide ya silikoni (SiC)Wafers ni ibikoresho by'ingenzi by'ibanze ku bikoresho bya semiconductor byo mu gisekuru cya gatatu kandi bifite akamaro kanini n'ubushobozi bunini ku isoko mu nzego nka microelectronics, power electronics, n'amatara ya semiconductor. Bitewe n'ubukana bwinshi cyane n'ubudahangarwa bwa shimi bwaKristale imwe ya SiC, uburyo gakondo bwo gutunganya semiconductor ntabwo bukwiriye neza mu buryo bwo kuzitunganya. Nubwo amasosiyete menshi mpuzamahanga yakoze ubushakashatsi bwimbitse ku gutunganya kristu imwe ya SiC mu buryo busaba imbaraga mu bya tekiniki, ikoranabuhanga rijyanye nabyo rigirwa ibanga rikomeye.

Mu myaka ya vuba aha, Ubushinwa bwongereye imbaraga mu guteza imbere ibikoresho n'ibikoresho bya SiC single crystal. Ariko, iterambere ry'ikoranabuhanga rya SiC mu gihugu muri iki gihe ribangamiwe n'imbogamizi mu ikoranabuhanga ryo gutunganya no kunoza ubwiza bwa wafer. Kubwibyo, ni ngombwa ko Ubushinwa bunoza ubushobozi bwo gutunganya SiC kugira ngo bwongere ubwiza bwa SiC single crystal substrates kandi bugere ku ikoreshwa ryabyo mu buryo bufatika no ku bwinshi.

Intambwe z'ingenzi zo gutunganya zirimo: gukata → gusya cyane → gusya neza → gusya neza (gusukura neza) → gusukura neza (gusukura neza mu buryo bwa shimi, CMP) → kugenzura.

Gukata kristu imwe ya SiC

Mu itunganywa ryaKristale imwe ya SiCGukata ni intambwe ya mbere kandi y'ingenzi cyane. Impinduka z'ubugari bwa wafer, imiterere y'ubugari, n'ubugari bwose (TTV) bikomoka ku gukata bigena ubwiza n'ubushobozi bw'ibikorwa byo gusya no gusiga irangi nyuma yaho.

Ibikoresho byo gukata bishobora gushyirwa mu byiciro hakurikijwe imiterere yabyo: imikero y'imbere ya diyama (ID), imikero y'inyuma ya diyama (OD), imikero y'umurambararo, n'imikero y'insinga. Imikero y'insinga, na yo, ishobora gushyirwa mu byiciro hakurikijwe ubwoko bwayo bw'imigendekere mu buryo bw'insinga zisubiranamo n'izidashira (zitagira iherezo). Hashingiwe ku buryo bwo gukata bw'imikero y'insinga, uburyo bwo gukata insinga bushobora kugabanywamo ubwoko bubiri: gukata insinga z'ubuntu n'ugukata insinga z'icyuma z'ubwoko bwa diyama.

1.1 Uburyo gakondo bwo gutema

Ubujyakuzimu bw'inkero zo hanze (OD) bugengwa n'umurambararo w'icyuma. Mu gihe cyo gukata, icyuma gikunze kunyeganyega no guhinduka, bigatera urusaku rwinshi no gukomera nabi. Inkero zo imbere (ID) zikoresha diyama zigabanya ubukana ku muzenguruko w'icyuma nk'inkero zo gukata. Izi nkero zishobora kuba ntoya nka mm 0.2. Mu gihe cyo gukata, icyuma cya ID kizunguruka ku muvuduko mwinshi mu gihe ibikoresho bigomba gukatwa bigenda binyura hagati y'icyuma, bigatuma bicibwa muri ubu buryo.

Udupira twa diyama dukenera guhagarara no gusubira inyuma kenshi, kandi umuvuduko wo gukata ni muto cyane—ubusanzwe nturenze 2 m/s. Nanone duhura n’ikibazo cyo kwangirika gukomeye kwa mashini no kugabanya ikiguzi cyo kubungabunga. Bitewe n’ubugari bw’icyuma cy’uruti, umurambararo wo gukata ntushobora kuba muto cyane, kandi gukata uduce twinshi ntibishoboka. Ibi bikoresho gakondo byo gukata bigengwa n’ubukomere bw’ishingiro kandi ntibishobora gukata cyangwa kugira imirasire igabanya umuvuduko. Bishobora gukata gusa, gukora imigozi minini, gutanga umusaruro muke, bityo ntibikwiriye gukata.Kristale za SiC.

1.2 Gukata insinga nyinshi ku buntu hakoreshejwe uburyo bwa Abrasive Wire Saw

Uburyo bwo gukata insinga zikozwe mu buryo bwa free abrasive bukoresha uburyo bwihuse bwo kugenda kw'insinga kugira ngo zijyane ubushyuhe mu gisenge, bigatuma ibikoresho bikurwaho. Bukoresha cyane cyane imiterere ihuza kandi ubu ni uburyo bumaze igihe kandi bukoreshwa cyane mu gukata neza silicon imwe ikoze mu buryo bwa "single-crystal". Ariko, ikoreshwa ryayo mu gukata SiC ntiryigishijwe cyane.

Udupira tw’insinga dukoreshwa ku buntu dushobora gutunganya udupira dufite ubugari buri munsi ya μm 300. Ntidutanga igihombo kinini ku gice cy’imbere cy’inyuma, gake gatera gucikamo ibice, kandi bigatuma ubuso bugira ubwiza bwiza. Ariko, bitewe n’uburyo bwo gukuraho ibikoresho—bishingiye ku kuzunguruka no gupfundika kw’udupira—ubuso bwa wafer bukunda kugira stress ikomeye, uduce duto, n’ibindi bice byangiritse cyane. Ibi bituma wafer ihinduka, bigatuma bigorana kugenzura neza imiterere y’ubuso, kandi byongera umutwaro ku ntambwe zikurikira zo gutunganya.

Imikorere yo gukata iterwa cyane n'urusenda; ni ngombwa kugira ngo hakomeze kuba ubukana bw'udusimba two gukata no gupima urusenda. Gutunganya no kongera gukoresha urusenda birahenda. Mu gukata udusimba tunini, udusimba two gukata urusenda tugorwa no kwinjira mu dusimba twinshi n'utundi. Mu gihe cy'ingano imwe y'udusimba two gukata urusenda, igihombo cyarwo kiba kinini kuruta icy'udusimba two gukata urusenda.

1.3 Imashini Icana Insinga Zikozwe mu Nsinga za Diyama Zikozwe mu Nsinga Zitandukanye

Inkero za diyama zikozwe mu buryo bwa abrasive zikorwa hakoreshejwe uburyo bwo gushyira uduce twa diyama ku cyuma gikozwe mu buryo bwa electroplating, sintering, cyangwa resin bonding. Inkero za diyama zikozwe mu buryo bwa electroplating zitanga ibyiza nko kuba kerfs zifunganye, ubwiza bwo gukata neza, imikorere myiza, umwanda muke, ndetse no gushobora gukata ibikoresho bikomeye.

Uburyo bwo gukata SiC bukoresha amashanyarazi bukoreshwa cyane muri iki gihe. Ishusho ya 1 (itagaragara hano) igaragaza ubugari bw'ubuso bw'udupira twa SiC duciwe hakoreshejwe ubu buryo. Uko gukata bigenda birushaho kwiyongera, udupira twa wafer dushyirwa mu gikoresho. Ibi biterwa nuko agace gahuza insinga n'ibikoresho kagenda kazamuka uko insinga imanuka, bigatuma insinga zikomeza kugwa. Iyo insinga igeze ku murambararo ntarengwa wa wafer, guhindagurika kwayo kuba ku rwego rwo hejuru, bigatuma habaho guhindagurika cyane.

Mu ntambwe za nyuma zo gukata, bitewe n'uko insinga zigenda zihuta, zigenda zihindagurika, zigabanuka, zihagarara, kandi zigasubira inyuma, hamwe n'ingorane zo gukuraho imyanda hakoreshejwe icyuma gikonjesha, ubwiza bw'ubuso bwa wafer buragabanuka. Guhindura insinga no guhinduka kw'umuvuduko, kimwe n'uduce duto twa diyama ku nsinga, ni byo bintu by'ingenzi bituma ubuso bucika.

1.4 Ikoranabuhanga ryo Gutandukanya Ibicurane

Gutandukanya kristu imwe ya SiC mu buryo bukonje ni inzira nshya mu bijyanye no gutunganya ibikoresho bya semiconductor byo mu gisekuru cya gatatu. Mu myaka ya vuba aha, byakuruye abantu benshi bitewe n'inyungu zabyo zikomeye mu kunoza umusaruro no kugabanya igihombo cy'ibikoresho. Ikoranabuhanga rishobora gusesengurwa mu ngingo eshatu: ihame ry'imikorere, imikorere, n'inyungu z'ingenzi.

Kumenya aho kristu iherereye no gusya inyuma y’umurambararo: Mbere yo gutunganya, icyerekezo cya kristu cya ingot ya SiC kigomba kumenyekana. Hanyuma ingot ihinduka imiterere y’umurambararo (ikunze kwitwa SiC puck) binyuze mu gusya inyuma y’umurambararo. Iyi ntambwe ishyiraho urufatiro rwo gukata no gukata icyerekezo gikurikiraho.

Gukata insinga nyinshi: Ubu buryo bukoresha uduce duto duto duhujwe n'insinga zo gukata kugira ngo tugabanye ingot y'umuzenguruko. Ariko, ifite ikibazo gikomeye cyo gutakaza inkingi no kutagera ku buso.

Ikoranabuhanga ryo Gukata Lazeri: Lazeri ikoreshwa mu gukora urwego rwahinduwe muri kristu, aho ibice bito bishobora gukurwaho. Ubu buryo bugabanya igihombo cy'ibikoresho kandi bukongera imikorere myiza yo gutunganya, bigatuma iba icyerekezo gishya cyizewe cyo gukata SiC wafer.

Gutunganya Uburyo bwo Gukata

Gukata insinga nyinshi zitagira insinga: Ubu ni bwo buryo bukoreshwa cyane, bujyanye neza n'imiterere ikomeye ya SiC.

Imashini zisohora umuriro w'amashanyarazi (EDM) n'ikoranabuhanga ryo gutandukanya ibintu mu buryo bukonje: Ubu buryo butanga ibisubizo bitandukanye bihuye n'ibikenewe byihariye.

Uburyo bwo gusiga: Ni ngombwa kuringaniza igipimo cyo gukuraho ibikoresho n'ubwangirike bw'ubuso. Gusiga irangi rya shimi (CMP) bikoreshwa kugira ngo binoze uburinganire bw'ubuso.

Gukurikirana mu gihe nyacyo: Ikoranabuhanga ryo kugenzura kuri interineti ryashyizweho kugira ngo rikurikirane ubukana bw'ubuso mu gihe nyacyo.

Gukata hakoreshejwe laser: Ubu buryo bugabanya igihombo cya kerf kandi bugabanye ingendo zo gutunganya, nubwo agace kagizweho ingaruka n'ubushyuhe kakiri ikibazo.

Ikoranabuhanga ryo gutunganya ibintu mu buryo buvanze: Guhuza uburyo bwa mekanike n'ubutabire byongera imikorere myiza.

Iri koranabuhanga ryamaze gukoreshwa mu nganda. Urugero, Infineon yaguze SILTECTRA none ubu ifite patenti z'ingenzi zishyigikira ikorwa ry'udupira twa santimetero 20. Mu Bushinwa, amasosiyete nka Delong Laser yageze ku musaruro wa wafers 30 kuri buri ingot yo gutunganya wafers za santimetero 20, bigaragaza iterambere rya 40% ugereranyije n'uburyo gakondo.

Uko inganda zo mu gihugu zigenda ziyongera, iyi koranabuhanga ryitezweho kuba igisubizo nyamukuru cyo gutunganya substrate ya SiC. Bitewe n'ubwiyongere bw'umurambararo w'ibikoresho bya semiconductor, uburyo gakondo bwo gukata bwarashaje. Mu mahitamo ariho ubu, ikoranabuhanga ryo gukata insinga za diyama rigaragaza amahirwe menshi yo gukoresha. Gukata hakoreshejwe laser, nk'uburyo bugezweho, bitanga inyungu zikomeye kandi byitezwe ko bizaba uburyo bw'ibanze bwo gukata mu gihe kizaza.

2,Gusya SiC Single Crystal

Nk’uko bihagarariye semiconductors zo mu gisekuru cya gatatu, silicon carbide (SiC) itanga inyungu zikomeye bitewe n’icyuho cyayo kinini, ingufu z’amashanyarazi zigabanuka cyane, umuvuduko mwinshi wa electron drift, hamwe n’ubushyuhe bwiza cyane. Iyi miterere ituma SiC iba ingirakamaro cyane mu mikoreshereze ya voltage nyinshi (urugero, ibidukikije bya 1200V). Ikoranabuhanga ryo gutunganya substrates za SiC ni igice cy’ingenzi mu gukora ibikoresho. Ubwiza bw’ubuso n’ubuziranenge bwa substrate bigira ingaruka zitaziguye ku bwiza bw’urwego rwa epitaxial n’imikorere y’igikoresho cya nyuma.

Intego y'ibanze y'igikorwa cyo gusya ni ugukuraho ibimenyetso by'uruti rw'umucanga n'ibice byangiritse byatewe no gukata, no gukosora imiterere y'uruti iterwa n'igikorwa cyo gukata. Bitewe n'ubukana bukabije bwa SiC, gusya bisaba gukoresha ibintu bikomeye nka boron carbide cyangwa diyama. Gusya bisanzwe bikunze kugabanywamo ibice bibiri: gusya cyane no gusya neza.

2.1 Gusya neza no gusya neza

Gusya bishobora gushyirwa mu byiciro hashingiwe ku bunini bw'uduce duto duto:

Gusya cyane: Bikoresha ibikoresho binini cyane cyane mu gukuraho ibimenyetso by'urukero n'ibice byangiritse byatewe no gukata, bikongera imikorere myiza yo gutunganya.

Gusya neza: Bikoresha ibikoresho byoroshye cyane kugira ngo bikureho urwego rwangiritse rusigaye mu gusya cyane, bigabanya ubukana bw'ubuso, kandi binoze ubwiza bw'ubuso.

Inganda nyinshi zo mu rugo zikora uduce duto twa SiC zikoresha uburyo bunini bwo gukora. Uburyo busanzwe bukoresha uburyo bwo gusya impande ebyiri hakoreshejwe icyuma gikozwe mu cyuma n'urusenda rwa diyama rwa monocrystalline. Ubu buryo bukuraho neza urwego rwangiritse rusigaye hakoreshejwe insinga, bukosora imiterere ya wafer, kandi bugabanya TTV (Total Thickness Variation), Umugongo, na Warp. Igipimo cyo gukuraho ibikoresho kirahamye, akenshi kigera kuri 0.8–1.2 μm/min. Ariko, ubuso bwa wafer buvamo ni butameze neza kandi bufite ubukana bwinshi—ubusanzwe hafi 50 nm—bituma hakenerwa byinshi ku ntambwe zikurikiraho zo gukosora.

2.2 Gusya ku ruhande rumwe

Gusya uruhande rumwe gusa bikorerwa uruhande rumwe icyarimwe. Muri iki gikorwa, wafer ishyirwa ku isahani y'icyuma hakoreshejwe ishashi. Iyo ikoreshejwe igitutu, substrate ihinduka gato, hanyuma ubuso bwo hejuru buragororoka. Nyuma yo gusya, ubuso bwo hasi buragororoka. Iyo igitutu kivuyeho, ubuso bwo hejuru bukunda gusubirana imiterere yabwo ya mbere, ibyo bikagira ingaruka no ku buso bwo hasi busanzwe - bigatuma impande zombi zigorama kandi zigahinduka nk'izigororotse.

Byongeye kandi, isahani yo gusya ishobora gupfuka mu gihe gito, bigatuma wafer iba ipfukamye. Kugira ngo isahani ikomeze kuba ipfukamye, hakenewe gupfuka kenshi. Bitewe n'ubushobozi buke no kuba wafer idapfukamye neza, gusya ku ruhande rumwe ntibyiza mu gukora byinshi.

Ubusanzwe, amapine yo gusya #8000 akoreshwa mu gusya neza. Mu Buyapani, ubu buryo buba bumaze igihe kinini kandi bukoresha amapine yo gusya #30000. Ibi bituma ubuso bw'amapine yatunganyijwe bugera munsi ya nanometero 2, bigatuma amapine yiteguye gukoreshwa mu gusya neza nta yandi mapine y'inyongera.

2.3 Ikoranabuhanga ryo Kugabanya Impande Imwe

Ikoranabuhanga ryo gusya uruhande rumwe rwa Diamond ni uburyo bushya bwo gusya uruhande rumwe. Nkuko bigaragara ku Ishusho ya 5 (itagaragara hano), uburyo bwo gusya bukoresha isahani isya ifite diyama. Wafer ishyirwaho hakoreshejwe uburyo bwo gusya imvange, mu gihe wafer n'uruziga rwa diyama byombi bizenguruka icyarimwe. Uruziga rusya rugenda rumanuka buhoro buhoro kugira ngo wafer igere ku bunini bw'intego. Nyuma y'uko uruhande rumwe rurangiye, wafer irahindurirwa kugira ngo itunganywe urundi ruhande.

Nyuma yo kugabanya, wafer ya mm 100 ishobora kugera kuri ibi bikurikira:

Umuheto < 5 μm

TTV < 2 μm

Ubushyuhe bw'ubuso < 1 nm

Ubu buryo bwo gutunganya umugati umwe butanga ituze ryinshi, ubwumvikane bwiza, kandi butuma ibikoresho bikurwaho ku gipimo cyo hejuru. Ugereranyije n'uburyo busanzwe bwo gusya bukoresha impande ebyiri, ubu buryo bwongera ubushobozi bwo gusya ku kigero kirenga 50%.

2.4 Gusya ku mpande ebyiri

Gusya ku mpande ebyiri bikoresha isahani yo hejuru n'iyo hasi kugira ngo icyarimwe bisya impande zombi z'ubutaka, bigatuma ubuso burushaho kuba bwiza ku mpande zombi.

Mu gihe cyo gukora, ibyuma bisya bibanza gushyira igitutu ku ngingo zo hejuru z'umuti, bigatera guhindagurika no gukuraho ibikoresho buhoro buhoro kuri izo ngingo. Uko ahantu hanini hagenda hangana, igitutu ku gice cy'umuti gitangira kugenda kimwe buhoro buhoro, bigatuma habaho guhindagurika guhoraho ku buso bwose. Ibi bituma ubuso bwo hejuru n'ubwo hasi bushobora gusya neza. Iyo gusya birangiye kandi igitutu kikarekurwa, buri gice cy'igice cy'umuti gisubirana kimwe bitewe n'igitutu kingana cyabayeho. Ibi bituma habaho guhindagurika guke no kugorama neza.

Ubukana bw'ubuso bw'umugati nyuma yo gusya buterwa n'ingano y'uduce duto dutanga ubuso bworoshye. Iyo ukoresheje uduce duto duto duto duto mu gusya ku mpande ebyiri, ubugari bw'umugati n'ubugari bishobora kugenzurwa muri 5 μm. Ibipimo bya Mikroskopi ya Atomiki (AFM) bigaragaza ubukana bw'ubuso (Rq) bungana na 100 nm, aho utwobo two gusya dufite ubujyakuzimu bwa 380 nm kandi ibimenyetso bigaragara bituruka ku bikorwa byo gusya.

Uburyo bugezweho bukoresha uburyo bwo gusya bukoresheje impande ebyiri hakoreshejwe polyurethane foam pads hamwe n'urusenda rwa polycrystalline diamond. Ubu buryo butanga wafers zifite ubuso buto cyane, bigatuma Ra < 3 nm, bikaba ingirakamaro cyane mu gusya SiC substrates nyuma yaho.

Ariko, gushwanyaguza ubuso biracyari ikibazo kitakemutse. Byongeye kandi, diyama ya polycrystalline ikoreshwa muri ubu buryo ikorwa hakoreshejwe uburyo bwo gukwirakwiza ibintu mu buryo buturika, ibyo bikaba bigoye mu rwego rwa tekiniki, bigatanga umusaruro muto, kandi bikaba bihenze cyane.

Gutunganya SiC Single Crystals

Kugira ngo haboneke ubuso bwiza busesuye ku dupapuro twa silikoni (SiC) wafers, gusiga irangi bigomba gukuraho burundu imyobo isya n'udupira two hejuru. Intego ni ugukora ubuso bworoshye, budafite inenge budafite umwanda cyangwa kwangirika, nta kwangirika kw'ubutaka, kandi nta gusigara k'ubuso.

3.1 Gutunganya imashini na CMP bya SiC Wafers

Nyuma yo gukura kwa ingot ya kristale imwe ya SiC, inenge zo ku buso zituma idakoreshwa mu buryo butaziguye mu gukura kwa epitaxial. Kubwibyo, hakenewe gukomeza gutunganya. Ingot ibanza kuba ishusho isanzwe ya cylindrical binyuze mu kuyizunguruka, hanyuma ikagabanywamo wafer hakoreshejwe insinga, hanyuma hagakurikiraho kugenzura icyerekezo cya crystallographic. Gusukura ni intambwe y'ingenzi mu kunoza ubwiza bwa wafer, bigakemura ibibazo bishobora kwangirika ku buso biterwa n'ingaruka mbi zo gukura kwa kristale n'intambwe zo gutunganya mbere.

Hari uburyo bune bw'ingenzi bwo gukuraho ibice byangiritse ku buso kuri SiC:

Gusukura hakoreshejwe ikoranabuhanga: Byoroshye ariko bisiga imishwanyaguro; birakwiriye gusukura bwa mbere.

Gusukura hakoreshejwe imiti (CMP): Bikuraho iminkanyari binyuze mu gusiga imiti; bibereye gusukura neza.

Gukata hydrogen: Bisaba ibikoresho bigoye, bikunze gukoreshwa mu bikorwa bya HTCVD.

Gusukura hakoreshejwe plasma: Ni ibintu bigoye kandi bidakunze gukoreshwa.

Gusukura hakoreshejwe ikoranabuhanga gusa bikunze gutera gushwanyagurika, mu gihe gusukura hakoreshejwe ikoranabuhanga gusa bishobora gutuma habaho gushwanyagurika ku buryo butaringaniye. CMP ihuza ibyiza byombi kandi itanga igisubizo cyiza kandi gihendutse.

Ihame ry'imikorere rya CMP

CMP ikora izunguruka wafer munsi y'umuvuduko uhamye ukoresheje agapira gapima ikirere. Uku kugenda, hamwe no gushwanyagurika kwa mekanike kuva ku bintu binini bya nano-sbrasive mu gice cy'amazi n'imikorere ya shimi y'ibintu bihindura imiterere y'amazi, bituma ubuso buhinduka.

Ibikoresho by'ingenzi byakoreshejwe:

Igikoresho cyo gusiga: Gikubiyemo ibintu bigabanya ubushyuhe n'ibinyabutabire.

Ipantalo yo gusiga: Irashira mu gihe cyo kuyikoresha, ikagabanya ingano y'imyenge n'uburyo bwo kuyishyiramo. Gusiga imyenda isanzwe, akenshi hakoreshejwe agakoresho ko gusigamo diyama, birakenewe kugira ngo wongere ubukana.

Inzira isanzwe ya CMP

Irimo gukurura: 0.5 μm diyama irimo gukurura

Ubukana bw'ubuso bw'intego: ~0.7 nm

Gusukura hakoreshejwe ikoranabuhanga rya shimi:

Ibikoresho byo gusiga: AP-810 imashini isuka ku ruhande rumwe

Umuvuduko: 200 g/cm²

Umuvuduko wa plaque: 50 rpm

Umuvuduko w'icyuma gifata ibikoresho bya Ceramic: 38 rpm

Imiterere y'urusenda:

SiO₂ (uburemere bwa 30%, pH = 10.15)

0–70 wt% H₂O₂ (30 wt%, reagent grade)

Hindura pH kuri 8.5 ukoresheje 5 wt% KOH na 1 wt% HNO₃

Igipimo cy'urubura: Litiro 3/umunota, rusubirwamo

Iyi gahunda irushaho kunoza ubwiza bwa SiC wafer kandi ikujuje ibisabwa kugira ngo habeho ibikorwa byo mu rwego rwo hejuru.

Imbogamizi za tekiniki mu gutunganya imashini

SiC, nk'igikoresho cy'ikoranabuhanga gifite umuvuduko munini, igira uruhare runini mu nganda z'ibikoresho by'ikoranabuhanga. Kubera imiterere myiza y'umubiri n'iya chimique, kristu imwe ya SiC ikwiriye ahantu hakomeye cyane, nko mu bushyuhe bwinshi, inshuro nyinshi, imbaraga nyinshi, no kudakoresha imirasire. Ariko, imiterere yayo ikomeye kandi yoroshye itera imbogamizi zikomeye mu gusya no gusya.

Nk’inganda zikomeye ku isi zigenda zihinduka ziva kuri wafer za santimetero 6 zijya kuri santimetero 8, ibibazo nko kwangirika no kwangirika kwa wafer mu gihe cyo gutunganya byarushijeho kugaragara, bigira ingaruka ku musaruro. Gukemura ibibazo bya tekiniki bya substrates za SiC za santimetero 8 ubu ni igipimo cy’ingenzi cy’iterambere ry’inganda.

Mu gihe cya santimetero 8, gutunganya wafer ya SiC bihura n'imbogamizi nyinshi:

Gupima Wafer ni ngombwa kugira ngo hongerwe umusaruro wa chip kuri buri gice, kugabanya igihombo cy’inkombe, no kugabanya ikiguzi cyo gukora—cyane cyane bitewe n’ubwiyongere bw’abakenera ibikoresho by’amashanyarazi.

Nubwo gukura kwa kristu imwe ya santimetero 8 za SiC kwakuze, ibikorwa byo gusya no gusimbuza biracyahura n'imbogamizi, bigatuma umusaruro uba muke (40-50%) gusa.

Wafer nini zihura n'uburyo bugoye bwo gukwirakwiza igitutu, bikongera ingorane zo gucunga uburyo bwo gukosora no gupima umusaruro.

Nubwo ubunini bwa wafers za santimetero 20 buri hafi y’ubwa wafers za santimetero 20, zikunze kwangirika mu gihe cyo kuzikoresha bitewe n’umuvuduko no kuzizunguruka.

Kugira ngo bigabanye stress iterwa no gukata, gucikagurika no kwangirika, guca hakoreshejwe laser birakoreshwa cyane. Ariko:

Lasers ndende zikoresha amabara menshi zitera kwangirika k'ubushyuhe.

Imashini zikoresha imirasire migufi zikora imyanda ikomeye kandi zikongera urwego rw'ibyangiritse, bityo zikongera uburyo bwo gusiga irangi.

Imikorere yo gutunganya ibyuma bya SiC

Uruhererekane rw'ibikorwa rusange rukubiyemo:

Gukata icyerekezo

Gusya cyane

Gusya neza

Gusukura imashini

Intambwe ya nyuma yo gutunganya ikoranabuhanga rya "Chemical Mechanical Polishing" (CMP)

Guhitamo uburyo bwa CMP, imiterere y'inzira, no kunoza ibipimo ni ingenzi cyane. Mu nganda za semiconductor, CMP ni intambwe ifatika yo gukora wafer za SiC zifite ubuso bworoshye cyane, budafite inenge, kandi budafite kwangirika, ari ingenzi kugira ngo epitaxial ikure neza.

(a) Kura ingot ya SiC mu gikoresho cyo gutwikiramo;

(b) Kora imiterere y'ibanze ukoresheje icyuma cyo gusya cy'umurambararo wo hanze;

(c) Kumenya icyerekezo cya kristalo ukoresheje utudomo cyangwa utudomo two kuringaniza;

(d) Kata ingot mo uduce duto tw’ibumba ukoresheje uburyo bwo gukata insinga nyinshi;

(e) Kugera ku buryo bworoshye nk'indorerwamo binyuze mu ntambwe zo gusya no gusiga irangi.

Nyuma yo kurangiza intambwe zo gutunganya, impande z'inyuma za wafer ya SiC zikunze kuba zityaye, ibyo byongera ibyago byo gucikagurika mu gihe cyo kuyikoresha cyangwa kuyikoresha. Kugira ngo hirindwe ubwo busembwa, hakenewe gusya impande.

Uretse inzira gakondo zo gukata, uburyo bushya bwo gutegura wafer za SiC burimo ikoranabuhanga ryo guhuza. Ubu buryo butuma habaho gukora wafer binyuze mu guhuza urwego rworoshye rwa SiC rufite ibara rimwe ku gice cy’ingenzi (substrate) gishyigikira.

Ishusho ya 3 igaragaza uko inzira igenda:

Ubwa mbere, urwego rwa delamination rukorwa ku bujyakuzimu bwihariye ku buso bwa kristu imwe ya SiC binyuze mu gutera ion ya hydrogen cyangwa tekiniki nk'izo. Kristale imwe ya SiC yatunganyijwe ifatwa ku gice gishyigikiwe gihamye hanyuma igashyirwa ku gitutu n'ubushyuhe. Ibi bituma urwego rwa kristu imwe ya SiC rushobora kwimurwa no gutandukana neza n'urwego rushyigikiwe.

Urusobe rwa SiC rwatandukanyijwe rukorerwa isuku yo hejuru kugira ngo rugere ku buringanire bukenewe kandi rushobora kongera gukoreshwa mu bikorwa bikurikira byo guhuza. Ugereranyije no gukata kristu za SiC mu buryo busanzwe, ubu buryo bugabanya ikiguzi cy'ibikoresho bihenze. Nubwo hakiri imbogamizi mu bya tekiniki, ubushakashatsi n'iterambere birimo gutera imbere cyane kugira ngo habeho gukora wafer ku giciro gito.

Bitewe n’ubukana bwinshi n’ubudahangarwa bwa SiC mu bushyuhe bw’icyumba—bituma idahura n’ingaruka mbi ku bushyuhe bw’icyumba—hakenewe isuku y’imashini kugira ngo ikureho imyobo mito isya, igabanye kwangirika k’ubuso, ikureho iminkanyari, imyenge n’ibishishwa by’umuhondo, igabanye ubukana bw’ubuso, irusheho kuba ndende, irusheho kuba ndende, kandi irusheho kunoza ubwiza bw’ubuso.

Kugira ngo ubone ubuso bwiza kandi busesuye, ni ngombwa:

Hindura ubwoko bw'imitako itera uburyaryate,

Gabanya ingano y'uduce duto,

Kunoza ibipimo by'imikorere,

Hitamo ibikoresho byo gusiga n'udupira dufite ubukana buhagije.

Ishusho ya 7 igaragaza ko gusiga irangi ku mpande ebyiri hakoreshejwe 1 μm abrasives bishobora kugenzura ihindagurika ry’ubugari n’ubugari muri 10 μm, no kugabanya ubukana bw’ubuso kugeza kuri 0.25 nm.

3.2 Gusukura imashini zikoresha imiti (CMP)

Gutunganya hakoreshejwe uburyo bwa Chemical Mechanical Polishing (CMP) bihuza uburyo bwa ultrafine particles abrasion na chemical etching kugira ngo habeho ubuso bwiza kandi bugororotse ku bikoresho birimo gutunganywa. Ihame ry'ibanze ni iri:

Habaho uburyo bwo gusiga irangi hagati y’urusenda rusukura n’ubuso bw’urusenda, bigahinduka urwego rworoshye.

Guhuza uduce duto duto n'urwego rworoshye bikuraho ibikoresho.

Ibyiza bya CMP:

Itsinda ingorane zo gusiga irangi ry'imashini cyangwa iry'imiti gusa,

Igera ku igenamigambi mpuzamahanga n'iryo mu gihugu,

Ikora ubuso bufite ubugari bwinshi kandi bufite ubugari buke,

Nta cyangiritse ku buso cyangwa munsi y'ubutaka.

Mu buryo burambuye:

Agace k'isuku kagenda ugereranije n'agapira ko gusukura iyo gashyizwemo igitutu.

Ibikoresho byo mu bwoko bwa nanometer (urugero, SiO₂) biri mu rurenda bigira uruhare mu gukata, kugabanya imbaraga za Si–C covalent no kunoza gukuraho ibikoresho.

Ubwoko bw'amayeri ya CMP:

Gusukura ku buryo bworoshye: Gusukura ku buryo bworoshye (urugero, SiO₂) bishyirwa mu gitaka. Gukuraho ibikoresho bibaho binyuze mu gukurura ibice bitatu (wafer-pad-abrasive). Ingano y'ubushyuhe (ubusanzwe 60–200 nm), pH, n'ubushyuhe bigomba kugenzurwa neza kugira ngo birusheho kuba byiza.

Gutunganya neza: Ibikoresho byo gushushanya bishyirwa mu gice cyo gushushanya kugira ngo birinde guhurirana—ni byiza cyane mu gutunganya neza.

Isuku nyuma yo gusiga irangi:

Uduce twa wafer twasekuye tunyuramo:

Gusukura imiti (harimo no gukuraho amazi ya DI n'ibisigazwa by'ibimera),

Gusukura amazi hakoreshejwe DI, no

Kumisha azote ishyushye

kugira ngo hagabanywe umwanda wo hejuru.

Ubwiza n'imikorere y'ubuso

Ubukana bw'ubuso bushobora kugabanuka bukagera kuri Ra < 0.3 nm, bugahura n'ibisabwa na semiconductor epitaxy.

Igenamigambi Mpuzamahanga: Guhuza uburyo bwo koroshya no gukuraho ibikoresho bikoresha imiti bigabanya gushwanyagurika no gusibanganya, bigatuma birusha uburyo bworoshye bwo gukoresha imiti cyangwa imiti.

Ikora neza cyane: Ikwiriye ibikoresho bikomeye kandi byoroshye gukoresha nka SiC, hamwe n'igipimo cyo gukuraho ibikoresho kiri hejuru ya 200 nm/h.

Ubundi buryo bushya bwo gukosora

Uretse CMP, hari ubundi buryo bwatanzwe, burimo:

Gutunganya hakoreshejwe amashanyarazi, gukosora hakoreshejwe Catalyst cyangwa gushushanya, na

Gutunganya polishing ya tribochemical.

Ariko, ubu buryo buracyari mu cyiciro cy’ubushakashatsi kandi bwagiye butera imbere buhoro buhoro bitewe n’imiterere y’ibikoresho bya SiC igoye.

Amaherezo, gutunganya SiC ni inzira igenda igabanya ubukana n'ubukana kugira ngo hongerwe ubwiza bw'ubuso, aho ubugari n'ubugari ari ingenzi muri buri cyiciro.

Ikoranabuhanga ryo Gutunganya

Mu gihe cyo gusya wafer, diyama ifite ubunini butandukanye ikoreshwa mu gusya wafer kugeza ku bugari bukenewe no ku buryo ubuso bwayo butoshye. Ibi bikurikirwa no gusya, hakoreshejwe uburyo bwa mechanical na chemical mechanical polishing (CMP) kugira ngo hakorwe wafer za silicon carbide (SiC) zikozwe neza zidafite umwanda.

Nyuma yo gusigwa, SiC wafers zigenzurwa neza hifashishijwe ibikoresho nka mikorosikopi y’ijisho na diffractometer za X-ray kugira ngo harebwe ko ibipimo byose bya tekiniki byujuje ibisabwa. Amaherezo, wafers zisizwe zisukurwa hifashishijwe ibikoresho byihariye byo gusukura n’amazi meza cyane kugira ngo zikurweho imyanda yo hejuru. Hanyuma zirumishwa hakoreshejwe imyuka ya azote nziza cyane hamwe n’imyumisha yumisha, bikarangira igikorwa cyose cyo kuzikora.

Nyuma y'imyaka myinshi y'imbaraga, habayeho iterambere rikomeye mu gutunganya kristu imwe ya SiC mu Bushinwa. Mu gihugu imbere, kristu imwe ya 4H-SiC ifite ubushobozi bwo gukingira ibidukikije ya 100 mm yakozwe neza, kandi kristu imwe ya 4H-SiC na 6H-SiC yo mu bwoko bwa n ubu ishobora gukorwa mu byiciro. Ibigo nka TankeBlue na TYST byamaze gukora kristu imwe ya 150 mm SiC.

Ku bijyanye n'ikoranabuhanga ryo gutunganya wafer ya SiC, ibigo byo mu gihugu byabanje gusuzuma imiterere y'imikorere n'inzira zo gukata, gusya no gusiga irangi rya kristu. Bishobora gukora ingero zujuje ibisabwa mu gukora ibikoresho. Ariko, ugereranije n'amahame mpuzamahanga, ubwiza bw'ubuso bw'wafer yo mu rugo buracyari inyuma cyane. Hari ibibazo byinshi:

Inyigisho mpuzamahanga za SiC n'ikoranabuhanga ryo kuzitunganya birinzwe cyane kandi ntibiroroshye kuzibona.

Hari ibura ry'ubushakashatsi bw'imitekerereze n'ubufasha mu kunoza no kunoza imikorere.

Igiciro cyo gutumiza ibikoresho n'ibice by'ibicuruzwa byo mu mahanga kiri hejuru.

Ubushakashatsi bw’imbere mu gihugu ku bijyanye n’igishushanyo mbonera cy’ibikoresho, uburyo bitunganywa neza, n’ibikoresho buracyagaragaza icyuho kinini ugereranyije n’urwego mpuzamahanga.

Muri iki gihe, ibikoresho byinshi bikoreshwa mu Bushinwa bifite ubuhanga buhanitse bitumizwa mu mahanga. Ibikoresho byo gupima n'uburyo bwo kubipima nabyo birakeneye kunozwa kurushaho.

Bitewe n’iterambere rikomeje ry’ibikoresho bya semiconductor byo mu gisekuru cya gatatu, uburebure bw’ibice bya SiC single crystal substrates buriyongera buhoro buhoro, hamwe n’ibisabwa byinshi kugira ngo habeho ireme ry’ubuso. Ikoranabuhanga ryo gutunganya wafer ryabaye imwe mu ntambwe zigoye cyane mu buhanga nyuma yo gukura kwa SiC single crystal.

Kugira ngo hakemurwe ibibazo biriho mu gutunganya, ni ngombwa gukomeza kwiga uburyo bwo gukata, gusya no gusiga irangi, no gushakisha uburyo bukwiye bwo gutunganya no gukoresha SiC wafer. Muri icyo gihe, ni ngombwa kwiga ikoranabuhanga mpuzamahanga rigezweho ryo gutunganya no gukoresha uburyo bugezweho bwo gutunganya no gukoresha ibikoresho bigezweho kugira ngo hakorwe substrates nziza.

Uko ingano ya wafer yiyongera, ingorane zo gukura no gutunganya kristu nazo ziyongera. Ariko, ubushobozi bwo gukora ibikoresho biri inyuma burazamuka cyane, kandi ikiguzi cya buri kimwe kiragabanuka. Kuri ubu, abacuruza wafer bakomeye ba SiC ku isi batanga ibicuruzwa biri hagati ya santimetero 1.8 na santimetero 1.8. Ibigo bikomeye nka Cree na II-VI byatangiye gutegura iterambere ry'imirongo ikora wafer ya SiC ya santimetero 1.8.