4 inch SiC Wafers 6H Semi-Insulating SiC Substrates prime, ubushakashatsi, na dummy
Kugaragaza ibicuruzwa
| Icyiciro | Impamyabumenyi ya Zeru MPD (Z Grade) | Icyiciro cy'umusaruro usanzwe (P Grade) | Icyiciro cya Dummy (D Grade) | ||||||||
| Diameter | 99,5 mm ~ 100.0 mm | ||||||||||
| 4H-SI | 500 μ m ± 20 mm | 500 μm ± 25 mm | |||||||||
| Icyerekezo cya Wafer |
Off axis: 4.0 ° yerekeza kuri <1120> ± 0.5 ° kuri 4H-N, Ku murongo: <0001> ± 0.5 ° kuri 4H-SI | ||||||||||
| 4H-SI | ≤1cm-2 | Cm5 cm-2 | Cm15 cm-2 | ||||||||
| 4H-SI | ≥1E9 Ω · cm | ≥1E5 Ω · cm | |||||||||
| Icyerekezo Cyibanze | {10-10} ± 5.0 ° | ||||||||||
| Uburebure bwibanze | 32,5 mm ± 2,2 mm | ||||||||||
| Uburebure bwa kabiri | 18.0 mm ± 2,2 mm | ||||||||||
| Icyerekezo cya kabiri cya Flat | Silicon ireba hejuru: 90 ° CW. kuva kuri Prime igororotse ± 5.0 ° | ||||||||||
| Guhezwa | Mm 3 | ||||||||||
| LTV / TTV / Umuheto / Intambara | ≤3 μ m / ≤5 μ m / ≤15 μ m / ≤30 mm | ≤10 μ m / ≤15 μ m / ≤25 μ m / ≤40 mm | |||||||||
| Ubugome | C mu maso | Igipolonye | Ra≤1 nm | ||||||||
| Si face | CMP | Ra≤0.2 nm | Ra≤0.5 nm | ||||||||
| Impande Zimenetse Kumucyo mwinshi | Nta na kimwe | Uburebure bwa mm 10 mm, ingaragu uburebure bwa mm2 | |||||||||
| Isahani ya Hex Kumucyo mwinshi | Agace kegeranye ≤0.05% | Agace kegeranye ≤0.1% | |||||||||
| Uturere twa Polytype Kumucyo mwinshi | Nta na kimwe | Agace kegeranye ≤3% | |||||||||
| Amashusho ya Carbone | Agace kegeranye ≤0.05% | Agace kegeranye ≤3% | |||||||||
| Igishushanyo cya Silicon Igishushanyo Cyinshi Cyumucyo | Nta na kimwe | Uburebure bwuzuye ≤1 * wafer diameter | |||||||||
| Imipira yo ku mpande hejuru yumucyo mwinshi | Nta numwe wemereye ≥0.2 mm z'ubugari n'uburebure | 5 byemewe, mm1 mm imwe imwe | |||||||||
| Ubuso bwa Silicon Yanduye Kubwinshi | Nta na kimwe | ||||||||||
| Gupakira | Cassette ya Multi-wafer Cyangwa Igikoresho kimwe cya Wafer | ||||||||||
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