12 Inch SiC substrate Diameter 300mm Ubunini 750μm 4H-N Ubwoko burashobora gutegurwa

Ibisobanuro bigufi:

Mugihe gikomeye mugihe inganda za semiconductor zigenda zihinduka mugisubizo cyiza kandi cyoroshye, kuvuka kwa substrate ya SiC ya santimetero 12 (12-silicon carbide substrate) byahinduye imiterere. Ugereranije na gakondo ya santimetero 6 na santimetero 8, ubunini bunini bwa substrate ya santimetero 12 byongera umubare wa chip ikorerwa kuri wafer inshuro zirenga enye. Byongeye kandi, igiciro cyibice bya santimetero 12 za SiC substrate yagabanutseho 35-40% ugereranije nubusanzwe busanzwe bwa santimetero 8, ibyo bikaba ari ngombwa kugirango habeho ibicuruzwa byanyuma.
Mugukoresha tekinoroji yo gutwara ibicuruzwa biva mu kirere, twageze ku nganda ziyobora inganda kugenzura ubwinshi bwa dislokasiyo muri kristu ya santimetero 12, dutanga umusingi udasanzwe wo gukora ibikoresho bizakurikiraho. Iri terambere rirakomeye cyane mugihe isi ibuze chip.

Ibikoresho byingenzi byingufu zikoreshwa mubikorwa bya buri munsi-nka EV yihuta-yumuriro na sitasiyo ya 5G-bigenda byiyongera muburyo bunini bwa substrate. Cyane cyane mubushyuhe bwo hejuru, voltage nyinshi, nibindi bidukikije bikora, substrate ya santimetero 12 ya SiC yerekana ituze rirenze ugereranije nibikoresho bishingiye kuri silikoni.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Ibipimo bya tekiniki

12 inch Silicon Carbide (SiC) Substrate Ibisobanuro
Icyiciro		Umusaruro wa ZeroMPD Icyiciro (Z Icyiciro)	Umusaruro usanzwe Icyiciro (P Grade)		Dummy Grade (D Urwego)
Diameter		3 0 0 mm ~ 1305mm
Umubyimba	4H-N	750μm ± 15 mm	750μm ± 25 mm
	4H-SI	750μm ± 15 mm	750μm ± 25 mm
Icyerekezo cya Wafer		Off axis: 4.0 ° yerekeza kuri <1120> ± 0.5 ° kuri 4H-N, Ku murongo: <0001> ± 0.5 ° kuri 4H-SI
Ubucucike bwa Micropipe	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Kurwanya	4H-N	0.015 ~ 0.024 Ω · cm			0.015 ~ 0.028 Ω · cm
	4H-SI	≥1E10 Ω · cm			≥1E5 Ω · cm
Icyerekezo Cyibanze		{10-10} ± 5.0 °
Uburebure bwibanze	4H-N	N / A.
	4H-SI	Ikimenyetso
Guhezwa		Mm 3
LTV / TTV / Umuheto / Intambara		≤5μm / ≤15μm / ≤35 μ m / ≤55 mm			≤5μm / ≤15μm / ≤35 □ μm / ≤55 □ μm
Ubugome		Igipolonye Ra≤1 nm
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Impande Zimenetse Kumucyo mwinshi Isahani ya Hex Kumucyo mwinshi Uturere twa Polytype Kumucyo mwinshi Amashusho ya Carbone Igishushanyo cya Silicon Igishushanyo Cyinshi Cyumucyo		Nta na kimwe Agace kegeranye ≤0.05% Nta na kimwe Agace kegeranye ≤0.05% Nta na kimwe			Uburebure bwa mm 20 mm, uburebure bumwe mm2 mm Agace kegeranye ≤0.1% Agace kegeranye ≤3% Agace kegeranye ≤3% Uburebure bwuzuye≤1 × wafer diameter
Imipira yimpande yumucyo mwinshi		Ntanumwe wemerewe ≥0.2mm y'ubugari n'uburebure			7 byemewe, mm1 mm imwe imwe
(TSD) Gutandukanya imigozi		≤500 cm-2		N / A.
(BPD) Gusiba indege shingiro		Cm1000 cm-2		N / A.
Ubuso bwa Silicon Yanduye Kumucyo mwinshi		Nta na kimwe
Gupakira		Cassette ya Multi-wafer Cyangwa Igikoresho kimwe cya Wafer
Inyandiko:
1 Inenge ntarengwa ikoreshwa kuri wafer yose usibye agace kegeranye. 2Ibishushanyo bigomba kugenzurwa kuri Si gusa. 3 Amakuru ya dislocation aturuka gusa kuri KOH etched wafers.

Ibintu by'ingenzi

1.Ubushobozi bw'umusaruro hamwe ninyungu zibiciro: Umusaruro mwinshi wa santimetero 12 za SiC substrate (12-silicon carbide substrate) yerekana ibihe bishya mubikorwa bya semiconductor. Umubare wa chipi ushobora kuboneka muri wafer imwe ugera inshuro 2,25 zingana na 8-santimetero 8, bigasimbuka neza umusaruro. Ibitekerezo byabakiriya byerekana ko gukoresha insimburangingo ya santimetero 12 byagabanije ingufu za module yingufu za 28%, bigatuma habaho inyungu zikomeye zo guhatanira isoko ku isoko rikomeye.
2.Gusobanukirwa Ibyiza bifatika: Substrate ya santimetero 12 ya SiC iragwa ibyiza byose byibikoresho bya karibide ya silicon - itwara ubushyuhe bwayo ikubye inshuro 3 iya silikoni, mugihe imbaraga zayo zo kumeneka zigera ku nshuro 10 za silikoni. Ibi biranga bifasha ibikoresho bishingiye kubutaka bwa santimetero 12 gukora neza mubushyuhe bwo hejuru burenga 200 ° C, bigatuma bikenerwa cyane cyane kubisabwa nkibinyabiziga byamashanyarazi.
3.Ikoranabuhanga ryo Gutunganya Ubutaka: Twateje imbere uburyo bushya bwo gutunganya imashini (CMP) uburyo bwihariye bwa santimetero 12 za SiC, tugera ku butumburuke bwa atome (Ra <0.15nm). Iyi ntambwe ikemura ikibazo cyisi yose yo kuvura diameter nini ya silicon karbide wafer yo kuvura hejuru, ikuraho inzitizi zo gukura kwiza kwa epitaxial.
4.Ibikorwa byo gucunga neza ubushyuhe: Mubikorwa bifatika, ibice 12 bya santimetero SiC byerekana ubushobozi budasanzwe bwo gukwirakwiza ubushyuhe. Ikizamini cyerekana ko munsi yubucucike bumwe, ibikoresho bifashisha insimburangingo ya santimetero 12 bikora ku bushyuhe bwa 40-50 ° C munsi y’ibikoresho bishingiye kuri silikoni, byongerera igihe ubuzima serivisi ibikoresho.

Porogaramu nyamukuru

1.Ibinyabuzima bishya by’ingufu z’ibinyabuzima: Substrate ya 12 ya SiC (12-silicon carbide substrate) ihindura imyubakire yimashanyarazi ya powertrain. Kuva kuri charger ya bombo (OBC) kugeza kuri disikuru nkuru ya sisitemu na sisitemu yo gucunga bateri, kunoza imikorere yazanwe na substrate ya santimetero 12 byongera ibinyabiziga 5-8%. Raporo ziva mu ruganda rukora amamodoka zerekana ko gukoresha insimburangingo ya santimetero 12 byagabanije gutakaza ingufu muri sisitemu yo kwishyuza byihuse ku kigero cya 62%.
2.Urwego rushobora kongera ingufu: Muri sitasiyo y’amashanyarazi, inverter zishingiye kuri santimetero 12 za SiC ntizigaragaza gusa ibintu bito bito ahubwo binagera ku bikorwa byo guhindura birenze 99%. By'umwihariko mu gukwirakwiza ibisekuruza byagenwe, ubu buryo buhanitse busobanura kuzigama buri mwaka amafaranga ibihumbi magana yuan mu gutakaza amashanyarazi kubakoresha.
3.Ibikorwa byikora: Guhindura inshuro zikoresha insimburangingo ya santimetero 12 byerekana imikorere myiza muri robo yinganda, ibikoresho bya mashini ya CNC, nibindi bikoresho. Ibiranga imirongo myinshi yo guhinduranya byongera umuvuduko wa moteri kuri 30% mugihe bigabanya ingufu za electronique kuri kimwe cya gatatu cyibisubizo bisanzwe.
4.Umukiriya wa Electronics Innovation: Ibisekuru bizakurikiraho bya tekinoroji ya terefone yihuta byatangiye gukoresha insimburangingo ya SiC-12. Biteganijwe ko ibicuruzwa byishyurwa byihuse hejuru ya 65W bizahinduka rwose mubisubizo bya silicon karbide ibisubizo, hamwe na santimetero 12 za substrate zigaragara nkuburyo bwiza bwo guhitamo ibiciro.

XKH Serivisi yihariye ya santimetero 12 za SiC Substrate

Kugirango wuzuze ibisabwa byihariye bya santimetero 12 za SiC (12-silicon karbide substrate), XKH itanga serivisi zuzuye:
1.Kwitwara neza:
Dutanga insimburangingo ya santimetero 12 muburyo butandukanye bwimbitse harimo 725 mm kugirango duhuze ibyifuzo bitandukanye.
2.Kwibanda cyane ：
Inganda zacu zishyigikira ubwoko bwinshi bwimikorere harimo n-ubwoko bwa p na p-substrate, hamwe no kugenzura neza birwanya intera iri hagati ya 0.01-0.02Ω · cm.
3.Ibizamini byo gupima:
Hamwe nibikoresho byuzuye byo gupima urwego, dutanga raporo yuzuye yo kugenzura.
XKH yumva ko buri mukiriya afite ibisabwa byihariye kuri santimetero 12 za SiC. Turatanga rero uburyo bworoshye bwubufatanye bwubucuruzi kugirango dutange ibisubizo birushanwe, haba kuri:
Ingero za R&D
Kugura ibicuruzwa byinshi
Serivise zacu zemeza ko dushobora kuzuza ibyifuzo byawe bya tekiniki n’umusaruro ukenewe kuri santimetero 12 za SiC.