12 inch SiC Substrate N Ubwoko bunini Ingano Yisumbuyeho RF Porogaramu

12 cm SiC Substrate N Ubwoko bunini Ingano Yisumbuyeho Imikorere ya RF Porogaramu Yerekanwe

Ibisobanuro bigufi:

Ububiko bwa santimetero 12 za SiC bugaragaza iterambere ryibanze mu buhanga bwibikoresho bya semiconductor, bitanga inyungu zihindura amashanyarazi na electronique zikoreshwa cyane. Nka nganda nini nini cyane yubucuruzi iboneka muri silicon karbide ya wafer, insimburangingo ya santimetero 12 ya SiC ituma ubukungu butigeze bubaho mugihe hagumijwe inyungu yibintu biranga umurongo mugari hamwe nubushyuhe budasanzwe. Ugereranije na wafers isanzwe ya santimetero 6 cyangwa ntoya, urubuga rwa santimetero 12 rutanga ahantu harenga 300% byakoreshwa kuri wafer, byongera cyane umusaruro wimpfu kandi bikagabanya amafaranga yo gukora kubikoresho byamashanyarazi. Ingano yinzibacyuho yerekana ubwihindurize bwamateka ya silicon wafers, aho buri diameter yiyongera yazanye igabanuka ryibiciro no kunoza imikorere. Ubuso bwa santimetero 12 za SiC substrate yo hejuru yubushyuhe bwumuriro (hafi 3 × ya silikoni) hamwe nimbaraga zikomeye zo kumeneka kumurima bituma igira agaciro cyane cyane mumashanyarazi azakurikiraho 800V yimodoka zikoresha amashanyarazi, aho zitanga amashanyarazi menshi kandi meza. Mubikorwa remezo 5G, umuvuduko mwinshi wibikoresho bya elegitoronike yemerera ibikoresho bya RF gukora kumurongo mwinshi hamwe nigihombo gito. Ihuriro rya substrate hamwe nibikoresho byahinduwe bya silicon byahinduwe kandi byorohereza kwakirwa neza na fabs zisanzwe, nubwo hakenewe ubuhanga bwihariye kubera ubukana bwa SiC (9.5 Mohs). Mugihe umusaruro wiyongera, insimburangingo ya santimetero 12 ya SiC biteganijwe ko izahinduka inganda zinganda zikoreshwa cyane, bigatera udushya mu binyabiziga, ingufu zishobora kongera ingufu, hamwe na sisitemu yo guhindura amashanyarazi.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Ibipimo bya tekiniki

12 inch Silicon Carbide (SiC) Substrate Ibisobanuro
Icyiciro		Umusaruro wa ZeroMPD Icyiciro (Z Icyiciro)	Umusaruro usanzwe Icyiciro (P Grade)		Dummy Grade (D Urwego)
Diameter		3 0 0 mm ~ 1305mm
Umubyimba	4H-N	750μm ± 15 mm	750μm ± 25 mm
	4H-SI	750μm ± 15 mm	750μm ± 25 mm
Icyerekezo cya Wafer		Off axis: 4.0 ° yerekeza kuri <1120> ± 0.5 ° kuri 4H-N, Ku murongo: <0001> ± 0.5 ° kuri 4H-SI
Ubucucike bwa Micropipe	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Kurwanya	4H-N	0.015 ~ 0.024 Ω · cm			0.015 ~ 0.028 Ω · cm
	4H-SI	≥1E10 Ω · cm			≥1E5 Ω · cm
Icyerekezo Cyibanze		{10-10} ± 5.0 °
Uburebure bwibanze	4H-N	N / A.
	4H-SI	Ikimenyetso
Guhezwa		Mm 3
LTV / TTV / Umuheto / Intambara		≤5μm / ≤15μm / ≤35 μ m / ≤55 mm			≤5μm / ≤15μm / ≤35 □ μm / ≤55 □ μm
Ubugome		Igipolonye Ra≤1 nm
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Impande Zimenetse Kumucyo mwinshi Isahani ya Hex Kumucyo mwinshi Uturere twa Polytype Kumucyo mwinshi Amashusho ya Carbone Igishushanyo cya Silicon Igishushanyo Cyinshi Cyumucyo		Nta na kimwe Agace kegeranye ≤0.05% Nta na kimwe Agace kegeranye ≤0.05% Nta na kimwe			Uburebure bwa mm 20 mm, uburebure bumwe mm2 mm Agace kegeranye ≤0.1% Agace kegeranye ≤3% Agace kegeranye ≤3% Uburebure bwuzuye≤1 × wafer diameter
Imipira yimpande yumucyo mwinshi		Ntanumwe wemerewe ≥0.2mm y'ubugari n'uburebure			7 byemewe, mm1 mm imwe imwe
(TSD) Gutandukanya imigozi		≤500 cm-2		N / A.
(BPD) Gusiba indege shingiro		Cm1000 cm-2		N / A.
Ubuso bwa Silicon Yanduye Kumucyo mwinshi		Nta na kimwe
Gupakira		Cassette ya Multi-wafer Cyangwa Igikoresho kimwe cya Wafer
Inyandiko:
1 Inenge ntarengwa ikoreshwa kuri wafer yose usibye agace kegeranye. 2Ibishushanyo bigomba kugenzurwa kuri Si gusa. 3 Amakuru ya dislocation aturuka gusa kuri KOH etched wafers.

Ibintu by'ingenzi

1. Ingano nini Ibyiza: Substrate ya SiC-12 ya santimetero 12 (silicon carbide substrate ya santimetero 12) itanga ahantu hanini-wafer, ituma chip nyinshi zibyara umusaruro kuri wafer, bityo bikagabanya ibiciro byinganda no kongera umusaruro.
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Porogaramu nyamukuru

2. 5G Sitasiyo Yibanze: Ibinini binini bya SiC bifasha ibikoresho bya RF byihuta cyane, byujuje ibyifuzo bya 5G base base kugirango ingufu nyinshi nigihombo gito.

3.Ibikoresho bitanga amashanyarazi: Muri inverteri yizuba hamwe na gride yubwenge, substrate ya santimetero 12 irashobora kwihanganira ingufu nyinshi mugihe hagabanijwe gutakaza ingufu.

4.Umukoresha wa elegitoroniki: Amashanyarazi yihuta hamwe nibikoresho bitanga amashanyarazi arashobora gukoresha insimburangingo ya santimetero 12 za SiC kugirango igere ku bunini kandi bunoze.

Serivisi za XKH

Dufite umwihariko muri serivisi zitunganijwe kuri sisitemu ya santimetero 12 za SiC (12-silicon karbide substrate), harimo:
1. Gushushanya & Polishingi: Kwangirika kwinshi, gutunganya-hejuru-gutunganya substrate gutunganya bikwiranye nibisabwa nabakiriya, byemeza imikorere yibikoresho bihamye.
2. Inkunga yo Kwiyongera kwa Epitaxial: Serivise nziza ya epitaxial wafer kugirango yihutishe gukora chip.
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Haba kubyaza umusaruro rusange cyangwa kubyihariye, serivise zacu za santimetero 12 za SiC substrate ihuza umushinga wawe ukeneye, bigaha imbaraga iterambere ryikoranabuhanga.