Uduce duto twa SiC twa santimetero 2, uduce duto twa SiC twa santimetero 6 cyangwa 4, dupima metero 50.8

Uduce duto twa SiC twa santimetero 2, uduce duto twa SiC twa santimetero 6 cyangwa 4, duto twa diameter 50.8mm. Ishusho yagaragaye

Ibisobanuro bigufi:

Karubide ya Silicon (SiC) ni imvange y’ibinyabubiri y’itsinda rya IV-IV, ni yo mvange yonyine ikomeye ihamye mu itsinda rya IV ry’Imbonerahamwe y’Ibintu, ni semiconductor y’ingenzi. SiC ifite imiterere myiza y’ubushyuhe, mekanike, ibinyabutabire n’amashanyarazi, bituma iba imwe mu bikoresho byiza cyane byo gukora ibikoresho by’ikoranabuhanga bikoresha ubushyuhe bwinshi, inshuro nyinshi, kandi bifite imbaraga nyinshi.

Ohereza imeri kuri twe

Ibiranga

Gukoresha substrate ya silicon carbide

Substrate ya silicon carbide ishobora kugabanywamo ubwoko bw'amashanyarazi n'ubwoko bw'amashanyarazi akingira bitewe n'uburyo bwo kugabanya ubushyuhe. Ibikoresho bya silicon carbide bikoresha amashanyarazi ahanini bikoreshwa mu modoka zikoresha amashanyarazi, amashanyarazi aturuka kuri photovoltaic, inzira za gari ya moshi, ububiko bw'amakuru, gusharija n'ibindi bikorwa remezo. Inganda zikora ibinyabiziga zikoresha amashanyarazi zikeneye cyane substrate za silicon carbide zikoresha amashanyarazi, kandi kuri ubu, Tesla, BYD, NIO, Xiaopeng n'izindi sosiyete zikora ibinyabiziga bishya bikoresha ingufu za silicon carbide zateganyije gukoresha ibikoresho cyangwa modules za silicon carbide.

Ibikoresho bya silikoni bifite ubushyuhe buciriritse bikoreshwa cyane cyane mu itumanaho rya 5G, itumanaho ry'ibinyabiziga, ibikorwa byo kurinda igihugu, kohereza amakuru, indege n'ibindi. Mu gukura urwego rwa epitaxial rwa gallium nitride kuri substrate ya silikoni ifite ubushyuhe buciriritse, wafer ya epitaxial ya gallium nitride ishingiye kuri silikoni ishobora gukorwamo ibikoresho bya RF bya mikoroonde, bikoreshwa cyane cyane mu ishami rya RF, nka amplifiers z'amashanyarazi mu itumanaho rya 5G n'ibikoresho bipima amajwi mu bwirinzi bw'igihugu.

Gukora ibikoresho bya silicon carbide substrate bikubiyemo guteza imbere ibikoresho, guhuza ibikoresho fatizo, gukura kwa kristu, gukata kristu, gutunganya wafer, gusukura no kugerageza, n'ibindi byinshi bifitanye isano. Ku bijyanye n'ibikoresho fatizo, inganda za Songshan Boron zitanga ibikoresho fatizo bya silicon carbide ku isoko, kandi zageze ku bucuruzi buto. Ibikoresho bya semiconductor byo mu gisekuru cya gatatu bihagarariwe na silicon carbide bigira uruhare runini mu nganda za none, hamwe no kwihutisha kwinjira kw'imodoka nshya zikoresha ingufu n'ikoreshwa rya photovoltaic, gukenera silicon carbide substrate bigiye gutuma habaho influence.