2 cm ya SiC Wafers 6H cyangwa 4H Semi-izingira SiC Substrates Dia50.8mm

2 cm ya SiC Wafers 6H cyangwa 4H Semi-Insulation SiC Substrates Dia50.8mm Ishusho Yerekanwe

Ibisobanuro bigufi:

Carbide ya Silicon (SiC) ni binini igizwe nitsinda rya IV-IV, nicyo kintu cyonyine gihamye gihamye mu itsinda rya IV ryigihe cyibihe, Nibice byingenzi byingenzi. SiC ifite ibikoresho byiza cyane byubushyuhe, ubukanishi, imiti n’amashanyarazi, bigatuma iba kimwe mubikoresho byiza byo gukora ubushyuhe bwinshi, inshuro nyinshi, hamwe nibikoresho bya elegitoroniki bifite ingufu nyinshi.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Gukoresha silicon karbide substrate

Silicon karbide substrate irashobora kugabanywa muburyo bwo kuyobora hamwe nubwoko bwa insuline ukurikije ubukana. Ibikoresho bya karubide ya silicon ikoreshwa cyane cyane mumashanyarazi, kubyara amashanyarazi, amashanyarazi, gari ya moshi, ibigo byamakuru, kwishyuza nibindi bikorwa remezo. Inganda zikoresha amashanyarazi zikeneye cyane insimburangingo ya silikoni ya karubide, kandi kuri ubu, Tesla, BYD, NIO, Xiaopeng n’andi masosiyete mashya y’ingufu z’ingufu zateguye gukoresha ibikoresho bya silikoni karbide cyangwa modules.

Ibikoresho bya karibide ya silikoni ikoreshwa cyane cyane mu itumanaho rya 5G, itumanaho ry’imodoka, porogaramu zo kurinda igihugu, kohereza amakuru, icyogajuru n’izindi nzego. Mugukuza gallium nitride epitaxial layer kuri sisitemu ya karubide ya silicon igice cya insuline, wafer ya silicon ishingiye kuri gallium nitride epitaxial wafer irashobora gukomeza gukorwa mubikoresho bya microwave RF, bikoreshwa cyane mumurima wa RF, nkibikoresho byongera ingufu mumatumanaho ya 5G na ibyuma bya radiyo mukurengera igihugu.

Gukora ibicuruzwa bya silicon karbide substrate bikubiyemo iterambere ryibikoresho, synthesis yibikoresho fatizo, gukura kwa kirisiti, gukata kristu, gutunganya wafer, gusukura no kugerageza, nandi masano menshi. Ku bijyanye n’ibikoresho fatizo, Inganda za Songshan Boron zitanga silicon karbide ibikoresho fatizo ku isoko, kandi imaze kugurisha ibicuruzwa bito. Igisekuru cya gatatu ibikoresho bya semiconductor bigereranywa na karubide ya silicon bigira uruhare runini munganda zigezweho, hamwe no kwihuta kwinjirira mu binyabiziga bishya byingufu no gukoresha amashanyarazi, icyifuzo cya silicon karbide substrate kiri hafi gutangira.