Ingano ya Silicon Carbide ya 2Inch 6H-N Sic Wafer ifite Double Polished Conductive Prime Grade Mos Grade

Ishusho ya 2Inch 6H-N Silicon Carbide Substrate Sic Wafer Double Polished Conductive Prime Grade Mos Grade Ishusho yagaragaye

Ibisobanuro bigufi:

Substrate ya 6H n-type Silicon Carbide (SiC) single-crystal ni igikoresho cy'ingenzi cya semiconductor gikoreshwa cyane mu gukoresha ikoranabuhanga rikoresha ingufu nyinshi, frequency nyinshi, n'ubushyuhe bwinshi. 6H-N SiC izwiho imiterere yayo ya kristale ya hexagonal, itanga icyuho kinini n'ubushyuhe bwinshi, bigatuma iba nziza cyane mu bidukikije bisaba imbaraga nyinshi.
Kuba iyi mashini ikoresha amashanyarazi menshi ndetse n'uburyo igenda ikoresha electron bituma habaho ibikoresho by'amashanyarazi bikoresha ingufu nyinshi, nka MOSFET na IGBT, bishobora gukora ku muvuduko mwinshi w'amashanyarazi n'ubushyuhe kurusha ibyakozwe muri silikoni isanzwe. Uburyo bwayo bwiza bwo gutwara ubushyuhe butuma ubushyuhe bukwirakwira neza, bikaba ari ingenzi cyane mu kubungabunga imikorere no kwizerwa mu gukoresha ingufu nyinshi.
Mu mikoreshereze ya radiyo (RF), imiterere ya 6H-N SiC ishyigikira ikorwa ry'ibikoresho bishobora gukora ku murongo wo hejuru kandi binoze imikorere. Gukomera kwayo mu bya shimi no kudahangana n'imirasire nabyo bituma ikoreshwa mu bidukikije bikomeye, harimo n'ibijyanye n'indege n'ubwirinzi.
Byongeye kandi, substrates za 6H-N SiC ni ingenzi ku bikoresho bya optoelectronic, nka ultraviolet photodetectors, aho icyuho cyazo kinini gituma habaho uburyo bwo kubona urumuri rwa UV neza. Uruvange rw'izi miterere rutuma 6H n-type SiC iba ibikoresho bifite uburyo bwinshi kandi by'ingenzi mu guteza imbere ikoranabuhanga rigezweho rya elegitoroniki na optoelectronic.

Ohereza imeri kuri twe

Ibiranga

Ibi bikurikira ni ibiranga wafer ya silicon carbide:

· Izina ry'igicuruzwa: SiC Substrate
· Imiterere ya Hexagonal: Imiterere yihariye y'ikoranabuhanga.
· Ubushobozi bwo kugenda bwa Electron nyinshi: ~600 cm²/V·s.
· Gukomera mu bya shimi: Birwanya ingese.
· Ubudahangarwa n'imirasire: Ikwiriye ahantu hakomereye.
· Ubwinshi buke bw'ibinyabiziga: Bikora neza mu bushyuhe bwinshi.
· Kuramba: Imiterere ikomeye ya mekanike.
· Ubushobozi bwa Optoelectronic: Gutahura neza urumuri rwa UV.

Wafer ya silicon carbide ifite akamaro kanini

Porogaramu za SiC wafer:
Substrates za SiC (Silicon Carbide) zikoreshwa mu bikorwa bitandukanye bifite imikorere myiza bitewe n'imiterere yazo yihariye nko gutwara ubushyuhe bwinshi, imbaraga nyinshi z'amashanyarazi, n'icyuho kinini. Dore zimwe mu ngamba zikoreshwa:

1. Ingufu z'amashanyarazi:
·MOSFET zifite voltage nyinshi
·IGBTs (Insulated Gate Bipolar Transistors)
·Diode za Schottky
· Inverters z'amashanyarazi

2. Ibikoresho bikoresha inshuro nyinshi:
·Ibyuma bitanga amplifiers bya RF (Radio Frequency)
·Transistors za microwave
·Ibikoresho bikoresha milimetero

3. Ibyuma by'ikoranabuhanga bikoresha ubushyuhe bwinshi:
·Ibikoresho byo gupima no kugenzura ibidukikije bikomeye
·Ikoranabuhanga mu kirere
·Ibyuma by'ikoranabuhanga by'imodoka (urugero, ibikoresho byo kugenzura moteri)

4. Ikoranabuhanga rya Optoelectronics:
·Imashini zipima urumuri rwa Ultraviolet (UV)
·Diode zitanga urumuri (LED)
·Diode za laser

5. Sisitemu z'ingufu zisubira:
·Inverters zikoresha imirasire y'izuba
·Imashini zihindura turbine y'umuyaga
·Imashini zikoresha amashanyarazi zikoresha amashanyarazi

6. Inganda n'Ubwunganizi:
· Sisitemu za radar
·Itumanaho rya satelite
·Ibikoresho bya réakteur ya nyukiliya

Guhindura SiC wafer

Dushobora guhindura ingano ya substrate ya SiC kugira ngo ihuze n'ibyo ukeneye byihariye. Dutanga kandi wafer ya 4H-Semi HPSI SiC ifite ingano ya 10x10mm cyangwa 5x5 mm.
Igiciro gigenwa n'isanduku, kandi ibisobanuro by'ipaki bishobora guhindurwa uko ubyifuza.
Igihe cyo kohereza ni mu byumweru 2-4. Twemera kwishyura binyuze kuri T/T.
Uruganda rwacu rufite ibikoresho bigezweho byo gukora n'itsinda rya tekiniki, rishobora guhindura imiterere itandukanye, ubunini n'imiterere ya wafer ya SiC hakurikijwe ibyo abakiriya bakeneye.