2Inch 6H-N Silicon Carbide Substrate Sic Wafer Yikubye kabiri Amashanyarazi Yambere Icyiciro cya Mos

2Inch 6H-N Silicon Carbide Substrate Sic Wafer Kabiri Yashizwe Kumurongo Wambere Icyiciro cya mbere Icyiciro cya Mos Icyiciro cyihariye

Ibisobanuro bigufi:

Ubwoko bwa 6H n Ubwoko bwa Silicon Carbide (SiC) substrate imwe ya kristaliste ni ibikoresho byingenzi bya semiconductor ikoreshwa cyane mumashanyarazi menshi, inshuro nyinshi, hamwe nubushyuhe bwo hejuru bwa elegitoronike. Azwi cyane kubera imiterere ya kirisiti itandatu, 6H-N SiC itanga umurongo mugari hamwe nubushyuhe bwo hejuru bwumuriro, bigatuma biba byiza kubidukikije.
Ibi bikoresho byangirika byumuriro wamashanyarazi hamwe na elegitoronike igenda ituma iterambere ryibikoresho bya elegitoroniki bikora neza, nka MOSFETs na IGBTs, bishobora gukora kuri voltage nubushyuhe burenze ibyo bikozwe muri silikoni gakondo. Ubushuhe buhebuje bwumuriro butuma ubushyuhe bukwirakwizwa neza, ingenzi mukubungabunga imikorere no kwizerwa mubikorwa byimbaraga nyinshi.
Mubikorwa bya radiofrequency (RF), imitungo ya 6H-N SiC ishyigikira kurema ibikoresho bishobora gukora kumurongo mwinshi hamwe no gukora neza. Imiti ihagaze neza hamwe no kurwanya imirasire nayo ituma ikoreshwa muburyo bubi, harimo icyogajuru n’ingabo zirwanira mu kirere.
Byongeye kandi, 6H-N SiC insimburangingo ni ntangarugero mu bikoresho bya optoelectronic, nka ultraviolet Photodetector, aho umurongo mugari we utuma urumuri rwa UV rumenyekana neza. Guhuza iyi mitungo bituma 6H n-ubwoko bwa SiC ibintu byinshi kandi byingirakamaro mugutezimbere tekinoroji ya elegitoroniki na optoelectronic.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Ibikurikira nibiranga silicon karbide wafer:

· Izina ryibicuruzwa: Substrate ya SiC
· Imiterere ya mpandeshatu: Ibikoresho bya elegitoroniki bidasanzwe.
· Umuvuduko mwinshi wa Electron: ~ 600 cm² / V · s.
· Imiti ihamye: Irwanya ruswa.
· Kurwanya Imirasire: Birakwiriye ibidukikije bikaze.
· Kwishyira hamwe kwimbere yimbere: Bikora neza mubushyuhe bwinshi.
· Kuramba: Imiterere ikomeye yubukanishi.
· Ubushobozi bwa Optoelectronic: Kumenya neza UV.

Silicon karbide wafer ifite porogaramu nyinshi

SiC wafer Porogaramu:
SiC (Silicon Carbide) insimburangingo ikoreshwa muburyo butandukanye bwo gukora cyane bitewe nuburyo bwihariye nkumuriro mwinshi wumuriro mwinshi, ingufu zumuriro mwinshi, hamwe na bande yagutse. Dore bimwe mubisabwa:

1.Ibikoresho bya elegitoroniki:
· MOSFETS nyinshi cyane
· IGBTs (Irembo rya Bipolar Transistors)
Diode ya Schottky
· Imbaraga zihindura

2.Ibikoresho Byinshi-Byinshi:
· Amashanyarazi ya RF (Radio Frequency)
Transistors ya Microwave
Ibikoresho bya milimetero

3.Ibikoresho bya elegitoroniki yo hejuru:
· Sensor hamwe nizunguruka kubidukikije bikaze
Ibyuma bya elegitoroniki
· Ibikoresho bya elegitoroniki (urugero, ibice bigenzura moteri)

4.Optoelectronics:
· Ultraviolet (UV) ifotora
· Diode itanga urumuri (LED)
Diode ya Laser

5.Ingufu zisubirwamo:
Imirasire y'izuba
· Umuyaga uhindura umuyaga
Imbaraga z'amashanyarazi

6.Inganda n’Ingabo:
Sisitemu ya Radar
Itumanaho rya satelite
Ibikoresho bya reaction ya nucleaire

SiC wafer

Turashobora guhitamo ingano ya substrate ya SiC kugirango twuzuze ibisabwa byihariye. Dutanga kandi 4H-Semi HPSI SiC wafer ifite ubunini bwa 10x10mm cyangwa 5x5 mm.
Igiciro kigenwa nurubanza, kandi ibisobanuro birambuye birashobora gutegurwa kubyo ukunda.
Igihe cyo gutanga kiri mu byumweru 2-4. Twemeye kwishyura binyuze muri T / T.
Uruganda rwacu rufite ibikoresho bigezweho byo gukora hamwe nitsinda rya tekiniki, rishobora guhitamo ibintu bitandukanye, ubunini nuburyo bwa waC wafer ukurikije ibyifuzo byabakiriya.