2inch SiC ingot Dia50.8mmx10mmt 4H-N monocrystal

Ibisobanuro bigufi:

Ingoti ya santimetero 2 (silicon carbide) ingot yerekeza kuri silindrike cyangwa ishusho imwe ya kirisiti ya kariside ya silicon ifite diameter cyangwa uburebure bwa santimetero 2. Ibikoresho bya silicon karbide bikoreshwa nkibikoresho byo gutangiza ibikoresho bitandukanye bya semiconductor, nkibikoresho bya elegitoroniki byamashanyarazi nibikoresho bya optoelectronic.

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Ibicuruzwa birambuye

Ibicuruzwa

Ikoranabuhanga rya SiC Crystal

Ibiranga SiC bituma bigora gukura kristu imwe. Ibi biterwa ahanini nuko nta cyiciro cyamazi gifite igipimo cya stoichiometric ya Si: C = 1: 1 kumuvuduko wikirere, kandi ntibishoboka gukura SiC muburyo bwo gukura bukuze, nkuburyo bwo gushushanya butaziguye kandi uburyo bukomeye bwo kugwa, aribwo shingiro ryinganda ziciriritse. Mubyukuri, igisubizo gifite igipimo cya stoichiometric ya Si: C = 1: 1 gishobora kuboneka gusa mugihe umuvuduko urenze 10E5atm kandi ubushyuhe buri hejuru ya 3200 ℃. Kugeza ubu, uburyo nyamukuru bukubiyemo uburyo bwa PVT, uburyo bwa feri-feri, hamwe nubushyuhe bwo hejuru bwa vapor-fonctionnement ya chimique.

WaC ya SiC na kristu dutanga bikura cyane cyane nubwikorezi bwumwuka wumuyaga (PVT), kandi ibikurikira nintangiriro ngufi kuri PVT:

Uburyo bwo gutwara imyuka yumubiri (PVT) bwaturutse kubuhanga bwa gaz-sublimation tekinike yahimbwe na Lely mu 1955, aho ifu ya SiC ishyirwa mu muyoboro wa grafite hanyuma igashyuha kugeza ku bushyuhe bwo hejuru kugira ngo ifu ya SiC ibora kandi ikaboneka, hanyuma grafite umuyoboro urakonjeshwa, kandi ibice bya gaz-fonctionnement yibice bya poro ya SiC birabikwa kandi bigashyirwa hamwe nka kirisiti ya SiC mukarere kegereye umuyoboro wa grafite. Nubwo ubu buryo butoroshye kubona sisitemu nini nini ya SiC kristu kandi uburyo bwo kubitsa imbere muri tube ya grafite biragoye kubigenzura, butanga ibitekerezo kubashakashatsi bakurikira.

YM Tairov n'abandi. mu Burusiya hatangije igitekerezo cya kirisiti yimbuto hashingiwe kuri iki kibazo, cyakemuye ikibazo cyimiterere ya kirisiti idashobora kugenzurwa nu mwanya wa nucleation ya kirisiti ya SiC. Abashakashatsi bakurikiyeho bakomeje gutera imbere hanyuma amaherezo batezimbere uburyo bwo kohereza imyuka yumubiri (PVT) ikoreshwa munganda muri iki gihe.

Nuburyo bwambere bwo gukura kwa SiC kristal, PVT nuburyo bukura cyane muburyo bwo gukura kuri sisitemu ya SiC. Ugereranije nubundi buryo, ubu buryo bufite ibisabwa bike mubikoresho byo gukura, inzira yoroshye yo gukura, kugenzurwa gukomeye, iterambere ryimbitse nubushakashatsi, kandi bimaze kuba inganda.