3inch Ubuziranenge Bwinshi Semi-Gukingura （HPSI） SiC wafer 350um Dummy urwego rwibanze

Ibisobanuro bigufi:

HPSI (High-Purity Silicon Carbide) SiC wafer, ifite umurambararo wa santimetero 3 n'ubugari bwa 350 µm ± 25 µm, ikozwe mu bikoresho bya elegitoroniki bigezweho. Wafers ya SiC izwiho kuba ifite ibikoresho bidasanzwe, nk'umuvuduko mwinshi w'amashyanyarazi, imbaraga za voltage nyinshi, hamwe no gutakaza ingufu nkeya, bigatuma bahitamo ibikoresho bikoresha amashanyarazi. Iyi wafer yashizweho kugirango ikemure ibintu bikabije, itanga imikorere inoze mugihe kinini-cyinshi, n’umuvuduko mwinshi, hamwe nubushyuhe bwo hejuru, byose mugihe bitanga ingufu nyinshi kandi biramba.

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Ibicuruzwa birambuye

Ibicuruzwa

Gusaba

Wafers ya HPSI SiC ningirakamaro mugushoboza ibisekuruza bizaza imbaraga zikoreshwa, zikoreshwa muburyo butandukanye bukoreshwa cyane:
Sisitemu yo Guhindura Imbaraga: Wafers ya SiC ikora nkibikoresho byingenzi byibikoresho byamashanyarazi nka MOSFETs yingufu, diode, na IGBTs, ningirakamaro muguhindura amashanyarazi neza mumashanyarazi. Ibi bice biboneka mubikoresho bitanga ingufu nyinshi, moteri ya moteri, hamwe na inverteri yinganda.

Ibinyabiziga by'amashanyarazi (EV):Kwiyongera kw'ibinyabiziga by'amashanyarazi bisaba gukoresha ibikoresho bya elegitoroniki bikora neza, kandi wafers ya SiC iri ku isonga ry'iri hinduka. Muri powertrain ya EV, izi wafer zitanga ubushobozi buhanitse hamwe nubushobozi bwo guhinduranya byihuse, bigira uruhare mugihe cyo kwishyuza byihuse, intera ndende, no kuzamura imikorere yimodoka muri rusange.

Ingufu zisubirwamo:Muri sisitemu yingufu zishobora kuvugururwa nkizuba nizuba ryumuyaga, wafers ya SiC ikoreshwa muri inverter na reveri ituma gufata neza no gukwirakwiza ingufu. Umuvuduko mwinshi w'amashanyarazi hamwe na voltage yo hejuru ya SiC yemeza ko sisitemu ikora neza, kabone niyo haba hari ibidukikije bikabije.

Gukora inganda no gukora za robo:Imikorere ya elegitoroniki ikora cyane muri sisitemu yo gutangiza inganda hamwe na robo isaba ibikoresho bishobora guhinduranya vuba, gutwara imitwaro minini, no gukora mukibazo gikomeye. SiC ishingiye kuri semiconductor yujuje ibi bisabwa mugutanga imikorere ihanitse kandi ikomeye, ndetse no mubikorwa bikaze.

Sisitemu y'itumanaho:Mu bikorwa remezo by'itumanaho, aho kwizerwa gukomeye no guhindura ingufu neza ari ngombwa, wafer ya SiC ikoreshwa mubikoresho bitanga amashanyarazi hamwe na DC-DC ihindura. Ibikoresho bya SiC bifasha kugabanya gukoresha ingufu no kuzamura imikorere ya sisitemu mu bigo byamakuru no mu itumanaho.

Mugutanga urufatiro rukomeye rwibikorwa bikoresha ingufu nyinshi, wafer ya HPSI SiC ituma iterambere ryibikoresho bikoresha ingufu, bifasha inganda guhinduka mubisubizo bibisi, birambye.

Ibyiza

operty	Icyiciro cy'umusaruro	Icyiciro cy'ubushakashatsi	Dummy Grade
Diameter	75.0 mm ± 0.5 mm	75.0 mm ± 0.5 mm	75.0 mm ± 0.5 mm
Umubyimba	350 µm ± 25 µm	350 µm ± 25 µm	350 µm ± 25 µm
Icyerekezo cya Wafer	Ku murongo: <0001> ± 0.5 °	Ku murongo: <0001> ± 2.0 °	Ku murongo: <0001> ± 2.0 °
Ubucucike bwa Micropipe kuri 95% ya Wafers (MPD)	Cm 1 cm⁻²	Cm 5 cm⁻²	≤ 15 cm⁻²
Kurwanya amashanyarazi	≥ 1E7 Ω · cm	≥ 1E6 Ω · cm	≥ 1E5 Ω · cm
Dopant	Undoped	Undoped	Undoped
Icyerekezo Cyibanze	{11-20} ± 5.0 °	{11-20} ± 5.0 °	{11-20} ± 5.0 °
Uburebure bwibanze	32,5 mm ± 3.0 mm	32,5 mm ± 3.0 mm	32,5 mm ± 3.0 mm
Uburebure bwa kabiri	18.0 mm ± 2,2 mm	18.0 mm ± 2,2 mm	18.0 mm ± 2,2 mm
Icyerekezo cya kabiri cya Flat	Si hejuru: 90 ° CW kuva kumurongo wambere ± 5.0 °	Si hejuru: 90 ° CW kuva kumurongo wambere ± 5.0 °	Si hejuru: 90 ° CW kuva kumurongo wambere ± 5.0 °
Guhezwa	Mm 3	Mm 3	Mm 3
LTV / TTV / Umuheto / Intambara	3 µm / 10 µm / ± 30 µm / 40 µm	3 µm / 10 µm / ± 30 µm / 40 µm	5 µm / 15 µm / ± 40 µm / 45 µm
Ubuso	C-isura: Ihanaguwe, Si-isura: CMP	C-isura: Ihanaguwe, Si-isura: CMP	C-isura: Ihanaguwe, Si-isura: CMP
Kumeneka (kugenzurwa numucyo mwinshi)	Nta na kimwe	Nta na kimwe	Nta na kimwe
Isahani ya Hex (igenzurwa numucyo mwinshi)	Nta na kimwe	Nta na kimwe	Agace kegeranye 10%
Agace ka polytype (kugenzurwa numucyo mwinshi)	Agace kegeranye 5%	Agace kegeranye 5%	Agace kegeranye 10%
Igishushanyo (kigenzurwa n'umucyo mwinshi)	 5 gushushanya, uburebure bwuzuye ≤ 150 mm	Scr Igishushanyo 10, uburebure bwa mm 200 mm	Scr Igishushanyo 10, uburebure bwa mm 200 mm
Gukata Impande	Nta numwe wemerewe ≥ 0,5 mm z'ubugari n'uburebure	2 byemewe, ≤ 1 mm ubugari n'uburebure	5 byemewe, mm 5 mm z'ubugari n'uburebure
Kwanduza Ubuso (kugenzurwa numucyo mwinshi)	Nta na kimwe	Nta na kimwe	Nta na kimwe

Ibyiza by'ingenzi

Ubushuhe buhebuje: Ubushyuhe bukabije bwa SiC butuma ubushyuhe bukwirakwizwa neza mubikoresho byamashanyarazi, bikabemerera gukora murwego rwo hejuru rwamashanyarazi na frequence nta bushyuhe bukabije. Ibi bisobanurwa kuri sisitemu ntoya, ikora neza hamwe nigihe kirekire cyo gukora.

Umuvuduko mwinshi wa Breakdown: Hamwe na bande yagutse ugereranije na silikoni, wafers ya SiC ishyigikira porogaramu zikoresha ingufu nyinshi, bigatuma iba nziza kubikoresho bya elegitoroniki bikenera guhangana n’umuvuduko ukabije w’amashanyarazi, nko mu binyabiziga by’amashanyarazi, sisitemu y’amashanyarazi, hamwe na sisitemu y’ingufu zishobora kuvugururwa.

Kugabanya ingufu z'amashanyarazi: Umuvuduko muke-wihuta kandi wihuta wibikoresho bya SiC bituma igabanuka ryingufu mugihe gikora. Ibi ntabwo bizamura imikorere gusa ahubwo binongera imbaraga muri rusange kuzigama ingufu za sisitemu zoherejwemo.
Kongera imbaraga mu kwizerwa mu bidukikije bikaze: Ibikoresho bikomeye bya SiC bituma bituma ikora mu bihe bikabije, nk'ubushyuhe bwo hejuru (kugeza kuri 600 ° C), imbaraga nyinshi, hamwe na radiyo nyinshi. Ibi bituma waferi ya SiC ibereye gusaba inganda, ibinyabiziga, ningufu zikoreshwa.

Ingufu zingufu: Ibikoresho bya SiC bitanga ingufu zingana kuruta ibikoresho bishingiye kuri silikoni gakondo, bigabanya ubunini nuburemere bwa sisitemu ya elegitoroniki yamashanyarazi mugihe bizamura imikorere yabo muri rusange. Ibi biganisha ku kuzigama no kugabanya ibidukikije bito mubisabwa nkingufu zishobora kubaho n’imodoka zikoresha amashanyarazi.

Ubunini: Diameter ya santimetero 3 kandi yihanganira gukora neza wafer ya HPSI SiC yemeza ko ari nini cyane ku musaruro rusange, wujuje ubushakashatsi n’ubucuruzi bukenewe.

Umwanzuro

Wafer ya HPSI SiC, ifite diameter ya santimetero 3 na 350 µm ± 25 µm z'ubugari, ni ibikoresho byiza ku gisekuru kizaza cy’ibikoresho bya elegitoroniki bikora cyane. Ihuza ryihariye ryumuriro wumuriro, imbaraga nyinshi zisenyuka, gutakaza ingufu nke, no kwizerwa mubihe bikabije bituma iba ikintu cyingenzi mubikorwa bitandukanye muguhindura amashanyarazi, ingufu zishobora kongera ingufu, ibinyabiziga byamashanyarazi, sisitemu yinganda, hamwe nitumanaho.

Iyi wafer ya SiC irakwiriye cyane cyane mu nganda zishaka kugera ku ntera ishimishije, kuzigama ingufu nyinshi, no kunoza sisitemu. Mugihe ikoranabuhanga rya elegitoroniki rikomeje gutera imbere, wafer ya HPSI SiC itanga umusingi witerambere ryibisekuruza bizaza, ibisubizo bitanga ingufu, bigatuma inzibacyuho igana ahazaza heza, karuboni nkeya.