3inch SiC substrate Umusaruro Dia76.2mm 4H-N

Ibintu nyamukuru biranga santimetero 3 za silicon karbide ya wafers ya wafers nibi bikurikira;

Silicon Carbide (SiC) nigikoresho kinini cya semiconductor, kirangwa nubushyuhe bwo hejuru bwumuriro, umuvuduko mwinshi wa electron, hamwe nimbaraga zikomeye zumuriro. Iyi miterere ituma waC wafers igaragara cyane mumbaraga nyinshi, inshuro nyinshi, hamwe nubushyuhe bwo hejuru. By'umwihariko muri 4H-SiC polytype, imiterere ya kristu itanga imikorere myiza ya elegitoronike, bigatuma iba ibikoresho byo guhitamo ibikoresho bya elegitoroniki.

Wafer ya 3-ya Silicon Carbide 4H-N wafer ni waferi ya azote-yuzuye hamwe na N-itwara neza. Ubu buryo bwa doping butanga wafer murwego rwo hejuru rwa electron, bityo bikazamura imikorere yimikorere. Ingano ya wafer, kuri santimetero 3 (diametero ya 76.2 mm), ni urugero rukunze gukoreshwa mu nganda za semiconductor, zikwiranye nuburyo butandukanye bwo gukora.

Wafer ya santimetero 3 ya Silicon Carbide 4H-N wafer ikorwa hakoreshejwe uburyo bwa Transport Vapor Transport (PVT). Ubu buryo bukubiyemo guhindura ifu ya SiC muri kristu imwe yubushyuhe bwo hejuru, kwemeza ubuziranenge bwa kristu hamwe nuburinganire bwa wafer. Byongeye kandi, umubyimba wa wafer mubusanzwe uri hafi ya mm 0,35, kandi ubuso bwacyo bukorerwa poli-mpande ebyiri kugirango bigere ku rwego rwo hejuru cyane rwo kuringaniza no koroha, ibyo bikaba ari ingenzi kubikorwa byo gukora igice cya kabiri.

Porogaramu ikoreshwa ya santimetero 3 ya Silicon Carbide 4H-N wafer ni nini, harimo ibikoresho bya elegitoroniki bifite ingufu nyinshi, ibyuma byubushyuhe bwo hejuru, ibikoresho bya RF, nibikoresho bya optoelectronic. Imikorere yayo myiza kandi yizewe ituma ibyo bikoresho bikora neza mubihe bikabije, byujuje ibyifuzo byibikoresho bya semiconductor bikora cyane mubikorwa bya elegitoroniki bigezweho.

Turashobora gutanga 4H-N 3inch SiC substrate, ibyiciro bitandukanye bya substrate stock wafers. Turashobora kandi gutunganya ibintu ukurikije ibyo ukeneye. Murakaza neza!