4H-N 4 inch SiC substrate wafer Silicon Carbide Production Dummy Research grade

4H-N 4 santimetero 4 SiC substrate wafer Silicon Carbide Production Dummy Research grade Ishusho yagaragaye

Ibisobanuro bigufi:

Wafer ya silicon carbide imwe ya santimetero 4 ni ibikoresho bikora neza cyane bifite imiterere idasanzwe ya fiziki na shimi. Bikozwe mu bikoresho bya silicon carbide imwe ya kristu ifite ubwiza bwinshi, ifite ubushobozi bwo gutwara ubushyuhe, ihamye mu byuma kandi irwanya ubushyuhe bwinshi. Kubera uburyo bwo kuyitegura neza cyane n'ibikoresho byiza cyane, iyi chip ni imwe mu bikoresho bikunzwe cyane mu gutegura ibikoresho by'ikoranabuhanga bigezweho mu nzego nyinshi.

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Uduce twa silicon carbide imwe ya santimetero 4 dufite uruhare runini mu nzego nyinshi. Ubwa mbere, dukoreshwa cyane mu nganda za semiconductor mu gutegura ibikoresho by'ikoranabuhanga bifite ingufu nyinshi nka transistors z'amashanyarazi, imiyoboro ihuriweho na modules z'amashanyarazi. Uburyo bwo gutwara ubushyuhe bwinshi n'ubushyuhe bwinshi bituma dushobora gusohora ubushyuhe neza no gutanga imikorere myiza no kwizerwa. Icya kabiri, utwo duce twa silicon carbide natwo dukoreshwa mu rwego rw'ubushakashatsi mu gukora ubushakashatsi ku bikoresho bishya n'ibikoresho bishya. Byongeye kandi, utwo duce twa silicon carbide dukoreshwa cyane muri optoelectronics, nko gukora LEDs na laser diodes.

Ibipimo bya wafer ya SiC ya 4inch

Wafer ya silikoni karubide imwe ya santimetero 4 ifite umurambararo wa santimetero 4 (hafi mm 101.6), ifite ubuso bugera kuri Ra < 0.5 nm, ubugari bwa 600 ± 25 μm. Uburyo wafer itwaramo ni ubwoko bwa N cyangwa ubwoko bwa P kandi ishobora guhindurwa hakurikijwe ibyo abakiriya bakeneye. Byongeye kandi, chip ifite ubushobozi bwo kwihanganira imiterere, ishobora kwihanganira igitutu runaka no guhindagura.

Wafer ya inch silicon carbide single crystal substrate ni ibikoresho bikora neza cyane bikoreshwa cyane mu bijyanye na semiconductor, ubushakashatsi n'ikoranabuhanga rya optoelectronics. Ifite ubushobozi bwo gutwara ubushyuhe bwinshi, ihamye mu by'ikoranabuhanga kandi irwanya ubushyuhe bwinshi, ikaba ikwiriye mu gutegura ibikoresho by'ikoranabuhanga bikoresha ingufu nyinshi no gukora ubushakashatsi ku bikoresho bishya. Dutanga uburyo butandukanye bwo kubigena no kubihindura kugira ngo duhuze n'ibyo abakiriya bakeneye. Nyamuneka witondere urubuga rwacu rwigenga kugira ngo umenye byinshi ku bicuruzwa bya wafer za silicon carbide.

Imirimo y'ingenzi: Wafer za silicon carbide, wafer za silicon carbide single crystal substrate, santimetero 4, conductivity y'ubushyuhe, mekanike ihamye, resistance yo hejuru, transistors z'amashanyarazi, circuits zihujwe, modules z'amashanyarazi, LEDs, laser diodes, surface finish, conductivity, custom options