4H-igice HPSI 2inch SiC substrate wafer Umusaruro Dummy Ubushakashatsi

Ibisobanuro bigufi:

2inch silicon karbide imwe ya kristal substrate wafer ni ibikoresho-bikora cyane hamwe nibintu byiza byumubiri nubumara. Ikozwe muri silicon karbide isukuye cyane ibikoresho bya kirisiti hamwe nubushuhe buhebuje, ubushyuhe bwimashini hamwe nubushyuhe bwo hejuru. Turabikesha uburyo bwayo bwo gutegura neza hamwe nibikoresho byujuje ubuziranenge, iyi chip ni kimwe mu bikoresho byatoranijwe mu gutegura ibikoresho bya elegitoroniki bikora cyane mu bice byinshi.

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Ibicuruzwa birambuye

Ibicuruzwa

Semi-insuline silicon karbide substrate ya waC ya SiC

Silicon carbide substrate igabanijwemo cyane cyane muburyo bwo kuyobora no gukingura igice, insimburangingo ya silicon carbide substrate kugeza n-substrate ikoreshwa cyane cyane kuri epitaxial GaN ishingiye kuri LED nibindi bikoresho bya optoelectronic, ibikoresho bya elegitoroniki bishingiye kuri SiC, nibindi, na kimwe cya kabiri. insulente ya SiC silicon karbide substrate ikoreshwa cyane cyane mugukora epitaxial yo gukora ibikoresho bya radiyo yumuriro wa GaN. Hiyongereyeho igice kinini-cyera-HPSI na SI igice cya insulasiyo kiratandukanye, ubwinshi bw-igice-cy-ubwikorezi bwikwirakwiza bwa 3.5 * 1013 ~ 8 * 1015 / cm3, hamwe na moteri ya elegitoronike; igice cya insulasiyo ni ibikoresho birwanya cyane, birwanya cyane, mubisanzwe bikoreshwa mugukoresha ibikoresho bya microwave, bitayobora.

Semi-insuline ya Silicon Carbide substrate urupapuro SiC wafer

Imiterere ya kirisiti ya SiC igena umubiri wacyo, ugereranije na Si na GaAs, SiC ifite kubintu bifatika; ubugari bwa bande yabujijwe ni nini, hafi inshuro 3 za Si, kugirango umenye neza ko igikoresho gikora ku bushyuhe bwinshi munsi yigihe kirekire cyo kwizerwa; gusenya umurima imbaraga ni ndende, ni inshuro 1O inshuro ya Si, kugirango umenye neza ko ubushobozi bwumubyigano wibikoresho, kuzamura igiciro cyumubyigano; igipimo cya electron cyuzuye ni kinini, ni inshuro 2 za Si, kugirango yongere inshuro igikoresho nubucucike bwimbaraga; ubushyuhe bwumuriro buri hejuru, burenze Si, ubushyuhe bwumuriro buri hejuru, ubushyuhe bwumuriro buri hejuru, ubushyuhe bwumuriro buri hejuru, ubushyuhe bwumuriro buri hejuru, burenze Si, ubushyuhe bwumuriro buri hejuru, ubushyuhe bwumuriro buri hejuru. Ubushyuhe bukabije bwumuriro, burenze inshuro 3 ubwa Si, kongera ubushobozi bwo gukwirakwiza ubushyuhe bwigikoresho no kumenya miniaturizasi yigikoresho.