4H-semi HPSI 2inch SiC substrate wafer Production Dummy Research grade

Substrate ya silicon carbide igabanyijemo ubwoko bw'amashanyarazi n'ubw'ibikoresho bikingira, substrate ya silicon carbide iyobora amashanyarazi n'ubwoko bwa n ikoreshwa cyane cyane mu bikoresho bya epitaxial GaN-based LED n'ibindi bikoresho bya optoelectronic, ibikoresho by'amashanyarazi bishingiye kuri SiC-power, nibindi, kandi substrate ya silicon carbide ya SiC iyobora amashanyarazi ahanini ikoreshwa mu gukora epitaxial ibikoresho bya radio bikoresha ingufu nyinshi za GaN. Byongeye kandi, insulation ya semi-purity HPSI na SI semi-purity itandukanye, intera ya semi-insulation ya semi-purity 3.5 * 1013 ~ 8 * 1015/cm3, ifite electron mobility nyinshi; insulation ya semi-insulation ni ibikoresho birwanya cyane, resistivity ni nyinshi cyane, muri rusange ikoreshwa mu bikoresho bya mikoroonde, idatwara.

Udupapuro twa SiC twa Silicon Carbide dukingira ibice bito

Imiterere ya kristu ya SiC igena imiterere yayo, ugereranije na Si na GaAs, SiC ifite imiterere ifatika; ubugari bw'umugozi bubujijwe ni bunini, hafi inshuro 3 z'ubunini bwa Si, kugira ngo igikoresho gikore ku bushyuhe bwinshi mu gihe kirekire; imbaraga z'aho igikoresho giherereye ni nyinshi, ni inshuro 1O z'ubunini bwa Si, kugira ngo igikoresho gikore neza, cyongere agaciro k'amashanyarazi; igipimo cya elegitoroni cyo hejuru ni kinini, ni inshuro 2 z'ubunini bwa Si, kugira ngo hongerwe inshuro n'ubucucike bw'ingufu z'igikoresho; amashanyarazi ari menshi, arenze Si, amashanyarazi ari menshi, amashanyarazi ari menshi, amashanyarazi ari menshi, amashanyarazi ari menshi, amashanyarazi ari menshi, amashanyarazi ari menshi, amashanyarazi ari menshi, amashanyarazi ari menshi. amashanyarazi ari menshi, arenze inshuro 3 z'ubunini bwa Si, byongera ubushobozi bwo gukwirakwiza ubushyuhe bw'igikoresho no kumenya uburyo igikoresho gikoresha ubucucike.