4inch 6inch 8inch SiC Crystal Gukura Itanura rya CVD

Ibisobanuro bigufi:

XKH's SiC Crystal Growth Furnace CVD Sisitemu yo kubitsa imiti ikoreshwa muburyo bwa tekinoroji yohereza imyuka ya chimique ku isi, igenewe cyane cyane gukura neza kwa SiC nziza. Binyuze mu kugenzura neza ibipimo ngenderwaho birimo umuvuduko wa gazi, ubushyuhe nigitutu, ituma imikurire ya sisitemu ya SiC igenzurwa kuri santimetero 4-8. Sisitemu ya CVD irashobora kubyara ubwoko butandukanye bwa kirisiti ya SiC harimo ubwoko bwa 4H / 6H-N nubwoko bwa 4H / 6H-SEMI, butanga ibisubizo byuzuye kuva mubikoresho kugeza mubikorwa. Sisitemu ishyigikira ibyangombwa bikura kuri waferi ya santimetero 2-12, bigatuma ikenerwa cyane cyane kubyara ingufu za elegitoroniki n’ibikoresho bya RF.

Ohereza imeri kuri twe

Ibiranga

Ihame ry'akazi

Ihame shingiro rya sisitemu ya CVD ikubiyemo kwangirika kwubushyuhe bwa silikoni irimo (urugero, SiH4) hamwe na karubone irimo (urugero, C3H8) imyuka ya preursor yubushyuhe bwinshi (mubisanzwe 1500-2000 ° C), igashyira kristu imwe ya SiC kuri substrate binyuze mumyuka ya gaze ya gaze. Iri koranabuhanga rirakwiriye cyane cyane kubyara umusaruro mwinshi (> 99,9995%) 4H / 6H-SiC kristu imwe ifite ubucucike buke (<1000 / cm²), byujuje ibyangombwa bikenewe mubikoresho bya elegitoroniki nibikoresho bya RF. Binyuze mu kugenzura neza ibigize gaze, umuvuduko w’ubushyuhe n’ubushyuhe, sisitemu ituma habaho kugenzura neza ubwoko bwimikorere ya kristu (ubwoko bwa N / P) no kurwanya.

Ubwoko bwa Sisitemu n'ibipimo bya tekiniki

Ubwoko bwa Sisitemu	Ubushyuhe	Ibintu by'ingenzi	Porogaramu
Ubushyuhe bwo hejuru CVD	1500-2300 ° C.	Graphite induction gushyushya, ± 5 ° C ubushyuhe bumwe	Ubwinshi bwa SiC ikura
CVD ishyushye	800-1400 ° C.	Gushyushya Tungsten filament, igipimo cya 10-50μm / h	SiC epitaxy
VPE CVD	1200-1800 ° C.	Kugenzura ubushyuhe bwa zone nyinshi,> 80% ikoreshwa rya gaze	Umusaruro rusange wa epi-wafer
PECVD	400-800 ° C.	Plasma yazamuye, igipimo cyo kubitsa 1-10μm / h	Hasi ya temp ya SiC yoroheje

Ibintu by'ingenzi biranga tekinike

1. Sisitemu yo hejuru yo kugenzura ubushyuhe
Itanura ririmo sisitemu yo gushyushya ibintu byinshi ishobora kugumana ubushyuhe bugera kuri 2300 ° C hamwe na ± 1 ° C uburinganire bwicyumba cyose gikura. Uku gucunga neza ubushuhe kugerwaho binyuze muri:
12 bigenga bigenga ubushyuhe.
Igenzura ryinshi rya termocouple (Ubwoko C W-Re).
Igihe nyacyo cyo gushushanya imiterere ya algorithms.
Urukuta rwakonje rwamazi kugirango rukurikirane ubushyuhe bwumuriro.

2. Gutanga gaze no kuvanga ikoranabuhanga
Sisitemu yo gukwirakwiza gazi yihariye itanga uburyo bwiza bwo kuvanga no gutanga kimwe:
Igenzura ryinshi hamwe na ± 0.05sccm neza.
Gutera gaze inshuro nyinshi.
Kugenzura ibibanza bya gaze (FTIR spectroscopy).
Indishyi zitemba zikora mugihe cyikura.

3. Kuzamura ubuziranenge bwa Crystal
Sisitemu ikubiyemo udushya twinshi kugirango tunoze ubuziranenge bwa kristu:
Kuzunguruka substrate ufite (0-100rpm programable).
Ubuhanga bugezweho bwo kugenzura imipaka.
Sisitemu yo kugenzura inenge (UV laser ikwirakwiza).
Indishyi ziterwa na Automatic mugihe cyo gukura.

4. Gutunganya Automatic no kugenzura
Byuzuye byimikorere ya resept.
Iterambere-nyaryo ryibintu byiza AI.
Gukurikirana kure no gusuzuma.
1000+ ibipimo byamakuru byinjira (bibitswe kumyaka 5).

5. Ibiranga umutekano no kwizerwa
Inshuro eshatu-zirenze urugero kurinda ubushyuhe.
Sisitemu yo gukuraho byihutirwa.
Igishushanyo mbonera cyubatswe.
98.5% garanti yigihe.

6. Ubwubatsi bunini
Igishushanyo mbonera cyemerera kuzamura ubushobozi.
Bihujwe na 100mm kugeza 200mm ingano ya wafer.
Gushyigikira byombi bihagaritse kandi bitambitse.
Guhindura byihuse ibice byo kubungabunga.

7. Gukoresha ingufu
30% gukoresha ingufu nke ugereranije na sisitemu igereranijwe.
Sisitemu yo kugarura ubushyuhe ifata 60% yubushyuhe.
Gukoresha gazi ikoreshwa neza.
LEED-yujuje ibyangombwa bisabwa.

8. Guhindura Ibikoresho
Gukura polytypes zose zikomeye (4H, 6H, 3C).
Shyigikira byombi bitwara kandi byigana.
Yakira gahunda zitandukanye za doping (N-ubwoko, P-ubwoko).
Bihujwe nubundi buryo bwabanjirije (urugero, TMS, TES).

9. Imikorere ya Vacuum
Umuvuduko wibanze: <1 × 10⁻⁶ Torr
Igipimo cyo kumeneka: <1 × 10⁻⁹ Torr · L / amasegonda
Umuvuduko wo kuvoma: 5000L / s (kuri SiH₄)

Igenzura ryumuvuduko wikora mugihe cyikura
Ibi bisobanuro bya tekiniki byuzuye byerekana ubushobozi bwa sisitemu yo gukora ubushakashatsi-bwo mu rwego rwo hejuru hamwe n’umusaruro mwiza wa SiC kristu hamwe n’inganda ziyobora kandi zitanga umusaruro. Gukomatanya kugenzura neza, kugenzura neza, hamwe nubuhanga bukomeye bituma iyi sisitemu ya CVD ihitamo neza haba R&D hamwe nogukora amajwi muri electronics power, ibikoresho bya RF, nibindi bikoresho bigezweho bya semiconductor.

Ibyiza by'ingenzi

1
• Ubucucike bwuzuye nka <1000 / cm² (4H-SiC)
• Doping uburinganire <5% (wafers ya santimetero 6)
• Isuku ya Crystal> 99,9995%

2. Ubushobozi bunini bw'umusaruro
• Gushyigikira gukura kwa wafer kugera kuri 8
• Uburinganire bwa diameter> 99%
• Guhindura umubyimba <± 2%

3. Kugenzura neza inzira
• Kugenzura ubushyuhe neza ± 1 ° C.
• Kugenzura imyuka ya gaze neza ± 0.1sccm
• Kugenzura igitutu neza ± 0.1Torr

4. Gukoresha ingufu
• 30% ingufu zikoreshwa kuruta uburyo busanzwe
• Igipimo cyubwiyongere bugera kuri 50-200μm / h
• Ibikoresho byigihe> 95%

Ibyingenzi

1. Imbaraga za elegitoroniki
6-cm 4H-SiC substrate ya 1200V + MOSFETs / diode, bigabanya igihombo cyo guhinduranya 50%.

2. 5G Itumanaho
Semi-insuline ya SiC substrates (résistivivite> 10⁸Ω · cm) kuri sitasiyo fatizo PAs, hamwe no gutakaza <0.3dB kuri> 10GHz.

3. Imodoka nshya
Imodoka-yo mu rwego rwa SiC modules yongerera EV intera 5-8% kandi igabanya igihe cyo kwishyuza 30%.

4. Inverteri ya PV
Substrates nkeya ifite imbaraga zo guhindura imikorere irenga 99% mugihe igabanya ubunini bwa sisitemu 40%.

Serivisi za XKH

1. Serivise yihariye
Sisitemu ya CVD ya 4-8.
Shyigikira iterambere ryubwoko bwa 4H / 6H-N, 4H / 6H-SEMI ubwoko bwikingira, nibindi.

2. Inkunga ya tekiniki
Amahugurwa yuzuye kubikorwa no gutezimbere inzira.
24/7 igisubizo cya tekiniki.

3. Ibisubizo bya Turnkey
Serivisi zanyuma-zanyuma kuva kwishyiriraho kugeza kwemeza.

4. Gutanga ibikoresho
2-12 santimetero SiC substrates / epi-wafers irahari.
Shyigikira 4H / 6H / 3C polytypes.

Itandukaniro ryingenzi ririmo:
Kugera kuri 8-santimetero yo gukura.
20% byihuta byiterambere ugereranije ninganda zinganda.
98% sisitemu yo kwizerwa.
Porogaramu yuzuye yo kugenzura ubwenge.