4inch SiC Epi wafer ya MOS cyangwa SBD

Epitaxy bivuga imikurire yikintu cyiza cyo hejuru cyiza cya kirisiti hejuru ya silicon karbide substrate. Muri byo, imikurire ya gallium nitride epitaxial layer kuri kimwe cya kabiri gikingira silicon karbide substrate yitwa epitaxy ya heterogeneous; imikurire ya silicon karbide epitaxial layer hejuru yubutaka bwa silicon karbide substrate yitwa epitaxy ya homogeneous.

Epitaxial ijyanye nigishushanyo mbonera cyibikoresho bisabwa kugirango imikurire yurwego nyamukuru rukora, igena ahanini imikorere ya chip nigikoresho, igiciro cya 23%. Uburyo bukuru bwa epitaxy ya SiC yoroheje muriki cyiciro harimo: kubika imyuka ya chimique (CVD), epitaxy ya molekile beam (MBE), epitaxy ya fase epitaxy (LPE), hamwe na laser pulse na sublimation (PLD).

Epitaxy ni ihuriro rikomeye mu nganda zose. Mugukuza ibice bya epitaxial ya GaN kumasemburo ya silicon karbide substrate, wafers ya GaN epitaxial ishingiye kuri karbide ya silicon, ishobora kurushaho gukorwa mubikoresho bya GaN RF nka transistor nini ya electronique (HEMTs);

Mugukuza silicon carbide epitaxial layer kuri substrate yayobora kugirango ubone silicon carbide epitaxial wafer, no murwego rwa epitaxial ku gukora diode ya Schottky, transistor ya zahabu-ogisijeni igice cya kabiri, insimburangingo ya bipolar transistors hamwe nibindi bikoresho byamashanyarazi, bityo ubwiza bwa epitaxial kumikorere yibikoresho nabwo bigira uruhare runini mubikorwa byiterambere.