Wafer ya SiC Epi ya santimetero 4 kuri MOS cyangwa SBD
Epitaxy yerekeza ku gukura kw'urwego rw'ibikoresho bya kristu imwe nziza ku buso bwa substrate ya silicon carbide. Muri byo, gukura kw'urwego rwa epitaxial rwa gallium nitride ku gice cya silicon carbide gikingira igice cyitwa heterogeneous epitaxy; gukura kw'urwego rwa epitaxial rwa silicon carbide ku buso bwa substrate ya silicon carbide iyobora amashanyarazi byitwa homogeneous epitaxy.
Epitaxial ijyanye n'ibisabwa mu gishushanyo mbonera cy'igikoresho mu gukura kw'urwego rw'ingenzi rw'imikorere, ahanini igena imikorere ya chip n'igikoresho, igiciro cya 23%. Uburyo bw'ingenzi bwa SiC thin film epitaxy muri iki cyiciro burimo: chemical vapor deposition (CVD), molekile epitaxy (MBE), liquid phase epitaxy (LPE), na pulsed laser deposition and sublimation (PLD).
Epitaxy ni ingenzi cyane mu nganda zose. Mu gutera urwego rwa GaN epitaxial kuri substrates za silicon carbide zirinda ubushyuhe, GaN epitaxial wafers zishingiye kuri silicon carbide zirakorwa, zishobora gukorwamo ibikoresho bya GaN RF nka transistors za electron mobility nyinshi (HEMTs);
Mu gukura urwego rwa epitaxial rwa silicon carbide ku cyuma gitwara amazi kugira ngo haboneke silicon carbide epitaxial wafer, no mu cyuma cya epitaxial ku ikorwa rya diode za Schottky, transistors za ogisijeni ya zahabu, transistors za bipolar gate insulated n'ibindi bikoresho by'ingufu, bityo ubwiza bwa epitaxial ku mikorere y'igikoresho bugira ingaruka zikomeye ku iterambere ry'inganda nabyo bigira uruhare runini cyane.
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