6 Inch 4H SEMI Ubwoko bwa SiC ikomatanya substrate Ubunini 500μm TTV≤5μm icyiciro cya MOS

6 Inch 4H SEMI Ubwoko bwa SiC ikomatanya substrate Ubunini 500μm TTV≤5μm MOS urwego rwerekanwe

Ibisobanuro bigufi:

Hamwe niterambere ryihuse ryitumanaho rya 5G hamwe nikoranabuhanga rya radar, ibice 6 bya santimetero 6 ziciriritse SiC compte substrate byahindutse ibikoresho byingenzi byo gukora ibikoresho byihuta cyane. Ugereranije na gakondo ya GaAs, iyi substrate ikomeza kwihanganira cyane (> 10⁸ Ω · cm) mugihe itezimbere ubushyuhe burenze 5x, bikemura neza ibibazo byo gukwirakwiza ubushyuhe mubikoresho bya milimetero. Imbaraga zongera imbaraga mubikoresho bya buri munsi nka terefone ya 5G hamwe n’itumanaho rya terefone bishobora kuba byubatswe kuri iyi substrate. Twifashishije tekinoroji yacu "buffer layer doping compensation", twagabanije ubwinshi bwa micropipe kugera munsi ya 0.5 / cm² kandi twageze kuri microwave ya ultra-low ya 0.05 dB / mm.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Ibipimo bya tekiniki

Ibintu	Ibisobanuro	Ibintu	Ibisobanuro
Diameter	150 ± 0.2 mm	Imbere (Si-face)	Ra≤0.2 nm (5μm × 5μm)
Polytype	4H	Chip Edge, Scratch, Crack (ubugenzuzi bugaragara)	Nta na kimwe
Kurwanya	≥1E8 Ω · cm	TTV	≤5 mm
Kwimura igicucu	≥0.4 mm	Intambara	≤35 mm
Ubusa (2mm> D> 0.5mm)	≤5 ea / Wafer	Umubyimba	500 ± 25 mm

Ibintu by'ingenzi

1. Imikorere idasanzwe-Imikorere idasanzwe
Ubuso bwa santimetero 6-ya insimburangingo ya SiC ikoresha igishushanyo mbonera cya dielectric layer igereranya, bigatuma dielectric ihora ihindagurika rya <2% muri Ka-band (26.5-40 GHz) no kuzamura icyiciro cya 40%. 15% kwiyongera mubikorwa na 20% munsi yo gukoresha ingufu muri modul ya T / R ukoresheje iyi substrate.

2. Gucunga neza Ubushyuhe
Imiterere idasanzwe "ikiraro cyumuriro" igizwe nuburyo butuma ubushyuhe bwa 400 W / m · K. Muri 28 GHz 5G ya sitasiyo ya PA, ubushyuhe bwihuriro buzamuka kuri 28 ° C gusa nyuma yamasaha 24 yo gukora-50 ° C munsi yibisubizo bisanzwe.

3. Ubwiza bwa Wafer
Binyuze mu buryo bunoze bwo gutwara ibintu biva mu kirere (PVT), tugera ku bucucike bwa dislocation <500 / cm² hamwe no Gutandukana kwinshi (TTV) <3 μ m.
4. Gutunganya-Gutunganya neza
Inzira yacu ya lazeri yatunganijwe byumwihariko kuri santimetero 6 ziciriritse ya SiC igizwe na substrate igabanya ubucucike bwa leta hejuru yuburyo bubiri mbere ya epitaxy.

Porogaramu nyamukuru

1. 5G Ibice Byibanze Byibanze
Muri antenna ya Massive ya MIMO, ibikoresho bya GaN HEMT kuri santimetero 6 ziciriritse ya SiC igizwe na substrate igera kuri 200W isohora ingufu kandi> 65% ikora neza. Ibizamini byo murwego kuri 3.5 GHz byerekanaga 30% byiyongera kuri radiyo.

2. Sisitemu y'itumanaho rya satelite
Ikirere cyo munsi yisi (LEO) cyogukoresha icyogajuru ukoresheje iyi substrate yerekana 8 dB hejuru ya EIRP muri Q-band (40 GHz) mugihe igabanya ibiro 40%. SpaceX Starlink itumanaho yarayifashe kugirango ikore byinshi.

3. Sisitemu ya Radar ya Gisirikare
Icyiciro cya array radar T / R modules kuri iyi substrate igera kuri 6-18 GHz yumurongo wumuvuduko n urusaku ruri munsi ya 1,2 dB, ikagura intera ya kilometero 50 muri sisitemu yo kuburira hakiri kare.

4. Imodoka ya milimetero-Umuhengeri Radar
79 GHz yimodoka ya radar ikoresha iyi substrate itezimbere imikurire ya 0.5 °, yujuje ibyangombwa bya L4 byigenga.

Dutanga igisubizo cyuzuye cya serivise yihariye ya santimetero 6-igice cya insuline ya SiC igizwe. Kubijyanye no guhitamo ibipimo bifatika, dushyigikiye kugena neza kurwanya birwanya 10⁶-10¹⁰ Ω · cm. By'umwihariko kubikorwa bya gisirikare, turashobora gutanga ultra-high resistance yo guhitamo> 10⁹ Ω · cm. Itanga uburebure butatu bwa 200μm, 350μm na 500μm icyarimwe, hamwe no kwihanganira kugenzurwa cyane muri ± 10μm, byujuje ibisabwa bitandukanye uhereye kubikoresho byumuvuduko mwinshi kugeza kumashanyarazi menshi.

Kubijyanye nuburyo bwo kuvura hejuru, turatanga ibisubizo bibiri byumwuga: Imashini ya mashini ya mashini (CMP) irashobora kugera kuri atome kurwego rwa atome hamwe na Ra <0.15nm, byujuje ibyifuzo byiterambere bikenerwa cyane; Epitaxial yiteguye kuvura tekinoroji kubisabwa byihuse birashobora gutanga ubuso bworoshye cyane hamwe na Sq <0.3nm hamwe nubunini bwa oxyde isigaye <1nm, byoroshya cyane inzira yo kwitegura kurangiza umukiriya.

XKH itanga ibisubizo byuzuye byabigenewe kuri santimetero 6 ziciriritse ya SiC ikomatanya

1. Ibikoresho bya Parameter
Dutanga uburyo bunoze bwo kurwanya ubukana buri hagati ya 10⁶-10¹⁰ Ω · cm, hamwe nuburyo bwihariye bwo kurwanya-ultra-high resistance> 10⁹ Ω · cm ziboneka mubikorwa bya gisirikare / ikirere.

2. Ibisobanuro birambuye
Uburyo butatu bwubugari busanzwe:

· 200μm (byashyizwe ku bikoresho byihuta cyane)

· 350 mm (ibisobanuro bisanzwe)

· 500μm (yagenewe gukoreshwa imbaraga nyinshi)
· Ibihinduka byose bikomeza kwihanganira ubunini bwa ± 10μm.

3. Tekinoroji yo Kuvura Ubuso

Imashini ya mashini (CMP): Kugera ku buso bwa atome kurwego rwa Ra <0.15nm, byujuje ibyifuzo bikura byikwirakwizwa rya RF hamwe nibikoresho byamashanyarazi.

4. Epi-Yiteguye Gutunganya Ubuso

· Itanga ultra-yoroshye igaragara hamwe na Sq <0.3nm

· Igenzura uburebure bwa oxyde kavukire kuri <1nm

· Kurandura intambwe zigera kuri 3 mbere yo gutunganya ibikoresho byabakiriya