6 Inch Yayobora SiC Yububiko Substrate 4H Diameter 150mm Ra≤0.2nm Warp≤35μm

Ibisobanuro bigufi:

Bitewe ninganda za semiconductor zikurikirana imikorere ihanitse nigiciro gito, insimburangingo ya santimetero 6 ya SiC compte substrate yagaragaye. Binyuze mu buhanga bushya bwo guhuza ibikoresho, iyi wafer ya santimetero 6 igera kuri 85% yimikorere ya waferi gakondo ya santimetero 8 mugihe igura 60% gusa. Ibikoresho byamashanyarazi mubisabwa bya buri munsi nkibikoresho bishya byingufu zamashanyarazi, 5G shingiro yumuriro wamashanyarazi, ndetse na drives-frequency drives mubikoresho byo murugo bihebuje bishobora kuba bimaze gukoresha substrate yubwoko. Ikoranabuhanga ryacu ryemewe rya epitaxial tekinoroji ituma urwego rwa atome ruringaniza rwuzuzanya rwibanze kuri SiC, hamwe nubucucike bwa leta munsi ya 1 × 10¹¹ / cm² · eV - ibisobanuro bigeze kurwego mpuzamahanga ruyoboye.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Ibipimo bya tekiniki

Ibintu	Umusaruroamanota	Dummyamanota
Diameter	6-8	6-8
Umubyimba	350/500 ± 25.0 mm	350/500 ± 25.0 mm
Polytype	4H	4H
Kurwanya	0.015-0.025 ohm · cm	0.015-0.025 ohm · cm
TTV	≤5 mm	≤20 mm
Intambara	≤35 mm	≤55 mm
Imbere (Si-face)	Ra≤0.2 nm (5μm × 5μm)	Ra≤0.2 nm (5μm × 5μm)

Ibintu by'ingenzi

1.Ibyiza Byiza: Ibicuruzwa byacu bya santimetero 6 bya SiC bigize insimburangingo ikoresha tekinoroji ya "grade buffer layer" ikora neza kugirango igabanye ibikoresho kugirango igabanye ibiciro fatizo kuri 38% mugihe ikomeza gukora neza amashanyarazi. Ibipimo bifatika byerekana ko ibikoresho 650V MOSFET ikoresha iyi substrate igera ku gipimo cya 42% kugiciro cyibiciro kuri buri gice ugereranije nibisubizo bisanzwe, bifite akamaro kanini mugutezimbere ibikoresho bya SiC mubikoresho bya elegitoroniki.
2.Ibintu byiza byitwara neza: Binyuze muburyo bwo kugenzura doping ya azote neza, insimburangingo ya santimetero 6 ya SiC igizwe na substrate igera kuri 0.012-0.022Ω · cm, hamwe no guhinduka kugenzurwa muri ± 5%. Ikigaragara ni uko dukomeza guhuza imbaraga ndetse no muri 5mm ya ruguru ya wafer, tugakemura ikibazo kimaze igihe kinini mu nganda.
3.Imikorere yubushyuhe: Module 1200V / 50A yakozwe hifashishijwe substrate yacu irerekana gusa 45 ℃ ihuriro ryubushyuhe bwiyongera hejuru yibidukikije mugikorwa cyuzuye - 65 ℃ munsi ugereranije nibikoresho bigereranywa na silikoni. Ibi bishobozwa n "" umuyoboro wa 3D wubushyuhe "wububiko butezimbere uburyo bwo kuzamura ubushyuhe bwumuriro kuri 380W / m · K hamwe nubushyuhe bwumuriro bugera kuri 290W / m · K.
4.Ibikorwa bitunganijwe neza: Kuburyo budasanzwe bwa santimetero 6 ziyobora SiC ikomatanya, twateje imbere uburyo bwo guhuza ibyuma bya laser byerekana uburyo bwo kugabanya umuvuduko wa 200mm / s mugihe twagenzuraga ibice biri munsi ya 0.3μm. Byongeye kandi, dutanga pre-nikel-isahani ya substrate ihitamo ituma bapfa guhita, bakiza abakiriya intambwe ebyiri.

Porogaramu nyamukuru

Ibikoresho by'ingenzi bya Smart Grid:

Muri ultra-high voltage direct current (UHVDC) sisitemu yo kohereza ikorera kuri k 800kV, ibikoresho bya IGCT bifashisha ibyuma bya santimetero 6 ziyobora SiC yibikoresho byerekana imbaraga zidasanzwe. Ibi bikoresho bigabanukaho 55% muguhindura igihombo mugihe cyo kugabanya ingendo, mugihe byongera imikorere muri sisitemu kurenga 99.2%. Substrates 'yubushyuhe bukabije bwumuriro (380W / m · K) ituma ibishushanyo mbonera bihindura bigabanya ibirenge bya 25% ugereranije nibisanzwe bishingiye kuri silikoni.

Imbaraga nshya z'imodoka:

Sisitemu yo gutwara ibinyabiziga igizwe na santimetero 6 ziyobora SiC igizwe na substrate igera ku mbaraga zidasanzwe za inverter zingana na 45kW / L - kuzamura 60% ugereranije nubushakashatsi bwabo bwa 400V bwa silicon. Igitangaje cyane, sisitemu ikomeza gukora neza 98% murwego rwubushyuhe bwo gukora kuva kuri -40 ℃ kugeza kuri + 175 ℃, bikemura ibibazo byubukonje bwikirere bwibasiye iyakirwa rya EV mu kirere cy’amajyaruguru. Igeragezwa ryisi yose ryerekana ubwiyongere bwa 7.5% mugihe cyimbeho kubinyabiziga bifite ubu buhanga.

Inganda zihindagurika zinganda:

Iyemezwa rya substrate yacu mumashanyarazi yubwenge (IPMs) ya sisitemu ya servo yinganda ihindura inganda zikoresha. Mu bigo bitunganya CNC, izi module zitanga 40% byihuta bya moteri (kugabanya igihe cyihuta kuva kuri 50m kugeza 30m) mugihe ugabanya urusaku rwa electromagnetique kuri 15dB kugeza 65dB (A).

Ibikoresho bya elegitoroniki:

Impinduramatwara ya elegitoroniki yumuguzi irakomeza hamwe na substrate yacu ituma ibisekuruza bizaza 65W GaN byihuta. Izi adaptate zidafite imbaraga zigera kuri 30% kugabanya amajwi (kugeza kuri 45cm³) mugihe zikomeza ingufu zuzuye, tubikesha uburyo bwiza bwo guhinduranya ibintu biranga ibishushanyo mbonera bya SiC. Amashusho yubushyuhe yerekana ubushyuhe ntarengwa bwa 68 ° C gusa mugihe gikomeza - 22 ° C ikonje kurenza ibishushanyo bisanzwe - kuzamura cyane ubuzima bwibicuruzwa n'umutekano.

Serivisi za XKH

XKH itanga ubufasha bwihariye bwo kwishyiriraho ibice 6 bya santimetero ya SiC ikora:

Ubunini bwihariye: Amahitamo arimo 200μm, 300μm, na 350μm ibisobanuro
2. Kugenzura Kurwanya Kurwanya: Guhindura n-ubwoko bwa doping yibanze kuva 1 × 10¹⁸ kugeza 5 × 10¹⁸ cm⁻³

3. Icyerekezo cya Crystal: Inkunga yibyerekezo byinshi harimo (0001) off-axis 4 ° cyangwa 8 °

4. Serivisi zo Kwipimisha: Raporo yuzuye y'ibizamini bya wafer-urwego

Igihe cyambere cyo kuyobora kuva prototyping kugeza kumusaruro rusange birashobora kuba bigufi nkibyumweru 8. Kubakiriya ba stratégies, dutanga serivisi ziterambere ziterambere kugirango tumenye neza ibikenewe byibikoresho.