6 inch Imiyoboro imwe ya kristu ya SiC kuri polycrystalline SiC igizwe na substrate Diameter 150mm P ubwoko bwa N.

Ibisobanuro bigufi:

Monocrystalline SiC ya santimetero 6 kuri polycrystalline SiC comprate substrate yerekana ibikoresho bishya bya silicon karbide (SiC) igisubizo cyibikoresho bigenewe ingufu nyinshi, ubushyuhe bwinshi, hamwe nibikoresho bya elegitoroniki byihuta. Iyi substrate igaragaramo sisitemu imwe ya kirisiti ya SiC ihuza urwego rwa polycrystalline SiC binyuze muburyo bwihariye, ikomatanya ibintu byiza byamashanyarazi bya monocrystalline SiC hamwe nibyiza bya polycrystalline SiC.
Ugereranije n’ibisanzwe byuzuye bya monocrystalline SiC, insimburangingo ya santimetero 6 ya monocrystalline SiC kuri polycrystalline SiC ikomatanya ikomeza imbaraga za electron nyinshi hamwe n’umuvuduko mwinshi w’amashanyarazi mu gihe bigabanya cyane ibiciro by’inganda. Ubunini bwacyo bwa santimetero 6 (150 mm) byerekana ko bihuza n'imirongo ikora ya semiconductor ihari, ituma inganda zipima. Byongeye kandi, igishushanyo mbonera cyemerera gukoresha mu buryo butaziguye ibikoresho byo gukoresha amashanyarazi (urugero, MOSFETs, diode), bikuraho ibikenerwa byongera doping no koroshya ibikorwa.

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Ibicuruzwa birambuye

Ibicuruzwa

Ibipimo bya tekiniki

Ingano:	6 santimetero
Diameter:	Mm 150
Umubyimba:	400-500 mm
Monocrystalline SiC Ibipimo bya Filime
Polytype:	4H-SiC cyangwa 6H-SiC
Kwibanda kuri Doping:	1 × 10¹⁴ - 1 × 10¹⁸ cm⁻³
Umubyimba:	5-20 mm
Impapuro zo Kurwanya:	10-1000 Ω / sq
Imashini ya elegitoronike:	800-1200 cm² / V.
Umuyoboro wa Hole:	100-300 cm² / V.
Ibipimo bya Polycrystalline SiC Buffer
Umubyimba:	50-300 mm
Amashanyarazi:	150-300 W / m · K.
Monocrystalline SiC Substrate Ibipimo
Polytype:	4H-SiC cyangwa 6H-SiC
Kwibanda kuri Doping:	1 × 10¹⁴ - 1 × 10¹⁸ cm⁻³
Umubyimba:	300-500 mm
Ingano y'ibinyampeke:	> 1 mm
Ubuso bwa Surface:	<0,3 mm RMS
Imashini & Amashanyarazi
Gukomera:	9-10 Mohs
Imbaraga zo kwikuramo:	3-4 GPa
Imbaraga zikomeye:	0.3-0.5 GPa
Gusenya Umwanya Imbaraga:	> 2 MV / cm
Ubworoherane bwa Dose:	> 10 Mrad
Ingaruka imwe Yingaruka Kurwanya:	> 100 MeV · cm² / mg
Amashanyarazi:	150-380 W / m · K.
Gukoresha Ubushyuhe:	-55 kugeza 600 ° C.

Ibintu by'ingenzi biranga

Monocrystalline SiC ya santimetero 6 kuri polycrystalline SiC igizwe na substrate itanga impuzandengo idasanzwe yimiterere yimikorere nimikorere, bigatuma ikenerwa nibidukikije byinganda:

1.Cost-Effectiveness: Shingiro ya polycrystalline SiC igabanya cyane ibiciro ugereranije na monocrystalline SiC yuzuye, mugihe monocrystalline SiC igaragara ikora neza murwego rwibikoresho, nibyiza kubisabwa byoroshye.

2.Ibikoresho bidasanzwe byamashanyarazi: Igice cya monocrystalline SiC cyerekana umuvuduko mwinshi wabatwara (> 500 cm² / V · s) hamwe nubucucike buke, bushigikira imikorere yumurongo mwinshi kandi ufite ingufu nyinshi.

3.Ubushyuhe bukabije-Ubushyuhe: SiC isanzwe irwanya ubushyuhe bwo hejuru (> 600 ° C) ituma insimburangingo ikomeza kuba itajegajega mubihe bikabije, bigatuma ibinyabiziga bikoresha amashanyarazi no gukoresha moteri yinganda.

Ubunini bwa 4,6-Ubunini bwa Wafer: Ugereranije na gakondo ya SiC ya santimetero 4, imiterere ya santimetero 6 yongerera umusaruro umusaruro wa chip hejuru ya 30%, bikagabanya ikiguzi cyibikoresho.

5.Igishushanyo mbonera: Imbere ya D-N cyangwa ubwoko bwa P igabanya intambwe zo gutera ion mugukora ibikoresho, kuzamura umusaruro numusaruro.

6.Icungamutungo Ryinshi: Ubushyuhe bwa polycrystalline SiC base (~ 120 W / m · K) yegera icya monocrystalline SiC, ikemura neza ibibazo byo gukwirakwiza ubushyuhe mubikoresho bifite ingufu nyinshi.

Ibi biranga umwanya wa santimetero 6 ziyobora monocrystalline SiC kuri polycrystalline SiC ikomatanya nkigisubizo cyo guhatanira inganda nkingufu zishobora kongera ingufu, ubwikorezi bwa gari ya moshi, hamwe nindege.

Porogaramu Yibanze

Monocrystalline SiC ya santimetero 6 kuri polycrystalline SiC compte substrate yoherejwe neza mubice byinshi bikenerwa cyane:
1.Ibikoresho by'amashanyarazi ya elegitoronike: Byakoreshejwe mumashanyarazi menshi ya SiC MOSFETs na diode kugirango byongere imikorere inverter no kwagura bateri (urugero, Tesla, moderi ya BYD).

2.Ibinyabiziga bitwara ibinyabiziga byo mu nganda: Bituma ubushyuhe bwo hejuru, bwihuta-bwihuta-modules yingufu, kugabanya gukoresha ingufu mumashini aremereye na turbine.

3.Ibikoresho bya Photovoltaic: Ibikoresho bya SiC bitezimbere izuba rihinduka (> 99%), mugihe substrate igizwe nibindi bigabanya ibiciro bya sisitemu.

4.Gutwara gari ya moshi: Bikoreshwa mubikurura bikurura sisitemu yihuta ya gari ya moshi na metero, bitanga imbaraga zo guhangana n’umuvuduko mwinshi (> 1700V) hamwe nimpamvu zifatika.

5.Icyogajuru: Nibyiza kuri sisitemu yingufu za satelite hamwe na moteri yindege igenzura, ishobora guhangana nubushyuhe bukabije nimirasire.

Mu guhimba bifatika, monocrystalline SiC ya santimetero 6 kuri polycrystalline SiC comprate substrate irahuza rwose nibikorwa bisanzwe bya SiC (urugero, lithographie, etching), bisaba ko nta shoramari ryiyongera.

Serivisi za XKH

XKH itanga ubufasha bwuzuye kuri monocrystalline SiC ya santimetero 6 kuri polycrystalline SiC ikomatanya, ikubiyemo R&D kugeza ku musaruro rusange:

1.Kwimenyekanisha: Guhindura umubyimba wa monocrystalline (5-100 mm), kwibanda kuri doping (1e15–1e19 cm⁻³), no kwerekana icyerekezo (4H / 6H-SiC) kugirango wuzuze ibisabwa bitandukanye.

2.Itunganyirizwa rya Wafer: Isoko ryinshi rya santimetero 6 zubutaka hamwe no kunanura inyuma hamwe na serivise ya metallisation yo gucomeka no gukina.

3.Kwemeza tekiniki: Harimo isesengura rya XRD ya kristu, gupima ingaruka za Hall, hamwe no gupima ubushyuhe bwumuriro kugirango byihutishe ubumenyi bwibikoresho.

4.Rapid Prototyping: 2- kugeza kuri 4-ingero (inzira imwe) kubigo byubushakashatsi kugirango byihute byiterambere.

5.Gusesengura Kunanirwa & Optimisation: Ibisubizo-urwego rwibisubizo byo gutunganya ibibazo (urugero, inenge ya epitaxial layer).

Inshingano zacu ni ugushiraho monocrystalline SiC ya santimetero 6 kuri polycrystalline SiC comprate substrate nkigisubizo cyatoranijwe cyo gukora-ibikoresho bya elegitoroniki ya SiC, bitanga inkunga iherezo-iherezo kuva prototyping kugeza kubyara umusaruro.

Umwanzuro

Monocrystalline SiC ya santimetero 6 kuri polycrystalline SiC igizwe na substrate igera ku ntera ishimishije hagati yimikorere nigiciro binyuze muburyo bushya bwa mono / polycrystalline. Mugihe ibinyabiziga byamashanyarazi bigenda byiyongera ninganda 4.0 itera imbere, iyi substrate itanga umusingi wizewe wibikoresho bya elegitoroniki bizakurikiraho. XKH yishimiye ubufatanye kugirango turusheho gucukumbura ubushobozi bwa tekinoroji ya SiC.