SiC imwe itwara amashanyarazi ya santimetero 6 kuri polycrystalline SiC composite substrate. Ubugari bwa 150mm P ubwoko bwa N

Ibisobanuro bigufi:

SiC ya monocrystalline ya santimetero 6 ikoresha amashanyarazi kuri polycrystalline SiC composite substrate igaragaza igisubizo gishya cya silikoni carbide (SiC) cyagenewe ibikoresho by'ikoranabuhanga bifite ingufu nyinshi, ubushyuhe bwinshi, kandi bikoresha frequency nyinshi. Iyi substrate ifite urwego rumwe rukora rwa SiC rufatanye n'ishingiro rya polycrystalline SiC binyuze mu buryo bwihariye, buhuza imiterere y'amashanyarazi ya monocrystalline SiC n'inyungu zihenze za polycrystalline SiC.
Ugereranyije n'ibikoresho bisanzwe bya SiC bya monocrystalline byose, SiC ya monocrystalline ifite santimetero 6 kuri polycrystalline SiC composite substrate igumana uburyo bwinshi bwo kugenda kwa electron no kudakoresha ingufu nyinshi mu gihe igabanya cyane ikiguzi cyo gukora. Ingano yayo ya wafer ya santimetero 150 (150 mm) ituma ihura n'imirongo isanzwe ikora ya semiconductor, bigatuma ikorwa neza. Byongeye kandi, igishushanyo mbonera cy'ibikoresho bitanga ingufu cyemerera gukoreshwa mu buryo butaziguye mu gukora ibikoresho by'amashanyarazi (urugero: MOSFET, diodes), bikuraho gukenera izindi gahunda zo gukoresha doping no koroshya imikorere y'umusaruro.

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Ibiranga

Ibipimo bya tekiniki

Ingano:	6 santimetero
Ingano:	mm 150
Ubunini:	400-500 μm
Ibipimo bya Filimi ya SiC ya Monocrystalline
Ubwoko bwa polytype:	4H-SiC cyangwa 6H-SiC
Kwiyongera ku gipimo cy’imiti ikoreshwa mu gukamura ibiyobyabwenge:	1×10¹⁴ - 1×10¹⁸ cm⁻³
Ubunini:	5-20 μm
Ubudahangarwa bw'urupapuro:	10-1000 Ω/kare
Uburyo bwo kugenda kwa Electron:	800-1200 cm²/Vs
Uburyo bwo kugenda mu mwobo:	100-300 cm²/Vs
Ibipimo bya Polycrystalline SiC Buffer Layer
Ubunini:	50-300 μm
Ubushobozi bwo gutwara ubushyuhe:	150-300 W/m·K
Ibipimo bya Monocrystalline SiC Substrate
Ubwoko bwa polytype:	4H-SiC cyangwa 6H-SiC
Kwiyongera ku gipimo cy’imiti ikoreshwa mu gukamura ibiyobyabwenge:	1×10¹⁴ - 1×10¹⁸ cm⁻³
Ubunini:	300-500 μm
Ingano y'ibinyampeke:	> mm 1
Ubukana bw'ubuso:	< 0.3 mm RMS
Imiterere ya Mekanike n'Amashanyarazi
Ubukomere:	9-10 Mohs
Ingufu zo Gukanda:	3-4 GPa
Ingufu zo Gukurura:	0.3-0.5 GPa
Ingufu z'aho ibintu bihurira:	> 2 MV/cm
Ingano y'igipimo cyose:	> 10 Mrad
Ubudahangarwa bw'Ingaruka z'Ikiza Kimwe:	> 100 MeV·cm²/mg
Ubushobozi bwo gutwara ubushyuhe:	150-380 W/m·K
Ingano y'ubushyuhe mu mikorere:	-55 kugeza kuri 600°C

Ibiranga by'ingenzi

SiC ya monocrystalline ya santimetero 6 ikora ku gice cy’ingenzi cya SiC gitanga uburinganire budasanzwe mu miterere n’imikorere y’ibikoresho, bigatuma ikwiriye ibidukikije birimo inganda nyinshi:

1. Ikiguzi: Ishingiro rya SiC rya polycrystalline rigabanya cyane ikiguzi ugereranije na SiC yuzuye monocrystalline, mu gihe urwego rukora rwa SiC rwa monocrystalline rutuma igikoresho gikora neza, rukaba rwiza cyane ku bikoresho bikoresha amafaranga make.

2. Imiterere idasanzwe y'amashanyarazi: Urukuta rwa SiC rugaragaza uburyo bwo kugenda cyane (>500 cm²/V·s) n'ubucucike buke, rushyigikira imikorere y'igikoresho gifite imbaraga nyinshi n'imbaraga nyinshi.

3. Gukomera ku bushyuhe bwinshi: Kuba SiC ifite ubushobozi bwo guhangana n'ubushyuhe bwinshi (>600°C) bituma substrate igizwe n'ibice byinshi iguma ihamye mu bihe bikomeye, bigatuma ikoreshwa mu modoka zikoresha amashanyarazi n'izikoresha moteri z'inganda.

Ingano ya Wafer isanzwe ya santimetero 4.6: Ugereranyije na substrates za SiC zisanzwe za santimetero 4, imiterere ya santimetero 6 yongera umusaruro wa chip ku kigero kirenga 30%, bigabanya ikiguzi cya buri gikoresho.

5. Igishushanyo mbonera: Ibice bya N-type cyangwa P-type byashyizwemo ifu bigabanya intambwe zo gushyiramo ioni mu gukora ibikoresho, bikongera umusaruro n'umusaruro.

6. Gucunga neza ubushyuhe: Uburyo bwo gutwara ubushyuhe bwa polycrystalline SiC base (~120 W/m·K) bwerekeza kuri monocrystalline SiC, bukemura neza ibibazo byo gukwirakwiza ubushyuhe mu bikoresho bifite ingufu nyinshi.

Izi miterere zishyira SiC ya monocrystalline ya santimetero 6 kuri polycrystalline SiC composite substrate nk'igisubizo cy'ipiganwa ku nganda nka ingufu zishobora kuvugururwa, ubwikorezi bwa gari ya moshi, n'indege.

Porogaramu z'ibanze

SiC ya monocrystalline ya santimetero 6 ikoresha amashanyarazi kuri polycrystalline SiC composite substrate yakoreshejwe neza mu nzego nyinshi zikenerwa cyane:
1. Ingufu z'ibinyabiziga by'amashanyarazi: Zikoreshwa muri MOSFET na diode za SiC zifite voltage nyinshi kugira ngo zongere imikorere myiza ya inverter no kongera uburebure bwa bateri (urugero, Tesla, BYD models).

2. Imashini zitwara moteri mu nganda: Ituma module z'ingufu zikoresha ubushyuhe bwinshi kandi zikoresha frequency nyinshi, ikagabanya ikoreshwa ry'ingufu mu mashini ziremereye na turbine z'umuyaga.

3. Inverters za photovoltaic: Ibikoresho bya SiC byongera imikorere myiza yo guhindura imirasire y'izuba (>99%), mu gihe substrate ivanze igabanya ikiguzi cya sisitemu.

4. Gutwara abantu muri gari ya moshi: Ikoreshwa mu byuma bihindura amashanyarazi ku buryo bworoshye bwo gutwara abantu muri gari ya moshi na gari ya moshi, itanga imbaraga zo kwirinda amashanyarazi menshi (>1700V) n'ibintu bito.

5.Ubwoko bw'ikirere: Ni bwiza cyane kuri sisitemu z'amashanyarazi ya satelite na moteri z'indege, zishobora kwihanganira ubushyuhe bukabije n'imirasire.

Mu gukora ibintu mu buryo bufatika, SiC ya monocrystalline ya santimetero 6 ikora kuri polycrystalline SiC composite substrate ijyanye neza n'imikorere isanzwe ya SiC devices (urugero: lithography, etching), nta kindi gishoro gisaba.

Serivisi za XKH

XKH itanga inkunga yuzuye kuri SiC ya monocrystalline ya santimetero 6 ikora ku gice cy’ingenzi cya SiC cya polycrystalline, ikora ubushakashatsi n’iterambere kugeza ku musaruro mwinshi:

1. Guhindura: Ubunini bw'urwego rwa monocrystalline bushobora guhindurwa (5–100 μm), urugero rwa doping (1e15–1e19 cm⁻³), n'icyerekezo cya kristale (4H/6H-SiC) kugira ngo huzuzwe ibisabwa bitandukanye by'igikoresho.

2. Gutunganya Wafer: Gutanga ibikoresho byinshi bya santimetero 6 bifite serivisi zo kugabanya inyuma no gushyiramo ibyuma kugira ngo bihuzwe.

3. Igenzura rya tekiniki: Rikubiyemo isesengura rya XRD crystallinity, isuzuma ry'ingaruka za Hall, n'isuzuma ry'ubushyuhe kugira ngo byihutishe isuzuma ry'ibikoresho.

4. Gupima byihuse: Ingero za santimetero 2 kugeza kuri 4 (uburyo bumwe) ku bigo by’ubushakashatsi kugira ngo byihutishe iterambere.

5. Isesengura ry'Intege nke n'Ivugurura: Ibisubizo ku rwego rw'ibikoresho mu bibazo byo gutunganya (urugero, inenge zo mu rwego rwa epitaxial).

Intego yacu ni ugushyiraho SiC ya monocrystalline ya santimetero 6 ikoresha amashanyarazi kuri polycrystalline SiC composite substrate nk'igisubizo cyiza cyo gukoresha amashanyarazi ya SiC, gitanga inkunga kuva ku gushushanya kugeza ku gukora ingano y'amashanyarazi.

Umwanzuro

SiC ya monocrystalline ya santimetero 6 ikoresha amashanyarazi kuri polycrystalline SiC composite substrate igera ku bufatanye bwiza hagati y’imikorere n’ikiguzi binyuze mu miterere yayo mishya ya mono / polycrystalline hybrid. Uko imodoka zikoresha amashanyarazi ziyongera kandi Industry 4.0 itera imbere, iyi substrate itanga ishingiro ryizewe ry’ibikoresho by’ikoranabuhanga bishya. XKH yishimiye ubufatanye kugira ngo irusheho gusuzuma ubushobozi bw’ikoranabuhanga rya SiC.