3inch Dia76.2mm SiC substrates HPSI Ubushakashatsi Bwambere na Dummy amanota

Substructive substrate: bivuga kwihanganira 15 ~ 30mΩ-cm ya silicon karbide substrate. Wafer ya silicon carbide epitaxial wafer ikura muri substrate ya silicon carbide substrate irashobora gukomeza gukorwa mubikoresho byamashanyarazi, bikoreshwa cyane mumodoka nshya yingufu, fotora, amashanyarazi, hamwe na transport ya gari ya moshi.

Semi-insulateri ya substrate bivuga kwihanganira hejuru ya 100000Ω-cm ya silicon karbide substrate, ikoreshwa cyane mugukora ibikoresho bya radiyo yumuriro wa gallium nitride, ni ishingiro ryumurongo witumanaho.

Nibintu byibanze mubice byitumanaho ridafite umugozi.

Silicon karbide itwara hamwe nigice cya insulirasi ikoreshwa muburyo butandukanye bwibikoresho bya elegitoroniki nibikoresho byamashanyarazi, harimo ariko ntibigarukira kuri ibi bikurikira:

Ibikoresho byimbaraga nyinshi (semiconductor): insimburangingo ya silicon karbide ifite imbaraga zo kumeneka cyane hamwe nubushyuhe bwumuriro, kandi birakwiriye kubyara ingufu za tristoriste nini na diode nibindi bikoresho.

Ibikoresho bya elegitoroniki ya RF (igice-cy-insulée): Substrate ya Silicon Carbide ifite umuvuduko mwinshi wo kwihanganira no kwihanganira ingufu, bikwiranye na progaramu nka amplificateur ya RF, ibikoresho bya microwave hamwe nu muyoboro mwinshi.

Ibikoresho bya Optoelectronic (igice cya kabiri)

Ibyuma byubushyuhe (biyobora): Substrate ya karubone ya silicon ifite ubushyuhe bwinshi nubushyuhe bwumuriro, bikwiranye nogukora ibyuma byubushyuhe bwo hejuru hamwe nibikoresho byo gupima ubushyuhe.

Igikorwa cyo kubyaza umusaruro no gukoresha silicon karbide itwara hamwe nigice cya insulirasiyo ifite ibice byinshi byimirima hamwe nibishoboka, bitanga uburyo bushya bwo guteza imbere ibikoresho bya elegitoroniki nibikoresho byamashanyarazi.