Wafer ya HPSI SiC ya santimetero 6.5. Wafer ya Silicon Carbide iteye isoni cyane ya SiC
Ikoranabuhanga ryo Gukura rya PVT Silicon Carbide Crystal SiC
Uburyo bwo gukura bwa SiC single crystal burimo ahanini ubu butatu bukurikira: uburyo bw'icyiciro cy'amazi, uburyo bwo gushyira umwuka mu kirere mu bushyuhe bwinshi, n'uburyo bwo gutwara umwuka mu gice cy'umwuka (PVT). Muri bwo, uburyo bwa PVT ni bwo buryo bwakoreweho ubushakashatsi kandi bugezweho mu gukura kwa SiC single crystal, kandi ingorane zabwo mu bya tekiniki ni izi:
(1) SiC imwe kristu iri mu bushyuhe bwinshi bwa 2300 ° C hejuru y'icyumba cya graphite gifunze kugira ngo irangize inzira yo guhindura "ingufu - gaze - ikomeye", uruziga rwo gukura ni rurerure, ruragoye kugenzura, kandi rushobora kwandura microtubules, ibyinjiramo n'ibindi bidafite akamaro.
(2) Silicon carbide imwe kristu, irimo ubwoko burenga 200 butandukanye bwa kristu, ariko ikorwa ry’ubwoko bumwe bwa kristu gusa, byoroshye gutanga impinduka mu buryo bwo gukura bigatuma habaho inenge mu buryo butandukanye, uburyo bwo gutegura ubwoko bumwe bwihariye bwa kristu buragoye kugenzura uburyo ibintu bihagaze, urugero, uburyo bugezweho bwo gukoresha ubwoko bwa kristu bwa 4H.
(3) Ishami rishyushya rya silicon carbide imwe ya kristu (single crystal growth) rigira ubushyuhe butandukanye, bigatuma habaho stress y’imbere mu mubiri, bigatuma habaho kwimuka, amakosa n’izindi nenge.
(4) Uburyo bwo gukura kwa silicon carbide imwe ya kristu bugomba kugenzura byimazeyo imyanda yo hanze, kugira ngo haboneke kristu ifite ubuziranenge bwinshi cyane cyangwa kristu ifite icyerekezo gishyushye. Ku bikoresho bya silicon carbide ya kristu bikoreshwa mu bikoresho bya RF, imiterere y'amashanyarazi igomba kugerwaho hagenzurwa ingano nto y'imyanda n'ubwoko bwihariye bw'inenge z'ingingo muri kristu.
Ishusho irambuye
