6inch SiC Epitaxiy wafer Ubwoko bwa N / P wemere kugenwa

Gahunda yo gutegura silicon karbide epitaxial wafer nuburyo bukoresha tekinoroji ya Vapor Deposition (CVD). Ibikurikira ni amahame ya tekiniki ajyanye nintambwe yo gutegura:

Ihame rya tekiniki:

Gutanga imyuka ya chimique: Gukoresha gaze mbisi mugice cya gaze, mugihe cyihariye cyo kubyitwaramo, irabora hanyuma igashyirwa kuri substrate kugirango ikore firime yoroheje.

Icyiciro cya gaze: Binyuze muri pyrolysis cyangwa reaction reaction, imyuka itandukanye yibikoresho byicyiciro cya gaze ihindurwa muburyo bwa chimique mubyumba byabigenewe.

Intambwe yo kwitegura intambwe:

Kuvura insimburangingo: Substrate ikorerwa isuku yubutaka no kwitegura kugirango hamenyekane ubuziranenge na kristu ya wafer ya epitaxial.

Icyumba cyo gukemura ikibazo: hindura ubushyuhe, umuvuduko nigipimo cyurugero rwibikorwa bya reaction hamwe nibindi bipimo kugirango umenye neza kandi ugenzure uko ibintu byifashe.

Ibikoresho bitangwa: gutanga ibikoresho bya gaze bisabwa mubyumba byerekana, kuvanga no kugenzura umuvuduko ukenewe.

Uburyo bwo kubyitwaramo: Mu gushyushya urugereko rwa reaction, ibiryo bya gaze bigenda byangiza imiti mubyumba kugirango bitange ububiko bwifuzwa, ni ukuvuga karubide ya silicon.

Gukonjesha no gupakurura: Iyo reaction irangiye, ubushyuhe buragabanuka buhoro buhoro kugirango ukonje kandi ushimangire ibyabitswe mubyumba byabigenewe.

Epitaxial wafer annealing na nyuma yo gutunganywa: wafer yabitswe epitaxial wafer irashyirwa hamwe hanyuma ikanatunganywa kugirango itezimbere amashanyarazi na optique.

Intambwe yihariye nuburyo bwa silicon karbide epitaxial wafer yo gutegura gahunda irashobora gutandukana bitewe nibikoresho byihariye nibisabwa. Ibyavuzwe haruguru ni inzira rusange yimikorere nihame, imikorere yihariye igomba guhinduka no kunozwa ukurikije uko ibintu bimeze.