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Custom N Ubwoko bwa SiC Imbuto Substrate Dia153 / 155mm Kuri Electronics

Custom N Ubwoko bwa SiC Imbuto Substrate Dia153 / 155mm Kubijyanye na Electronics Yamashusho Yerekanwe
  • Custom N Ubwoko bwa SiC Imbuto Substrate Dia153 / 155mm Kuri Electronics
  • Custom N Ubwoko bwa SiC Imbuto Substrate Dia153 / 155mm Kuri Electronics
  • Custom N Ubwoko bwa SiC Imbuto Substrate Dia153 / 155mm Kuri Electronics

Ibisobanuro bigufi:

Imbuto ya Silicon Carbide (SiC) ikora nkibikoresho fatizo bya semiconductor yo mu gisekuru cya gatatu, itandukanijwe nubushyuhe bwo hejuru bwumuriro mwinshi cyane, imbaraga zumuriro wumuriro wumuriro, hamwe na moteri ya elegitoronike. Iyi mitungo ituma ari ntangarugero kubikoresho bya elegitoroniki, ibikoresho bya RF, ibinyabiziga byamashanyarazi (EV), hamwe ningufu zishobora gukoreshwa. XKH kabuhariwe muri R&D no kubyaza umusaruro imbuto nziza ya SiC yo mu bwoko bwa SiC, ikoresha uburyo bugezweho bwo gukura bwa kristu nka Transport Vapor Transport (PVT) hamwe n’ubushyuhe bwo hejuru bwa Temperature Chemical Vapor Deposition (HTCVD) kugirango harebwe ubuziranenge bwa kristaline.

 

 


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    • Ibiranga

    SiC imbuto ya wafer 4
    SiC imbuto ya wafer 5
    SiC imbuto ya wafer 6

    Menyekanisha

    Imbuto ya Silicon Carbide (SiC) ikora nkibikoresho fatizo bya semiconductor yo mu gisekuru cya gatatu, itandukanijwe nubushyuhe bwo hejuru bwumuriro mwinshi cyane, imbaraga zumuriro wumuriro wumuriro, hamwe na moteri ya elegitoronike. Iyi mitungo ituma ari ntangarugero kubikoresho bya elegitoroniki, ibikoresho bya RF, ibinyabiziga byamashanyarazi (EV), hamwe ningufu zishobora gukoreshwa. XKH kabuhariwe muri R&D no kubyaza umusaruro imbuto nziza ya SiC yo mu bwoko bwa SiC, ikoresha uburyo bugezweho bwo gukura bwa kristu nka Transport Vapor Transport (PVT) hamwe n’ubushyuhe bwo hejuru bwa Temperature Chemical Vapor Deposition (HTCVD) kugirango harebwe ubuziranenge bwa kristaline.

    X. Ibikorwa byacu bihujwe bihagaritse gukura kwa kristu, gukata wafer, gusya, no kugenzura, hamwe nubushobozi bwo gukora buri kwezi burenga waferi 5.000 kugirango buhuze ibyifuzo bitandukanye byinzego zubushakashatsi, abakora inganda zikoresha amashanyarazi, hamwe n’amasosiyete y’ingufu zishobora kuvugururwa.

    Byongeye kandi, dutanga ibisubizo byihariye, harimo:

    Icyerekezo cya Crystal icyerekezo (4H-SiC, 6H-SiC)

    Doping yihariye (Aluminium, Azote, Boron, nibindi)

    Amashanyarazi meza cyane (Ra <0.5 nm)

     

    XKH ishyigikira icyitegererezo gishingiye ku gutunganya, kugisha inama tekinike, hamwe na prototyping ntoya kugirango itange ibisubizo byiza bya SiC.

    Ibipimo bya tekiniki

    Silicon karbide imbuto wafer
    Polytype 4H
    Ikosa ryerekana icyerekezo 4 ° yerekeza kuri <11-20> ± 0.5º
    Kurwanya Kumenyekanisha
    Diameter 205 ± 0.5mm
    Umubyimba 600 ± 50μm
    Ubugome CMP, Ra≤0.2nm
    Ubucucike bwa Micropipe ≤1 ea / cm2
    Igishushanyo ≤5, Uburebure bwose≤2 * Diameter
    Imipira / impande Nta na kimwe
    Ikimenyetso cya laser imbere Nta na kimwe
    Igishushanyo ≤2, Uburebure bwose≤Ibipimo
    Imipira / impande Nta na kimwe
    Agace ka polytype Nta na kimwe
    Ikimenyetso cya laser inyuma 1mm (uhereye hejuru)
    Impande Chamfer
    Gupakira Cassette ya Multi-Wafer

    SiC Imbuto Substrates - Ibiranga Ibyingenzi

    1. Ibintu bidasanzwe byumubiri

    · Umuyoboro mwinshi cyane (~ 490 W / m · K), urenze cyane silikoni (Si) na gallium arsenide (GaAs), bigatuma biba byiza cyane gukonjesha ibikoresho byinshi.

    · Kumeneka imbaraga zumurima (~ 3 MV / cm), zituma imikorere ihamye mugihe cyumuvuduko mwinshi, ingenzi kuri EV inverters hamwe ningufu zinganda.

    · Umuyoboro mugari (3.2 eV), kugabanya imiyoboro yamenetse ku bushyuhe bwinshi no kongera ibikoresho byizewe.

    2. Ubwiza bwa Crystalline

    · PVT + HTCVD ikorana buhanga rya tekinoroji igabanya inenge ya micropipe, ikomeza ubucucike buri munsi ya cm 500.

    · Wafer umuheto / warp <10 μ m hamwe nubuso bwubuso Ra <0.5 nm, byemeza guhuza na lithographie yuzuye neza hamwe na firime yoroheje.

    3. Amahitamo atandukanye ya Doping

    · N-ubwoko (Azote-yuzuye): Kurwanya bike (0.01-0.02 Ω · cm), byashyizwe mubikorwa bya radiyo nini cyane.

    · Ubwoko bwa P (Aluminium-Doped): Nibyiza kububasha MOSFETs na IGBTs, kuzamura umuvuduko wabatwara.

    · Semi-insulasiyo ya SiC (Vanadium-yuzuye): Kurwanya> 10⁵ Ω · cm, bigenewe moderi ya 5G RF imbere.

    4. Ihungabana ry’ibidukikije

    · Kurwanya ubushyuhe bwo hejuru (> 1600 ° C) hamwe nuburemere bwimirasire, bikwiranye nikirere, ibikoresho bya kirimbuzi, nibindi bidukikije bikabije.

    SiC Imbuto Substrates - Porogaramu Yibanze

    1. Amashanyarazi

    · Ibinyabiziga by'amashanyarazi (EV): Byakoreshejwe mumashanyarazi (OBC) hamwe na inverter kugirango tunoze imikorere kandi bigabanye imicungire yumuriro.

    · Ingufu zinganda zinganda: Itezimbere inverteri ya fotovoltaque hamwe na gride yubwenge, igera kuri 99% yo guhindura ingufu.

    2. Ibikoresho bya RF

    · 5G Base Sitasiyo: Igice cya insuline ya SiC ituma GaN-kuri-SiC RF yongerera ingufu ingufu, igashyigikira itumanaho ryinshi, rikoresha ingufu nyinshi.

    Itumanaho rya Satelite: Ibiranga igihombo gito bituma bikwiranye nibikoresho bya milimetero.

    3. Ingufu zisubirwamo nububiko bwingufu

    · Imirasire y'izuba: SiC MOSFETs izamura imikorere ya DC-AC mugihe igabanya ibiciro bya sisitemu.

    · Sisitemu yo Kubika Ingufu (ESS): Ihindura ibyerekezo byombi kandi ikongerera igihe cya bateri.

    4. Ingabo zirwanira mu kirere

    · Sisitemu ya Radar: Ibikoresho bikomeye bya SiC bikoreshwa muri radar ya AESA (Active Electronically Scanned Array).

    · Imicungire y’ingufu zo mu kirere: Imirasire irwanya imirasire ya SiC ni ingenzi cyane mu butumwa bwimbitse.

    5. Ubushakashatsi & Emerging Technologies 

    · Kubara Quantum: Ubuziranenge-SiC butuma spin qubit ikora ubushakashatsi. 

    · Sensor-Ubushyuhe Bwinshi: Byoherejwe mubushakashatsi bwa peteroli no gukurikirana reaction ya nucleaire.

    SiC Imbuto Substrates - Serivisi za XKH

    1. Tanga inyungu zinyururu

    · Inganda zishyizwe hamwe: Igenzura ryuzuye kuva ifu ya SiC ifite isuku kugeza kuri wafer yarangiye, byemeza igihe cyo kuyobora ibyumweru 4-6 kubicuruzwa bisanzwe.

    · Kurushanwa kugiciro: Ubukungu bwikigereranyo butuma ibiciro biri hasi ya 15-20% ugereranije nabanywanyi, hamwe ninkunga yamasezerano maremare (LTAs).

    2. Serivise yihariye

    · Icyerekezo cya Crystal: 4H-SiC (bisanzwe) cyangwa 6H-SiC (porogaramu zihariye).

    · Doping optimizasique: Ikoreshwa rya N-Ubwoko / P-Ubwoko bwa kimwe cya kabiri.

    · Kuringaniza neza: CMP gusya hamwe na epi-yiteguye kuvura hejuru (Ra <0.3 nm).

    3. Inkunga ya tekiniki 

    · Kwipimisha icyitegererezo kubuntu: Harimo raporo yo gupima ingaruka za XRD, AFM, na Hall. 

    · Ubufasha bwo kwigana ibikoresho: Bishyigikira gukura kwa epitaxial no gukora neza ibikoresho. 

    4. Igisubizo cyihuse 

    · Porotipi nkeya: Urutonde ntarengwa rwa wafer 10, rutangwa mugihe cyibyumweru 3. 

    · Ibikoresho byo ku isi: Ubufatanye na DHL na FedEx mugutanga inzu ku nzu. 

    5. Ubwishingizi bufite ireme 

    · Igenzura ryuzuye: Covers X-ray topografiya (XRT) nisesengura ryubucucike. 

    · Impamyabumenyi mpuzamahanga: Yubahirije IATF 16949 (imodoka-yo mu rwego) hamwe na AEC-Q101.

    Umwanzuro

    Imbuto ya XKH ya SiK isumba izindi mu bwiza bwa kristaline, itangwa ry’itumanaho rihamye, hamwe no guhinduranya ibintu, ikora ibikoresho bya elegitoroniki, itumanaho rya 5G, ingufu zishobora kongera ingufu, hamwe n’ikoranabuhanga ryo kwirwanaho. Dukomeje guteza imbere tekinoroji ya SiC-8-y-umusaruro-mwinshi kugirango duteze imbere igice cya gatatu cya semiconductor inganda imbere.

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