Ubwoko bwa SiC bw'imbuto zikozwe mu buryo bwa N Dia 153/155mm ku ngufu z'amashanyarazi

Imbuto ya SiC y'ubwoko bwa N yihariye Dia 153/155mm yo gukoresha amashanyarazi y'amashanyarazi Ishusho yagaragaye

Ibisobanuro bigufi:

Imbuto za Silicon Carbide (SiC) zikoreshwa nk'ibikoresho by'ibanze ku mashini za semiconductor zo mu gisekuru cya gatatu, zirangwa no gutwara ubushyuhe bwinshi cyane, imbaraga z'amashanyarazi zisenyuka cyane, ndetse no kugenda cyane kwa electron. Iyi miterere ituma ari ngombwa cyane mu bikoresho by'ikoranabuhanga, ibikoresho bya RF, imodoka zikoresha amashanyarazi (EVs), ndetse no gukoresha ingufu zishobora kuvugururwa. XKH yihariye mu bushakashatsi no guteza imbere no gukora imbuto za SiC nziza, ikoresha uburyo bugezweho bwo gukura nk'ingufu zikomoka ku mwuka (PVT) n'ubushyuhe bwinshi (HTCVD) kugira ngo habeho ubwiza bwa crystalline bugaragara mu nganda.

Ohereza imeri kuri twe

Ibiranga

Shyiraho

XKH itanga imbuto za SiC za santimetero 4, santimetero 6, na santimetero 8 zifite ubushobozi bwo guhinduranya ubwoko bwa N/P, zigatanga ubushobozi bwo kurwanya ubukana bwa 0.01-0.1 Ω·cm n'ubucucike buri munsi ya cm⁻² 500, bigatuma ziba nziza cyane mu gukora MOSFET, Schottky Barrier Diodes (SBDs), na IGBTs. Uburyo bwacu bwo gukora buhuza imiterere y'ibumba bukubiyemo gukura kwa kristalo, gukata wafer, kuyisukura no kuyigenzura, hamwe n'ubushobozi bwo gukora wafers zigera ku 5.000 buri kwezi kugira ngo zihuze n'ibyifuzo bitandukanye by'ibigo by'ubushakashatsi, inganda zikora ibikoresho bya semiconductor, n'ibigo bitanga ingufu zisubira.

Byongeye kandi, dutanga ibisubizo byihariye, birimo:

Guhindura icyerekezo cya kristu (4H-SiC, 6H-SiC)

Gukoresha imiti yihariye (Aluminium, Azote, Boron, nibindi)

Gusukura neza cyane (Ra < 0.5 nm)

XKH ishyigikira gutunganya hakoreshejwe ingero, inama za tekiniki, no gukora ibishushanyo mbonera by'amatsinda mato kugira ngo bitange ibisubizo byiza bya SiC substrate.

Ibipimo bya tekiniki

Urusenda rw'imbuto za karubide rwa silikoni
Ubwoko bwa polikopi	4H
Ikosa ry'icyerekezo cy'ubuso	4°ugana<11-20>±0.5º
Ubushobozi bwo kwirinda	guhindura ibintu
Ingano	205±0.5mm
Ubunini	600±50μm
Ubukana	CMP,Ra≤0.2nm
Ubucucike bw'imiyoboro mito	≤1 buri kimwe/cm2
Imikufi	≤5, Uburebure bwose ≤2 * Diameter
Uduce tw'inkombe/imirongo	Nta na kimwe
Ikimenyetso cya laser imbere	Nta na kimwe
Imikufi	≤2, Uburebure bwose ≤ Diameter
Uduce tw'inkombe/imirongo	Nta na kimwe
Uduce twa polytype	Nta na kimwe
Kugaragaza inyuma hakoreshejwe laser	1mm (uhereye ku nkombe yo hejuru)
Inkombe	Chamfer
Gupfunyika	Kaseti ifite imigozi myinshi

Imbuto za SiC - Ibiranga by'ingenzi

1. Imiterere idasanzwe y'umubiri

· Ifite ubushyuhe bwinshi (~490 W/m·K), irusha cyane silicon (Si) na gallium arsenide (GaAs), bigatuma iba nziza cyane mu gukonjesha ibikoresho bifite imbaraga nyinshi.

· Ingufu z'aho umuriro unyura (~ 3 MV/cm), zituma habaho imikorere ihamye mu gihe cy'amashanyarazi menshi, bikaba ari ingenzi cyane ku byuma bihindura amashanyarazi bya EV n'ibikoresho by'amashanyarazi by'inganda.

· Icyuho kinini (3.2 eV), kigabanya amazi asohoka mu bushyuhe bwinshi kandi kikongera ubwizigirwa bw'igikoresho.

2. Ubwiza bw'amakristale yo mu rwego rwo hejuru

· Ikoranabuhanga rya PVT + HTCVD hybrid rigabanya ubusembwa bw'imiyoboro mito, rigakomeza ubucucike bw'imiyoboro iri munsi ya cm⁻² 500.

· Umuheto/umugongo wa Wafer < 10 μm n'ubushyuhe bw'ubuso Ra < 0.5 nm, bifasha guhuza na lithography igezweho cyane hamwe n'uburyo bwo gushyiramo icyuma gito.

3. Amahitamo atandukanye yo gukoresha imiti igabanya ubukana bw'ibiyobyabwenge

·Ubwoko bwa N (Azote ivanze): Ingufu nke zo kwirinda (0.01-0.02 Ω·cm), zikoreshwa neza mu bikoresho bya RF bifite umurongo wo hejuru.

· Ubwoko bwa P (Ifite aluminiyumu): Ni nziza kuri MOSFET z'ingufu na IGBT, bigatuma umuyoboro w'amashanyarazi ugenda neza.

· SiC irinda ubushyuhe (ifite Vanadium): Ingufu zo kwirinda > 10⁵ Ω·cm, zagenewe module za 5G RF imbere.

4. Gutuza ibidukikije

· Ubudahangarwa bw'ubushyuhe bwinshi (>1600°C) n'ubukana bw'imirasire, bikwiranye n'ikirere, ibikoresho bya kirimbuzi, n'ahandi hantu hakomeye.

Imbuto za SiC - Ikoreshwa ry'ibanze

1. Ingufu z'amashanyarazi

· Imodoka zikoresha amashanyarazi (EV): Zikoreshwa mu byuma bitanga umuriro (OBC) no mu byuma bihindura amashanyarazi kugira ngo byongere imikorere myiza kandi bigabanye ibyo zikenera mu gucunga ubushyuhe.

· Sisitemu z'Ingufu z'Inganda: Yongera inverters za photovoltaic na smart grids, bigatuma habaho gukoresha ingufu zirenze 99%.

2. Ibikoresho bya RF

· Sitasiyo za 5G Base: Substrates za SiC zirinda ubushyuhe zituma amplifiers za GaN-on-SiC RF zitanga ingufu nyinshi, zishyigikira uburyo bwo kohereza ibimenyetso ku ngufu nyinshi.

Itumanaho rya Satelite: Imiterere y'igihombo gito ituma ikoreshwa mu bikoresho bifite milimetero.

3. Ingufu zisubira n'ububiko bw'ingufu

· Ingufu z'izuba: SiC MOSFETs zongerera ubushobozi bwo guhindura DC-AC mu gihe zigabanya ikiguzi cya sisitemu.

· Sisitemu zo kubika ingufu (ESS): Ihindura uburyo bwo guhindura ingufu mu buryo bw'icyerekezo cy'ibiri kandi yongerera igihe bateri imara.

4. Ubwunganizi n'Ibyerekeye Ikiresi

· Sisitemu za Radar: Ibikoresho bya SiC bifite imbaraga nyinshi bikoreshwa muri radar za AESA (Active Electronically Scanned Array).

· Gucunga Ingufu z'Icyogajuru: Ibyuma bya SiC birwanya imirasire ni ingenzi mu butumwa bwo mu kirere.

5. Ubushakashatsi n'Ikoranabuhanga Rigezweho

· Kwandika Kwamakora: SiC ifite isuku nyinshi ituma ubushakashatsi bwa spin qubit bukorwa.

· Utwuma dupima ubushyuhe bwinshi: Dukoreshwa mu gushakisha peteroli no kugenzura ikoreshwa ry'ingufu za kirimbuzi.

Imbuto za SiC - Serivisi za XKH

1. Ibyiza by'Uruhererekane rw'Ibicuruzwa

· Inganda zihujwe mu buryo buhagaze: Igenzura ryuzuye kuva ku ifu ya SiC isukuye cyane kugeza ku mavuta yarangiye, bigatuma habaho igihe cyo gutanga umusaruro w’ibicuruzwa bisanzwe mu gihe cy’ibyumweru 4-6.

· Ihiganwa ry'ibiciro: Ubukungu bwo ku rwego rwo hejuru butuma ibiciro bigabanukaho 15-20% ugereranije n'abo bahanganye, hamwe n'inkunga y'Amasezerano y'Igihe Kirekire (LTAs).

2. Serivisi zo guhindura ibintu

· Icyerekezo cya kristalo: 4H-SiC (isanzwe) cyangwa 6H-SiC (porogaramu zihariye).

· Gukoresha imiti igabanya ubushyuhe: Imiterere ya N-type/P-type/semi-insulation ijyanye n'imiterere yayo.

· Gusukura bigezweho: Gusukura CMP no gutunganya ubuso bumaze gushya (Ra < 0.3 nm).

3. Inkunga ya tekiniki

· Isuzuma ry'icyitegererezo ku buntu: Ririmo raporo zo gupima ingaruka za XRD, AFM, na Hall.

· Ubufasha mu kwigana ibikoresho: Bufasha gukura kwa epitaxial no kunoza imiterere y'ibikoresho.

4. Gusubiza vuba

· Gutanga ingero nke: Nibura wafer 10 zitangwa mu gihe cy'ibyumweru 3.

· Ibikoresho mpuzamahanga: Ubufatanye na DHL na FedEx mu gutanga serivisi urugo ku rundi.

5. Igenzura ry'ubuziranenge

· Igenzura ryuzuye: Rikubiyemo imiterere y'ubutaka bwa X-ray (XRT) n'isesengura ry'ubucucike bw'ibisebe.

· Impamyabushobozi mpuzamahanga: Ikurikiza amahame ya IATF 16949 (ay'imodoka) na AEC-Q101.

Umwanzuro

Imbuto za XKH zo mu bwoko bwa SiC zikora neza cyane mu bwiza bwa kristale, kudahindagurika mu mikorere y’uruhererekane rw’ibikoresho, no koroshya ihinduka ry’imiterere, zitanga ibikoresho by’ikoranabuhanga bikoresha ingufu, itumanaho rya 5G, ingufu zisubiramo, n’ikoranabuhanga ryo kurinda. Dukomeje guteza imbere ikoranabuhanga rya SiC rya santimetero 8 mu gukora ibintu byinshi kugira ngo dutere imbere inganda za semiconductor zo mu cyiciro cya gatatu.

Ibanjirije iyi: Isahani ya SiC ceramic/agasanduku k'icyuma gifata wafer ya santimetero 4 na santimetero 6 kuri ICP

Ibikurikira: Uduce twa Crystal y'imbuto ya SiC twakozwe mu buryo bwihariye Dia 205/203/208 4H-N Ubwoko bwa 4H-N bwo gutumanaho hakoreshejwe optique