Guhindura GaN-kuri-SiC Epitaxial Wafers (100mm, 150mm) - Amahitamo menshi ya SiC Substrate (4H-N, HPSI, 4H / 6H-P)
Ibiranga
● Umubyimba wa Epitaxial: Guhindura kuva1.0 µmKuri3.5 µm, byashyizwe hejuru kubububasha buhanitse no gukora inshuro nyinshi.
C Amahitamo ya SiC: Iraboneka hamwe na substrate zitandukanye za SiC, harimo:
- 4H-N.
- HPSI: Byinshi-Byera Semi-Insulation SiC kubisabwa bisaba kwigunga amashanyarazi.
- 4H / 6H-P: Kuvanga 4H na 6H-SiC kugirango habeho kuringaniza imikorere myiza kandi yizewe.
Size Ingano ya Wafer: Iraboneka muri100mmna150mmdiameter kugirango ihindurwe mugupima ibikoresho no kwishyira hamwe.
Umuvuduko mwinshi wo kumeneka: GaN kuri tekinoroji ya SiC itanga imbaraga zo kumeneka cyane, zitanga imikorere ikomeye mumashanyarazi menshi.
● Ubushyuhe bukabije: SiC yihariye yubushyuhe bwumuriro (hafi 490 W / m · K.) itanga ubushyuhe bwiza bwo gukwirakwiza imbaraga-zikoreshwa cyane.
Ibisobanuro bya tekiniki
| Parameter | Agaciro |
| Diameter | 100mm, 150mm |
| Icyorezo cya Epitaxial | 1.0 µm - 3.5 µm (byemewe) |
| Ubwoko bwa SiC | 4H-N, HPSI, 4H / 6H-P |
| Amashanyarazi ya SiC | 490 W / m · K. |
| Kurwanya SiC | 4H-N: 10 ^ 6 Ω · cm,HPSI: Igice cya kabiri,4H / 6H-P: Kuvanga 4H / 6H |
| Ubunini bwa GaN | 1.0 µm - 2.0 µm |
| Kwitonda kwa GaN | 10 ^ 18 cm ^ -3 kugeza 10 ^ 19 cm ^ -3 (birashoboka) |
| Ubuziranenge bwa Wafer | RMS: <1 nm |
| Ubucucike | <1 x 10 ^ 6 cm ^ -2 |
| Wafer Bow | <50 µm |
| Kubeshya | <5 µm |
| Ubushyuhe ntarengwa bwo gukora | 400 ° C (bisanzwe kubikoresho bya GaN-kuri-SiC) |
Porogaramu
Electron Electronics:Wafers ya GaN-kuri-SiC itanga umusaruro mwinshi no gukwirakwiza ubushyuhe, bigatuma iba nziza kubongerera ingufu, ibikoresho byo guhindura amashanyarazi, hamwe n’umuzunguruko w’amashanyarazi ukoreshwa mu binyabiziga by’amashanyarazi, sisitemu y’ingufu zishobora kuvugururwa, n’imashini zikoreshwa mu nganda.
● Amashanyarazi ya RF:Ihuriro rya GaN na SiC riratunganye cyane kuri progaramu ya radiyo nini cyane, ikoresha ingufu za RF nka itumanaho, itumanaho rya satelite, hamwe na sisitemu ya radar.
Ikirere n'Ingabo:Izi waferi zikwiranye n’ikoranabuhanga mu kirere no kwirwanaho bisaba ingufu za elegitoroniki zikoresha ingufu nyinshi hamwe na sisitemu y'itumanaho ishobora gukora mu bihe bibi.
Porogaramu zikoresha ibinyabiziga:Byiza kuri sisitemu ikora cyane mumashanyarazi (EV), ibinyabiziga bivangavanze (HEVs), hamwe na sitasiyo yumuriro, bigafasha guhindura no kugenzura neza.
Systems Sisitemu ya Gisirikare na Radar:WaNers ya GaN-kuri-SiC ikoreshwa muri sisitemu ya radar kugirango ikore neza, ubushobozi bwo gukoresha ingufu, hamwe nubushyuhe bwumuriro mubidukikije bisaba.
● Microwave na Millimeter-Wave Porogaramu:Kuri sisitemu yo gutumanaho izakurikiraho, harimo 5G, GaN-kuri-SiC itanga imikorere myiza muri microwave ifite ingufu nyinshi na milimetero-yumurongo.
Ikibazo
Q1: Ni izihe nyungu zo gukoresha SiC nka substrate ya GaN?
A1:Silicon Carbide (SiC) itanga ubushyuhe bwo hejuru bwumuriro, imbaraga zo kumeneka cyane, nimbaraga za mashini ugereranije nubutaka gakondo nka silicon. Ibi bituma GaN-kuri-SiC wafers nziza cyane kubububasha bukomeye, inshuro nyinshi, hamwe nubushyuhe bwo hejuru. SiC substrate ifasha gukwirakwiza ubushyuhe butangwa nibikoresho bya GaN, kunoza kwizerwa no gukora.
Q2: Ubunini bwa epitaxial burashobora gutegurwa kubikorwa byihariye?
A2:Nibyo, epitaxial layer yububiko irashobora gutegurwa murwego rwa1.0 µm kugeza kuri 3.5 µm, ukurikije imbaraga nibisabwa bya progaramu yawe. Turashobora guhuza ubunini bwa GaN kugirango tunonosore imikorere kubikoresho byihariye nka amplificateur power, sisitemu ya RF, cyangwa imirongo myinshi yumurongo.
Q3: Ni irihe tandukaniro riri hagati ya 4H-N, HPSI, na 4H / 6H-P SiC?
A3:
- 4H-N: Azote-yuzuye 4H-SiC ikoreshwa muburyo bukoreshwa cyane bisaba imikorere ya elegitoroniki.
- HPSI: Byinshi-Byera Semi-Insulating SiC itanga amashanyarazi, nibyiza kubisabwa bisaba amashanyarazi make.
- 4H / 6H-P: Uruvange rwa 4H na 6H-SiC iringaniza imikorere, itanga uruvange rwimikorere ihanitse kandi ikomeye, ikwiranye nuburyo butandukanye bwa elegitoroniki ikoreshwa.
Q4: Ese ibi byuma bya GaN-kuri-SiC birakwiriye gukoreshwa ingufu nyinshi nkibinyabiziga byamashanyarazi ningufu zishobora kubaho?
A4:Nibyo, waferi ya GaN-kuri-SiC ikwiranye neza nogukoresha ingufu nyinshi nkibinyabiziga byamashanyarazi, ingufu zishobora kubaho, hamwe na sisitemu yinganda. Umuvuduko mwinshi wo kumeneka, amashanyarazi menshi, hamwe nubushobozi bwo gukoresha ingufu za GaN-kuri-SiC bibafasha gukora neza mugusaba guhindura amashanyarazi no kugenzura imiyoboro.
Q5: Ubucucike busanzwe bwa disiki ni ubuhe?
A5:Ubucucike bwa dislocation yibi bikoresho bya GaN-kuri-SiC mubisanzwe<1 x 10 ^ 6 cm ^ -2, itanga ubwiyongere bwiza bwa epitaxial, kugabanya inenge no kunoza imikorere yibikoresho no kwizerwa.
Q6: Nshobora gusaba ubunini bwa wafer cyangwa ubwoko bwa SiC substrate?
A6:Nibyo, dutanga ubunini bwa wafer yihariye (100mm na 150mm) hamwe na SiC substrate yubwoko (4H-N, HPSI, 4H / 6H-P) kugirango duhuze ibyifuzo byawe. Nyamuneka twandikire kugirango ubone ubundi buryo bwo kwihitiramo no kuganira kubyo usabwa.
Q7: Nigute waN ya GaN-kuri-SiC ikora mubidukikije bikabije?
A7:WaNers ya GaN-kuri-SiC nibyiza kubidukikije bikabije bitewe nubushyuhe bwinshi bwumuriro, gukoresha ingufu nyinshi, hamwe nubushobozi bwiza bwo gukwirakwiza ubushyuhe. Iyi wafer ikora neza mubushyuhe bwo hejuru, imbaraga nyinshi, hamwe ninshuro nyinshi zikunze kugaragara mubirere, kurinda, no gukoresha inganda.
Umwanzuro
Customerized GaN-on-SiC Epitaxial Wafers ihuza imitungo igezweho ya GaN na SiC kugirango itange imikorere isumba izindi mumashanyarazi menshi kandi menshi. Hamwe nuburyo bwinshi bwa SiC substrate hamwe nibishobora guhindurwa epitaxial layer, iyi wafer nibyiza mubikorwa bisaba gukora neza, gucunga neza ubushyuhe, no kwizerwa. Haba kubikoresho bya elegitoroniki, sisitemu ya RF, cyangwa porogaramu zo kwirwanaho, wafers yacu ya GaN-kuri-SiC itanga imikorere nubworoherane ukeneye.
Igishushanyo kirambuye
