Udupira twa GaN-on-SiC Epitaxial Wafers twakozwe ku giti cyazo (100mm, 150mm) – Amahitamo menshi ya SiC Substrate (4H-N, HPSI, 4H/6H-P)

Ibisobanuro bigufi:

Udupira twacu twa GaN-on-SiC Epitaxial Wafers twakozwe ku giti cyatwo dutanga imikorere myiza cyane mu gukoresha ingufu nyinshi kandi zikunze gukoreshwa mu buryo bworoshye binyuze mu guhuza imiterere idasanzwe ya Gallium Nitride (GaN) hamwe n'ubushobozi bukomeye bwo gutwara ubushyuhe n'imbaraga za mekanike.Karubide ya Silicone (SiC). Iboneka mu ngano ya wafer ya 100mm na 150mm, izi wafer zubatswe ku buryo butandukanye bwa SiC substrate, harimo ubwoko bwa 4H-N, HPSI, na 4H/6H-P, zakozwe kugira ngo zihuze n'ibisabwa byihariye ku bikoresho by'ikoranabuhanga bikoresha ingufu, amplifiers za RF, n'ibindi bikoresho bya semiconductor bigezweho. Hamwe n'ibikoresho bya epitaxial bishobora guhindurwa hamwe n'ibikoresho byihariye bya SiC, wafer zacu zakozwe kugira ngo zikore neza cyane, zicunge neza ubushyuhe, kandi zikoreshwe mu buryo bwizewe mu nganda.

Ohereza imeri kuri twe

Ibiranga

●Ubunini bw'urwego rwa Epitaxial: Bishobora guhindurwa kuva1.0 µmkuri3.5 µm, byakozwe neza kugira ngo bikore neza kandi bikoreshe imbaraga nyinshi.

●Amahitamo ya SiC Substrate: Iboneka hamwe n'ibintu bitandukanye bya SiC, birimo:

4H-N: 4H-SiC ifite azote nziza cyane ikoreshwa mu gukoresha ingufu nyinshi kandi ikoresha inshuro nyinshi.
HPSI: SiC ifite ubuziranenge buhanitse bwo gukingira umuriro ku bikoresho bisaba kwitandukanya n'amashanyarazi.
4H/6H-P: Ivanze ya 4H na 6H-SiC kugira ngo habeho uburinganire mu mikorere myiza no kwizerwa.

●Ingano za Wafer: Iboneka muri100mmna150mmuburebure bw'ibipimo kugira ngo ibikoresho birusheho guhindurwa no gushyirwa hamwe.

●Umuvuduko mwinshi w'amashanyarazi: GaN kuri ikoranabuhanga rya SiC itanga ingufu nyinshi zo kwangirika, bigatuma habaho imikorere myiza mu bikorwa bifite ingufu nyinshi.

●Ubushyuhe bwinshi butuma umuntu atwara umuvuduko mwinshi: Uburyo SiC ikoresha ubushyuhe (hafi 490 W/m·K) bitanga uburyo bwiza bwo gukwirakwiza ubushyuhe mu bikorwa bikoresha ingufu nyinshi.

Ibisobanuro bya tekiniki

Igipimo	Agaciro
Ingano ya Wafer	100mm, 150mm
Ubunini bw'urwego rwa Epitaxial	1.0 µm – 3.5 µm (ishobora guhindurwa)
Ubwoko bw'ibice bya SiC	4H-N, HPSI, 4H/6H-P
Ubushobozi bwo gutwara ubushyuhe bwa SiC	490 W/m·K
Ubushobozi bwo kwirinda SiC	4H-N: 10^6 Ω·cm,HPSI: Irinda ubushyuhe,4H/6H-P: Ibivanze 4H/6H
Ubunini bw'urwego rwa GaN	1.0 µm – 2.0 µm
Ubwinshi bw'imodoka ya GaN	10^18 cm^-3 kugeza 10^19 cm^-3 (ishobora guhindurwa)
Ubwiza bw'ubuso bw'umugati	Ubukana bwa RMS: < 1 nm
Ubucucike bw'aho umuntu atuye	< 1 x 10^6 cm^-2
Umuheto wa Wafer	< 50 µm
Ubuso bw'umugati	< 5 µm
Ubushyuhe ntarengwa bwo gukora	400°C (ibisanzwe ku bikoresho bya GaN-on-SiC)

Porogaramu

●Ikoranabuhanga rikoresha ingufu:Udupira twa GaN-on-SiC dutanga umusaruro mwiza kandi tugakwirakwiza ubushyuhe, bigatuma tuba ingirakamaro ku byuma bitanga ingufu, ibikoresho bihindura ingufu, n'insinga zihindura ingufu zikoreshwa mu modoka zikoresha amashanyarazi, sisitemu z'ingufu zishobora kuvugururwa, n'imashini z'inganda.
●Amakuru y'ingufu za RF:Uruvange rwa GaN na SiC ni rwiza cyane kuri porogaramu za RF zikoresha imbaraga nyinshi nko mu itumanaho, itumanaho rya satelite, na sisitemu za radar.
●Ikiresi n'Ubwugarizi:Izi wafer zikwiriye ikoranabuhanga ryo mu kirere no mu kurinda rikenera ikoranabuhanga rigezweho ry’amashanyarazi n’itumanaho rishobora gukora mu bihe bikomeye.
● Porogaramu z'imodoka:Ni byiza cyane ku buryo bw'amashanyarazi bukora neza mu modoka zikoresha amashanyarazi (EVs), imodoka zivanze (HEVs), n'aho zishyurira, bigatuma habaho guhindura no kugenzura neza ingufu z'amashanyarazi.
●Sisitemu za gisirikare na Radar:Udupira twa GaN-on-SiC dukoreshwa muri sisitemu za radar kubera imikorere yatwo yo hejuru, ubushobozi bwo gukoresha ingufu, ndetse n'imikorere y'ubushyuhe mu bidukikije bisaba imbaraga nyinshi.
●Imikoreshereze ya Microwave na Millimeter-Wave:Ku bijyanye na sisitemu z'itumanaho zo mu gihe kizaza, harimo na 5G, GaN-on-SiC itanga imikorere myiza mu mikoroonde ifite imbaraga nyinshi na millimetero-wave.

Ibibazo n'Ibisubizo

Q1: Ni izihe nyungu zo gukoresha SiC nk'umuti wa GaN?

A1:Silicon Carbide (SiC) itanga ubushobozi bwo gutwara ubushyuhe bwinshi, ingufu nyinshi zo kwangirika, n'imbaraga za mekanike ugereranije n'ibikoresho bisanzwe nka silicon. Ibi bituma GaN-on-SiC wafers ziba nziza cyane mu gukoresha ingufu nyinshi, inshuro nyinshi, n'ubushyuhe bwinshi. Substrate ya SiC ifasha mu gukuraho ubushyuhe buturuka ku bikoresho bya GaN, binongera ubwizerwe n'imikorere.

Q2: Ese ubugari bw'urwego rwa epitaxial bushobora guhindurwa kugira ngo bukoreshwe mu buryo bwihariye?

A2:Yego, ubugari bw'urwego rwa epitaxial bushobora guhindurwa mu buryo bungana naKuva kuri 1.0 µm kugeza kuri 3.5 µm, bitewe n'imbaraga n'inshuro zisabwa na porogaramu yawe. Dushobora guhindura ubugari bw'urwego rwa GaN kugira ngo twongere imikorere ku bikoresho byihariye nka amplifier z'amashanyarazi, sisitemu za RF, cyangwa circuits zifite frequency yo hejuru.

Q3: Ni irihe tandukaniro riri hagati ya substrates za 4H-N, HPSI, na 4H/6H-P SiC?

A3:

4H-N: 4H-SiC ikoreshwa muri azote ikunze gukoreshwa mu bikorwa bikoresha ikoranabuhanga rihanitse kandi risaba imikorere myiza.
HPSI: High-Purity Semi-Insulating SiC itanga amashanyarazi ajyanye n'aho akorera, ikaba ari nziza cyane ku bikoresho bisaba amashanyarazi make cyane.
4H/6H-P: Uruvange rwa 4H na 6H-SiC ruhuza imikorere, rutanga uruhurirane rw'imikorere myiza n'ubudahangarwa, rukwiriye gukoreshwa mu buryo butandukanye bw'ikoranabuhanga rikoresha ingufu.

Q4: Ese izi wafer za GaN-on-SiC zikwiriye gukoreshwa mu ngufu nyinshi nk'imodoka zikoresha amashanyarazi n'ingufu zishobora kuvugururwa?

A4:Yego, utubati twa GaN-on-SiC tubereye cyane gukoreshwa mu ngufu nyinshi nko mu modoka zikoresha amashanyarazi, ingufu zisubira, no mu nganda. Ubushobozi bwo kwangirika cyane kw'amashanyarazi, ubwiyongere bw'ubushyuhe, n'ubushobozi bwo gukoresha ingufu z'ibikoresho bya GaN-on-SiC bituma bikora neza mu guhindura no kugenzura ingufu cyane.

Q5: Ni ubuhe bunini busanzwe bwo kwangirika kw'izi wafers?

A5:Ubucucike bw'izi wafer za GaN-on-SiC busanzwe ni< 1 x 10^6 cm^-2, bitanga umusaruro mwiza wo gukura mu gice cyo hejuru cy’inyuma, bigabanya inenge no kunoza imikorere n’ubwizigirwa bw’igikoresho.

Q6: Ese nshobora gusaba ingano runaka ya wafer cyangwa ubwoko bwa substrate ya SiC?

A6:Yego, dutanga ingano za wafer zihariye (100mm na 150mm) n'ubwoko bwa substrate ya SiC (4H-N, HPSI, 4H/6H-P) kugira ngo duhuze n'ibyo ukeneye byihariye. Twandikire kugira ngo ubone andi mahitamo yo guhindura no kuganira ku byo ukeneye.

Q7: Ni gute wafer za GaN-on-SiC zikora mu bidukikije bikomeye?

A7:Udupira twa GaN-on-SiC ni ingirakamaro cyane mu bidukikije bikabije bitewe n’ubushyuhe bwinshi, ubushobozi bwo gufata neza, n’ubushobozi bwo gukwirakwiza ubushyuhe. Udupira twa GaN-on-SiC dukora neza mu bihe by’ubushyuhe bwinshi, imbaraga nyinshi, n’inshuro nyinshi bikunze kugaragara mu kirere, mu kurinda no mu nganda.

Umwanzuro

Wafer zacu za GaN-on-SiC Epitaxial Wafers zikozwe ku giti cyazo zihuza imiterere ihanitse ya GaN na SiC kugira ngo zitange imikorere myiza mu gukoresha ingufu nyinshi no gukoresha inshuro nyinshi. Hamwe n'uburyo bwinshi bwa SiC substrate hamwe n'uburyo bwa epitaxial bushobora guhindurwa, izi wafers ni nziza ku nganda zisaba imikorere myiza, gucunga ubushyuhe, no kwizerwa. Byaba ari ibikoresho by'ikoranabuhanga, sisitemu za RF, cyangwa porogaramu zo kurinda, wafers zacu za GaN-on-SiC zitanga imikorere n'ubushobozi ukeneye.