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Ingano ya Dia150mm 4H-N 6inch SiC substrate ikorwa n'urwego rw'ibishushanyo mbonera

Ishusho ya Dia150mm 4H-N 6inch SiC substrate ikorwa n'urwego rw'ibishushanyo mbonera
  • Ingano ya Dia150mm 4H-N 6inch SiC substrate ikorwa n'urwego rw'ibishushanyo mbonera
  • Ingano ya Dia150mm 4H-N 6inch SiC substrate ikorwa n'urwego rw'ibishushanyo mbonera
  • Ingano ya Dia150mm 4H-N 6inch SiC substrate ikorwa n'urwego rw'ibishushanyo mbonera

Ibisobanuro bigufi:

Karubide ya Silicon (SiC) ni imvange y’itsinda rya IV-IV, imvange yonyine ikomeye ihamye mu itsinda rya IV ry’imbonerahamwe y’ibintu, kandi ni ibikoresho by’ingenzi bya semiconductor. Ifite imiterere myiza y’ubushyuhe, mekanike, shimi n’amashanyarazi, ntabwo ari ugukora ibikoresho by’ikoranabuhanga bishyuha cyane, bifite imbaraga nyinshi, kimwe mu bikoresho byiza cyane, ahubwo ishobora no gukoreshwa nk’ibikoresho bya substrate bishingiye kuri diode z’ubururu zisohora urumuri rwa GaN. Ubu ikoreshwa kuri substrate ya karubide ya silicon ikoresheje 4H, ubwoko bw’amashanyarazi bugabanyijemo ubwoko bubiri bukingira ubushyuhe (budafite doped, doped) na N-type.


Ibiranga

Ibintu by'ingenzi bigize wafer za mosfet za silikoni carbide za santimetero 6 ni ibi bikurikira;.

Ihangana n'amashanyarazi menshi: Carbide ya silicon ifite ingufu nyinshi z'amashanyarazi, bityo wafers za silicon carbide mosfet za santimetero 6 zifite ubushobozi bwo guhangana n'amashanyarazi menshi, zikwiriye gukoreshwa mu bihe by'amashanyarazi menshi.

Ubucucike bw'umuyoboro w'amashanyarazi bwinshi: Carbide ya silicon ifite uburyo bwinshi bwo kugenda bwa electron, bigatuma wafers za silicon carbide mosfet za santimetero 6 zigira ubucucike bw'umuyoboro w'amashanyarazi bwinshi kugira ngo zihangane n'umuyoboro w'amashanyarazi mwinshi.

Ikoreshwa ry’umuvuduko mwinshi: Carbide ya silicon ifite ubushobozi bwo kugenda buhoro, bigatuma wafers za silicon carbide mosfet za santimetero 6 zigira ubushobozi bwo gukora bwinshi, zikwiriye gukoreshwa mu bihe by’ikoreshwa ry’umuvuduko mwinshi.

Ubushyuhe buhamye: Carbide ya silicon ifite ubushobozi bwo gutwara ubushyuhe bwinshi, bigatuma wafers za silicon carbide mosfet za santimetero 6 zikomeza kugira imikorere myiza mu bushyuhe bwinshi.

Wafer za mosfet za silikoni za santimetero 6 zikoreshwa cyane mu bice bikurikira: ibikoresho by'ikoranabuhanga bikoresha ingufu, harimo transformers, rectifiers, inverters, amplifiers, nibindi, nka inverters zikoresha imirasire y'izuba, charger nshya y'ibinyabiziga, ubwikorezi bwa gari ya moshi, compressor y'umwuka yihuta mu cyuma gikoresha lisansi, converter ya DC-DC (DCDC), moteri y'ibinyabiziga bikoresha amashanyarazi hamwe n'uburyo bwo gukoresha ikoranabuhanga mu bijyanye n'amakuru n'ahandi hantu hakoreshwa byinshi.

Dushobora gutanga substrate ya 4H-N ya 6inch SiC, ubwoko butandukanye bwa wafers za substrate. Dushobora kandi gutegura uburyo bwo guhindura ibintu ukurikije ibyo ukeneye. Murakaza neza!

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