GaAs imbaraga nyinshi epitaxial wafer substrate gallium arsenide wafer power laser wavelength 905nm yo kuvura laser

Ibisobanuro bigufi:

Urupapuro rwa GaAs laser epitaxial yerekana ibikoresho bya firime imwe yoroheje yakozwe na tekinoroji yo gukura ya epitaxial kuri sisitemu ya gallium arsenide (GaAs), ikoreshwa mugukora ibikoresho bya optoelectronic nka lazeri.
GaAs 905 yamashanyarazi na GaAs chip-power epitaxy chip ni laseri ishingiye kubikoresho bya gallium arsenide (GaAs) kandi bikoreshwa cyane mubice byinshi. MOCVD epitaxial wafer ikoreshwa cyane cyane mumashanyarazi menshi ya diode. InGaAs quantum neza ikoreshwa nkigikorwa gikora. Epitaxial wafer isesengurwa na PL, XRD, ECV nubundi buryo bwo gupima. GaAs 905 yamashanyarazi na GaAs chip-epitaxy chip-epitaxy ikoreshwa cyane mubuvuzi, inganda, ubushakashatsi bwa siyansi nizindi nzego bitewe nubushobozi bwazo bwinshi, umusaruro mwinshi hamwe nubushyuhe bwiza, kandi bifite agaciro gakomeye kumasoko hamwe nubushobozi bwa tekiniki.


Ibicuruzwa birambuye

Ibicuruzwa

Ibyingenzi byingenzi biranga urupapuro rwa epitaxial ya GaAs harimo:

1.Ibikoresho bya elegitoronike bigendanwa: Gallium arsenide ifite moteri ya elegitoronike, ituma GaAs laser epitaxial wafers ifite porogaramu nziza mubikoresho byihuta cyane nibikoresho byihuta bya elegitoroniki.
2.Dirct bandgap transition luminescence: Nkibikoresho bitaziguye, gallium arsenide irashobora guhindura ingufu zamashanyarazi imbaraga zumucyo mubikoresho bya optoelectronic, bigatuma biba byiza gukora lazeri.
3.Uburebure: GaAs 905 laseri isanzwe ikora kuri 905 nm, bigatuma ikoreshwa mubisabwa byinshi, harimo na biomedicine.
4.Ubushobozi buhanitse: hamwe nuburyo bwiza bwo guhindura amashanyarazi, burashobora guhindura ingufu z'amashanyarazi mubisohoka bya laser.
5.Ibisohoka byimbaraga nyinshi: Irashobora kugera kumasoko menshi kandi ikwiranye nibisabwa bisaba isoko yumucyo ukomeye.
6.Imikorere myiza yubushyuhe: Ibikoresho bya GaAs bifite ubushyuhe bwiza, bifasha kugabanya ubushyuhe bwimikorere ya laser no kuzamura ituze.
7.Ihinduka ryinshi: Imbaraga zisohoka zirashobora guhinduka muguhindura ibiyobora kugirango uhuze nibisabwa bitandukanye.

Porogaramu nyamukuru ya GaAs laser epitaxial tablets irimo:

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2. Inganda zikoreshwa mu nganda: Mu rwego rwinganda, urupapuro rwa GaAs laser epitaxial impapuro zirashobora gukoreshwa muburyo bwa laser, ibimenyetso bya laser nibindi bikorwa.

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Gutegura urupapuro rwa GaAs laser epitaxial ahanini biterwa nubuhanga bwo gukura bwa epitaxial, harimo ibyuma biva mu bimera biva mu kirere (MOCVD), epitaxial beam molekile (MBE) nubundi buryo. Ubu buhanga bushobora kugenzura neza ubunini, ibihimbano hamwe na kristu yuburyo bwa epitaxial layer kugirango ubone urupapuro rwiza rwa GaAs laser epitaxial.

X. Ibicuruzwa bya XKH bikozwe hamwe nibikoresho bigezweho bya MOCVD kugirango bikore neza kandi byizewe. Kubijyanye na logistique, XKH ifite imiyoboro minini yimiyoboro mpuzamahanga, ishobora gukora neza umubare wibyateganijwe, kandi igatanga serivisi zongerewe agaciro nko gutunganya no kugabana. Uburyo bwiza bwo gutanga amakuru butanga kugihe kandi byujuje ibyifuzo byabakiriya mugihe cyiza no gutanga. Abakiriya barashobora kubona ubufasha bwa tekiniki bwuzuye na nyuma yo kugurisha nyuma yo kuhagera kugirango barebe ko ibicuruzwa byakoreshejwe neza.

Igishushanyo kirambuye

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