GaAs laser epitaxial wafer 4 inch 6 inch VCSEL vertical cavity surface emission laser wavelength 940nm ihuriro rimwe

Ibisobanuro bigufi:

Umukiriya yasobanuye igishushanyo cya Gigabit Ethernet laser igizwe nuburinganire buringaniye bwa santimetero 6 za wafers 850 / 940nm hagati ya optique yumurongo wa oxyde ntarengwa cyangwa proton-yatewe na VCSEL yamakuru yamakuru ahuza itumanaho, imbeba ya laser imashanyarazi nibiranga optique yubushyuhe bukabije. Ihuriro VCSEL-940 Ihuriro rimwe ni vertical cavity surface isohora lazeri (VCSEL) hamwe nuburebure bwumuriro usanzwe hafi ya nanometero 940. Izo laseri mubisanzwe zigizwe na kwant imwe imwe neza kandi irashobora gutanga urumuri rwiza. Uburebure bwumurambararo wa 940 nanometero butuma muri infrarafarike, ibereye mubikorwa bitandukanye. Ugereranije nubundi bwoko bwa laseri, VCsels ifite amashanyarazi menshi ya optique. Porogaramu ya VCSEL ni ntoya kandi yoroshye guhuza. Ikoreshwa ryinshi rya VCSEL-940 ryatumye rigira uruhare runini mubuhanga bugezweho.

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Ibicuruzwa birambuye

Ibicuruzwa

Ibintu nyamukuru biranga GaAs laser epitaxial urupapuro rurimo

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2. Uburebure bwumuraba: Uburebure bwa 940 nm butuma buringaniza bwa infragre, bikwiranye nibikorwa bitandukanye.
3. Gukora neza cyane: Ugereranije nubundi bwoko bwa laseri, VCSEL ifite imikorere ihanitse ya electro-optique.
4. Ubwitonzi: Porogaramu ya VCSEL ni nto kandi yoroshye guhuza.

5. Inzira ntoya kandi ikora neza: Lazeri ya heterostructure yashyinguwe yerekana ubucucike buke cyane (urugero 4mA / cm²) hamwe nubushobozi bwo hejuru butandukanye (urugero 36%), hamwe nimbaraga zisohoka zirenga 15mW.
6. Uburyo bwa Waveguide itajegajega: Laser yashyinguwe ya heterostructure ifite ibyiza byo guhagarara neza kumurongo bitewe nuburyo bwayo bworoheje bwayoboye uburyo bwa waveguide hamwe nubugari bugufi bugaragara (hafi 2μm).
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9. Birakwiriye kubikorwa bitandukanye: urupapuro rwa GAAS rushingiye kuri laser diode epitaxial urupapuro rukoreshwa cyane mugutumanaho kwa fibre optique, gukoresha inganda, infragre na fotodetekeri nizindi nzego.

Inzira nyamukuru yo gukoresha inzira ya GaAs laser epitaxial urupapuro rurimo

2. Inganda zikoreshwa mu nganda: Impapuro za GaAs laser epitaxial nayo ifite akamaro gakomeye mubikorwa byinganda, nko gutunganya lazeri, gupima no kumva.

4. Porogaramu ya Rf: Ibikoresho bya GaA bifite ibyiza byingenzi mumurima wa RF kandi bikoreshwa mugukora ibikoresho bya RF bikora neza.

5. Lazeri ya Quantum: Ibikoresho bya GAAS bishingiye kuri kwant ikoreshwa cyane mu itumanaho, mu buvuzi no mu bya gisirikare, cyane cyane mu gice cy’itumanaho rya optique 1.31µm.

6. Passive Q ihindura: Imashini ya GaAs ikoreshwa mugukoresha diode-pompe ikomeye ya lazeri ya reta hamwe na pasiporo Q ya pasiporo, ikwiranye no gutunganya mikoro, gutondeka no kubaga mikorobe.

Izi porogaramu zerekana ubushobozi bwa GaAs laser epitaxial wafers murwego runini rwibikorwa bya tekinoroji.

XKH itanga GaAs epitaxial wafer ifite imiterere nubunini butandukanye bujyanye nibisabwa nabakiriya, bikubiyemo ibintu byinshi bisabwa nka VCSEL / HCSEL, WLAN, sitasiyo ya 4G / 5G, nibindi bicuruzwa bya XKH bikozwe hifashishijwe ibikoresho bigezweho bya MOCVD kugirango bikore neza kandi neza kwiringirwa. Kubijyanye na logistique, dufite imiyoboro minini yimiyoboro mpuzamahanga, irashobora gukora neza umubare wibyateganijwe, kandi igatanga serivisi zongerewe agaciro nko kunanura, gutandukanya, nibindi. ibihe byiza no gutanga. Nyuma yo kuhagera, abakiriya barashobora kubona ubufasha bwa tekiniki bwuzuye na serivisi nyuma yo kugurisha kugirango barebe ko ibicuruzwa byakoreshejwe neza.