Gallium Nitride (GaN) Epitaxial Yakuze kuri Safiro Wafers 4inch 6inch kuri MEMS
Ibyiza bya GaN kuri Wafers ya safi
Eff Ubushobozi buhanitse:Ibikoresho bishingiye kuri GaN bitanga imbaraga zikubye inshuro eshanu kuruta ibikoresho bishingiye kuri silikoni, byongera imikorere mubikorwa bitandukanye bya elegitoroniki, harimo amplification ya RF na optoelectronics.
Band Umuyoboro mugari:Ubugari bwagutse bwa GaN butuma imikorere ikorwa hejuru yubushyuhe bwo hejuru, bigatuma biba byiza cyane-imbaraga nyinshi kandi zikoreshwa cyane.
● Kuramba:Ubushobozi bwa GaN bwo guhangana nuburyo bukabije (ubushyuhe bwinshi nimirasire) butuma imikorere iramba mubidukikije bikaze.
Size Ingano nto:GaN yemerera gukora ibikoresho byinshi byoroheje kandi byoroheje ugereranije nibikoresho gakondo bya semiconductor, byorohereza ibikoresho bya elegitoroniki bito kandi bikomeye.
Ibisobanuro
Gallium Nitride (GaN) igaragara nkigice kimwe cya kabiri cyo guhitamo porogaramu zigezweho zisaba imbaraga nini kandi nziza, nka moderi ya RF-imbere-modules, sisitemu yitumanaho ryihuta, hamwe n’itara rya LED. GaN epitaxial wafers, iyo ikuze kuri substrate ya safiro, itanga uruvange rwumuriro mwinshi mwinshi, voltage yamenetse cyane, hamwe numurongo mugari, ibyo bikaba urufunguzo rwo gukora neza mubikoresho byitumanaho bidafite insinga, radar, na jammers. Iyi wafer iraboneka muri santimetero 4 na santimetero 6, hamwe nubunini bwa GaN butandukanye kugirango bujuje ibisabwa bya tekiniki bitandukanye. Imiterere yihariye ya GaN ituma iba umukandida wambere wigihe kizaza cya electronics power.
Ibipimo byibicuruzwa
Ibiranga ibicuruzwa | Ibisobanuro |
Diameter | 50mm, 100mm, 50.8mm |
Substrate | Safiro |
Ubunini bwa GaN | 0.5 mm - 10 mm |
Ubwoko bwa GaN / Doping | N-ubwoko (P-ubwoko buraboneka ubisabwe) |
Icyerekezo cya GaN | <0001> |
Ubwoko bwa Polishing | Uruhande rumwe rusize (SSP), Uruhande rumwe (DSP) |
Al2O3 Ubunini | 430 mm - 650 mm |
TTV (Gutandukana kwinshi) | ≤ 10 mm |
Umuheto | ≤ 10 mm |
Intambara | ≤ 10 mm |
Ubuso | Ubuso bushobora gukoreshwa> 90% |
Ikibazo
Q1: Ni izihe nyungu zingenzi zo gukoresha GaN hejuru ya semiconductor ishingiye kuri silicon gakondo?
A1. Ibi bituma GaN iba nziza kubububasha bukomeye, inshuro nyinshi zikoreshwa nka modul ya RF, imbaraga zongera imbaraga, na LED. Ubushobozi bwa GaN bwo gukemura ingufu zingana nabwo butuma ibikoresho bito kandi bikora neza ugereranije na silicon ishingiye kubindi.
Q2: GaN kuri wafer ya safi irashobora gukoreshwa muri porogaramu za MEMS (Micro-Electro-Mechanical Systems)?
A2: Nibyo, GaN kuri waferi ya safi irakwiriye kubisabwa na MEMS, cyane cyane aho imbaraga nyinshi, ihindagurika ryubushyuhe, n urusaku ruke. Kuramba kwibikoresho no gukora neza mubidukikije byihuta cyane bituma biba byiza kubikoresho bya MEMS bikoreshwa mubitumanaho bidafite insinga, sensing, na radar sisitemu.
Q3: Ni ubuhe buryo bushoboka bwa GaN mu itumanaho ridafite umugozi?
A3: GaN ikoreshwa cyane muri moderi ya RF imbere-itumanaho ryitumanaho, harimo ibikorwa remezo 5G, sisitemu ya radar, na jammers. Ububasha bwayo bwinshi hamwe nubushyuhe bwumuriro butuma butunganyirizwa imbaraga-nyinshi, ibikoresho-byihuta cyane, bigafasha gukora neza nibintu bito ugereranije nibisubizo bishingiye kuri silikoni.
Q4: Nibihe bihe biganisha hamwe nubunini ntarengwa bwa GaN kuri waferi ya safiro?
A4: Igihe cyambere hamwe numubare muto wateganijwe uratandukanye bitewe nubunini bwa wafer, ubunini bwa GaN, nibisabwa abakiriya. Nyamuneka twandikire kubiciro birambuye no kuboneka ukurikije ibisobanuro byawe.
Q5: Nshobora kubona igipimo cya GaN cyihariye cyangwa urwego rwa doping?
A5: Yego, turatanga uburyo bwihariye bwa GaN nubunini bwa doping kugirango duhuze ibyifuzo byihariye. Nyamuneka utumenyeshe ibyifuzo byawe, kandi tuzatanga igisubizo cyihariye.
Igishushanyo kirambuye



