Gallium Nitride (GaN) Epitaxial yakuriye kuri Safiro Wafers 4cm 6cm kuri MEMS

Gallium Nitride (GaN) Epitaxial yakuriye kuri Wafers za Sapphire 4cm 6cm kuri MEMS Ishusho yagaragaye

Ibisobanuro bigufi:

Gallium Nitride (GaN) kuri wafer za Sapphire itanga imikorere idasanzwe ku bikoresho bikoresha frequency nyinshi n'imbaraga nyinshi, bigatuma iba ibikoresho byiza cyane ku bikoresho bigezweho bya RF (Radio Frequency), amatara ya LED, n'ibindi bikoresho bya semiconductor.GaNImiterere y’amashanyarazi ihebuje, harimo n’icyuho kinini, ituma ikora ku muvuduko mwinshi w’amashanyarazi n’ubushyuhe kurusha ibikoresho bisanzwe bishingiye kuri silikoni. Uko GaN igenda ikoreshwa kurusha silikoni, irimo gutera imbere mu bikoresho by’ikoranabuhanga bisaba ibikoresho byoroshye, bikomeye kandi bikora neza.

Ohereza imeri kuri twe

Ibiranga

Imiterere ya GaN ku mavuta ya Sapphire

●Ikoranabuhanga Rikomeye:Ibikoresho bishingiye kuri GaN bitanga imbaraga zikubye inshuro eshanu ugereranyije n’ibikoresho bishingiye kuri silikoni, bikongera imikorere mu bikorwa bitandukanye by’ikoranabuhanga, harimo no kongera imbaraga za RF na optoelectronics.
●Umugozi munini:Icyuho kinini cya GaN gituma habaho imikorere myiza cyane mu bushyuhe buri hejuru, bigatuma iba nziza cyane mu gukoresha ingufu nyinshi no mu buryo bworoshye.
●Kuramba:Ubushobozi bwa GaN bwo guhangana n'ibihe bikomeye (ubushyuhe bwinshi n'imirasire) butuma imikorere iramba mu bidukikije bikomeye.
●Ingano nto:GaN yemerera gukora ibikoresho bito kandi byoroheje ugereranije n'ibikoresho bisanzwe bya semiconductor, byorohereza ikoranabuhanga rito kandi rikomeye.

Incamake

Gallium Nitride (GaN) iri kugaragara nk'igikoresho cy'ingenzi gikoreshwa mu gukoresha ibikoresho bigezweho bisaba ingufu nyinshi n'ubushobozi buhanitse, nka module za RF front-end, sisitemu z'itumanaho ryihuse, n'amatara ya LED. GaN epitaxial wafers, iyo ihinzwe ku duce twa safiro, itanga uruhurirane rw'ubushyuhe bwinshi, voltage nyinshi yo kwangirika, hamwe n'umuvuduko wagutse, ibyo bikaba ari ingenzi mu gukora neza mu bikoresho by'itumanaho bidafite insinga, radar, na jammers. Izi wafers ziboneka mu bugari bwa santimetero 4 na santimetero 6, zifite ubugari butandukanye bwa GaN kugira ngo zihuze n'ibikenewe bitandukanye bya tekiniki. Imiterere yihariye ya GaN ituma iba umukandida w'ingenzi mu hazaza h'ibikoresho by'ikoranabuhanga bikoresha ingufu.

Ibipimo by'ibicuruzwa

Ibiranga Igicuruzwa	Ibisobanuro
Ingano ya Wafer	50mm, 100mm, 50.8mm
Inzu ntoya	Safiro
Ubunini bw'urwego rwa GaN	0.5 μm - 10 μm
Ubwoko bwa GaN/Gukoresha imiti igabanya ubukana bw'ibiyobyabwenge	Ubwoko bwa N (ubwoko bwa P buboneka iyo ubisabye)
Icyerekezo cya GaN Crystal	<0001>
Ubwoko bwo gusiga	Irangijwe ku ruhande rumwe (SSP), Irangijwe ku mpande ebyiri (DSP)
Ubunini bwa Al2O3	430 μm - 650 μm
TTV (Impinduka y'Ubunini Rusange)	≤ 10 μm
Umuheto	≤ 10 μm
Ifuro	≤ 10 μm
Ubuso bw'ubutaka	Ubuso bushobora gukoreshwa > 90%

Ibibazo n'Ibisubizo

Q1: Ni izihe nyungu z'ingenzi zo gukoresha GaN kuruta semiconductor zisanzwe zishingiye kuri silicon?

A1: GaN itanga ibyiza byinshi bikomeye ugereranyije na silikoni, harimo n'aho ikura cyane, bituma ishobora guhangana n'amashanyarazi menshi kandi igakora neza mu bushyuhe bwinshi. Ibi bituma GaN iba nziza cyane ku bikoresho bifite ingufu nyinshi kandi bikoresha frequency nyinshi nka module za RF, amplifiers z'amashanyarazi, na LED. Ubushobozi bwa GaN bwo guhangana n'ubucucike bw'amashanyarazi bwinshi butuma ibikoresho bito kandi birushaho gukora neza ugereranije n'ibindi bikoresho bishingiye kuri silikoni.

Ikibazo cya 2: Ese GaN kuri wafer za Sapphire ishobora gukoreshwa muri MEMS (Micro-Electro-Mechanical Systems)?

A2Yego, GaN kuri wafer za Sapphire ikwiriye gukoreshwa muri MEMS, cyane cyane aho ingufu nyinshi, ubushyuhe budahindagurika, n'urusaku ruto bisaba. Kuba ibikoresho biramba kandi bikora neza mu bidukikije bifite umurongo munini bituma biba byiza ku bikoresho bya MEMS bikoreshwa mu itumanaho ridafite insinga, mu gusana no mu gupima.

Q3: Ni izihe ngamba GaN ishobora gukoresha mu itumanaho ridafite umugozi?

A3: GaN ikoreshwa cyane muri module za RF front-end mu itumanaho ridafite umugozi, harimo ibikorwa remezo bya 5G, sisitemu za radar, na jammers. Ifite imbaraga nyinshi n'ubushobozi bwo gutwara ubushyuhe bituma iba nziza cyane ku bikoresho bifite ingufu nyinshi kandi bifite umurongo munini, bigatuma habaho imikorere myiza n'ibintu bito bito ugereranije n'ibisubizo bishingiye kuri silicon.

Q4: Ni ibihe bihe byo gutanga umusanzu n'ingano ntarengwa yo gutumiza kuri GaN kuri wafer za Sapphire?

A4: Igihe cyo gutumiza ibicuruzwa n'ingano ntarengwa yo gutumiza biratandukanye bitewe n'ingano ya wafer, ubunini bwa GaN, n'ibyo abakiriya bakeneye byihariye. Twandikire utaziguye kugira ngo ubone ibiciro birambuye n'uko biboneka hashingiwe ku bisobanuro byawe.

Q5: Ese nshobora kubona ingano yihariye y'urwego rwa GaN cyangwa urwego rwa doping?

A5Yego, dutanga uburyo bwo guhindura ingano y'ubugari bwa GaN n'urwego rwa doping kugira ngo bihuze n'ibyo ukeneye mu buryo bwihariye. Tubwire ibisabwa wifuza, maze tuzaguha igisubizo cyihariye.