Gallium Nitride kuri Silicon wafer 4inch 6inch Yerekanwe Si Substrate Icyerekezo, Kurwanya, na N-Ubwoko / P-Amahitamo

Gallium Nitride kuri Silicon wafer 4inch 6inch Yateguwe Si Substrate Icyerekezo, Kurwanya, na N-Ubwoko / P-Amahitamo Yerekana Ishusho

Ibisobanuro bigufi:

Customerized Gallium Nitride kuri Silicon (GaN-on-Si) Wafers yashizweho kugirango ihuze ibyifuzo byiyongera byumuvuduko mwinshi kandi ufite ingufu nyinshi za elegitoroniki. Biboneka muri santimetero 4 na santimetero 6 za wafer, izi wafer zitanga amahitamo yihariye ya Si substrate yerekanwe, irwanya, hamwe na doping (N-ubwoko / P-ubwoko) kugirango ihuze ibyifuzo byihariye. Ikoranabuhanga rya GaN-kuri-Si rihuza ibyiza bya nitride ya gallium (GaN) hamwe na sisitemu ya silicon ihendutse (Si), ituma imicungire myiza yumuriro, ikora neza, kandi byihuta byihuta. Hamwe na bande nini kandi irwanya amashanyarazi make, iyi wafer nibyiza muguhindura ingufu, porogaramu za RF, hamwe na sisitemu yo kohereza amakuru yihuta.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Ibiranga

Band Umuyoboro mugari:GaN (3.4 eV) itanga iterambere ryinshi mumikorere yumurongo mwinshi, imbaraga nyinshi, nubushyuhe bwo hejuru ugereranije na silikoni gakondo, bigatuma iba nziza kubikoresho byamashanyarazi hamwe na amplifier ya RF.
Icyerekezo cya Si Substrate Icyerekezo:Hitamo mubyerekezo bitandukanye bya Si substrate nka <111>, <100>, nibindi kugirango uhuze ibikoresho byihariye bisabwa.
Res Kurwanya Kurwanya:Hitamo hagati yuburyo butandukanye bwo guhangana na Si, kuva igice-cy-insulasiyo kugeza-birwanya-cyane kandi birwanya imbaraga nke kugirango imikorere igerweho.
Type Ubwoko bwa Doping:Biboneka muri N-ubwoko cyangwa P-doping kugirango ihuze ibisabwa nibikoresho byamashanyarazi, transistor ya RF, cyangwa LED.
Vol Umuvuduko mwinshi wo kumeneka:Wafers ya GaN-kuri-Si ifite voltage yamenetse cyane (kugeza 1200V), ibemerera gukora progaramu ya voltage nyinshi.
Speed Guhindura byihuse:GaN ifite moteri ya elegitoronike kandi igahinduka igabanuka kuruta silikoni, bigatuma WaN ya GaN-kuri-Si nziza kumashanyarazi yihuta.
Imikorere yubushyuhe bwongerewe imbaraga:Nubwo ubushyuhe buke bwa silikoni, GaN-on-Si iracyatanga ubushyuhe buhebuje bwumuriro, hamwe nubushyuhe bwiza kuruta ibikoresho bya silikoni gakondo.

Ibisobanuro bya tekiniki

Parameter	Agaciro
Ingano ya Wafer	4-cm, 6-cm
Icyerekezo Cyerekezo	<111>, <100>, gakondo
Si Kurwanya	Kurwanya cyane, Semi-insulation, Kurwanya-bike
Ubwoko bwa Doping	N-Ubwoko, P-Ubwoko
Ubunini bwa GaN	100 nm - 5000 nm (birashoboka)
Inzira ya AlGaN	24% - 28% Al (bisanzwe 10-20 nm)
Umuvuduko w'amashanyarazi	600V - 1200V
Imashini ya elegitoronike	2000 cm² / V · s
Guhindura inshuro	Kugera kuri 18 GHz
Ubuso bwa Wafer	RMS ~ 0,25 nm (AFM)
Urupapuro rwa GaN Kurwanya	437.9 Ω · cm²
Intambara ya Wafer	<25 µm (ntarengwa)
Amashanyarazi	1.3 - 2.1 W / cm · K.

Porogaramu

Amashanyarazi. Kumeneka kwinshi kwinshi na voltage nkeya birwanya imbaraga zoguhindura imbaraga, ndetse no mumashanyarazi menshi.

Itumanaho rya RF na Microwave: Wafers ya GaN-on-Si itanga ubushobozi bwumurongo mwinshi, bigatuma itunganyirizwa ingufu za ingufu za RF, itumanaho rya satelite, sisitemu ya radar, hamwe na tekinoroji ya 5G. Hamwe n'umuvuduko mwinshi wo guhinduranya hamwe nubushobozi bwo gukora kumurongo mwinshi (kugeza18 GHz), Ibikoresho bya GaN bitanga imikorere isumba iyindi porogaramu.

Ibikoresho bya elegitoroniki: GaN-on-Si ikoreshwa muri sisitemu y'amashanyarazi, harimoamashanyarazi mu ndege (OBCs)naGuhindura DC-DC. Ubushobozi bwayo bwo gukora mubushyuhe bwo hejuru no kwihanganira urwego rwinshi rwa voltage bituma bihuza neza nibinyabiziga bikoresha amashanyarazi bisaba guhindura ingufu zikomeye.

LED na Optoelectronics: GaN nibikoresho byo guhitamo LED n'ubururu n'umweru. WaN ya GaN-kuri-Si ikoreshwa mugukora sisitemu yo kumurika LED ikora neza, itanga imikorere myiza mumuri, kwerekana ikoranabuhanga, no gutumanaho neza.

Ikibazo

Q1: Ni izihe nyungu za GaN kurenza silikoni mu bikoresho bya elegitoroniki?

A1:GaN ifite amugari mugari (3.4 eV)kuruta silikoni (1.1 eV), ituma ishobora guhangana n’umuvuduko mwinshi nubushyuhe. Uyu mutungo utuma GaN ikora neza-imbaraga zikoreshwa cyane, kugabanya gutakaza ingufu no kongera imikorere ya sisitemu. GaN itanga kandi umuvuduko wo guhinduranya byihuse, nibyingenzi kubikoresho byihuta cyane nka amplifier ya RF hamwe na power power.

Q2: Nshobora guhitamo icyerekezo cya Si substrate yo gusaba?

A2:Yego, turatangaIcyerekezo cya Si substrate icyerekezonka<111>, <100>, hamwe nibindi byerekezo ukurikije ibikoresho byawe bisabwa. Icyerekezo cya Si substrate igira uruhare runini mugukora ibikoresho, harimo ibiranga amashanyarazi, imyitwarire yubushyuhe, hamwe nubukanishi.

Q3: Ni izihe nyungu zo gukoresha GaN-kuri-Si wafer ya porogaramu nyinshi?

A3:GaN-on-Si wafers itanga ikirengaGuhindura umuvuduko, gushoboza gukora byihuse kumurongo mwinshi ugereranije na silicon. Ibi bituma babaho nezaRFnamicrowavePorogaramu, Nka-Umuyoboro mwinshiibikoresho by'ingufunkaHEMTs(Transistors yo hejuru ya Electron Mobility) naAmashanyarazi ya RF. GaN yo hejuru ya electron igenda nayo itera igihombo cyo hasi no kunoza imikorere.

Q4: Ni ubuhe buryo bwa doping buboneka kuri waN ya GaN-kuri-Si?

A4:Turatanga byombiN-ubwokonaUbwoko bwa P.amahitamo ya doping, asanzwe akoreshwa muburyo butandukanye bwibikoresho bya semiconductor.Ubwoko bwa dopingni byiza kuriimbaraga za transistornaAmashanyarazi ya RF, mu giheUbwoko bwa dopingikoreshwa kenshi mubikoresho bya optoelectronic nka LED.

Umwanzuro

Customerized Gallium Nitride kuri Silicon (GaN-on-Si) Wafers itanga igisubizo cyiza kumurongo mwinshi, imbaraga nyinshi, hamwe nubushyuhe bwo hejuru. Hamwe na sisitemu ya Si substrate yerekanwe, irwanya, hamwe na N-ubwoko bwa P-doping, izi waferi zateguwe kugirango zihuze ibikenewe byinganda kuva kuri electronics electronique na sisitemu yimodoka kugeza itumanaho rya RF hamwe nikoranabuhanga rya LED. Gukoresha imitungo isumba izindi ya GaN hamwe nubunini bwa silicon, izi wafer zitanga imikorere yongerewe imbaraga, imikorere, hamwe nigihe kizaza-cyibikoresho bizaza.