GaN-on-Diamond Wafers 4inch 6inch Ubunini bwa epi yose (micron) 0.6 ~ 2.5 cyangwa yahinduwe kugira ngo ikoreshwe mu buryo bwihuta
Imitungo
Ingano y'umugati:
Iboneka mu bunini bwa santimetero 4 na santimetero 6 kugira ngo ihuzwe mu buryo butandukanye mu nganda zitandukanye zo gukora ibikoresho bya semiconductor.
Amahitamo yo guhindura ingano ya wafer arahari bitewe n'ibyo abakiriya bakeneye.
Ubunini bw'urwego rwa Epitaxial:
Ingano: 0.6 µm kugeza 2.5 µm, hamwe n'amahitamo y'ubugari bwihariye bushingiye ku byo ikoreshwa.
Urukuta rwa epitaxial rwagenewe gukura neza kwa kristale ya GaN, rufite ubugari bwiza bwo kuringaniza imbaraga, uburyo bwo gusubiza inshuro nyinshi, no gucunga ubushyuhe.
Ubushobozi bwo gutwara ubushyuhe:
Agace ka diyama gatanga ubushyuhe bwinshi cyane bwa 2000-2200 W/m·K, bigatuma ubushyuhe bukwirakwira neza mu bikoresho bifite ingufu nyinshi.
Imiterere y'ibikoresho bya GaN:
Umupaka mugari: Urupapuro rwa GaN rufite umupaka mugari (~3.4 eV), wemerera gukora ahantu habi, umuriro mwinshi, n'ubushyuhe bwinshi.
Uburyo bwo kugenda kwa Electron: Uburyo bwo kugenda kwa electron nyinshi (hafi cm² 2000/V·s), bigatuma habaho kwihuta mu guhinduranya no kwiyongera kw'imikorere.
Umuvuduko mwinshi w'amashanyarazi: Umuvuduko wa GaN wo kwangirika uri hejuru cyane ugereranije n'ibikoresho bisanzwe bya semiconductor, bigatuma ikoreshwa mu gukoresha ingufu nyinshi.
Imikorere y'amashanyarazi:
Ubucucike bw'ingufu nyinshi: GaN-on-Diamond wafers zitanga ingufu nyinshi ariko zigakomeza kuba nto, zikwiriye amplifier z'ingufu na sisitemu za RF.
Igihombo Gike: Uruvange rw'imikorere ya GaN n'uburyo diyama ikoresha ubushyuhe bigabanya igihombo cy'ingufu mu gihe cy'ikoreshwa.
Ubwiza bw'ubuso:
Gukura kwa Epitaxial mu buryo bwiza: Urukuta rwa GaN ruhingwa ku gice cya diyama, bigatuma habaho ubucucike buke, ubwiza bwa kristale buri hejuru, kandi imikorere myiza y'igikoresho.
Ubumwe:
Ubunini n'Uburyo Bisa: Uruhande rwa GaN na diyama byombi bigumana uburyo bumwe, bikaba ari ingenzi cyane kugira ngo igikoresho gikore neza kandi kibe cyizerwa.
Ubudahangarwa bw'ibinyabutabire:
GaN na diyama byombi bitanga ubushobozi budasanzwe bwo gupima ubuziranenge bw'ibinyabutabire, bigatuma izi wafer zikora neza mu bidukikije bikomeye.
Porogaramu
Amplifiers za RF Power:
Wafer za GaN-on-Diamond ni nziza cyane ku byuma bitanga ingufu za RF mu itumanaho, sisitemu za radar, no mu itumanaho rya satelite, bitanga imikorere myiza kandi byizewe ku murongo wo hejuru (urugero, kuva kuri 2 GHz kugeza kuri 20 GHz no hejuru yayo).
Itumanaho rya Microwave:
Izi wafers zirakora neza muri sisitemu y'itumanaho rya mikoroonde, aho ingufu nyinshi zisohoka kandi ikimenyetso gito cyangirika ari ingenzi cyane.
Ikoranabuhanga rya Radar n'Ikoranabuhanga ryo Gutahura:
Udupira twa GaN-on-Diamond dukoreshwa cyane muri sisitemu za radar, dutanga imikorere myiza mu bikorwa bikoresha inshuro nyinshi n'ingufu nyinshi, cyane cyane mu rwego rwa gisirikare, imodoka, n'iby'indege.
Sisitemu za Satelite:
Muri sisitemu z'itumanaho rya satelite, izi wafers zemeza ko amplifiers ziramba kandi zikora neza, zishobora gukora mu bihe bikomeye by'ibidukikije.
Ikoranabuhanga rikoresha imbaraga nyinshi:
Ubushobozi bwo gucunga ubushyuhe bwa GaN-on-Diamond butuma zikoreshwa mu bikoresho by'ikoranabuhanga bifite ingufu nyinshi, nka power converters, inverters, na solid-state relay.
Sisitemu zo gucunga ubushyuhe:
Bitewe n’ubushyuhe bwinshi bwa diyama, izi wafer zishobora gukoreshwa mu bikorwa bisaba gucunga ubushyuhe neza, nka sisitemu za LED zifite imbaraga nyinshi na laser.
Ibibazo n'Ibisubizo kuri GaN-on-Diamond Wafers
Q1: Ni iyihe nyungu yo gukoresha GaN-on-Diamond wafers mu bikorwa bikunze gukoreshwa cyane?
A1:Udupira twa GaN-on-Diamond duhuza uburyo bwo kugenda cyane kwa electron n'icyuho kinini cya GaN hamwe n'uburyo butangaje bwo gutwara ubushyuhe bwa diyama. Ibi bituma ibikoresho bifite frequency yo hejuru bikora ku rwego rwo hejuru rw'ingufu mu gihe bicunga ubushyuhe neza, bigatuma habaho imikorere myiza kandi yizewe ugereranije n'ibikoresho bisanzwe.
Ikibazo cya 2: Ese wafer za GaN-on-Diamond zishobora guhindurwa hakurikijwe ingufu n'inshuro runaka zisabwa?
A2:Yego, wafer za GaN-on-Diamond zitanga amahitamo ashobora guhindurwa, harimo ubugari bw'urwego rwa epitaxial (0.6 µm kugeza 2.5 µm), ingano ya wafer (4-inch, 6-inch), n'ibindi bipimo bishingiye ku bikenewe byihariye mu ikoreshwa, bitanga uburyo bworoshye bwo gukoresha ingufu nyinshi n'inshuro nyinshi.
Q3: Ni izihe nyungu z'ingenzi za diyama nk'umusemburo wa GaN?
A3:Ubushyuhe bukabije bwa Diamond (kugeza kuri 2200 W/m·K) bufasha mu gusohora neza ubushyuhe buturuka ku bikoresho bya GaN bifite ingufu nyinshi. Ubu bushobozi bwo gucunga ubushyuhe butuma ibikoresho bya GaN-on-Diamond bikora ku bucucike bw'ingufu nyinshi n'umuvuduko, bigatuma imikorere y'ibikoresho irushaho kuba myiza kandi igakomeza igihe kirekire.
Q4: Ese uduce twa GaN-on-Diamond twakoreshejwe mu isanzure cyangwa mu kirere?
A4:Yego, GaN-on-Diamond wafers zikwiriye gukoreshwa mu kirere no mu kirere bitewe n'uko zizewe cyane, ubushobozi bwo gucunga ubushyuhe, n'imikorere yazo mu bihe bikomeye, nko mu mirasire myinshi, ihindagurika ry'ubushyuhe, no gukora inshuro nyinshi.
Q5: Ni iyihe minsi y'ubuzima bw'ibikoresho byakozwe muri GaN-on-Diamond wafers?
A5:Uruvange rw'ubudahangarwa bwa GaN n'ubushobozi budasanzwe bwo gukwirakwiza ubushyuhe bwa diyama bituma ibikoresho bimara igihe kirekire. Ibikoresho bya GaN-on-Diamond byagenewe gukora ahantu habi kandi hafite ingufu nyinshi kandi bigatakaza ubukana bukabije uko igihe kigenda gihita.
Q6: Ni gute ubwiyongere bw'ubushyuhe bwa diyama bugira ingaruka ku mikorere rusange ya wafers za GaN-on-Diamond?
A6:Ubushyuhe bwinshi bwa diyama bufite uruhare runini mu kongera imikorere ya wafer za GaN-on-Diamond binyuze mu gukuraho ubushyuhe buturuka mu bikorwa bifite ingufu nyinshi. Ibi bituma ibikoresho bya GaN bigumana imikorere myiza, bikagabanya ubushyuhe, kandi birinda gushyuha cyane, ibi bikaba ari ikibazo gikunze kugaragara mu bikoresho bisanzwe bya semiconductor.
Q7: Ni izihe porogaramu zisanzwe aho GaN-on-Diamond wafers zirusha izindi semiconductor materials?
A7:Udupira twa GaN-on-Diamond turusha utundi dukoresho mu bikorwa bisaba gukoresha ingufu nyinshi, gukoresha inshuro nyinshi, no gucunga neza ubushyuhe. Ibi birimo amplifiers za RF, sisitemu za radar, itumanaho rya mikoroonde, itumanaho rya satelite, n'ibindi bikoresho by'ikoranabuhanga bikoresha ingufu nyinshi.
Umwanzuro
Wafer za GaN-on-Diamond zitanga igisubizo cyihariye ku bikorwa bikoresha imbaraga nyinshi n'ingufu nyinshi, zihuza imikorere myiza ya GaN n'imiterere idasanzwe y'ubushyuhe bwa diyama. Zifite imiterere ihinduka, zagenewe guhaza ibyifuzo by'inganda zisaba gutanga ingufu neza, gucunga ubushyuhe, no gukora neza, zigatuma zikomeza kuba iz'ukuri kandi zikaramba mu bidukikije bigoye.
Ishusho irambuye
