HPSI SiC wafer dia: uburebure bwa 3inch: 350um ± 25 µm kuri Electronics

HPSI SiC wafer dia: Ubugari bwa 3inch: 350um ± 25 µm kuri Power Electronics Ishusho Yerekanwe

Ibisobanuro bigufi:

HPSI (High-Purity Silicon Carbide) SiC wafer ifite umurambararo wa santimetero 3 n'ubugari bwa 350 µm ± 25 µm yateguwe byumwihariko kubikoresho bya elegitoroniki bisaba ingufu zidasanzwe. Iyi wafer ya SiC itanga ubushyuhe buhebuje bwumuriro, imbaraga zo kumeneka cyane, hamwe nubushyuhe bukabije bwubushyuhe bwo gukora, bigatuma ihitamo neza kubikenerwa byiyongera kubikoresho bikoresha ingufu za elegitoroniki zikoresha ingufu kandi zikomeye. WaC ya SiC irakwiriye cyane cyane kumashanyarazi mwinshi, mwinshi-mwinshi, hamwe na progaramu-yumurongo mwinshi, aho insimburangingo ya silicon gakondo idashoboye kubahiriza ibyo ikora.
Wafer yacu ya HPSI SiC, yahimbwe ikoresheje tekinoroji igezweho iyobora inganda, iraboneka mubyiciro byinshi, buri cyashizweho kugirango cyuzuze ibisabwa byinganda. Wafer yerekana ubunyangamugayo buhebuje, imiterere y’amashanyarazi, hamwe n’ubuziranenge bw’ubutaka, yemeza ko ishobora gutanga imikorere yizewe mu gusaba, harimo amashanyarazi y’amashanyarazi, ibinyabiziga by’amashanyarazi (EV), sisitemu y’ingufu zishobora kuvugururwa, no guhindura ingufu z’inganda.

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Ibicuruzwa birambuye

Ibicuruzwa

Gusaba

Wafer ya HPSI SiC ikoreshwa muburyo butandukanye bwa electronics power, harimo:

Amashanyarazi Amashanyarazi:Wafers ya SiC isanzwe ikoreshwa mugukora ingufu za diode, transistors (MOSFETs, IGBTs), na thyristors. Izi semiconductor zikoreshwa cyane mubikorwa byo guhindura amashanyarazi bisaba gukora neza kandi byizewe, nko mumashanyarazi atwara inganda, ibikoresho byamashanyarazi, hamwe na inverter kuri sisitemu yingufu zishobora kubaho.
Ibinyabiziga by'amashanyarazi (EV):Muri powertrain yimodoka yamashanyarazi, ibikoresho byamashanyarazi bishingiye kuri SiC bitanga umuvuduko wihuse, gukoresha ingufu nyinshi, no kugabanya igihombo cyumuriro. Ibice bya SiC nibyiza mubisabwa muri sisitemu yo gucunga bateri (BMS), ibikorwa remezo byo kwishyuza, hamwe na charger zo mu ndege (OBCs), aho kugabanya uburemere no gukoresha ingufu zihindura ingufu ni ngombwa.

Sisitemu y'ingufu zishobora kuvugururwa:Wafers ya SiC igenda ikoreshwa cyane muri inverteri yizuba, amashanyarazi yumuyaga, hamwe na sisitemu yo kubika ingufu, aho bikenewe cyane kandi bikomeye. Ibice bishingiye kuri SiC bifasha ingufu nyinshi kandi byongera imikorere muribi bikorwa, bizamura imikorere muri rusange.

Inganda zikoreshwa mu nganda:Mubikorwa byinganda zikora cyane, nka moteri ya moteri, robotike, hamwe n’amashanyarazi manini manini, ikoreshwa rya waferi ya SiC ituma imikorere inoze mu rwego rwo gukora neza, kwiringirwa, no gucunga amashyuza. Ibikoresho bya SiC birashobora gukoresha inshuro nyinshi zo guhinduranya hamwe nubushyuhe bwo hejuru, bigatuma bikenerwa kubidukikije.

Itumanaho hamwe n’ibigo byamakuru:SiC ikoreshwa mubikoresho byamashanyarazi kubikoresho byitumanaho hamwe nibigo byamakuru, aho kwizerwa gukomeye no guhindura ingufu neza ari ngombwa. Ibikoresho by'amashanyarazi bishingiye kuri SiC bifasha gukora neza murwego ruto, bisobanura kugabanya ingufu zikoreshwa no gukonjesha neza mubikorwa remezo binini.

Umuvuduko mwinshi wo kugabanuka, imbaraga nke-zirwanya, hamwe nubushuhe buhebuje bwumuriro wa waferi ya SiC bituma uba substrate nziza kuriyi porogaramu zateye imbere, bigafasha iterambere ryibisekuruza bizaza bikoresha ingufu za elegitoroniki.

Ibyiza

Umutungo	Agaciro
Diameter	Santimetero 3 (76.2 mm)
Umubyimba wa Wafer	350 µm ± 25 µm
Icyerekezo cya Wafer	<0001> kuri axe ± 0.5 °
Ubucucike bwa Micropipe (MPD)	Cm 1 cm⁻²
Kurwanya amashanyarazi	≥ 1E7 Ω · cm
Dopant	Undoped
Icyerekezo Cyibanze	{11-20} ± 5.0 °
Uburebure bwibanze	32,5 mm ± 3.0 mm
Uburebure bwa kabiri	18.0 mm ± 2,2 mm
Icyerekezo cya kabiri cya Flat	Si hejuru: 90 ° CW kuva kumurongo wambere ± 5.0 °
Guhezwa	Mm 3
LTV / TTV / Umuheto / Intambara	3 µm / 10 µm / ± 30 µm / 40 µm
Ubuso	C-isura: Ihanaguwe, Si-isura: CMP
Kumeneka (kugenzurwa numucyo mwinshi)	Nta na kimwe
Isahani ya Hex (igenzurwa numucyo mwinshi)	Nta na kimwe
Agace ka polytype (kugenzurwa numucyo mwinshi)	Agace kegeranye 5%
Igishushanyo (kigenzurwa n'umucyo mwinshi)	 5 gushushanya, uburebure bwuzuye ≤ 150 mm
Gukata Impande	Nta numwe wemerewe ≥ 0,5 mm z'ubugari n'uburebure
Kwanduza Ubuso (kugenzurwa numucyo mwinshi)	Nta na kimwe

Inyungu z'ingenzi

Ubushyuhe bwo hejuru cyane:Wafers ya SiC izwiho ubushobozi budasanzwe bwo gukwirakwiza ubushyuhe, butuma ibikoresho byamashanyarazi bikora neza kandi bigakoresha imigezi ihanitse idashyushye. Iyi mikorere ningirakamaro muri electronics power aho gucunga ubushyuhe ari ikibazo gikomeye.
Umuvuduko mwinshi wo kumeneka:Umugozi mugari wa SiC utuma ibikoresho byihanganira urwego rwinshi rwa voltage, bigatuma biba byiza mumashanyarazi menshi nka gride yamashanyarazi, ibinyabiziga byamashanyarazi, hamwe nimashini zinganda.
Ubushobozi buhanitse:Ihuriro ryumuvuduko mwinshi hamwe nubushobozi buke bwo kurwanya-ibikoresho bivamo ibikoresho bitakaza ingufu nke, kuzamura imikorere rusange yo guhindura ingufu no kugabanya ibikenewe muri sisitemu yo gukonjesha.
Kwizerwa mubidukikije bikaze:SiC ifite ubushobozi bwo gukora ku bushyuhe bwinshi (kugeza kuri 600 ° C), bigatuma bukoreshwa neza mubidukikije byangiza ibikoresho gakondo bishingiye kuri silikoni.
Kuzigama ingufu:Ibikoresho by'amashanyarazi bya SiC biteza imbere uburyo bwo guhindura ingufu, bifite akamaro kanini mukugabanya gukoresha ingufu, cyane cyane muri sisitemu nini nko guhindura amashanyarazi mu nganda, ibinyabiziga by’amashanyarazi, n’ibikorwa remezo by’ingufu zishobora kuvugururwa.