Indimu Antimonide (InSb) wafers N ubwoko bwa P ubwoko bwa Epi bwiteguye budafunze Te doped cyangwa Ge doped 2inch 3inch 4inch ubugari bwa Indium Antimonide (InSb) wafer
Ibiranga
Amahitamo ya Doping:
1.Kudafungura:Iyi wafers idafite ibikoresho byose bya doping, bituma biba byiza mubikorwa byihariye nko gukura kwa epitaxial.
2.Doped (N-Ubwoko):Doping ya Tellurium (Te) ikoreshwa muburyo bwo gukora waferi yo mu bwoko bwa N, nibyiza kubisabwa nka disiketi ya infragre na electronique yihuta.
3.Gukoporora (P-Ubwoko):Doping ya Germanium (Ge) ikoreshwa mugukora waferi yo mu bwoko bwa P, itanga umwobo muremure wimikorere ya semiconductor igezweho.
Ingano Ingano:
1.Biboneka muri santimetero 2, santimetero 3, na santimetero 4. Iyi wafer ijyanye nibyifuzo bitandukanye byikoranabuhanga, kuva mubushakashatsi niterambere kugeza mubikorwa binini.
2.Kwihanganira diametre neza byemeza ko bihoraho mubice, hamwe na diameter ya 50.8 ± 0.3mm (kuri waferi ya santimetero 2) na 76.2 ± 0.3mm (kuri waferi ya santimetero 3).
Kugenzura umubyimba:
1.Wafers iraboneka hamwe nubunini bwa 500 ± 5μm kugirango ikore neza mubikorwa bitandukanye.
2.Ibipimo by'inyongera nka TTV (Igipimo Cyuzuye Cyuzuye), BOW, na Warp bigenzurwa neza kugirango habeho uburinganire n'ubwuzuzanye.
Ubwiza bw'ubuso:
1.Wafers ije ifite ubuso bunoze / bwuzuye kugirango imikorere myiza ya optique n'amashanyarazi.
2.Iyi sura ninziza yo gukura epitaxial, itanga urufatiro rwiza rwo kurushaho gutunganya mubikoresho bikora neza.
Epi-Yiteguye:
1.Ibikoresho bya InSb ni epi-byiteguye, bivuze ko byabanje kuvurwa kubikorwa byo kubika epitaxial. Ibi bituma bakora neza mubikorwa bya semiconductor aho ibice bya epitaxial bigomba guhingwa hejuru ya wafer.
Porogaramu
1.Ibikoresho bitagira ingano:InSb wafers ikoreshwa mubushakashatsi bwa infragre (IR), cyane cyane hagati yumurambararo wo hagati (MWIR). Iyi wafer ningirakamaro mubyerekezo byijoro, amashusho yubushyuhe, hamwe na infragre ya spekitroscopi.
2.Ibikoresho byihuta bya elegitoroniki:Bitewe numuvuduko mwinshi wa elegitoronike, wafers ya InSb ikoreshwa mubikoresho byihuta bya elegitoronike nka tristoriste yihuta cyane, ibikoresho bya kwantum, hamwe na transistor nini ya elegitoronike (HEMTs).
3.Ibikoresho byiza bya Quantum:Gufunga kwagutse hamwe na electroni nziza cyane ituma InSb wafers ikwiriye gukoreshwa mubikoresho byiza bya kwant. Ibi bikoresho nibice byingenzi muri laseri, disikete, nubundi buryo bwa optoelectronic.
4.Ibikoresho byandika:InSb nayo irimo gushakishwa mubikorwa bya spintronic, aho electron spin ikoreshwa mugutunganya amakuru. Ibikoresho byo kuzenguruka-kuzenguruka bituma biba byiza kuri ibyo bikoresho bikora neza.
5.Terahertz (THz) Imirasire ikoreshwa:Ibikoresho bishingiye kuri InSb bikoreshwa mugukoresha imirasire ya THz, harimo ubushakashatsi bwa siyanse, amashusho, hamwe nibiranga ibintu. Bashoboza tekinoroji igezweho nka THz spectroscopy na sisitemu yo gufata amashusho ya THz.
6.Ibikoresho bya mashanyarazi:Imiterere yihariye ya InSb ituma iba ibikoresho bikurura amashanyarazi, aho ishobora gukoreshwa muguhindura ubushyuhe mumashanyarazi neza, cyane cyane mubikorwa byiza nka tekinoroji yo mu kirere cyangwa kubyara ingufu mubidukikije bikabije.
Ibipimo byibicuruzwa
| Parameter | 2-cm | 3-cm | 4-inim |
| Diameter | 50.8 ± 0.3mm | 76.2 ± 0.3mm | - |
| Umubyimba | 500 ± 5μm | 650 ± 5 mm | - |
| Ubuso | Byahinduwe neza | Byahinduwe neza | Byahinduwe neza |
| Ubwoko bwa Doping | Kudakingurwa, Te-gukoporora (N), Ge-gukoporora (P) | Kudakingurwa, Te-gukoporora (N), Ge-gukoporora (P) | Kudakingurwa, Te-gukoporora (N), Ge-gukoporora (P) |
| Icyerekezo | (100) | (100) | (100) |
| Amapaki | Ingaragu | Ingaragu | Ingaragu |
| Epi-Yiteguye | Yego | Yego | Yego |
Ibipimo by'amashanyarazi kuri Te Doped (N-Ubwoko):
- Kugenda: 2000-5000 cm² / V · s
- Kurwanya: (1-1000) Ω · cm
- EPD (Ubucucike Bwuzuye): ≤2000 inenge / cm²
Ibipimo by'amashanyarazi kuri Ge Dope (P-Ubwoko):
- Kugenda: 4000-8000 cm² / V · s
- Kurwanya: (0.5-5) Ω · cm
- EPD (Ubucucike Bwuzuye): ≤2000 inenge / cm²
Umwanzuro
Indimu Antimonide (InSb) ni ibikoresho byingenzi muburyo butandukanye bwo gukora cyane murwego rwa elegitoroniki, optoelectronics, hamwe na tekinoroji ya infragre. Hamwe na moteri nziza ya elegitoronike, guhuza spin-orbit guhuza, hamwe nuburyo butandukanye bwa doping (Te for N-type, Ge for P-type), Wafers ya InSb nibyiza gukoreshwa mubikoresho nka disiketi ya infragre, transistor yihuta cyane, ibikoresho byiza bya spintronic.
Wafers iraboneka mubunini butandukanye (2-santimetero, 3-santimetero, na 4-santimetero), hamwe no kugenzura neza umubyimba hamwe na epi-yiteguye hejuru, byemeza ko byujuje ibisabwa bikomeye byo guhimba semiconductor igezweho. Iyi wafers irakenewe mubisabwa mubice nka IR gutahura, ibikoresho bya elegitoroniki yihuta, hamwe nimirasire ya THz, bigafasha ikoranabuhanga rigezweho mubushakashatsi, inganda, no kwirwanaho.
Igishushanyo kirambuye
