InSb wafer ifite uburebure bwa santimetero 2 na santimetero 3, icyerekezo cya Ntype P 111 100 ku bikoresho bipima infrared

InSb wafer ifite uburebure bwa santimetero 2 na santimetero 3, ifite icyerekezo cya Ntype P 111 100 kuri Infrared Detectors. Ishusho yagaragaye

Ibisobanuro bigufi:

Wafer za Indium Antimonide (InSb) ni ibikoresho by'ingenzi bikoreshwa mu ikoranabuhanga ryo gutahura infrared bitewe n'aho ziherereye hato kandi zigenda cyane. Izi wafer ziboneka mu bugari bwa santimetero 2 na santimetero 3, ziboneka mu bwoko bwa undoped, N-type, na P-type. Wafer zakozwe zifite icyerekezo cya 100 na 111, zitanga uburyo bworoshye bwo gutahura infrared no gukoresha semiconductor. Kuba InSb wafers zifite ubushobozi bwo kumva no kumva urusaku ruto bituma ziba nziza mu bikoresho bipima infrared (MWIR), sisitemu zo gufata amashusho ya infrared, n'izindi porogaramu za optoelectronic zisaba ubushobozi bwo gukora neza no gukora neza.

Ohereza imeri kuri twe

Ibiranga

Amahitamo yo gukoresha imiti igabanya ubukana bw'ibiyobyabwenge:
1.Yakuweho:Izi wafers nta kintu na kimwe kizikoresha mu gupima uburozi kandi zikoreshwa cyane cyane mu bikorwa byihariye nko gukura mu gice cya epitaxial, aho wafer ikora nk'ikintu cyuzuye.
2. Ubwoko bwa N (Te Doped):Gukoresha Tellurium (Te) doping bikoreshwa mu gukora wafer zo mu bwoko bwa N, bigatanga uburyo bwo kugenda bwa electron nyinshi kandi bigatuma zikoreshwa mu gupima infrared, electronics zihuta cyane, n'izindi porogaramu zisaba electron gutembera neza.
3. Ubwoko bwa P (Ge Doped):Gukoresha imiti igabanya ubushyuhe ya Germanium (Ge) bikoreshwa mu gukora utubumbe twa P-type wafers, bitanga uburyo bwo kugenda mu mwobo muremure kandi bigatanga imikorere myiza ku bikoresho bipima infrared na photodetectors.

Amahitamo y'ingano:
1. Udupira twa wafer tuboneka mu bugari bwa santimetero 2 na santimetero 3. Ibi bituma duhura n'ibikoresho bitandukanye byo gukora semiconductor.
2. Wafer ya santimetero 2 ifite umurambararo wa mm 50.8±0.3, mu gihe wafer ya santimetero 3 ifite umurambararo wa mm 76.2±0.3.

Icyerekezo:
1. Uduce twa wafer turaboneka dufite icyerekezo cya 100 na 111. Icyerekezo cya 100 ni cyiza cyane ku bikoresho by'ikoranabuhanga byihuta cyane na infrared detectors, mu gihe icyerekezo cya 111 gikoreshwa kenshi ku bikoresho bisaba imiterere yihariye y'amashanyarazi cyangwa optique.

Ubwiza bw'ubuso:
1. Izi wafer ziza zifite ubuso busekuye/bushushanyijeho kugira ngo zibe nziza cyane, bigatuma habaho imikorere myiza mu bikorwa bisaba imiterere nyayo y'urumuri cyangwa amashanyarazi.
2. Gutegura ubuso bituma ubucucike buke, bigatuma izi wafer ziba nziza cyane mu gukoresha infrared aho imikorere ihamye ari ingenzi cyane.

Biteguye Epi:
1. Izi wafer ziba ziteguye gukoreshwa mu buryo bwa epitaxial, bityo zikaba zikwiriye gukoreshwa mu gukura kwa epitaxial aho izindi ntera z'ibikoresho zizashyirwa kuri wafer kugira ngo hakorwe ibikoresho bya semiconductor cyangwa optoelectronic.

Porogaramu

1. Ibikoresho byo gupima imirasire y'urumuri:InSb wafers zikoreshwa cyane mu gukora ibikoresho bipima infrared, cyane cyane mu ntera ya infrared yo hagati mu burebure (MWIR). Ni ingenzi mu buryo bwo kureba nijoro, gufata amashusho y'ubushyuhe, no mu bikorwa bya gisirikare.
2. Sisitemu zo Gufata Amashusho ya Infrared:Kuba InSb wafers ifite ubushobozi bwo kugaragaza neza amashusho ya infrared bituma habaho amashusho nyayo mu nzego zitandukanye, harimo umutekano, igenzura, n'ubushakashatsi bwa siyansi.
3. Ikoranabuhanga ryihuse cyane:Bitewe n'uko zigenda cyane, izi wafer zikoreshwa mu bikoresho by'ikoranabuhanga bigezweho nka transistors zihuta cyane n'ibikoresho bya optoelectronic.
4. Ibikoresho by'amariba ya Quantum:InSb wafers ni nziza cyane mu gukoresha quantum well muri lasers, detectors, n'izindi optoelectronic systems.

Ibipimo by'ibicuruzwa

Igipimo	Santimetero 2	Santimetero 3
Ingano	50.8±0.3mm	76.2±0.3mm
Ubunini	500±5μm	650±5μm
Ubuso	Yasenyewe/Yashushanyijwe	Yasenyewe/Yashushanyijwe
Ubwoko bwa doping	Idakoreshejwe, Te-doped (N), Ge-doped (P)	Idakoreshejwe, Te-doped (N), Ge-doped (P)
Icyerekezo	100, 111	100, 111
Pake	Ingaragu	Ingaragu
Iteguye Epi	Yego	Yego

Ibipimo by'amashanyarazi bya Te Doped (Ubwoko bwa N):

Gutembera: 2000-5000 cm²/V·s
Ubushobozi bwo kwirinda: (1-1000) Ω·cm
EPD (Ubucucike bw'inenge): ≤2000 inenge/cm²

Ibipimo by'amashanyarazi bya Ge Doped (Ubwoko bwa P):

Gutembera: 4000-8000 cm²/V·s
Ubushobozi bwo kwirinda: (0.5-5) Ω·cm

EPD (Ubucucike bw'inenge): ≤2000 inenge/cm²

Ibibazo n'Ibisubizo (Ibibazo Bikunze Kubazwa)

Q1: Ni ubuhe bwoko bwiza bwo gukoresha doping mu gupima infrared?

A1:Te-doped (ubwoko bwa N)Ubusanzwe, wafers ni amahitamo meza yo gukoresha mu gupima infrared, kuko itanga electron nyinshi kandi ikora neza mu gupima infrared yo hagati mu burebure bwa wavelength (MWIR) na sisitemu zo gufata amashusho.

Q2: Ese nshobora gukoresha izi wafers mu gukoresha ikoranabuhanga ryihuse?

A2: Yego, uduce twa InSb twa wafers, cyane cyane utwo dufiteGukoresha imiti igabanya ubukana bw'ubwoko bwa Nn'icyerekezo 100, zikwiriye cyane ibikoresho by'ikoranabuhanga byihuta nka transistors, ibikoresho bya quantum, n'ibice bya optoelectronic bitewe nuko electron zigenda cyane.

Q3: Ni irihe tandukaniro riri hagati y’icyerekezo cya 100 na 111 cya wafers za InSb?

A3: Itsinda100icyerekezo gikunze gukoreshwa ku bikoresho bisaba imikorere y'ikoranabuhanga yihuta cyane, mu gihe111icyerekezo gikunze gukoreshwa ku bikorwa byihariye bisaba imiterere itandukanye y'amashanyarazi cyangwa iy'urumuri, harimo ibikoresho bimwe na bimwe bya optoelectronic na sensors.

Q4: Ni akahe kamaro k'uburyo bwa Epi-Ready kuri wafers za InSb?

A4: ItsindaIteguye Epibivuze ko wafer yavuwe mbere kugira ngo ikoreshwe mu buryo bwo gushyiramo epitaxial. Ibi ni ingenzi ku bikorwa bisaba gukuraho ibindi bice by'ibikoresho hejuru ya wafer, nko mu gukora ibikoresho bya semiconductor cyangwa optoelectronic bigezweho.

Q5: Ni izihe ngero zisanzwe za InSb wafers mu ikoranabuhanga rya infrared zikoreshwa?

A5: InSb wafers zikoreshwa cyane cyane mu gupima infrared, gufata amashusho y'ubushyuhe, sisitemu yo kureba nijoro, n'ubundi buryo bwo kumenya infrared. Uburyo bwo kumva ibintu bwinshi n'urusaku ruto bituma ziba nziza cyane kuriinfrarouge yo hagati mu burebure bw'umuraba (MWIR)ibikoresho byo gutahura.

Q6: Ni gute ubunini bw'ifi ya wafer bugira ingaruka ku mikorere yayo?

A6: Ubunini bwa wafer bugira uruhare runini mu kudahinduka kwa mekanike no mu miterere yayo y'amashanyarazi. Wafer zoroshye zikunze gukoreshwa mu bikorwa byoroheje aho hakenewe kugenzura neza imiterere y'ibikoresho, mu gihe wafer zoroshye zitanga kuramba kurushaho ku bikorwa bimwe na bimwe by'inganda.

Q7: Nigute nahitamo ingano ikwiye ya wafer yo gukoresha mu gusiga?

A7: Ingano ikwiye ya wafer iterwa n'igikoresho cyangwa sisitemu runaka yakozwe. Wafer nto (santimetero 2) zikunze gukoreshwa mu bushakashatsi no mu bikorwa bito, mu gihe wafer nini (santimetero 3) zikoreshwa mu gukora ibintu byinshi n'ibikoresho binini bisaba ibikoresho byinshi.

Umwanzuro

InSb wafers muriSantimetero 2naSantimetero 3ingano, hamwebyakuweho, Ubwoko bwa N, naUbwoko bwa Pimpinduka, bifite akamaro kanini mu gukoresha ibikoresho bya semiconductor na optoelectronic, cyane cyane mu buryo bwo gutahura infrared.100na111icyerekezo gitanga uburyo bworoshye bwo gukoresha mu ikoranabuhanga, kuva ku bikoresho by'ikoranabuhanga byihuta kugeza kuri sisitemu zo gufata amashusho ya infrared. Kubera ko zigenda neza cyane, urusaku ruto, kandi zifite ubwiza buhagije ku buso bwazo, izi wafer ni nziza cyane kuibikoresho bipima infrared bifite uburebure bw'umuraba wo hagatin'izindi porogaramu zifite imikorere yo hejuru.