InSb wafer 2inch 3inch idafunze Ntype P yerekana icyerekezo 111 100 kubushakashatsi bwa Infrared

Ibisobanuro bigufi:

Wafers ya Indium Antimonide (InSb) nibikoresho byingenzi bikoreshwa muburyo bwa tekinoroji yo gutahura bitewe nubunini bwabyo kandi bigenda cyane kuri electron. Biboneka muri santimetero 2 na santimetero 3, iyi wafer itangwa muburyo budafunze, N-bwoko, na P-butandukanye. Wafers yahimbwe hamwe nicyerekezo cya 100 na 111, bitanga uburyo bworoshye bwo gutahura infragre zitandukanye hamwe na progaramu ya semiconductor. Ubukangurambaga bukabije hamwe n’urusaku ruke rwa wafers ya InSb bituma biba byiza gukoreshwa muri disiketi yo hagati y’umurambararo wo hagati (MWIR), sisitemu yo gufata amashusho ya infragre, hamwe nubundi buryo bwa optoelectronic busaba ubushobozi bwuzuye kandi bukora neza.

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Ibicuruzwa birambuye

Ibicuruzwa

Ibiranga

Amahitamo ya Doping:
1.Kudafungura:Izi wafer ntizishobora gukoreshwa na doping zose kandi zikoreshwa cyane cyane mubikorwa byihariye nko gukura kwa epitaxial, aho wafer ikora nka substrate yera.
2.N-Ubwoko (Te Doped):Doping ya Tellurium (Te) ikoreshwa mugukora waferi yo mu bwoko bwa N, itanga umuvuduko mwinshi wa elegitoronike kandi ikanabikwirakwiza ibyuma bifata ibyuma bitagira ingano, ibikoresho bya elegitoroniki yihuta, nibindi bikorwa bisaba gutembera neza kwa electron.
3.P-Ubwoko (Ge Doped):Doping ya Germanium (Ge) ikoreshwa mugukora waferi yo mu bwoko bwa P, itanga umuvuduko mwinshi kandi igatanga imikorere myiza kuri sensor ya infragre na fotodetekeri.

Ingano Ingano:
1.Wafers iraboneka muri santimetero 2 na santimetero 3. Ibi byemeza guhuza hamwe nuburyo butandukanye bwo guhimba hamwe nibikoresho.
2.Icyerekezo cya santimetero 2 gifite 50.8 ± 0.3mm ya diametre, mugihe wafer ya santimetero 3 ifite 76.2 ± 0.3mm.

Icyerekezo:
1.Wafers iraboneka ifite icyerekezo cya 100 na 111. Icyerekezo 100 nicyiza kuri electronics yihuta cyane hamwe na disiketi ya infragre, mugihe icyerekezo 111 gikoreshwa cyane mubikoresho bisaba amashanyarazi yihariye cyangwa optique.

Ubwiza bw'ubuso:
1.Iyi wafer ije ifite isuku / yubatswe hejuru yubuziranenge buhebuje, ituma imikorere myiza mubisabwa bisaba neza neza amashanyarazi cyangwa amashanyarazi.
2.Itegurwa ryubuso ryemeza ubucucike buke, bigatuma iyi wafer iba nziza kubikorwa bya infragre yo gutahura aho imikorere ihamye.

Epi-Yiteguye:
1.Iyi waferi iriteguye-epi, ituma bikenerwa mubisabwa bijyanye no gukura kwa epitaxial aho ibindi bikoresho bizashyirwa kuri wafer kugirango habeho semiconductor cyangwa ibikoresho bya optoelectronic.

Porogaramu

1.Ibikoresho bitagira ingano:InSb wafers ikoreshwa cyane muguhimba ibyuma bifata infragre, cyane cyane hagati yumurambararo wo hagati (MWIR). Nibyingenzi kuri sisitemu yo kureba nijoro, amashusho yumuriro, hamwe nibikorwa bya gisirikare.
Sisitemu yo Kwerekana Amashusho:Ubwiyongere bukabije bwa wafers ya InSb butuma amashusho yerekana neza infrarafarike mubice bitandukanye, harimo umutekano, kugenzura, nubushakashatsi bwa siyanse.
3.Ibikoresho byihuta bya elegitoroniki:Bitewe numuvuduko mwinshi wa electron, izi wafer zikoreshwa mubikoresho bya elegitoroniki bigezweho nka transistor yihuta cyane nibikoresho bya optoelectronic.
4.Ibikoresho byiza bya Quantum:InSb wafers nibyiza kuri kwantumiza neza ikoreshwa muri laseri, detector, hamwe na sisitemu ya optoelectronic.

Ibipimo byibicuruzwa

Parameter	2-cm	3-cm
Diameter	50.8 ± 0.3mm	76.2 ± 0.3mm
Umubyimba	500 ± 5μm	650 ± 5 mm
Ubuso	Byahinduwe neza	Byahinduwe neza
Ubwoko bwa Doping	Kudakingurwa, Te-gukoporora (N), Ge-gukoporora (P)	Kudakingurwa, Te-gukoporora (N), Ge-gukoporora (P)
Icyerekezo	100, 111	100, 111
Amapaki	Ingaragu	Ingaragu
Epi-Yiteguye	Yego	Yego

Ibipimo by'amashanyarazi kuri Te Doped (N-Ubwoko):

Kugenda: 2000-5000 cm² / V · s
Kurwanya: (1-1000) Ω · cm
EPD (Ubucucike Bwuzuye): ≤2000 inenge / cm²

Ibipimo by'amashanyarazi kuri Ge Dope (P-Ubwoko):

Kugenda: 4000-8000 cm² / V · s
Kurwanya: (0.5-5) Ω · cm

EPD (Ubucucike Bwuzuye): ≤2000 inenge / cm²

Ikibazo (Ibibazo bikunze kubazwa)

Q1: Ni ubuhe bwoko bwiza bwa doping bwa progaramu ya infragre?

A1:Te-dope (N-ubwoko)wafers mubisanzwe ni amahitamo meza ya progaramu ya infrarafurike, kuko itanga moteri ya elegitoronike kandi ikora neza muri disikete yo hagati ya infragre (MWIR) hamwe na sisitemu yo gufata amashusho.

Q2: Nshobora gukoresha iyi wafer kubikoresho byihuse bya elegitoroniki?

A2: Yego, InSb wafers, cyane cyane izifiteUbwoko bwa dopingnaIcyerekezo 100, bikwiranye na elegitoroniki yihuta cyane nka transistor, ibikoresho bya kwant, nibikoresho bya optoelectronic bitewe na electroni nyinshi.

Q3: Ni irihe tandukaniro riri hagati yicyerekezo 100 na 111 kuri wafers ya InSb?

A3 :.100Icyerekezo gikunze gukoreshwa kubikoresho bisaba umuvuduko wihuse wa elegitoronike, mugihe i111Icyerekezo gikoreshwa muburyo bwihariye busaba amashanyarazi atandukanye cyangwa optique, harimo ibikoresho bimwe na bimwe bya optoelectronic na sensor.

Q4: Ni ubuhe butumwa bukubiye muri Epi-Yiteguye kuri wafers ya InSb?

A4 :.Epi-Yiteguyeibiranga bivuze ko wafer yabanje kuvurwa kubikorwa byo kubika epitaxial. Ibi nibyingenzi mubisabwa bisaba gukura kwinyongera yibikoresho hejuru ya wafer, nko mubikorwa bya semiconductor cyangwa ibikoresho bya optoelectronic.

Q5: Ni ubuhe buryo busanzwe bukoreshwa muri InSb wafers mu rwego rw'ikoranabuhanga rya infragre?

A5: Infer ya InSb ikoreshwa cyane cyane mugushakisha infragre, kwerekana amashusho yumuriro, sisitemu yo kureba nijoro, hamwe nubundi buryo bwa tekinoroji yo kumva. Ibyiyumvo byabo byinshi hamwe n urusaku ruto bituma bakora nezahagati yumurambararo wo hagati (MWIR)imashini.

Q6: Ubunini bwa wafer bugira izihe ngaruka ku mikorere yabwo?

A6: Ubunini bwa wafer bugira uruhare runini mubikorwa bya tekinike no kuranga amashanyarazi. Wafer yoroheje ikoreshwa mubisobanuro byoroshye aho bisabwa kugenzura neza ibintu bifatika, mugihe waferi nini itanga uburebure burambye kubikorwa bimwe na bimwe byinganda.

Q7: Nigute nahitamo ingano ya wafer ikwiye kubyo nsaba?

A7: Ingano ya wafer ikwiye biterwa nigikoresho cyangwa sisitemu yihariye. Wafer ntoya (2-santimetero) ikoreshwa mubushakashatsi hamwe nubushakashatsi buto, mugihe waferi nini (3-santimetero) isanzwe ikoreshwa mubikorwa byinshi hamwe nibikoresho binini bisaba ibikoresho byinshi.

Umwanzuro

InSb wafers in2-cmna3-cmingano, hamweidafunguye, N-ubwoko, naUbwoko bwa P.gutandukana, bifite agaciro kanini muri semiconductor hamwe na optoelectronic progaramu, cyane cyane muri sisitemu yo gutahura. Uwiteka100na111Icyerekezo gitanga ibintu byoroshye muburyo bukenewe mu ikoranabuhanga, kuva kuri elegitoroniki yihuta cyane kugeza kuri sisitemu yo gufata amashusho. Hamwe nimikorere idasanzwe ya elegitoronike, urusaku ruke, hamwe nubuziranenge bwubuso, iyi wafer nibyiza kuriHagati yumurambararo wo hagatihamwe nubundi buryo bukoreshwa cyane.