LiNbO₃ Wafers 2inch-8inch Ubunini 0.1 ~ 0.5mm TTV 3µm Custom

LiNbO₃ Wafers 2inch-8inch Ubunini 0.1 ~ 0.5mm TTV 3µm Igishusho cyihariye

Ibisobanuro bigufi:

LiNbO₃ Wafers yerekana igipimo cya zahabu muri fotonike ihuriweho hamwe na acoustics yuzuye, itanga imikorere ntagereranywa muri sisitemu ya optoelectronic. Nkumushinga wambere, twateje imbere ubuhanga bwo gukora utwo dusimba dukoresheje tekinoroji yo gutwara ibinyabiziga bigezweho, tugera ku nganda ziyobora inganda za kristaline zifite ubucucike buri munsi ya 50 / cm².

Ubushobozi bwa XKH butanga uburebure kuva kuri 75mm kugeza kuri 150mm, hamwe no kugenzura neza icyerekezo (X / Y / Z-gukata ± 0.3 °) hamwe na doping yihariye harimo nibintu bidasanzwe-isi. Ihuriro ridasanzwe ryimitungo muri LiNbO₃ Wafers - harimo na coefficient ya r₃₃ idasanzwe (32 ± 2 pm / V) hamwe no gukorera mu mucyo kuva hafi ya UV kugeza hagati ya IR - bituma iba ingenzi kumasekuruza azaza ya fotonike hamwe nibikoresho bya acoustic byihuta cyane.

Ohereza imeri kuri twe

Ibiranga

Ibipimo bya tekiniki

Ibikoresho	Icyiciro cyiza cya LiNbO3 wafes
Curie Temp	1142 ± 2.0 ℃
Gukata Inguni	X / Y / Z n'ibindi
Diameter / ubunini	2 "/ 3" / 4 "/ 6" / 8 "
Tol (±)	<0,20 mm
Umubyimba	0.1 ~ 0.5mm cyangwa irenga
Inzu y'ibanze	16mm / 22mm / 32mm
TTV	<3µm
Umuheto	-30
Intambara	<40µm
Icyerekezo	Byose birahari
Ubwoko bw'Ubuso	Uruhande rumwe rusize / Impande ebyiri Zasizwe
Uruhande rusize Ra	<0.5nm
S / D.	20/10
Ibipimo	R = 0.2mm cyangwa Bullnose
Amashanyarazi meza	Fe / Zn / MgO nibindi byiciro bya optique LN
Ibipimo bya Wafer	Ironderero	Oya = 2.2878 / Ne = 2.2033 @ 632nm
	Umwanda,	Nta na kimwe
	Ibice ￠> 0.3 µ m	<= 30
	Shushanya, Gukata	Nta na kimwe
	Ntibisanzwe	Nta mpande zacitse, gushushanya, ibimenyetso byabonye, ikizinga
Gupakira	Agasanduku	25pc kuri buri gasanduku

Ibiranga Ibyingenzi bya LiNbO₃ Wafers

1.Ibiranga imikorere ya Photonic

LiNbO₃ Wafers yacu igaragaza ubushobozi budasanzwe bwimikoranire yumucyo, hamwe na coefficient ya optique idafite umurongo igera kuri 42h00 / V - ituma uburyo bwiza bwo guhindura imirongo yumurambararo bukomeye kuri fotonike ya kwant. Substrates ikomeza kwanduza> 72% muri 320-5200nm, hamwe na verisiyo yakozwe muburyo bwihariye igera kuri <0.2dB / cm igabanuka ryikwirakwizwa ryumurongo wa terefone.

2.Ubwubatsi bwa Acustique

Imiterere ya kristaline ya LiNbO₃ Wafers ishyigikira umuvuduko wumurongo urenga 3800 m / s, bigatuma resonator ikora kugeza kuri 12GHz. Tekinike yacu yihariye itanga ibikoresho bya acoustic wave (SAW) hamwe nigihombo cyo gushiramo munsi ya 1.2dB, mugihe gikomeza ubushyuhe muri ± 15ppm / ° C.

3.Ibidukikije

Yashizweho kugirango ihangane n’ibihe bikabije, Wafers yacu LiNbO₃ ikomeza imikorere kuva ubushyuhe bwa kirogenike kugeza kuri 500 ° C. Ibikoresho byerekana ubukana bwimirasire idasanzwe, hamwe> 1Mrad yuzuye ionizing dose nta kwangirika gukomeye.

4.Ibisabwa-Iboneza byihariye

Dutanga ibyashizweho na domaine zitandukanye zirimo:
Ibihe byateganijwe hamwe na 5-50μm ibihe bya domaine
Ion-ikase firime yoroheje yo guhuza Hybrid
Metamaterial-yongerewe verisiyo kubikorwa byihariye

Ibikorwa byo Gushyira mubikorwa LiNbO₃ Wafers

1.Imiyoboro ikurikira-Gen
LiNbO₃ Wafers ikora nk'umugongo wa terabit-nini ya optique ya transiteri, ituma 800Gbps ihuza imiyoboro ikoresheje ibishushanyo mbonera byateguwe. Substrates yacu iragenda ikoreshwa muburyo bwa optique yo gushyira mubikorwa muri sisitemu yihuta ya AI / ML.
2.6G RF Imbere
Igisekuru giheruka cya LiNbO₃ Wafers gishyigikira ultra-mugari mugushungura kugeza kuri 20GHz, bikemura ibibazo bikenerwa na 6G igaragara. Ibikoresho byacu bituma udushya twa acoustic resonator yubatswe hamwe na Q ibintu birenga 2000.
3. Sisitemu yamakuru ya Quantum
LiNbO₃ Wafers isobanutse neza ikora umusingi wamafoto ya fotone hamwe na> 90% byombi bikora neza. Substrates zacu zituma habaho iterambere muri fotonike ya comptabilite hamwe numuyoboro witumanaho utekanye.
4.Ibisubizo byongerewe ibisubizo
Kuva LiDAR yimodoka ikora kuri 1550nm kugeza kuri sensor-gravimetric sensor, LiNbO₃ Wafers itanga urubuga rukomeye rwa transduction. Ibikoresho byacu bifasha sensor ibyemezo kugeza kumurongo umwe wa molekile.

Inyungu zingenzi za LiNbO₃Wafers

1. Imikorere idasanzwe ya Electro-Optic
Bidasanzwe cyane Coefficient ya Electro-Optic (r₃₃ ~ 30-32 pm / V): Yerekana ibipimo ngenderwaho byinganda za lithium niobate yubucuruzi, ituma 200Gbps + yihuta ya optique ya modulator irenze kure imikorere yimikorere ya silikoni cyangwa polymer.

Gutakaza Ultra-Ntoya (<0.1 dB / cm): Byagezweho binyuze muri nanoscale polishing (Ra <0.3 nm) hamwe na anti-reaction (AR), byongera cyane ingufu zingirakamaro muburyo bwo gutumanaho neza.

2. Ikirenga Piezoelectric & Acoustic Ibintu
Icyifuzo cyibikoresho byinshi-bya SAW / BAW Ibikoresho: Hamwe n umuvuduko wa acoustic wa 3500-3800 m / s, aba wafers bashyigikira 6G mmWave (24-100 GHz) muyunguruzi yerekana igihombo cyo gushiramo <1.0 dB.

Coefficient ya Electromechanical Coupling Coefficient (K² ~ 0,25%): Yongera umurongo mugari no guhitamo ibimenyetso mubice bya RF-imbere, bigatuma bikenerwa na sitasiyo fatizo ya 5G / 6G hamwe n’itumanaho rya satelite.

3. Umuyoboro mugari wa Transparency & Nonlinear Optical Ingaruka
Ultra-Wide Optical Transmission Window (350-5000 nm): Gupfundikira UV kugeza hagati ya IR yerekanwe, ifasha porogaramu nka:

Quantum Optics: Iboneza rimwe na rimwe (PPLN) ibishushanyo bigera> 90% muburyo bwiza bwo gufotora.

Sisitemu ya Laser: Optical parametric oscillation (OPO) itanga umusaruro wumurongo wumurongo (1-10 mm).

Ibyangiritse bidasanzwe byangiritse (> 1 GW / cm²): Yujuje ibyangombwa bisabwa kugirango imbaraga za laser zikoreshwa cyane.

4. Ihungabana rikabije ryibidukikije
Kurwanya Ubushyuhe Bwinshi (Ingingo ya Curie: 1140 ° C): Igumana imikorere ihamye kuri -200 ° C kugeza kuri + 500 ° C, byiza kuri:

Automotive Electronics (moteri yimashini)

Icyogajuru (ibice-byimbitse bya optique)

Gukomera kw'imirasire (> 1 Mrad TID): Yubahirije ibipimo bya MIL-STD-883, ibereye ibikoresho bya elegitoroniki na kirimbuzi.

5. Guhindura no guhuza ibikorwa
Icyerekezo cya Crystal & Doping Optimisation:

X / Y / Z-yaciwe (± 0.3 ° neza)

Doping ya MgO (5 mol%) kugirango yongere imbaraga zo kurwanya ibyangiritse

Inkunga ya Heterogeneous Kwishyira hamwe:

Bihujwe na firime yoroheje LiNbO₃-kuri-Insulator (LNOI) yo guhuza imvange hamwe na fotonike ya silicon (SiPh)

Gushoboza wafer-urwego rwo guhuza optique (CPO)

6. Umusaruro munini & Igiciro Cyiza
6-santimetero (150mm) Umusaruro wa Wafer: Kugabanya ibiciro bya 30% ugereranije nibikorwa gakondo bya santimetero 4.

Gutanga byihuse: Ibicuruzwa bisanzwe byoherezwa mubyumweru 3; mato mato mato (byibuze wafers 5) atanga muminsi 10.