N-Ubwoko bwa SiC Ibigize Substrates Dia6inch Ubwiza bwa monocrystaline nziza na substrate yo hasi

Ibisobanuro bigufi:

N-Ubwoko bwa SiC Composite Substrates ni ibikoresho bya semiconductor bikoreshwa mugukora ibikoresho bya elegitoroniki. Izi substrate zakozwe muri karubide ya silicon (SiC), uruganda ruzwiho kuba rufite ubushyuhe buhebuje bwumuriro, ingufu za voltage nyinshi, hamwe no kurwanya ibidukikije bikabije.


Ibicuruzwa birambuye

Ibicuruzwa

N-Ubwoko bwa SiC Igizwe na Substrates Imbonerahamwe isanzwe

项目Ibintu 指标Ibisobanuro 项目Ibintu 指标Ibisobanuro
直径Diameter 150 ± 0.2mm (硅 面) 粗 糙 度
Imbere (Si-face)
Ra≤0.2nm (5μm * 5μm)
晶型Polytype 4H Chip Edge, Scratch, Crack (ubugenzuzi bugaragara) Nta na kimwe
电阻率Kurwanya 0.015-0.025ohm · cm 总厚度变化TTV ≤3μm
Kwimura igicucu ≥0.4 mm 翘曲度Intambara ≤35μm
空洞Ubusa ≤5ea / wafer (2mm> D> 0.5mm) 总厚度Umubyimba 350 ± 25 mm

"N-ubwoko" bisobanura ubwoko bwa doping ikoreshwa mubikoresho bya SiC. Muri fiziki ya semiconductor, doping ikubiyemo kwinjiza nkana umwanda muri semiconductor kugirango uhindure imiterere yamashanyarazi. N-ubwoko bwa doping butangiza ibintu bitanga ibirenze electroni yubusa, bigaha ibikoresho ibintu bitwara nabi.

Ibyiza bya N-bwoko bwa SiC igizwe na substrate harimo:

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3. Kurwanya imiti n’ibidukikije: SiC irwanya imiti kandi irashobora guhangana n’ibidukikije bikaze, bigatuma ikoreshwa mu bikorwa bitoroshye.

4. Kugabanya gutakaza ingufu: Ugereranije nibikoresho gakondo bishingiye kuri silikoni, insimburangingo ya SiC ituma imbaraga zihinduka neza kandi bikagabanya gutakaza ingufu mubikoresho bya elegitoroniki.

5. Umuyoboro mugari: SiC ifite umurongo mugari, utuma iterambere ryibikoresho bya elegitoronike rishobora gukora ku bushyuhe bwinshi n’ubucucike bukabije.

Muri rusange, N-ubwoko bwa SiC yibikoresho bitanga inyungu zingenzi mugutezimbere ibikoresho bya elegitoroniki bikora cyane, cyane cyane mubisabwa aho ubushyuhe bwo hejuru, ingufu nyinshi, hamwe no guhindura ingufu zingirakamaro.


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