Substrates za N-Type SiC Composite Dia6inch monocrystalline nziza cyane kandi substrate ifite ubuziranenge buke

Ibisobanuro bigufi:

Uduce duto twa N-Type SiC Composite Substrates ni ibikoresho bya semiconductor bikoreshwa mu gukora ibikoresho by'ikoranabuhanga. Utu duce duto twakozwe muri silicon carbide (SiC), ikintu kizwiho gutwara ubushyuhe neza, ingufu nyinshi zo kwangirika, no kurwanya ibidukikije bikomeye.


Ibiranga

Imbonerahamwe isanzwe ya parameter ya SiC yo mu bwoko bwa N

项目Ibintu 指标Ibisobanuro 项目Ibintu 指标Ibisobanuro
直径Ingano 150±0.2mm (硅 面) 粗 糙 度
Ubukana bw'imbere (Si-face)
Ra≤0.2nm (5μm*5μm)
晶型Ubwoko bwa polikopi 4H Edge Chip, Scratch, Crack (igenzura ry'amaso) Nta na kimwe
电阻率Ubushobozi bwo kwirinda 0.015-0.025ohm ·cm 总厚度变化Televiziyo ya TV ≤3μm
Ubunini bw'urwego rwo kwimura ≥0.4μm 翘曲度Ifuro ≤35μm
空洞Ubusa ≤5ea/wafer (2mm>D>0.5mm) 总厚度Ubunini 350±25μm

Inyito ya "N-type" yerekeza ku bwoko bwa doping ikoreshwa mu bikoresho bya SiC. Muri fiziki ya semiconductor, doping ikubiyemo kwinjiza imyanda mu mashini ya semiconductor nkana kugira ngo ihindure imiterere yayo y'amashanyarazi. Doping ya N-type ishyiramo ibintu bitanga electron nyinshi zigenga, bigatuma ibikoresho biba bifite ubwinshi bukabije bw'amashanyarazi.

Ibyiza by'ibice bya N-type SiC bigizwe na:

1. Imikorere y'ubushyuhe bwinshi: SiC ifite ubushyuhe bwinshi kandi ishobora gukora ku bushyuhe bwinshi, bigatuma ikoreshwa mu buryo bw'ikoranabuhanga bukoresha ingufu nyinshi kandi bukoresha inshuro nyinshi.

2. Umuvuduko mwinshi w'amashanyarazi: Ibikoresho bya SiC bifite umuvuduko mwinshi w'amashanyarazi, bigatuma bihanganira amashanyarazi menshi nta gucika kw'amashanyarazi.

3. Ubudahangarwa bw'imiti n'ibidukikije: SiC irwanya imiti kandi ishobora kwihanganira ibidukikije bikomeye, bigatuma ikoreshwa mu bintu bigoye kuyikoresha.

4. Kugabanuka k'ibura ry'ingufu: Ugereranyije n'ibikoresho bisanzwe bishingiye kuri silikoni, substrates za SiC zituma habaho guhinduranya ingufu neza kandi zikagabanya ibura ry'ingufu mu bikoresho by'ikoranabuhanga.

5. Icyuho kinini: SiC ifite icyuho kinini, gituma habaho iterambere ry'ibikoresho by'ikoranabuhanga bishobora gukora ku bushyuhe bwinshi n'ubucucike bw'ingufu nyinshi.

Muri rusange, substrates za N-type SiC zitanga inyungu zikomeye mu iterambere ry’ibikoresho by’ikoranabuhanga bikora neza cyane, cyane cyane mu bikorwa aho imikorere y’ubushyuhe bwinshi, ubucucike bw’ingufu nyinshi, no guhindura ingufu neza ari ingenzi cyane.


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