N-Ubwoko bwa SiC Ibigize Substrates Dia6inch Ubwiza bwa monocrystaline nziza na substrate yo hasi
N-Ubwoko bwa SiC Igizwe na Substrates Imbonerahamwe isanzwe
项目Ibintu | 指标Ibisobanuro | 项目Ibintu | 指标Ibisobanuro |
直径Diameter | 150 ± 0.2mm | 正 面 (硅 面) 粗 糙 度 Imbere (Si-face) | Ra≤0.2nm (5μm * 5μm) |
晶型Polytype | 4H | Chip Edge, Scratch, Crack (ubugenzuzi bugaragara) | Nta na kimwe |
电阻率Kurwanya | 0.015-0.025ohm · cm | 总厚度变化TTV | ≤3μm |
Kwimura igicucu | ≥0.4 mm | 翘曲度Intambara | ≤35μm |
空洞Ubusa | ≤5ea / wafer (2mm> D> 0.5mm) | 总厚度Umubyimba | 350 ± 25 mm |
"N-ubwoko" bisobanura ubwoko bwa doping ikoreshwa mubikoresho bya SiC. Muri fiziki ya semiconductor, doping ikubiyemo kwinjiza nkana umwanda muri semiconductor kugirango uhindure imiterere yamashanyarazi. N-ubwoko bwa doping butangiza ibintu bitanga ibirenze electroni yubusa, bigaha ibikoresho ibintu bitwara nabi.
Ibyiza bya N-bwoko bwa SiC igizwe na substrate harimo:
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3. Kurwanya imiti n’ibidukikije: SiC irwanya imiti kandi irashobora guhangana n’ibidukikije bikaze, bigatuma ikoreshwa mu bikorwa bitoroshye.
4. Kugabanya gutakaza ingufu: Ugereranije nibikoresho gakondo bishingiye kuri silikoni, insimburangingo ya SiC ituma imbaraga zihinduka neza kandi bikagabanya gutakaza ingufu mubikoresho bya elegitoroniki.
5. Umuyoboro mugari: SiC ifite umurongo mugari, utuma iterambere ryibikoresho bya elegitoronike rishobora gukora ku bushyuhe bwinshi n’ubucucike bukabije.
Muri rusange, N-ubwoko bwa SiC yibikoresho bitanga inyungu zingenzi mugutezimbere ibikoresho bya elegitoroniki bikora cyane, cyane cyane mubisabwa aho ubushyuhe bwo hejuru, ingufu nyinshi, hamwe no guhindura ingufu zingirakamaro.