N-Ubwoko bwa SiC kuri Si Composite Substrates Dia6inch

Ibisobanuro bigufi:

N-Ubwoko bwa SiC kuri Si comprate substrate ni ibikoresho bya semiconductor bigizwe nigice cya n-ubwoko bwa silicon karbide (SiC) yashyizwe kuri substrate ya silicon (Si).

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

等级Icyiciro	U 级	P 级	D 级
	Icyiciro cya BPD	Icyiciro cy'umusaruro	Dummy Grade
直径Diameter	150.0 mm ± 0,25mm
厚度Umubyimba	500 μm ± 25μm
晶片方向Icyerekezo cya Wafer	Off axis: 4.0 ° yerekeza kuri <11-20> ± 0.5 ° kuri 4H-N Ku murongo: <0001> ± 0.5 ° kuri 4H-SI
主定位边方向Inzu y'ibanze	{10-10} ± 5.0 °
主定位边长度Uburebure bwibanze	47.5 mm ± 2,5 mm
边缘Kwirengagiza impande	Mm 3
总厚度变化/ 弯曲度 / 翘曲度 TTV / Umuheto / Intambara	≤15μm / ≤40μm / ≤60μm
微管密度和基面位错MPD & BPD	MPD≤1 cm-2	MPD≤5 cm-2	MPD≤15 cm-2
	BPD≤1000cm-2
电阻率Kurwanya	≥1E5 Ω · cm
表面粗糙度Ubugome	Igipolonye Ra≤1 nm
	CMP Ra≤0.5 nm
裂纹(强光灯观测) #	Nta na kimwe		Uburebure bwuzuye ≤10mm, uburebure bumwe≤2mm
Kumenagura urumuri rwinshi
六方空洞（强光灯观测）*	Agace kegeranye ≤1%		Agace kegeranye ≤5%
Isahani ya Hex n'umucyo mwinshi
多型(强光灯观测) *	Nta na kimwe		Agace kegeranye ≤5%
Agace ka polytype nu mucyo mwinshi
划痕(强光灯观测) * &	Igishushanyo 3 kuri 1 × wafer diameter		Igishushanyo 5 kuri 1 × wafer diameter
Igishushanyo n'umucyo mwinshi	uburebure		uburebure
崩边# Chip	Nta na kimwe		5 byemewe, mm1 mm imwe imwe
表面污染物（强光灯观测）	Nta na kimwe
Kwanduzwa n'umucyo mwinshi