Ubwoko bwa N-Type SiC kuri Si Composite Substrates Dia6inch
| 等级Icyiciro | U 级 | P 级 | D 级 |
| Ingano nto ya BPD | Icyiciro cy'umusaruro | Impamyabumenyi y'ikinyoma | |
| 直径Ingano | 150.0 mm±0.25mm | ||
| 厚度Ubunini | 500 μm±25μm | ||
| 晶片方向Icyerekezo cya Wafer | Umurongo utari hagati y'umurongo: 4.0°ugana < 11-20 > ± 0.5° kuri 4H-N Kuri umurongo: <0001>± 0.5° kuri 4H-SI | ||
| 主定位边方向Inzu y'ibanze | {10-10}±5.0° | ||
| 主定位边长度Uburebure bw'ibanze bw'ikiraro | mm 47.5± mm 2.5 | ||
| 边缘Kurekurwa ku ruhande | mm 3 | ||
| 总厚度变化/ 弯曲度 / 翘曲度 TTV / Umuheto / Intambara | ≤15μm /≤40μm /≤60μm | ||
| 微管密度和基面位错MPD na BPD | MPD≤1 cm-2 | MPD≤5 cm-2 | MPD≤15 cm-2 |
| BPD≤1000cm-2 | |||
| 电阻率Ubushobozi bwo kwirinda | ≥1E5 Ω·cm | ||
| 表面粗糙度Ubukana | Igiporuniya Ra≤1 nm | ||
| CMP Ra≤0.5 nm | |||
| 裂纹(强光灯观测) # | Nta na kimwe | Uburebure buhuriweho ≤10mm, uburebure bumwe ≤2mm | |
| Imyanya iterwa n'urumuri rwinshi | |||
| 六方空洞（强光灯观测）* | Agace k'ikusanyirizo ≤1% | Agace k'ikusanyirizo ≤5% | |
| Hex Plates hakoreshejwe urumuri rwinshi | |||
| 多型(强光灯观测) * | Nta na kimwe | Agace k'ikusanyirizo ≤5% | |
| Uduce twa Polytype dukoresheje urumuri rwinshi | |||
| 划痕(强光灯观测) * & | Imikufi 3 kugeza kuri 1 × umurambararo wa wafer | Imikufi 5 kugeza kuri 1 × umurambararo wa wafer | |
| Imivurungano iterwa n'urumuri rwinshi | uburebure buhuriweho | uburebure buhuriweho | |
| 崩边# Chipu yo mu mpande | Nta na kimwe | 5 byemewe, ≤1 mm buri kimwe | |
| 表面污染物（强光灯观测） | Nta na kimwe | ||
| Kwanduzwa n'urumuri rwinshi | |||
Ishusho irambuye
