N-Ubwoko bwa SiC kuri Si Composite Substrates Dia6inch
| 等级Icyiciro | U 级 | P 级 | D 级 |
| Icyiciro cya BPD | Icyiciro cy'umusaruro | Dummy Grade | |
| 直径Diameter | 150.0 mm ± 0,25mm | ||
| 厚度Umubyimba | 500 μm ± 25μm | ||
| 晶片方向Icyerekezo cya Wafer | Off axis: 4.0 ° yerekeza kuri <11-20> ± 0.5 ° kuri 4H-N Ku murongo: <0001> ± 0.5 ° kuri 4H-SI | ||
| 主定位边方向Inzu y'ibanze | {10-10} ± 5.0 ° | ||
| 主定位边长度Uburebure bwibanze | 47.5 mm ± 2,5 mm | ||
| 边缘Kwirengagiza impande | Mm 3 | ||
| 总厚度变化/ 弯曲度 / 翘曲度 TTV / Umuheto / Intambara | ≤15μm / ≤40μm / ≤60μm | ||
| 微管密度和基面位错MPD & BPD | MPD≤1 cm-2 | MPD≤5 cm-2 | MPD≤15 cm-2 |
| BPD≤1000cm-2 | |||
| 电阻率Kurwanya | ≥1E5 Ω · cm | ||
| 表面粗糙度Ubugome | Igipolonye Ra≤1 nm | ||
| CMP Ra≤0.5 nm | |||
| 裂纹(强光灯观测) # | Nta na kimwe | Uburebure bwuzuye ≤10mm, uburebure bumwe≤2mm | |
| Kumenagura urumuri rwinshi | |||
| 六方空洞（强光灯观测）* | Agace kegeranye ≤1% | Agace kegeranye ≤5% | |
| Isahani ya Hex n'umucyo mwinshi | |||
| 多型(强光灯观测) * | Nta na kimwe | Agace kegeranye ≤5% | |
| Agace ka polytype nu mucyo mwinshi | |||
| 划痕(强光灯观测) * & | Igishushanyo 3 kuri 1 × wafer diameter | Igishushanyo 5 kuri 1 × wafer ya diameter | |
| Igishushanyo cyumucyo mwinshi | uburebure | uburebure | |
| 崩边# Chip | Nta na kimwe | 5 byemewe, mm1 mm imwe imwe | |
| 表面污染物（强光灯观测） | Nta na kimwe | ||
| Kwanduzwa n'umucyo mwinshi | |||
Igishushanyo kirambuye
