Intangiriro kuri karubide ya silicon
Carbide ya Silicon (SiC) nigikoresho cya semiconductor igizwe na karubone na silikoni, nikimwe mubikoresho byiza byo gukora ubushyuhe bwinshi, inshuro nyinshi, ingufu nyinshi hamwe n’ibikoresho bya voltage nyinshi.Ugereranije nibikoresho gakondo bya silicon (Si), ikinyuranyo cya bande ya silicon karbide yikubye inshuro 3 icya silikoni.Amashanyarazi yumuriro yikubye inshuro 4-5 ya silicon;Umuvuduko wa voltage wikubye inshuro 8-10 za silicon;Igipimo cyo kwiyuzuzamo cya elegitoronike cyikubye inshuro 2-3 za silikoni, yujuje ibikenerwa ninganda zigezweho kugirango ingufu nyinshi, voltage nini na frequency nyinshi.Ikoreshwa cyane cyane mugukora ibintu byihuta, byihuta cyane, imbaraga nyinshi kandi bitanga urumuri rwa elegitoroniki.Imirima yo kumanuka yamashanyarazi irimo gride yubwenge, ibinyabiziga bishya byingufu, ingufu zumuyaga zifotora, itumanaho rya 5G, nibindi.
Kurwanya ubushyuhe bwinshi.Ubugari bwa bande ya karbide ya silicon yikubye inshuro 2-3 ubwa silikoni, electron ntizoroshye guhinduka mubushyuhe bwinshi, kandi irashobora kwihanganira ubushyuhe bwo hejuru, kandi ubushyuhe bwumuriro wa karubide ya silikoni bukubye inshuro 4-5 za silikoni, gutuma igikoresho cyo gukwirakwiza ubushyuhe cyoroha kandi igipimo cyo gukora ubushyuhe kiri hejuru.Ubushyuhe bwo hejuru burashobora kongera ingufu zumuriro mugihe ugabanya ibisabwa kuri sisitemu yo gukonjesha, bigatuma itumanaho ryoroha kandi rito.
Ihangane n'umuvuduko ukabije.Amashanyarazi yamashanyarazi imbaraga za karubide ya silikoni yikubye inshuro 10 ya silikoni, ishobora kwihanganira ingufu nyinshi kandi ikwiriye kubikoresho bikoresha ingufu nyinshi.
Kurwanya inshuro nyinshi.Carbide ya Silicon ifite umuvuduko wa elegitoronike yuzuye inshuro ebyiri ugereranije na silikoni, bigatuma habaho umurizo wigihe mugihe cyo guhagarika, bishobora kunoza neza uburyo bwo guhinduranya igikoresho kandi bikamenya miniaturizasi yibikoresho.
Gutakaza ingufu nke.Ugereranije nibikoresho bya silicon, karbide ya silicon ifite bike cyane kubirwanya kandi bike kubihombo.Muri icyo gihe, ubugari burebure bwa burebure bwa silicon karbide bigabanya cyane imiyoboro yamenetse no gutakaza ingufu.Mubyongeyeho, ibikoresho bya silicon karbide ntabwo bifite ibintu bikurikirana mugihe cyo guhagarika, kandi igihombo cyo guhinduranya ni gito.
Silicon carbide inganda
Harimo cyane cyane substrate, epitaxy, igishushanyo mbonera, gukora, kashe nibindi.Carbide ya silicon kuva mubikoresho kugeza kumashanyarazi ya semiconductor izagira imikurire imwe ya kristu, gukata ingot, gukura epitaxial, gushushanya wafer, gukora, gupakira nibindi bikorwa.Nyuma yo guhuza ifu ya karibide ya silicon, ingotike ya silicon karbide ikorwa mbere, hanyuma insimburangingo ya silicon karbide iboneka mugukata, gusya no gusya, hanyuma urupapuro rwa epitaxial rukabonwa no gukura kwa epitaxial.Epitaxial wafer ikozwe muri karubide ya silicon ikoresheje lithographie, etching, ion ionation, passivation yicyuma nibindi bikorwa, wafer yaciwemo gupfa, igikoresho kirapakirwa, kandi igikoresho gihurizwa mugikonoshwa kidasanzwe hanyuma giteranyirizwa muri module.
Hejuru yumurongo winganda 1: substrate - gukura kwa kristu ninzira yibanze ihuza inzira
Silicon carbide substrate ihwanye na 47% yikiguzi cyibikoresho bya karibide ya silicon, inzitizi zikomeye zikora tekiniki, agaciro gakomeye, nizo ntandaro yigihe kizaza kinini mu nganda za SiC.
Urebye itandukaniro ryumutungo wa electrochemicique, ibikoresho bya silicon karbide substrate birashobora kugabanywamo insimburangingo (akarere kirwanya 15 ~ 30mΩ · cm) hamwe nubutaka bwakorewe igice (kurwanya hejuru ya 105Ω · cm).Ubu bwoko bubiri bwa substrate bukoreshwa mugukora ibikoresho byihariye nkibikoresho byamashanyarazi nibikoresho bya radiyo yumurongo nyuma yo gukura kwa epitaxial.Muri byo, insimburangingo ya silicon karbide substrate ikoreshwa cyane cyane mugukora ibikoresho bya gallium nitride RF, ibikoresho byamashanyarazi nibindi.Mugukuza gan epitaxial layer kuri sisitemu ya SIC igice cya kabiri, isahani ya epitaxial plaque irategurwa, ishobora kurushaho gutegurwa mubikoresho bya HEMT gan iso-nitride RF.Imiyoboro ya silicon karbide substrate ikoreshwa cyane mugukora ibikoresho byamashanyarazi.Bitandukanye nuburyo busanzwe bwo gukora ibikoresho bya silicon yamashanyarazi, ibikoresho byamashanyarazi ya silicon ntibishobora gukorwa muburyo butaziguye kuri silicon karbide substrate, silicon carbide epitaxial layer igomba guhingwa kuri substrate yayobora kugirango ibone urupapuro rwa epitaxial silicon, na epitaxial layer ikorerwa kuri diode ya Schottky, MOSFET, IGBT nibindi bikoresho byamashanyarazi.
Ifu ya karibide ya silikoni yashizwemo ivuye mu ifu ya karubone isukuye cyane nifu ya silikoni isukuye cyane, kandi ingano zitandukanye za silicon karbide ingot zahinzwe munsi yubushyuhe budasanzwe, hanyuma insimburangingo ya silikoni yakozwe muburyo butandukanye bwo gutunganya.Inzira yibanze ikubiyemo:
Sintezike yibikoresho: Ifu ya silicon-isukuye cyane + toner ivangwa ukurikije formulaire, kandi reaction ikorerwa mubyumba byabigenewe munsi yubushyuhe bwo hejuru hejuru ya 2000 ° C kugirango ihuze ibice bya karubide ya silicon hamwe nubwoko bwihariye bwa kirisiti. ingano.Noneho unyuze mu kumenagura, gusuzuma, gusukura nibindi bikorwa, kugirango wuzuze ibisabwa bya silicon karbide yifu yifu yibikoresho fatizo.
Gukura kwa Crystal ninzira yibanze yo gukora silicon karbide substrate yinganda, igena imiterere yamashanyarazi ya silicon karbide substrate.Kugeza ubu, uburyo nyamukuru bwo gukura kwa kirisiti ni ihererekanyabubasha ryimyuka yumubiri (PVT), ubushyuhe bwo hejuru bwimyuka mvaruganda (HT-CVD) hamwe na epitaxy yamazi (LPE).Muri byo, uburyo bwa PVT nuburyo bwibanze bwo kuzamura ubucuruzi bwa SiC substrate muri iki gihe, hamwe nubuhanga buhanitse kandi bukoreshwa cyane mubuhanga.
Gutegura substrate ya SiC biragoye, biganisha ku giciro cyayo kinini
Kugenzura ubushyuhe bwumurima biragoye: Gukura kwinkoni ya kristu ikenera 1500 only, mugihe inkoni ya kirisiti ya SiC igomba guhingwa ku bushyuhe bwo hejuru hejuru ya 2000 ℃, kandi hariho isomeri zirenga 250 za SiC, ariko nyamukuru ya 4H-SiC imwe rukumbi ya kirisiti ya umusaruro wibikoresho byamashanyarazi, niba bidasobanutse neza, bizabona izindi nzego.Byongeye kandi, ubushyuhe bwa gradient mubikomeye bugena igipimo cyo kwimurwa kwa SiC hamwe nuburyo bwo gukura hamwe nuburyo bwo gukura bwa atome ya gaze kuri interineti ya kirisiti, bigira ingaruka kumikurire ya kristu hamwe nubwiza bwa kristu, bityo rero birakenewe gushiraho umurima wubushyuhe utunganijwe kugenzura ikoranabuhanga.Ugereranije nibikoresho bya Si, itandukaniro mubikorwa bya SiC naryo riri mubikorwa byubushyuhe bwo hejuru nko gutera ubushyuhe bwo hejuru ion, gushiramo ubushyuhe bwinshi, gukora ubushyuhe bwinshi, hamwe nuburyo bukomeye bwa mask busabwa nubushyuhe bwo hejuru.
Gukura gahoro gahoro: umuvuduko wubwiyongere bwa Si kristaliste ishobora kugera kuri 30 ~ 150mm / h, kandi umusaruro wa 1-3m silicon kristal ya kristu ifata umunsi umwe gusa;Inkoni ya kirisiti ya SiC hamwe nuburyo bwa PVT nkurugero, umuvuduko wubwiyongere ni 0.2-0.4mm / h, iminsi 7 yo gukura munsi ya 3-6cm, umuvuduko wubwiyongere uri munsi ya 1% yibikoresho bya silikoni, ubushobozi bwo gukora ni bwinshi cyane bigarukira.
Ibicuruzwa byinshi hamwe numusaruro muke: ibipimo byibanze bya SiC substrate harimo ubucucike bwa microtubule, ubucucike bwa dislokasiyo, kurwanya, kurupapuro, ububobere bwo hejuru, nibindi. mugihe ugenzura ibipimo ngenderwaho.
Ibikoresho bifite ubukana bwinshi, ubukana bwinshi, igihe kinini cyo gukata no kwambara cyane: SiC Mohs ubukana bwa 9.25 ni iya kabiri nyuma ya diyama, ibyo bigatuma habaho kwiyongera gukomeye mubibazo byo gutema, gusya no gusya, kandi bifata amasaha agera kuri 120 kugeza gabanya ibice 35-40 bya ingc 3cm.Mubyongeyeho, kubera ubwinshi bwa SiC, imyenda yo gutunganya wafer izaba myinshi, kandi igipimo gisohoka ni 60% gusa.
Iterambere ryiterambere: Ingano yiyongera + igabanuka ryibiciro
Isoko rya SiC kwisi yose umurongo wa santimetero 6 zirakura, kandi ibigo bikomeye byinjiye mumasoko ya santimetero 8.Imishinga yiterambere ryimbere mu gihugu ni santimetero 6.Kugeza ubu, nubwo amasosiyete menshi yo mu gihugu akomeje gushingira ku murongo w’ibicuruzwa bya santimetero 4, ariko inganda zigenda ziyongera buhoro buhoro kugera kuri santimetero 6, hamwe n’ikura ry’ikoranabuhanga rikoresha ibikoresho bya santimetero 6, ikoranabuhanga rya SiC ry’imbere mu gihugu naryo riragenda ritera imbere ubukungu bwa igipimo cyimirongo minini yumusaruro kizagaragazwa, kandi icyuho cyo murugo imbere ya santimetero 6 cyigihe cyo kugabanya umusaruro wagabanutse kugeza ku myaka 7.Ingano nini ya wafer irashobora kuzana ubwiyongere bwumubare wa chip imwe, kuzamura igipimo cyumusaruro, no kugabanya igipimo cyimbuto, kandi ikiguzi cyubushakashatsi niterambere ndetse nigihombo cyumusaruro bizagumaho hafi 7%, bityo bitezimbere wafer ikoreshwa.
Haracyari ingorane nyinshi mugushushanya ibikoresho
Ubucuruzi bwa diode ya SiC bugenda butera imbere buhoro buhoro, kuri ubu, inganda nyinshi zo mu gihugu zateguye ibicuruzwa bya SiC SBD, ibicuruzwa bito n'ibiciriritse bya SiC SBD bifite umutekano uhamye, mu modoka OBC, gukoresha SiC SBD + SI IGBT kugira ngo bigerweho bihamye ubucucike buriho.Kugeza ubu, nta mbogamizi ziri mu gishushanyo mbonera cy’ibicuruzwa bya SiC SBD mu Bushinwa, kandi ikinyuranyo n’ibihugu by’amahanga ni gito.
SiC MOS iracyafite ingorane nyinshi, haracyari icyuho hagati ya SiC MOS n’abakora mu mahanga, kandi urubuga rukora inganda ruracyubakwa.Kugeza ubu, ST, Infineon, Rohm nizindi 600-1700V SiC MOS zimaze kugera ku musaruro mwinshi kandi zasinywe kandi zoherezwa mu nganda nyinshi zikora inganda, mu gihe igishushanyo mbonera cy’imbere mu gihugu cya SiC MOS cyarangiye ahanini, abakora ibishushanyo mbonera bakorana na fabs kuri icyiciro cya wafer, hanyuma nyuma yo kugenzura abakiriya iracyakeneye igihe runaka, bityo haracyari igihe kirekire kuva mubucuruzi bunini.
Kugeza ubu, imiterere ya planari niyo nzira nyamukuru ihitamo, kandi ubwoko bwumwobo bukoreshwa cyane murwego rwumuvuduko mwinshi mugihe kizaza.Imiterere yimigambi Abakora SiC MOS nibyinshi, imiterere yumubumbe ntabwo yoroshye kubyara ibibazo byo gusenyuka byaho ugereranije na groove, bigira ingaruka kumurimo wakazi, kumasoko ari munsi ya 1200V afite agaciro gakomeye ko gusaba, kandi imiterere ya planari irasa byoroshye mubikorwa byo kurangiza, kugirango bihuze nibikorwa no kugenzura ibiciro ibintu bibiri.Igikoresho cya groove gifite ibyiza byo kwipimisha cyane parasitike, kwihuta kwihuta, gutakaza bike no gukora cyane.
2 - Amakuru ya wafer ya SiC
Silicon karbide yumusaruro niterambere ryigurisha, witondere ubusumbane bwimiterere hagati yo gutanga nibisabwa
Hamwe n'ubwiyongere bwihuse bwibisabwa ku isoko rya elegitoroniki y’umuvuduko mwinshi kandi ufite ingufu nyinshi, icyuho kigaragara cy’ibikoresho bya semiconductor gishingiye kuri silicon cyagiye kigaragara buhoro buhoro, kandi ibikoresho bya semiconductor byo mu gisekuru cya gatatu byerekanwe na karubide ya silicon (SiC) buhoro buhoro guhinduka inganda.Urebye imikorere yibikorwa, karibide ya silicon ifite inshuro 3 ubugari bwikigero cyibikoresho bya silikoni, inshuro 10 imbaraga zikomeye zumuriro wumuriro wamashanyarazi, inshuro 3 ubushyuhe bwumuriro, bityo ibikoresho bya karubide ya silicon bikwiranye numuvuduko mwinshi, umuvuduko mwinshi, ubushyuhe bwo hejuru nibindi bikorwa, fasha kunoza imikorere nubucucike bwimbaraga za sisitemu ya elegitoroniki.
Kugeza ubu, diode ya SiC na SiC MOSFETs yagiye buhoro buhoro ku isoko, kandi hari ibicuruzwa byinshi bikuze, muri byo harimo diode ikoreshwa cyane aho gukoresha diode ishingiye kuri silikoni mu bice bimwe na bimwe kuko idafite inyungu zo kwishyurwa;SiC MOSFET nayo ikoreshwa buhoro buhoro mumodoka, kubika ingufu, kwishyiriraho ikirundo, gufotora no mubindi bice;Mu rwego rwo gukoresha amamodoka, inzira ya modularisation iragenda igaragara cyane, imikorere isumba iyindi ya SiC ikeneye gushingira kubikorwa byo gupakira bigezweho kugirango bigerweho, tekiniki hamwe nibikonoshwa bikuze bikuze nkibisanzwe, ejo hazaza cyangwa iterambere rya kashe ya plastike , imiterere yihariye yiterambere irakwiriye cyane kuri moderi ya SiC.
Silicon carbide igiciro cyo kugabanuka umuvuduko cyangwa birenze ibitekerezo
Ikoreshwa ryibikoresho bya silicon karbide bigarukira cyane cyane kubiciro bihanitse, igiciro cya SiC MOSFET kurwego rumwe cyikubye inshuro 4 ugereranije na Si ishingiye kuri IGBT, ibi ni ukubera ko inzira ya karibide ya silicon igoye, aho gukura kwa kristu imwe na epitaxial ntabwo ikaze kubidukikije gusa, ariko kandi umuvuduko wo gukura uratinda, kandi gutunganya kristu imwe muri substrate bigomba kunyura muburyo bwo gukata no gusya.Ukurikije ibintu byihariye biranga hamwe na tekinoroji yo gutunganya idakuze, umusaruro wa substrate yo mu gihugu uri munsi ya 50%, kandi ibintu bitandukanye biganisha ku biciro byo hejuru ndetse n’ibiciro bya epitaxial.
Nyamara, ikiguzi cyibikoresho bya karibide ya silicon nibikoresho bishingiye kuri silikoni biratandukanye cyane, ibiciro bya substrate na epitaxial byumuyoboro wambere bingana na 47% na 23% byibikoresho byose, byose hamwe bikaba 70%, igishushanyo mbonera, gukora no gufunga imiyoboro yinyuma ya 30% gusa, igiciro cyibikorwa byibikoresho bishingiye kuri silikoni byibanda cyane cyane mubikorwa bya wafer byo kumuyoboro winyuma hafi 50%, naho ibiciro bya substrate bingana na 7% gusa.Ikintu cyerekana agaciro ka silicon karbide yinganda zinganda hejuru bivuze ko abakora epitaxy yo hejuru yo hejuru bafite uburenganzira bwibanze bwo kuvuga, nurufunguzo rwimiterere yibikorwa byimbere mu gihugu ndetse n’amahanga.
Duhereye ku buryo bugaragara ku isoko, kugabanya ibiciro bya karubide ya silicon, usibye kunoza karbide ya silicon karbide ndende no gukata, ni ukwagura ubunini bwa wafer, ari nayo nzira ikuze yiterambere rya semiconductor mu bihe byashize, Amakuru ya Wolfspeed yerekana ko karubide ya silicon ya substrate kuzamura kuva kuri santimetero 6 kugera kuri santimetero 8, umusaruro wa chip wujuje ibisabwa urashobora kwiyongera 80% -90%, kandi bigafasha kuzamura umusaruro.Irashobora kugabanya igiciro cyahujwe hamwe 50%.
2023 izwi nka "8-inimero ya SiC umwaka wa mbere", muri uyu mwaka, abakora karbide ya silicon yo mu gihugu ndetse n’amahanga yihutisha imiterere ya karbide ya silikoni 8, nka Wolfspeed ishoramari ry’amadorari miliyoni 14.55 y’amadolari yo kwagura umusaruro wa karuboni, igice cyingenzi muri byo ni iyubakwa ry’uruganda rukora inganda za SiC-8, Kugira ngo ejo hazaza hatangwe 200 mm SiC ibyuma byambaye ubusa ku bigo byinshi;Imbere mu gihugu Tianyue Advanced na Tianke Heda na bo basinyanye amasezerano y'igihe kirekire na Infineon yo gutanga insimburangingo ya karubide ya santimetero 8 mu gihe kiri imbere.
Guhera muri uyu mwaka, karbide ya silicon izihuta kuva kuri santimetero 6 kugeza kuri santimetero 8, Wolfspeed iteganya ko mu 2024, chip ya unit igiciro cya santimetero 8 ugereranije na chip ya unit igiciro cya santimetero 6 muri 2022 izagabanuka hejuru ya 60% , no kugabanuka kw'ibiciro bizakomeza gufungura isoko rya porogaramu, Ji Bond Consulting data ubushakashatsi yerekanye.Kugeza ubu isoko ryibicuruzwa 8-santimetero biri munsi ya 2%, kandi biteganijwe ko umugabane w isoko uziyongera kugera kuri 15% muri 2026.
Mubyukuri, igipimo cyo kugabanuka kwibiciro bya silicon karbide substrate irashobora kurenza abantu benshi batekereza, isoko iriho ubu ya substrate ya santimetero 6 ni 4000-5000 yuan / igice, ugereranije nintangiriro yumwaka yagabanutse cyane, ni biteganijwe ko izamanuka munsi ya 4000 yu mwaka utaha, birakwiye ko tumenya ko bamwe mubakora kugirango babone isoko yambere, bagabanije igiciro cyagurishijwe kumurongo wibiciro munsi, Gufungura icyitegererezo cyintambara yibiciro, cyane cyane yibanda kuri silicon karbide substrate itangwa ryabaye rihagije mu murima wa voltage nkeya, abakora mu gihugu no mu mahanga baraguka cyane ku musaruro w’umusaruro, cyangwa bakareka silicon karbide substrate ikaboneka hakiri kare kuruta uko wabitekerezaga.
Igihe cyo kohereza: Mutarama-19-2024