P-ubwoko bwa SiC substrate SiC wafer Dia2inch ibicuruzwa bishya

Ibisobanuro bigufi:

2 cm P-Ubwoko bwa Silicon Carbide (SiC) Wafer muri 4H cyangwa 6H polytype. Ifite ibintu bisa nkibikoresho bya N-Ubwoko bwa Silicon Carbide (SiC), nkubushyuhe bwo hejuru, ubushyuhe bukabije bwumuriro, amashanyarazi menshi, nibindi. Irembo rya Bipolar Transistors (IGBT). Igishushanyo cya IGBT gikubiyemo guhuza PN, aho P-SiC ishobora kuba nziza mugucunga imyitwarire yibikoresho.

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Ibicuruzwa birambuye

Ibicuruzwa

P-ubwoko bwa silicon karbide substrate ikoreshwa mugukora ibikoresho byamashanyarazi, nka Insulate-Gate Bipolar transistors (IGBTs).

IGBT = MOSFET + BJT, ikaba ari off-off. MOSFET = IGFET (icyuma cya oxyde ya semiconductor yumurima, cyangwa amarembo yubwoko bwumurima transistor). BJT (Bipolar Junction Transistor, izwi kandi nka tristoriste), bipolar bivuze ko hari ubwoko bubiri bwa electron nu mwobo bigira uruhare mubikorwa byo gutwara abantu ku kazi, muri rusange hari ihuriro rya PN rifite uruhare mu kuyobora.

Wafer ya santimetero 2 p ya silicon karbide (SiC) wafer iri muri 4H cyangwa 6H polytype. Ifite ibintu bisa na n-ubwoko bwa silicon karbide (SiC) wafers, nkubushyuhe bwo hejuru, ubushyuhe bwinshi, hamwe n’amashanyarazi menshi. p-ubwoko bwa SiC insimburangingo ikoreshwa cyane muguhimba ibikoresho byamashanyarazi, cyane cyane muguhimba inzugi-bipolar transistors (IGBTs). igishushanyo cya IGBTs kirimo PN ihuza, aho p-bwoko bwa SiC ari byiza kugenzura imyitwarire yigikoresho.