P-type SiC substrate SiC wafer Dia2inch nshya

Substrates za silikoni zo mu bwoko bwa P zikoreshwa cyane mu gukora ibikoresho by'amashanyarazi, nka transistors za Insulate-Gate Bipolar (IGBTs).

IGBT = MOSFET + BJT, ikaba ari switch ikoresha umuriro. MOSFET = IGFET (icyuma cya semiconductor field effect tube, cyangwa transistor y’ubwoko bwa insulated gate type field effect transistor). BJT (Bipolar Junction Transistor, izwi kandi nka transistor), bipolar bivuze ko hari ubwoko bubiri bw’ibikoresho bya elegitoroni n’ibyuho bigira uruhare mu gikorwa cyo gutwara ibintu, muri rusange hari PN ihurirana mu gutwara ibintu.

Wafer ya silikoni karubide (SiC) ya santimetero 2 iri mu bwoko bwa polytype ya 4H cyangwa 6H. Ifite imiterere isa n'iya wafer ya silikoni karubide (SiC) yo mu bwoko bwa n, nko kwirinda ubushyuhe bwinshi, gutwara ubushyuhe bwinshi, no gutwara amashanyarazi menshi. Substrates za SiC zo mu bwoko bwa p zikoreshwa cyane mu gukora ibikoresho by'amashanyarazi, cyane cyane mu gukora transistors za bipolar zikoresha insulated-gate (IGBTs). Imiterere ya IGBTs ikunze kuba ikubiyemo imiyoboro ya PN, aho p-type SiC ari ingirakamaro mu kugenzura imyitwarire y'igikoresho.