Semi-Ihinduranya SiC kuri Si Composite Substrates
Ibintu | Ibisobanuro | Ibintu | Ibisobanuro |
Diameter | 150 ± 0.2mm | Icyerekezo | <111> / <100> / <110> nibindi |
Polytype | 4H | Andika | P / N. |
Kurwanya | ≥1E8ohm · cm | Kubeshya | Flat / Notch |
Kwimura igicucu | ≥0.1μm | Chip Edge, Scratch, Crack (ubugenzuzi bugaragara) | Nta na kimwe |
Ubusa | ≤5ea / wafer (2mm> D> 0.5mm) | TTV | ≤5μm |
Imbere | Ra≤0.2nm (5μm * 5μm) | Umubyimba | 500/625/675 ± 25μm |
Ihuriro ritanga inyungu nyinshi mubikorwa bya elegitoroniki:
Ubwuzuzanye: Gukoresha insimburangingo ya silicon ituma ihuza nubuhanga busanzwe bwa silikoni itunganya kandi ikemerera guhuza hamwe nuburyo bwo gukora semiconductor isanzwe.
Ubushyuhe bwo hejuru: SiC ifite ubushyuhe bwiza cyane kandi irashobora gukora mubushyuhe bwinshi, bigatuma ikenerwa nimbaraga nyinshi hamwe na elegitoronike ikoreshwa cyane.
Umuvuduko mwinshi wo kumeneka: Ibikoresho bya SiC bifite imbaraga nyinshi zo kumeneka kandi birashobora kwihanganira amashanyarazi menshi nta mashanyarazi.
Kugabanuka kw'ingufu z'amashanyarazi: Substrate ya SiC itanga uburyo bwiza bwo guhindura amashanyarazi no gutakaza ingufu nke mubikoresho bya elegitoronike ugereranije nibikoresho gakondo bishingiye kuri silikoni.
Umuyoboro mugari: SiC ifite umurongo mugari, itanga iterambere ryibikoresho bya elegitoronike bishobora gukora ku bushyuhe bwinshi n’ubucucike bukabije.
Igice cya insuline ya SiC kuri Si compte substrate ikomatanya guhuza silicon hamwe nubushobozi bwo hejuru bwamashanyarazi nubushyuhe bwa SiC, bigatuma bukoreshwa mubikorwa bya elegitoroniki bikora cyane.
Gupakira no Gutanga
1. Tuzakoresha plastike ikingira hamwe na bokedi yabugenewe kugirango bapakire. (Enviroment material friendly)
2. Turashobora gukora paki yihariye dukurikije ubwinshi.
3. DHL / Fedex / UPS Express mubisanzwe bifata iminsi igera kuri 3-7 y'akazi aho ujya.