Semi-Ihinduranya SiC kuri Si Composite Substrates
Ibintu | Ibisobanuro | Ibintu | Ibisobanuro |
Diameter | 150 ± 0.2mm | Icyerekezo | <111> / <100> / <110> nibindi |
Polytype | 4H | Andika | P / N. |
Kurwanya | ≥1E8ohm · cm | Kubeshya | Flat / Notch |
Kwimura igicucu | ≥0.1μm | Chip Edge, Scratch, Crack (ubugenzuzi bugaragara) | Nta na kimwe |
Ubusa | ≤5ea / wafer (2mm> D> 0.5mm) | TTV | ≤5μm |
Imbere | Ra≤0.2nm (5μm * 5μm) | Umubyimba | 500/625/675 ± 25μm |
Ihuriro ritanga inyungu nyinshi mubikorwa bya elegitoroniki:
Ubwuzuzanye: Gukoresha insimburangingo ya silicon ituma ihuza nubuhanga busanzwe bwo gutunganya silikoni kandi ikemerera guhuza hamwe nuburyo bukoreshwa na semiconductor.
Ubushyuhe bwo hejuru: SiC ifite ubushyuhe bwiza cyane kandi irashobora gukora mubushyuhe bwinshi, bigatuma ibera imbaraga nyinshi hamwe na elegitoronike ikoreshwa cyane.
Umuvuduko mwinshi wo kumeneka: Ibikoresho bya SiC bifite imbaraga nyinshi zo kumeneka kandi birashobora kwihanganira imirima miremire idafite amashanyarazi.
Kugabanya Gutakaza Imbaraga: Substrates ya SiC itanga uburyo bwiza bwo guhindura amashanyarazi no gutakaza ingufu nke mubikoresho bya elegitoronike ugereranije nibikoresho gakondo bishingiye kuri silikoni.
Umuyoboro mugari: SiC ifite umurongo mugari, itanga iterambere ryibikoresho bya elegitoronike bishobora gukora ku bushyuhe bwinshi n’ubucucike bukabije.
Igice cya-insuline ya SiC kuri Si compte substrate ikomatanya guhuza silicon hamwe nubushobozi bwo hejuru bwamashanyarazi nubushyuhe bwa SiC, bigatuma bukoreshwa mubikorwa bya elegitoroniki ikora cyane.
Gupakira no Gutanga
1. Tuzakoresha plastike ikingira hamwe na bokedi yabugenewe kugirango bapakire. (Enviroment material friendly)
2. Turashobora gukora paki yabugenewe dukurikije ubwinshi.
3. DHL / Fedex / UPS Express mubisanzwe bifata iminsi igera kuri 3-7 y'akazi aho ujya.
Igishushanyo kirambuye

