Agasanduku k'ibikombe byo gukurura bya SiC ceramic
Ibiranga ibikoresho:
1. Ubukana bwinshi: ubukana bwa Mohs bwa silicon carbide ni 9.2-9.5, bukurikira diyama gusa, bufite ubudahangarwa bukomeye bwo kwangirika.
2. Ubushobozi bwo gutwara ubushyuhe bwinshi: ubushobozi bwo gutwara ubushyuhe bwa karubide ya silikoni buri hejuru ya 120-200 W/m·K, bushobora gusohora ubushyuhe vuba kandi bukwiriye ahantu hashyushye cyane.
3. Igipimo cyo kwaguka k'ubushyuhe buke: igipimo cyo kwaguka k'ubushyuhe bwa silikoni karubide kiri hasi (4.0-4.5×10⁻⁶/K), gishobora gukomeza kugumana ubuziranenge ku bushyuhe bwinshi.
4. Gukomera ku binyabutabire: aside ya silikoni karubide n'ubudahangarwa bwa alkali, bikoreshwa mu bidukikije byangiza ibinyabutabire.
5. Ingufu nyinshi za mekanike: karubide ya silikoni ifite imbaraga nyinshi zo kunama no gukomera, kandi ishobora kwihanganira imbaraga nyinshi za mekanike.
Ibiranga:
1. Mu nganda za semiconductor, wafers zoroshye cyane zigomba gushyirwa ku gikombe cyo gukurura imvange, vacuum suction ikoreshwa mu gukosora wafers, kandi inzira yo gusiga imvange, gukata, gusiga imvange, gusukura no gukata ikorerwa kuri wafers.
2. Umushongi wa karubide ya silikoni ufite ubushobozi bwo gutwara ubushyuhe, ushobora kugabanya igihe cyo gusiga irangi no gusiga irangi, no kunoza umusaruro.
3. Umushongi wo gukaraba wa silicon carbide ufite kandi ubushobozi bwo kurwanya aside na alkali.
4. Iyo ugereranyije n'isahani isanzwe itwara ibikoresho bya corundum, bigabanya igihe cyo gushyushya no gukonjesha, bikongera imikorere myiza; Ariko kandi, bishobora kugabanya kwangirika hagati y'isahani yo hejuru n'iyo hasi, bigakomeza gukora neza, kandi bikongera igihe cyo gukora ku kigero cya 40%.
5. Igipimo cy'ibikoresho ni gito, uburemere bworoheje. Biroroshye ku bakoresha gutwara amapaleti, bigabanya ibyago byo kwangirika kw'impanuka biterwa n'ingorane zo gutwara ku kigero cya 20%.
6. Ingano: umurambararo ntarengwa 640mm; Ubugari: 3um cyangwa munsi yayo
Ahantu ho gusaba akazi:
1. Gukora ibikoresho bya semiconductor
●Gutunganya ifu ya wafer:
Ku bijyanye no gufunga wafer mu gufotora, gushushanya, gushyiramo filime nto n'izindi nzira, bigamije kwemeza ko ikora neza kandi ihamye. Ubushyuhe bwayo buri hejuru n'ubudahangarwa bwayo bwa corruption birakwiriye ahantu hakomeye ho gukora ibikoresho bya semiconductor.
●Iterambere ry'imbere mu gifu:
Mu gukura kwa SiC cyangwa GaN epitaxial, nk'igikoresho cyo gushyushya no gusana wafers, gitanga ubushyuhe bumwe n'ubwiza bwa kristale ku bushyuhe bwinshi, bigatuma igikoresho gikora neza.
2. Ibikoresho by'amashanyarazi bikoresha foto
●Uruganda rwa LED:
Ikoreshwa mu gusana isafuriya ya safiro cyangwa SiC, no nk'icyuma gishyushya muri MOCVD, kugira ngo ikure neza mu buryo bumwe, irusheho kunoza imikorere n'ubwiza bw'urumuri rwa LED.
●Diode ya laser:
Nk'igikoresho gikoresha ubuhanga bwo hejuru, gitunganya kandi gishyushya kugira ngo ubushyuhe bw'imikorere bukomeze, cyongera imbaraga zo gusohora no kwizerana kwa diode ya laser.
3. Gutunganya neza
●Gutunganya ibice by'urumuri:
Ikoreshwa mu gukosora ibice by’ubuhanga nk’amatara y’urumuri n’amafiriti kugira ngo imenye neza ko ikoze neza kandi ihumanya ikirere ari gito mu gihe cyo kuyitunganya, kandi ikwiriye gukoreshwa mu gutunganya ibikoresho bikomeye.
●Gutunganya ibyatsi bya seramu:
Nk'igikoresho gihamye cyane, gikwiriye gukoreshwa mu gutunganya neza ibikoresho bya ceramic kugira ngo gikore neza kandi gihuze neza mu gihe cy'ubushyuhe bwinshi n'ikirere cyangiritse.
4. Igerageza rya siyansi
●Igerageza ry'ubushyuhe bwinshi:
Nk'igikoresho cyo gushyiraho ingero mu bushyuhe bwinshi, gishyigikira igeragezwa ry'ubushyuhe bukabije buri hejuru ya 1600°C kugira ngo gihamye ko ubushyuhe bungana kandi ko ingero zihamye.
●Ikizamini cy'imyanda:
Nk'icyitegererezo cyo gukosora no gushyushya ahantu hadakoreshejwe umwuka, kugira ngo hamenyekane ko igerageza ari ryiza kandi rishobora gusubiramo, rikwiriye gukoreshwa mu gusiga irangi ry'umwuka no gutunganya ubushyuhe.
Ibisobanuro bya tekiniki:
| (Umutungo w'ibikoresho) | (Igice) | (ssic) | |
| (Ibikubiye muri SiC) |
| (Uburemere)% | >99 |
| (Ingano y'ingano isanzwe) |
| mikoroni | 4-10 |
| (Ubucucike) |
| kg/dm3 | >3.14 |
| (Uburebure bugaragara) |
| Vo1% | <0.5 |
| (Ubukomere bwa Vickers) | Ubushobozi bwo gupima ikirere 0.5 | GPa | 28 |
| *( Imbaraga zo koroha) | 20ºC | MPa | 450 |
| (Imbaraga zo gukanda) | 20ºC | MPa | 3900 |
| (Modulus irashya) | 20ºC | GPa | 420 |
| (Ubukomere bw'imvune) |
| MPa/m'% | 3.5 |
| (Ubushyuhe butwara amashanyarazi) | 20°ºC | Ubuso/(m*K) | 160 |
| (Guhangana n'ingaruka) | 20°ºC | Ohm.cm | 106-108 |
|
| a(RT**...80ºC) | K-1*10-6 | 4.3 |
|
|
| oºC | 1700 |
Kubera imyaka myinshi y’uburambe mu bya tekiniki n’inganda, XKH irashobora guhindura ibipimo by’ingenzi nko kuba ingano, uburyo bwo gushyushya n’igishushanyo mbonera cy’ingufu z’ingufu hakurikijwe ibyo umukiriya akeneye, ikareba ko ibicuruzwa bihuye neza n’ibyo umukiriya akeneye. Ingufu za SiC silicon carbide ceramic chucks zabaye ibintu by’ingenzi mu gutunganya wafer, gukura kwa epitaxial n’izindi nzira z’ingenzi bitewe n’uburyo zitwara ubushyuhe bwinshi, ubushyuhe bwinshi buhamye n’ubudahangarwa bwa shimi. Cyane cyane mu gukora ibikoresho bya semiconductor byo mu gisekuru cya gatatu nka SiC na GaN, icyifuzo cya silicon carbide ceramic chucks gikomeje kwiyongera. Mu gihe kizaza, hamwe n’iterambere ryihuse rya 5G, imodoka zikoresha amashanyarazi, ubwenge bw’ubukorano n’izindi koranabuhanga, amahirwe yo gukoresha silicon carbide ceramic chucks mu nganda za semiconductor azaba manini.
Ishusho irambuye
