Isahani ya SiC ceramic/agasanduku k'icyuma gifata wafer ya santimetero 4 na santimetero 6 kuri ICP

Ibisobanuro bigufi:

Isahani ya SiC ceramic ni igice cy’imikorere myiza cyakozwe muri Silicon Carbide ifite isuku nyinshi, yagenewe gukoreshwa mu bidukikije bishyuha cyane, imiti, n’imashini. Izwiho gukomera kwayo gukomeye, ubushobozi bwayo bwo gutwara ubushyuhe, no kurwanya ingese, isahani ya SiC ikoreshwa cyane nk’igice cy’icyuma gitwara, susceptor, cyangwa igice cy’imiterere mu nganda za semiconductor, LED, photovoltaic, n’iz’indege.

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Ibiranga

Incamake y'isahani ya keramik ya SiC

Kubera ubushyuhe buhamye bugera kuri 1600°C kandi burwanya cyane imyuka ikora nabi ndetse n’ibidukikije bya plasma, icyuma cya SiC gitanga imikorere myiza mu gihe cyo gushushanya, gushyiramo no gukwirakwiza ubushyuhe bwinshi. Imiterere yacyo y’ubucucike idafite imyenge igabanya umusaruro w’udusimba, bigatuma tuba twiza cyane mu buryo bwo gusukura cyane mu buryo bworoshye cyangwa mu buryo bwo gusukura.

Porogaramu ya SiC ceramic plate

1. Gukora ibikoresho bya semiconductor

Amasahani ya SiC akoreshwa cyane nk'ibikoresho byo gutwara wafer, susceptors, n'amasahani yo gupfunyika mu bikoresho bya semiconductor nka CVD (Chemical Vapor Deposition), PVD (Physical Vapor Deposition), na sisitemu zo gushushanya. Uburyo bwiza bwo gutwara ubushyuhe no kwagura ubushyuhe buke bituma zigumana ubushyuhe bumwe, ibyo bikaba ari ingenzi cyane mu gutunganya wafer neza cyane. Kuba SiC irwanya imyuka yangiza na plasma bituma iramba ahantu habi, bigafasha kugabanya ubwandu bw'udukoko no kubungabunga ibikoresho.

2. Inganda za LED – Gushushanya ICP

Mu rwego rw'inganda za LED, plaque za SiC ni ingenzi muri sisitemu zo gushushanya za ICP (Inductively Coupled Plasma). Zikora nk'ibikoresho byo gushushanya, zitanga urubuga ruhamye kandi rukomeye rwo gushyigikira wafers za safiro cyangwa GaN mu gihe cyo gutunganya plasma. Kuba zifite ubushobozi bwo guhangana na plasma neza, ubugari bw'ubuso, no kudahindagurika mu bipimo bifasha kwemeza ko gushushanya kwazo ari ingenzi kandi bingana, bigatuma umusaruro wiyongera n'imikorere y'ibikoresho muri chips za LED.

3. Ingufu z'izuba (photovoltaics) n'ingufu z'izuba

Amasahani ya SiC ceramic akoreshwa kandi mu gukora uturemangingo tw’izuba, cyane cyane mu gihe cyo gushyushya no gukurura ubushyuhe bwinshi. Kuba nta kintu na kimwe gihari ku bushyuhe bwinshi kandi ubushobozi bwo kwirinda guhindagurika bituma uturemangingo twa silikoni dutunganywa neza. Byongeye kandi, ingaruka nke zo kwandura ni ingenzi cyane kugira ngo uturemangingo tw’izuba dukomeze gukora neza.

Imiterere ya plate ya ceramic ya SiC

1. Ingufu n'Ubukomere Bidasanzwe bya Mekanike

Amasahani ya SiC ceramic agaragaza imbaraga nyinshi cyane za mekanike, aho imbaraga zisanzwe zo guhindagurika zirenga 400 MPa naho ubukana bwa Vickers bugera kuri >2000 HV. Ibi bituma adapfa kwangirika, kwangirika no guhinduka, bigatuma amara igihe kirekire nubwo haba hari umutwaro mwinshi cyangwa ubushyuhe bwinshi.

2. Ubushyuhe bwinshi butuma habaho amashanyarazi menshi

SiC ifite ubushobozi bwo gutwara ubushyuhe bwinshi (ubusanzwe 120–200 W/m·K), bigatuma ikwirakwizwa neza ku buso bwayo. Iyi miterere ni ingenzi mu bikorwa nko gukata, gushyira mu bubiko cyangwa gusya, aho ubushyuhe bungana bigira ingaruka ku musaruro n'ubwiza bw'umusaruro.

3. Ubushyuhe buhamye cyane

Bitewe n'aho ubushyuhe bushongesha cyane (2700°C) n'ubushyuhe buke (4.0 × 10⁻⁶/K), ibyuma bya SiC ceramic plates bigumana ubuziranenge n'imiterere myiza mu gihe cy'ubushyuhe n'ubukonje bwihuse. Ibi bituma biba byiza gukoreshwa mu itanura rishyuha cyane, mu byumba by'ubushyuhe, no mu bidukikije bya plasma.

Imitungo ya tekiniki
Urutonde	Ishami	Agaciro
Izina ry'Ikintu		Karubide ya Sintered Silicon	Karubide ya Silikoni idafite umuvuduko	Karubide ya Silicon yongeye gukoreshwa
Imiterere		RBSiC	SSiC	R-SiC
Ubucucike bw'umubyimba	g/cm3	3	3.15 ± 0.03	2.60-2.70
Imbaraga zo Kongera Uburemere	MPa (kpsi)	338 (49)	380 (55)	80-90 (20°C) 90-100 (1400°C)
Imbaraga zo Gukanda	MPa (kpsi)	1120 (158)	3970 (560)	> 600
Ubukomere	Knoop	2700	2800	/
Gusenya Ubwirinzi	MPa m1/2	4.5	4	/
Ubushobozi bwo gutwara ubushyuhe	W/mk	95	120	23
Igipimo cy'ubwiyongere bw'ubushyuhe	10^-6.1/°C	5	4	4.7
Ubushyuhe bwihariye	Joule/g 0k	0.8	0.67	/
Ubushyuhe ntarengwa mu kirere	℃	1200	1500	1600
Modulus irashya	Gpa	360	410	240

Ibibazo n'Ibisubizo ku isahani ya SiC ceramic

Q: Ni iyihe miterere y'icyuma cya silikoni cya karuboni?

A: Amasahani ya silicon carbide (SiC) azwiho gukomera kwayo, ubukana bwayo, no kudahindagurika kw'ubushyuhe. Atanga ubushobozi bwiza bwo gutwara ubushyuhe no kwaguka guke, bigatuma habaho imikorere myiza mu gihe cy'ubushyuhe bukabije. SiC kandi ntigira imiti, irwanya aside, alkali, na plasma, bigatuma iba nziza cyane mu gutunganya semiconductor na LED. Ubuso bwayo bunini kandi bworoshye bugabanya gukora uduce duto, bugakomeza guhuza neza n'icyumba gisukuye. Amasahani ya SiC akoreshwa cyane nk'ibikoresho byo gutwara wafer, susceptors, n'ibice bishyigikira mu bidukikije birimo ubushyuhe bwinshi n'ubukonje mu nganda za semiconductor, photovoltaic, n'iby'indege.