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SiC Epitaxial Wafer kubikoresho byamashanyarazi - 4H-SiC, N-ubwoko, Ubucucike Buke

SiC Epitaxial Wafer kubikoresho byamashanyarazi - 4H-SiC, N-Ubwoko, Ubucucike Buke Bwuzuye Ishusho
  • SiC Epitaxial Wafer kubikoresho byamashanyarazi - 4H-SiC, N-ubwoko, Ubucucike Buke
  • SiC Epitaxial Wafer kubikoresho byamashanyarazi - 4H-SiC, N-ubwoko, Ubucucike Buke
  • SiC Epitaxial Wafer kubikoresho byamashanyarazi - 4H-SiC, N-ubwoko, Ubucucike Buke

Ibisobanuro bigufi:

SiC Epitaxial Wafer niyo shingiro ryibikoresho bigezweho bikora neza cyane, cyane cyane ibyagenewe ingufu nyinshi, inshuro nyinshi, nubushyuhe bwo hejuru. Mugufi kuri Silicon Carbide Epitaxial Wafer, Wafer ya SiC Epitaxial Wafer igizwe nubwiza buhanitse, bworoshye bwa epitaxial SiC bwakuze hejuru yubutaka bwa SiC. Ikoreshwa rya tekinoroji ya SiC Epitaxial Wafer riragenda ryiyongera cyane mu binyabiziga by’amashanyarazi, imiyoboro y’ubwenge, sisitemu y’ingufu zishobora kongera ingufu, hamwe n’ikirere bitewe n’imiterere y’umubiri ndetse n’ikoranabuhanga ugereranije na wafer isanzwe ishingiye kuri silikoni.


Ibiranga

Igishushanyo kirambuye

SiC Epitaxial Wafer-4
SiC Epitaxial Wafer-6 - 副本

Intangiriro

SiC Epitaxial Wafer niyo shingiro ryibikoresho bigezweho bikora neza cyane, cyane cyane ibyagenewe ingufu nyinshi, inshuro nyinshi, nubushyuhe bwo hejuru. Mugufi kuri Silicon Carbide Epitaxial Wafer, Wafer ya SiC Epitaxial Wafer igizwe nubwiza buhanitse, bworoshye bwa epitaxial SiC bwakuze hejuru yubutaka bwa SiC. Ikoreshwa rya tekinoroji ya SiC Epitaxial Wafer riragenda ryiyongera cyane mu binyabiziga by’amashanyarazi, imiyoboro y’ubwenge, sisitemu y’ingufu zishobora kongera ingufu, hamwe n’ikirere bitewe n’imiterere y’umubiri ndetse n’ikoranabuhanga ugereranije na wafer isanzwe ishingiye kuri silikoni.

Amahame yo guhimba ya SiC Epitaxial Wafer

Gukora SiC Epitaxial Wafer bisaba uburyo bwo kugenzura imyuka ihumeka cyane (CVD). Igice cya epitaxial gikura mubutaka bwa monocrystalline SiC hakoreshejwe imyuka nka silane (SiH₄), propane (C₃H₈), na hydrogen (H₂) mubushyuhe burenga 1500 ° C. Iterambere ryubushyuhe bwo hejuru ryerekana ubwiza bwa kristaline hamwe nudusembwa duto hagati ya epitaxial layer na substrate.

Inzira ikubiyemo ibyiciro byinshi byingenzi:

  1. Kwitegura: Urufatiro rwa SiC wafer rusukuye kandi rusizwe neza kugirango atome yoroshye.

  2. Gukura kwa CVD.

  3. Igenzura rya Doping: N-ubwoko cyangwa P-doping itangizwa mugihe cya epitaxy kugirango igere kumashanyarazi yifuzwa.

  4. Kugenzura na Metrologiya: Microscopi optique, AFM, na X-ray itandukanya ikoreshwa kugirango hamenyekane ubunini bwurwego, ubunini bwa doping, nubucucike bwinenge.

Buri WaC Epitaxial Wafer ikurikiranwa neza kugirango ikomeze kwihanganira ubukana buringaniye, uburinganire bwubuso, hamwe no guhangana. Ubushobozi bwo guhuza neza ibipimo nibyingenzi kuri voltage nyinshi MOSFETs, diode ya Schottky, nibindi bikoresho byamashanyarazi.

Ibisobanuro

Parameter Ibisobanuro
Ibyiciro Ibikoresho Ubumenyi, Crystal Substrates imwe
Polytype 4H
Doping N Ubwoko
Diameter Mm 101
Ubworoherane bwa Diameter ± 5%
Umubyimba 0,35 mm
Ubworoherane ± 5%
Uburebure bwibanze Mm 22 (± 10%)
TTV (Itandukaniro Ryuzuye) ≤10 µm
Intambara ≤25 µm
FWHM ≤30 Arc-amasegonda
Kurangiza Rq ≤0.35 nm

Porogaramu ya SiC Epitaxial Wafer

SiC Epitaxial Wafer ibicuruzwa nibyingenzi mubice byinshi:

  • Ibinyabiziga by'amashanyarazi (EV): Ibikoresho bya SiC Epitaxial Wafer byongera imbaraga za powertrain no kugabanya ibiro.

  • Ingufu zisubirwamo: Ikoreshwa muri inverters ya sisitemu yizuba nizuba.

  • Amashanyarazi: Gushoboza inshuro nyinshi, ubushyuhe bwo hejuru hamwe nigihombo gito.

  • Ikirere n'Ingabo: Nibyiza kubidukikije bikaze bisaba semiconductor ikomeye.

  • Sitasiyo ya 5G: Ibice bya SiC Epitaxial Wafer bishyigikira ingufu zingana kubikorwa bya RF.

SiC Epitaxial Wafer ituma ibishushanyo mbonera, guhinduranya byihuse, hamwe no guhindura ingufu nyinshi ugereranije na wafer ya silicon.

Ibyiza bya SiC Epitaxial Wafer

SiC Epitaxial Wafer tekinoroji itanga inyungu zingenzi:

  1. Umuvuduko mwinshi wo kumeneka: Ihangane na voltage hejuru yikubye inshuro 10 kurenza Si wafers.

  2. Amashanyarazi: SiC Epitaxial Wafer ikwirakwiza ubushyuhe vuba, ituma ibikoresho bikora neza kandi byizewe.

  3. Umuvuduko mwinshi: Guhindura igihombo gito bituma gukora neza no miniaturizasi.

  4. Broadgap: Iremeza ituze kuri voltage nyinshi nubushyuhe.

  5. Gukomera kw'ibikoresho: SiC ni chimique inert kandi irakomeye, nibyiza kubisabwa.

Izi nyungu zituma SiC Epitaxial Wafer ibikoresho byo guhitamo ibisekuruza bizaza bya semiconductor.

Ibibazo: Wafer Epitaxial Wafer

Q1: Ni irihe tandukaniro riri hagati ya wafer ya SiC na Wafer Epitaxial Wafer?
Wafer ya SiC bivuga igice kinini, mugihe SiC Epitaxial Wafer ikubiyemo urwego rwakuze rwihariye rukoreshwa muguhimba ibikoresho.

Q2: Ni ubuhe bunini buboneka kuri SiC Epitaxial Wafer?
Epitaxial layers isanzwe kuva kuri micrometero nkeya kugeza hejuru ya 100 mm, bitewe nibisabwa.

Q3: Ese SiC Epitaxial Wafer ikwiranye nubushyuhe bwo hejuru?
Nibyo, SiC Epitaxial Wafer irashobora gukora mubihe biri hejuru ya 600 ° C, irusha silikoni cyane.

Q4: Kuki ubwinshi bwinenge ari ngombwa muri WaC Epitaxial Wafer?
Ubucucike buke buteza imbere imikorere yumusaruro numusaruro, cyane cyane kubikorwa bya voltage nyinshi.

Q5: Ese ubwoko bwa N na P-SiC Epitaxial Wafers byombi birahari?
Nibyo, ubwo bwoko bwombi bwakozwe hifashishijwe igenzura rya gaze ya dopant mugihe cya epitaxial.

Q6: Ni ubuhe bunini bwa wafer busanzwe kuri SiC Epitaxial Wafer?
Ibipimo bisanzwe birimo santimetero 2, 4-santimetero, 6-santimetero, no kwiyongera-8-byo gukora cyane.

Q7: Nigute SiC Epitaxial Wafer igira ingaruka kubiciro no gukora neza?
Mugihe ubanza bihenze kuruta silicon, SiC Epitaxial Wafer igabanya ingano ya sisitemu no gutakaza ingufu, bizamura imikorere yikiguzi mugihe kirekire.

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