Ubwoko bwa SiC Ingot 4H Dia 4inch 6inch Ubunini 5-10mm Ubushakashatsi / Igipimo cy'udushushanyo

Ubwoko bwa SiC Ingot 4H Dia 4inch 6inch Ubunini 5-10mm Ubushakashatsi / Igipimo cy'indorerwamo Ishusho yagaragaye

Ibisobanuro bigufi:

Silicon Carbide (SiC) yagaragaye nk'igikoresho cy'ingenzi mu bikorwa bya elegitoroniki n'ikoranabuhanga rigezweho bitewe n'ubushobozi bwayo bwiza bw'amashanyarazi, ubushyuhe, n'imashini. Ingot ya 4H-SiC, iboneka mu bugari bwa santimetero 4 na santimetero 6 ifite ubugari bwa mm 5-10, ni igikoresho cy'ibanze mu bushakashatsi no mu iterambere cyangwa nk'ibikoresho byo mu rwego rwo hejuru. Iyi ngot yagenewe guha abashakashatsi n'abakora ibikoresho bya SiC byiza bikwiye gukoreshwa mu gukora ibikoresho by'igerageza, inyigo z'igerageza, cyangwa gupima no gupima. Ifite imiterere yayo yihariye ya kristale ifite impande esheshatu, ingot ya 4H-SiC itanga uburyo bwinshi bwo gukoresha mu bikoresho by'ikoranabuhanga bikoresha ingufu, ibikoresho bifite umurongo munini, na sisitemu zirwanya imirasire.

Ohereza imeri kuri twe

Ibiranga

Imitungo

1. Imiterere n'icyerekezo bya kristu
Ubwoko bwa polytype: 4H (imiterere ya hexagonal)
Ibikoresho bya Lattice Constants:
a = 3.073 Å
c = 10.053 Å
Icyerekezo: Ubusanzwe [0001] (C-plane), ariko izindi cyerekezo nka [11\overline{2}0] (A-plane) nazo ziraboneka iyo ubisabye.

2. Ingano z'umubiri
Ingano:
Amahitamo asanzwe: santimetero 100 na santimetero 150
Ubunini:
Iboneka mu burebure bwa mm 5-10, ishobora guhindurwa bitewe n'ibisabwa gukoreshwa.

3. Imiterere y'amashanyarazi
Ubwoko bwa Doping: Iboneka mu buryo bwa intrinsic (semi-insulating), n-type (doped with azote), cyangwa p-type (doped with aluminum or boron).

4. Imiterere y'ubushyuhe n'imikorere ya mekanike
Ubushobozi bwo gutwara ubushyuhe: 3.5-4.9 W/cm·K ku bushyuhe bw'icyumba, bigatuma ubushyuhe bugabanuka neza.
Ubukomere: Igipimo cya Mohs ni 9, bigatuma SiC ikurikira diyama mu bukomere.

Igipimo	Ibisobanuro birambuye	Ishami
Uburyo bwo Gukura	PVT (Uburyo bwo gutwara umwuka ushyushye)
Ingano	50.8 ± 0.5 / 76.2 ± 0.5 / 100.0 ± 0.5 / 150 ± 0.5	mm
Ubwoko bwa polikopi	4H / 6H (50.8 mm), 4H (76.2 mm, 100.0 mm, 150 mm)
Icyerekezo cy'ubuso	0.0˚ / 4.0˚ / 8.0˚ ± 0.5˚ (50.8 mm), 4.0˚ ± 0.5˚ (ibindi)	impamyabumenyi
Ubwoko	Ubwoko bwa N
Ubunini	5-10 / 10-15 / >15	mm
Icyerekezo cy'ibanze cy'ubugari	(10-10) ± 5.0˚	impamyabumenyi
Uburebure bw'ibanze bw'ikiraro	15.9 ± 2.0 (50.8 mm), 22.0 ± 3.5 (76.2 mm), 32.5 ± 2.0 (100.0 mm), 47.5 ± 2.5 (150 mm)	mm
Icyerekezo cya kabiri cy'icyitegererezo	90˚ CCW uhereye ku cyerekezo ± 5.0˚	impamyabumenyi
Uburebure bwa kabiri bw'ikiraro	8.0 ± 2.0 (50.8 mm), 11.2 ± 2.0 (76.2 mm), 18.0 ± 2.0 (100.0 mm), Nta na kimwe (150 mm)	mm
Icyiciro	Ubushakashatsi / Ubupfumu

Porogaramu

1. Ubushakashatsi n'Iterambere

Ingot y’ubushakashatsi ya 4H-SiC yo mu rwego rwa 4H ni nziza cyane muri laboratwari z’amasomo n’inganda zibanda ku iterambere ry’ibikoresho bishingiye kuri SiC. Ubwiza bwayo buhebuje bwa crystalline butuma habaho igerageza ryimbitse ku miterere ya SiC, nka:
Inyigo z'uburyo bwo kugenda kw'imodoka.
Uburyo bwiza bwo kugaragaza no kugabanya inenge.
Kunoza uburyo bwo gukura kwa epitaxial.

2. Inzu ntoya
Ingot yo mu rwego rwo hejuru ikoreshwa cyane mu gupima, gupima no gukora porogaramu. Ni ubundi buryo buhendutse bwo gukoresha:
Gupima imiterere y'imikorere mu Gukuraho umwuka wa Chemical Vapor (CVD) cyangwa Gukuraho umwuka wa Physical Vapor (PVD).
Gusuzuma inzira zo gukata no gusiga irangi mu nganda.

3. Ibyuma by'ikoranabuhanga bikoresha ingufu
Bitewe n'icyuho kinini cyayo n'ubushobozi bwo gutwara ubushyuhe bwinshi, 4H-SiC ni inkingi ikomeye y'ibikoresho by'ikoranabuhanga bikoresha ingufu, nka:
MOSFET zifite voltage nyinshi.
Diode z'inzitizi za Schottky (SBDs).
Transistors zo mu muhanda zikoresha ikoranabuhanga rya Junction Field-Effect (JFETs).
Porogaramu zirimo inverters z'amashanyarazi, inverters zikoresha imirasire y'izuba, na grids zikoresha ikoranabuhanga.

4. Ibikoresho bikoresha inshuro nyinshi
Uburyo electron zigenda cyane n'ubushobozi buke bwo gutakaza ubushobozi butuma zikoreshwa neza:
Transistors za Radio Frequency (RF).
Sisitemu z'itumanaho zikoresha insinga, harimo n'ibikorwaremezo bya 5G.
Porogaramu zo mu kirere n'iz'ubwirinzi zisaba sisitemu za radar.

5. Sisitemu zirwanya imirasire
Kuba 4H-SiC irwanya kwangirika kw'imirasire bituma iba ingenzi cyane mu bidukikije bikomeye nka:
Ibikoresho byo gushakisha ikirere.
Ibikoresho byo kugenzura uruganda rw'amashanyarazi rwa kirimbuzi.
Ibikoresho by'ikoranabuhanga byo mu rwego rwa gisirikare.

6. Ikoranabuhanga Rikiri Gushya
Uko ikoranabuhanga rya SiC ritera imbere, ikoreshwa ryaryo rikomeza gukura mu nzego nka:
Ubushakashatsi ku bijyanye na fotoniki n'ikoranabuhanga rya quantum.
Iterambere rya za LED zifite ingufu nyinshi n'ibipimo bya UV.
Kwishyira hamwe mu miterere ya heterostructures ya semiconductor ifite uburebure bwa bandgap.
Ibyiza bya 4H-SiC Ingot
Ubuziranenge Buhanitse: Bukorwa mu bihe bikomeye kugira ngo bugabanye umwanda n'ubucucike bw'ibinure.
Uburyo bwo kwagura: Iboneka mu bunini bwa santimetero 4 na santimetero 6 kugira ngo ishyigikire ibikenewe mu nganda no mu bushakashatsi.
Guhindagurika: Ishobora gukoreshwa mu buryo butandukanye bwo gukoresha imiti igabanya ubukana bw'imiti n'uburyo ikoreshwa kugira ngo ihuze n'ibisabwa byihariye.
Imikorere Ihamye: Ubushyuhe n'imikorere ihamye cyane mu gihe cy'imikorere igoye.

Umwanzuro

Ingot ya 4H-SiC, ifite imiterere yayo idasanzwe n'ikoreshwa ryayo rinini, iri ku isonga mu guhanga udushya mu bikoresho by'ikoranabuhanga n'ibikoresho by'ikoranabuhanga byo mu gisekuru gitaha. Byaba bikoreshwa mu bushakashatsi bw'ubushakashatsi, gukora ibishushanyo mbonera mu nganda, cyangwa gukora ibikoresho bigezweho, izi ngot zitanga urubuga rwizewe rwo kuzamura imipaka y'ikoranabuhanga. Hamwe n'ibipimo bihinduka, gukoresha imiti igabanya ubukana, n'icyerekezo, ingot ya 4H-SiC yagenewe guhaza ibyifuzo bihindagurika by'inganda za semiconductor.
Niba ushishikajwe no kumenya byinshi cyangwa gutanga commande, nyamuneka hamagara kugira ngo ubone ibisobanuro birambuye n'inama za tekiniki.