SiC Ingot 4H ubwoko bwa Dia 4inch 6inch Ubunini 5-10mm Ubushakashatsi / Icyiciro cya Dummy

Ibisobanuro bigufi:

Silicon Carbide (SiC) yagaragaye nkibikoresho byingenzi mubikorwa bya elegitoroniki na optoelectronic ikoreshwa kubera amashanyarazi, amashanyarazi, hamwe nubukanishi. 4H-SiC Ingot, iboneka muri diametero ya santimetero 4 na santimetero 6 n'ubugari bwa mm 5-10, ni igicuruzwa fatizo kigamije ubushakashatsi no guteza imbere cyangwa nk'ibikoresho byo mu rwego rwa dummy. Iyi ingot yagenewe guha abashakashatsi naba nganda ibikoresho byiza bya SiC byo mu rwego rwo hejuru bikwiranye no guhimba ibikoresho bya prototype, ubushakashatsi bwubushakashatsi, cyangwa kalibrasi nuburyo bwo gupima. Hamwe nimiterere yihariye ya kristu ya kirisiti, ingot ya 4H-SiC itanga uburyo bukoreshwa mubikoresho bya elegitoroniki, ibikoresho byihuta cyane, hamwe na sisitemu irwanya imirasire.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Ibyiza

1. Imiterere ya Crystal hamwe nicyerekezo
Polytype: 4H (imiterere ya mpande esheshatu)
Inzira ya Lattice:
a = 3.073 Å
c = 10.053 Å
Icyerekezo: Mubisanzwe [0001] (C-indege), ariko ibindi byerekezo nka [11 \ kurenga {2} 0] (A-indege) nabyo birahari bisabwe.

Ibipimo bifatika
Diameter:
Amahitamo asanzwe: santimetero 4 (100 mm) na santimetero 6 (150 mm)
Umubyimba:
Kuboneka murwego rwa mm 5-10, birashobora guhinduka bitewe nibisabwa.

3. Ibyiza byamashanyarazi
Ubwoko bwa Doping: Buraboneka muri intrinsic (semi-insulation), n-ubwoko (dopi hamwe na azote), cyangwa p-ubwoko (bwometse kuri aluminium cyangwa boron).

4. Ibyiza byubushyuhe nubukanishi
Ubushyuhe bwumuriro: 3.5-4.9 W / cm · K mubushyuhe bwicyumba, bigatuma ubushyuhe bwiza bugabanuka.
Gukomera: Mohs igipimo cya 9, bituma SiC iba iya kabiri nyuma ya diyama mubukomere.

Parameter	Ibisobanuro	Igice
Uburyo bwo Gukura	PVT (Gutwara Imyuka Yumubiri)
Diameter	50.8 ± 0.5 / 76.2 ± 0.5 / 100.0 ± 0.5 / 150 ± 0.5	mm
Polytype	4H / 6H (50.8 mm), 4H (76.2 mm, 100.0 mm, 150 mm)
Icyerekezo cy'ubuso	0.0˚ / 4.0˚ / 8.0˚ ± 0.5˚ (50.8 mm), 4.0˚ ± 0.5˚ (abandi)	impamyabumenyi
Andika	N-ubwoko
Umubyimba	5-10 / 10-15 /> 15	mm
Icyerekezo Cyibanze	(10-10) ± 5.0˚	impamyabumenyi
Uburebure bwibanze	15.9 ± 2.0 (50.8 mm), 22.0 ± 3.5 (76.2 mm), 32.5 ± 2.0 (100.0 mm), 47.5 ± 2.5 (150 mm)	mm
Icyerekezo cya kabiri cya Flat	90˚ CCW uhereye ku cyerekezo ± 5.0˚	impamyabumenyi
Uburebure bwa kabiri	8.0 ± 2.0 (50.8 mm), 11.2 ± 2.0 (76.2 mm), 18.0 ± 2.0 (100.0 mm), Nta na kimwe (150 mm)	mm
Icyiciro	Ubushakashatsi / Dummy

Porogaramu

1. Ubushakashatsi n'Iterambere

Ubushakashatsi -cyiciro-4H-SiC ingot nibyiza kuri laboratoire yamasomo ninganda yibanze ku iterambere ryibikoresho bishingiye kuri SiC. Ubwiza bwayo bwiza bwa kristaline butuma igeragezwa risobanutse kumiterere ya SiC, nka:
Kwiga kwimuka.
Kuranga neza no kugabanya tekinike.
Gukwirakwiza ibikorwa byo gukura epitaxial.

2. Dummy Substrate
Dummy-urwego ingot ikoreshwa cyane mugupima, kalibrasi, no gukoresha prototyping. Nuburyo buhendutse bushoboka kuri:
Gutunganya ibipimo bya kalibrasi mububiko bwa chimique (CVD) cyangwa kubitsa kumyuka yumubiri (PVD).
Gusuzuma uburyo bwo gutondeka no gusya mubikorwa byo gukora.

3. Amashanyarazi
Bitewe nubunini bwagutse hamwe nubushyuhe bwo hejuru bwumuriro, 4H-SiC ni ibuye rikomeza imfuruka ya electronics power, nka:
MOSFETS nyinshi.
Schottky Barrière Diode (SBDs).
Ihuriro Umwanya-Ingaruka Transistors (JFETs).
Mubisabwa harimo guhinduranya ibinyabiziga byamashanyarazi, imirasire yizuba, hamwe na gride nziza.

4. Ibikoresho Byinshi-Byinshi
Ibikoresho bya elegitoronike bigenda neza hamwe nubushobozi buke buke bituma bikwiranye na:
Transistors ya Radio Frequency (RF).
Sisitemu y'itumanaho idafite insinga, harimo ibikorwa remezo 5G.
Ikirere hamwe no kwirwanaho bisaba sisitemu ya radar.

5. Imirasire-irwanya sisitemu
4H-SiC irwanya kwangirika kwimirasire ituma iba ingenzi mubidukikije bikaze nka:
Ibyuma byo gushakisha icyogajuru.
Ibikoresho byo gukurikirana amashanyarazi.
Ibyuma bya elegitoroniki.

6. Ikoranabuhanga rishya
Nka tekinoroji ya SiC itera imbere, porogaramu zayo zikomeza kwiyongera mubice nka:
Photonics hamwe na comptabilite yo kubara.
Gutezimbere amashanyarazi menshi LED hamwe na sensor ya UV.
Kwishyira hamwe mugari-bandgap semiconductor heterostructures.
Ibyiza bya 4H-SiC Ingot
Isuku ryinshi: Yakozwe mubihe bikomeye kugirango igabanye umwanda nubucucike.
Ubunini: Buraboneka muri santimetero 4 na santimetero 6 kugirango ushyigikire inganda-ngenderwaho n'ubushakashatsi bukenewe.
Guhinduranya: Guhuza ubwoko butandukanye bwa doping hamwe nicyerekezo kugirango uhuze ibisabwa byihariye.
Imikorere ikomeye: Ubushuhe buhebuje bwumuriro nubukanishi mugihe gikabije.

Umwanzuro

Ingot ya 4H-SiC, hamwe nimiterere yayo idasanzwe hamwe nogukoresha mugari, ihagaze kumwanya wambere wibikoresho bishya bya elegitoroniki izakurikiraho na optoelectronics. Byaba bikoreshwa mubushakashatsi bwamasomo, prototyping yinganda, cyangwa gukora ibikoresho bigezweho, izo ngingo zitanga urubuga rwizewe rwo gusunika imipaka yikoranabuhanga. Hamwe nimiterere yihariye, doping, hamwe nicyerekezo, ingot ya 4H-SiC irahujwe kugirango ihuze ibyifuzo byinganda zikoresha inganda.
Niba ushishikajwe no kwiga byinshi cyangwa gutanga itegeko, nyamuneka wumve neza ibisobanuro birambuye no kugisha inama tekinike.