Itanura rya SiC kristu itanura SiC Ingot ikura 4inch 6inch 8inch PTV Lely TSSG LPE uburyo bwo gukura
Uburyo bukuru bwo gukura bwa kristu nibiranga
(1) Uburyo bwo kohereza imyuka yumubiri (PTV)
Ihame: Ku bushyuhe bwinshi, ibikoresho fatizo bya SiC bigenda byiyongera mugice cya gaze, hanyuma bigahita byongera gushyirwaho kuri kristu yimbuto.
Ibyingenzi byingenzi:
Ubushyuhe bwo hejuru (2000-2500 ° C).
Ubwiza buhanitse, bunini bunini 4H-SiC na 6H-SiC kristu irashobora gukura.
Iterambere ryiterambere riratinda, ariko ireme rya kirisiti ni ryinshi.
Porogaramu: Ahanini ikoreshwa mumashanyarazi ya semiconductor, ibikoresho bya RF nibindi bice byohejuru.
(2) Uburyo bworoshye
Ihame: Crystal ikura na sublimaneous sublimation no kongera gukora ifu ya SiC mubushyuhe bwinshi.
Ibyingenzi byingenzi:
Inzira yo gukura ntisaba imbuto, kandi ingano ya kristu ni nto.
Ubwiza bwa kristu buri hejuru, ariko imikorere yo gukura ni mike.
Birakwiriye ubushakashatsi bwa laboratoire no gutanga umusaruro muto.
Gushyira mu bikorwa: Byakoreshejwe cyane mubushakashatsi bwa siyanse no gutegura ingano ntoya ya SiC.
(3) Uburyo bwiza bwo gukura bwimbuto zo gukemura (TSSG)
Ihame: Mubisubizo byubushyuhe bwo hejuru, ibikoresho fatizo bya SiC bishonga kandi bigahinduka kristu yimbuto.
Ibyingenzi byingenzi:
Ubushyuhe bwo gukura buri hasi (1500-1800 ° C).
Ubwiza buhanitse, inenge nke ya kristu ya SiC irashobora gukura.
Iterambere ryiterambere riratinda, ariko kristu ihuriweho ni nziza.
Porogaramu: Birakwiye mugutegura ubuziranenge bwa SiC kristal, nkibikoresho bya optoelectronic.
(4) Icyiciro cya Liquid Icyiciro (LPE)
Ihame: Mubisubizo byicyuma cyamazi, SiC ibikoresho fatizo gukura epitaxial kuri substrate.
Ibyingenzi byingenzi:
Ubushyuhe bwo gukura buri hasi (1000-1500 ° C).
Iterambere ryihuta, rikwiranye no gukura kwa firime.
Ubwiza bwa kristu ni hejuru, ariko ubunini ni buke.
Porogaramu: Ahanini ikoreshwa mugukura kwa epitaxial ya firime ya SiC, nka sensor hamwe nibikoresho bya optoelectronic.
Inzira nyamukuru yo gukoresha uburyo bwa silicon karbide itanura
Itanura rya kirisiti ya SiC nibikoresho byibanze byo gutegura sic kristu, kandi inzira zingenzi zikoreshwa zirimo:
Gukora ibikoresho bya semiconductor power: Byakoreshejwe mukuzamura ubuziranenge bwa 4H-SiC na 6H-SiC kristal nkibikoresho byububiko bwibikoresho byamashanyarazi (nka MOSFETs, diode).
Ibisabwa: ibinyabiziga byamashanyarazi, inverteri yifoto, ibikoresho byamashanyarazi, nibindi.
Gukora ibikoresho bya Rf: Byakoreshejwe mukuzamura sisitemu ya SiC ifite inenge nkeya nkibikoresho byibikoresho bya RF kugirango bikemure inshuro nyinshi zikenerwa n’itumanaho rya 5G, radar n’itumanaho rya satelite.
Gukora ibikoresho bya Optoelectronic: Byakoreshejwe mukuzamura ubuziranenge bwa sisitemu ya SiC nkibikoresho byo munsi yuburiri, ibyuma bya ultraviolet na laseri.
Ubushakashatsi bwa siyansi n’umusaruro muto: kubushakashatsi bwa laboratoire no guteza imbere ibikoresho bishya kugirango dushyigikire udushya no gutezimbere tekinoroji yo gukura kwa SiC.
Gukora ibikoresho byubushyuhe bwo hejuru: Byakoreshejwe mukuzamura ubushyuhe bwo hejuru bwa kirisiti ya SiC nkibikoresho fatizo byikirere hamwe nubushyuhe bwo hejuru.
Ibikoresho bya SiC itanura na serivisi zitangwa nisosiyete
XKH yibanze ku iterambere no gukora ibikoresho bya SIC kristu itanura, itanga serivisi zikurikira:
Ibikoresho byabigenewe: XKH itanga itanura ryikura ryihariye hamwe nuburyo butandukanye bwo gukura nka PTV na TSSG ukurikije ibyo abakiriya bakeneye.
Inkunga ya tekiniki: XKH iha abakiriya inkunga ya tekiniki kubikorwa byose uhereye kubikorwa byo gukura kwa kristu kugeza kubikoresho.
Serivisi zamahugurwa: XKH itanga amahugurwa yubuyobozi nubuhanga bwa tekinike kubakiriya kugirango bakore neza ibikoresho.
Serivisi nyuma yo kugurisha: XKH itanga igisubizo cyihuse nyuma yo kugurisha no kuzamura ibikoresho kugirango habeho gukomeza umusaruro wabakiriya.
Silicon carbide tekinoroji yo gukura (nka PTV, Lely, TSSG, LPE) ifite porogaramu zingenzi mubijyanye na electronics power, ibikoresho bya RF hamwe na optoelectronics. X.
Igishushanyo kirambuye
