SiC substrate ifite ubugari bwa santimetero 3 na 350 umubyimba wa HPSI ubwoko bwa Prime Grade Dummy Grade

Ibisobanuro bigufi:

Udupira twa Silicon Carbide (SiC) twa santimetero 3 twakozwe mu buryo bwihariye kugira ngo dukoreshwe mu bikoresho by’ikoranabuhanga bikoresha ingufu, optoelectronics, n’ubushakashatsi buhanitse. Tuboneka mu bushakashatsi, mu bushakashatsi no mu byiciro bya Dummy, utu dupira dutanga ubushobozi bwo guhangana n’ibinyabutabire, ubucucike buke, n’ubwiza bwo hejuru. Kubera ko dufite ubushobozi bwo gukingira butagira ingano, dutanga urubuga rwiza rwo gukora ibikoresho bikoresha ingufu nyinshi bikora mu gihe cy’ubushyuhe bwinshi n’amashanyarazi.

Ohereza imeri kuri twe

Ibiranga

Imitungo

Igipimo	Icyiciro cy'umusaruro	Icyiciro cy'ubushakashatsi	Impamyabumenyi y'ikinyoma	Ishami
Icyiciro	Icyiciro cy'umusaruro	Icyiciro cy'ubushakashatsi	Impamyabumenyi y'ikinyoma
Ingano	76.2 ± 0.5	76.2 ± 0.5	76.2 ± 0.5	mm
Ubunini	500 ± 25	500 ± 25	500 ± 25	µm
Icyerekezo cya Wafer	Kuri axis: <0001> ± 0.5°	Kuri axis: <0001> ± 2.0°	Kuri axis: <0001> ± 2.0°	impamyabumenyi
Ubucucike bw'imiyoboro mito (MPD)	≤ 1	≤ 5	≤ 10	cm−2^-2−2
Ubushobozi bwo guhangana n'amashanyarazi	≥ 1E10	≥ 1E5	≥ 1E5	Ω·cm
Dopant	Byakuweho	Byakuweho	Byakuweho
Icyerekezo cy'ibanze cy'ubugari	{1-100} ± 5.0°	{1-100} ± 5.0°	{1-100} ± 5.0°	impamyabumenyi
Uburebure bw'ibanze bw'ikiraro	32.5 ± 3.0	32.5 ± 3.0	32.5 ± 3.0	mm
Uburebure bwa kabiri bw'ikiraro	18.0 ± 2.0	18.0 ± 2.0	18.0 ± 2.0	mm
Icyerekezo cya kabiri cy'icyitegererezo	Ubushyuhe bwa 90° CW uvuye mu nzu y'ibanze ± 5.0°	Ubushyuhe bwa 90° CW uvuye mu nzu y'ibanze ± 5.0°	Ubushyuhe bwa 90° CW uvuye mu nzu y'ibanze ± 5.0°	impamyabumenyi
Kutagaragaza Edge	3	3	3	mm
LTV/TTV/Umuheto/Umupfundo	3 / 10 / ± 30 / 40	3 / 10 / ± 30 / 40	5 / 15 / ± 40 / 45	µm
Ubukana bw'ubuso	Isura: CMP, Isura: Irasekuye	Isura: CMP, Isura: Irasekuye	Isura: CMP, Isura: Irasekuye
Uduce (Urumuri rwinshi)	Nta na kimwe	Nta na kimwe	Nta na kimwe
Amasahani ya Hex (Urumuri rwinshi)	Nta na kimwe	Nta na kimwe	Agace k'ikusanyirizo 10%	%
Uduce twa Polytype (Urumuri rwinshi)	Agace k'ikusanyirizo 5%	Agace k'ikusanyirizo 20%	Akarere karundanyijemo 30%	%
Imikufi (Urumuri rwinshi)	≤ imikufi 5, uburebure buhuriweho ≤ 150	≤ imikufi 10, uburebure buhuriweho ≤ 200	≤ imikufi 10, uburebure buhuriweho ≤ 200	mm
Gukata inkombe	Nta na kimwe ≥ 0.5 mm ubugari/ubujyakuzimu	2 byemewe ≤ 1 mm ubugari/ubujyakuzimu	5 byemewe ≤ 5 mm ubugari/ubujyakuzimu	mm
Kwanduza ubuso	Nta na kimwe	Nta na kimwe	Nta na kimwe

Porogaramu

1. Ibyuma by'ikoranabuhanga bikoresha imbaraga nyinshi
Uburyo buhanitse bwo gutwara ubushyuhe n'icyuho kinini cya wafer za SiC bituma ziba nziza ku bikoresho bifite imbaraga nyinshi kandi bikoresha frequency nyinshi:
●MOSFET na IGBT zo guhindura ingufu.
●Sisitemu zigezweho z'amashanyarazi zikoresha amashanyarazi, harimo inverters na chargers.
● Ibikorwa remezo by'ikoranabuhanga hamwe na sisitemu y'ingufu zishobora kongera gukoreshwa.
2. Sisitemu za RF na Microwave
Substrates za SiC zituma habaho RF na mikoroonde bifite frequency yo hejuru kandi nta gihombo kinini cy'amajwi:
●Sisitemu z'itumanaho na satelite.
●Sisitemu za radar zo mu kirere.
●Ibice bigezweho bya interineti ya 5G.
3. Ibyuma by'ikoranabuhanga n'ibipima
Imiterere yihariye ya SiC ishyigikira porogaramu zitandukanye za optoelectronic:
●Imashini zipima imirasire y'izuba (UV detectors) zikoreshwa mu kugenzura ibidukikije no mu gupima inganda.
●Ibyuma bya LED na laser byo gukoresha mu gucana amatara no mu bikoresho by'ubuhanga.
●Ibikoresho bipima ubushyuhe bwinshi ku nganda zikora mu kirere no mu modoka.
4. Ubushakashatsi n'Iterambere
Ubudasa bw'amanota (Umusaruro, Ubushakashatsi, Ubukorikori) butuma habaho igerageza rigezweho no gushushanya ibikoresho mu mashuri makuru no mu nganda.

Ibyiza

●Kwizerwa:Ubushobozi bwiza bwo guhangana n'ingufu no kudahungabana mu byiciro byose.
●Guhindura ibintu:Ibyerekezo n'ubugari byagenwe kugira ngo bihuze n'ibyo umuntu akeneye bitandukanye.
●Ubuziranenge Buhanitse:Imiterere idafunguye ituma habaho itandukaniro rito riterwa n'umwanda.
●Ubushobozi bwo kwagura:Yujuje ibisabwa haba mu gukora ibintu byinshi ndetse no mu bushakashatsi ku igerageza.
Wafer za SiC zifite santimetero 3 ni inzira yawe yo kugera ku bikoresho bifite imikorere myiza n'iterambere rigezweho mu ikoranabuhanga. Ku bibazo n'ibisobanuro birambuye, twandikire uyu munsi.

Incamake

Wafers za santimetero 3 zikozwe muri High Purity Silicon Carbide (SiC) Wafers, ziboneka mu bushakashatsi, ubushakashatsi, na Dummy Grades, ni substrates nziza zagenewe ibikoresho by'ikoranabuhanga bikoresha ingufu nyinshi, sisitemu za RF/microwave, optoelectronics, na R&D igezweho. Izi wafers zifite ubushobozi bwo gufunga buhoro buhoro, zifite ubushobozi bwo kwirinda guhindagurika neza (≥1E10 Ω·cm ku gipimo cyo gukora), ubucucike buke bwa micropipe (≤1 cm−2^-2−2), kandi zifite ubwiza budasanzwe bwo hejuru. Zinogejwe gukoreshwa mu buryo bwo hejuru, harimo guhindura ingufu, itumanaho, kubona UV, na ikoranabuhanga rya LED. Hamwe n'uburyo bwo guhindura imiterere, ubushobozi bwo gutwara ubushyuhe buhanitse, n'ubushobozi bukomeye bwa mekanike, izi wafers za SiC zituma ibikoresho bikorwa neza kandi byizewe kandi bigahanga udushya mu nganda.