SiC substrate 3inch 350um ubugari bwa HPSI ubwoko bwa Prime Grade Dummy urwego

SiC substrate 3inch 350um yubugari bwa HPSI ubwoko bwa Prime Grade Dummy urwego rwerekanwe

Ibisobanuro bigufi:

Wafers ya santimetero 3 zifite ubuziranenge bwa Silicon Carbide (SiC) zakozwe muburyo bwihariye bwo gusaba amashanyarazi muri electronics, optoelectronics, nubushakashatsi buhanitse. Biboneka Mubikorwa, Ubushakashatsi, na Dummy Grades, iyi wafer itanga imbaraga zidasanzwe, ubwinshi bw inenge, hamwe nubuziranenge bwubuso. Hamwe na kimwe cya kabiri kitarinze gukoreshwa, batanga urubuga rwiza rwo guhimba ibikoresho bikora cyane bikora mubihe bikabije byumuriro n amashanyarazi.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Ibyiza

Parameter	Icyiciro cy'umusaruro	Icyiciro cy'ubushakashatsi	Dummy Grade	Igice
Icyiciro	Icyiciro cy'umusaruro	Icyiciro cy'ubushakashatsi	Dummy Grade
Diameter	76.2 ± 0.5	76.2 ± 0.5	76.2 ± 0.5	mm
Umubyimba	500 ± 25	500 ± 25	500 ± 25	µm
Icyerekezo cya Wafer	Kuri axis: <0001> ± 0.5 °	Kuri axis: <0001> ± 2.0 °	Kuri axis: <0001> ± 2.0 °	impamyabumenyi
Ubucucike bwa Micropipe (MPD)	≤ 1	≤ 5	≤ 10	cm - 2 ^ -2−2
Kurwanya amashanyarazi	≥ 1E10	≥ 1E5	≥ 1E5	Ω · cm
Dopant	Undoped	Undoped	Undoped
Icyerekezo Cyibanze	{1-100} ± 5.0 °	{1-100} ± 5.0 °	{1-100} ± 5.0 °	impamyabumenyi
Uburebure bwibanze	32.5 ± 3.0	32.5 ± 3.0	32.5 ± 3.0	mm
Uburebure bwa kabiri	18.0 ± 2.0	18.0 ± 2.0	18.0 ± 2.0	mm
Icyerekezo cya kabiri cya Flat	90 ° CW kuva kumurongo wambere ± 5.0 °	90 ° CW kuva kumurongo wambere ± 5.0 °	90 ° CW kuva kumurongo wambere ± 5.0 °	impamyabumenyi
Guhezwa	3	3	3	mm
LTV / TTV / Umuheto / Intambara	3/10 / ± 30/40	3/10 / ± 30/40	5/15 / ± 40/45	µm
Ubuso	Si-isura: CMP, C-isura: Yeza	Si-isura: CMP, C-isura: Yeza	Si-isura: CMP, C-isura: Yeza
Ibice (Umucyo mwinshi)	Nta na kimwe	Nta na kimwe	Nta na kimwe
Isahani ya Hex (Umucyo mwinshi)	Nta na kimwe	Nta na kimwe	Agace kegeranye 10%	%
Agace ka polytype (Umucyo mwinshi)	Agace kegeranye 5%	Agace kegeranye 20%	Agace kegeranye 30%	%
Igishushanyo (Umucyo mwinshi)	 5 gushushanya, uburebure bwuzuye ≤ 150	Scr Igishushanyo 10, uburebure bwa cumulative ≤ 200	Scr Igishushanyo 10, uburebure bwa cumulative ≤ 200	mm
Gukata Impande	Nta na kimwe ≥ 0.5 mm ubugari / ubujyakuzimu	2 byemewe ≤ 1 mm ubugari / ubujyakuzimu	5 yemerewe ≤ 5 mm ubugari / ubujyakuzimu	mm
Kwanduza Ubuso	Nta na kimwe	Nta na kimwe	Nta na kimwe

Porogaramu

1. Amashanyarazi akomeye
Ubushuhe buhebuje bwumuriro hamwe nubugari bwagutse bwa SiC wafers bituma biba byiza kubikoresho bifite ingufu nyinshi, byihuta cyane:
MOSFETs na IGBTs zo guhindura imbaraga.
Systems Sisitemu y'amashanyarazi akomeye yimodoka, harimo inverter na charger.
Infrastructure Ibikorwa remezo byubwenge hamwe na sisitemu yingufu zishobora kuvugururwa.
2. Sisitemu ya RF na Microwave
SiC substrates ituma imirongo myinshi ya RF na microwave ikoreshwa hamwe no gutakaza ibimenyetso bike:
Sisitemu y'itumanaho hamwe na sisitemu.
Sisitemu yo mu kirere.
● Ibikoresho bigezweho bya 5G.
3. Optoelectronics na Sensors
Imiterere yihariye ya SiC ishyigikira porogaramu zitandukanye za optoelectronic:
Det Deteter ya UV yo gukurikirana ibidukikije no kumva inganda.
● LED na laser substrates kumatara akomeye-yerekana ibikoresho.
Sens Ubushyuhe bwo hejuru bwo mu kirere n'inganda zitwara ibinyabiziga.
4. Ubushakashatsi n'Iterambere
Ubwinshi bw'amanota (Umusaruro, Ubushakashatsi, Dummy) butuma igeragezwa rigezweho hamwe na prototyping yibikoresho muri za kaminuza n'inganda.

Ibyiza

Kwizerwa:Indashyikirwa nziza kandi itajegajega mu byiciro.
● Guhitamo:Icyerekezo cyerekanwe hamwe nubunini bujyanye nibikenewe bitandukanye.
Pure Isuku ryinshi:Ibihimbano bidafunguye byemeza itandukaniro rito ryanduye.
Ubunini:Yujuje ibisabwa byumusaruro rusange nubushakashatsi bwubushakashatsi.
Wafers ya santimetero 3 zifite ubuziranenge bwa SiC ni irembo ryibikoresho bikora neza kandi bigezweho mu ikoranabuhanga. Kubibazo nibisobanuro birambuye, twandikire uyu munsi.

Incamake

Wafers ya santimetero 3 zifite ubuziranenge bwa Silicon Carbide (SiC), iboneka muri Production, Ubushakashatsi, na Dummy Grades, ni substrate premium yagenewe ibikoresho bya elegitoroniki ifite ingufu nyinshi, sisitemu ya RF / microwave, optoelectronics, hamwe na R&D igezweho. Iyi wafer iranga ibintu bidafunze, bigizwe na kimwe cya kabiri gifite imbaraga zo guhangana (≥1E10 Ω · cm kuri Production Grade), ubukana bwa micropipe nkeya (cm1 cm - 2 ^ -2−2), hamwe nubuziranenge budasanzwe. Bashyizwe mubikorwa byinshi-bikoreshwa cyane, harimo guhindura imbaraga, itumanaho, UV sensing, hamwe na tekinoroji ya LED. Hamwe nicyerekezo cyihariye, hejuru yubushyuhe bwumuriro, hamwe nubukanishi bukomeye, iyi wafers ya SiC ituma ibihimbano bikora neza, byizewe no guhanga udushya mu nganda.