SiC substrate Dia200mm 4H-N na HPSI Silicon carbide
4H-N na HPSI ni ubwoko bwa polytype bwa silicon carbide (SiC), bufite imiterere ya crystal lattice igizwe n'ibice bine bya hexagonal bigizwe na atome enye za karuboni na silicon enye. Iyi miterere itanga imiterere myiza ya electron mobility na volteji yo kwangirika. Muri polytype zose za SiC, 4H-N na HPSI ikoreshwa cyane mu bijyanye n'amashanyarazi bitewe n'uburyo igenda neza ya electron na hole mobility ndetse n'uburyo ubushyuhe bugenda neza.
Kuvuka kwa substrates za 8inch SiC bigaragaza iterambere rikomeye ku nganda zikora semiconductor zikoresha ingufu. Ibikoresho gakondo bya semiconductor bishingiye kuri silicon bigabanuka cyane mu mikorere mu bihe bikomeye nko mu bushyuhe bwinshi n'amashanyarazi menshi, mu gihe substrates za SiC zishobora kugumana imikorere myiza. Ugereranyije n'substrates nto, substrates za 8inch SiC zitanga ubuso bunini bwo gutunganya igice kimwe, ibyo bikaba bivuze ko umusaruro urushaho kuba mwiza kandi amafaranga make, bikaba ari ingenzi mu guteza imbere ikoranabuhanga rya SiC mu bucuruzi.
Ikoranabuhanga ryo gukura ry’ibikoresho bya silikoni karubide (SiC) bya santimetero 8 risaba ubuhanga n’ubuziranenge buhanitse cyane. Ubwiza bw’ibikoresho bigira ingaruka ku mikorere y’ibikoresho bikurikira, bityo ababikora bagomba gukoresha ikoranabuhanga rigezweho kugira ngo barebe ko ibikoresho bitunganijwe neza kandi bifite ubucucike buke. Ibi akenshi biba birimo uburyo bwo gushyira umwuka mu kirere mu buryo bugoye (CVD) hamwe n’uburyo bwo gukura no gukata neza. Ibikoresho bya 4H-N na HPSI SiC bikoreshwa cyane cyane mu bijyanye n’ibikoresho by’ikoranabuhanga bikoresha ingufu, nko mu byuma bihindura ingufu mu buryo buhanitse, inverters zikoresha ingufu z’amashanyarazi, na sisitemu z’ingufu zishobora kuvugururwa.
Dushobora gutanga substrate ya 4H-N 8inch SiC, ubwoko butandukanye bwa wafers za substrate. Dushobora kandi gutegura uburyo bwo guhindura ibintu ukurikije ibyo ukeneye. Murakaza neza!
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