SiC substrate Dia200mm 4H-N na karbide ya HPSI Silicon

SiC substrate Dia200mm 4H-N na HPSI Silicon karbide Yerekana Ishusho

Ibisobanuro bigufi:

Silicon carbide substrate (SiC wafer) nigikoresho kinini cya semiconductor gifite ibikoresho byiza byumubiri na chimique, cyane cyane mubushyuhe bwo hejuru, ubushyuhe bwinshi, imbaraga nyinshi, hamwe nimirasire myinshi. 4H-V ni imwe mu miterere ya kristaline ya karubide ya silicon. Byongeye kandi, insimburangingo ya SiC ifite ubushyuhe bwiza bwumuriro, bivuze ko ishobora gukwirakwiza neza ubushyuhe butangwa nibikoresho mugihe gikora, bikarushaho kongera ubwizerwe nubuzima bwibikoresho.

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Ibicuruzwa birambuye

Ibicuruzwa

4H-N na HPSI ni polytype ya karubide ya silicon (SiC), ifite imiterere ya kasitori ya kirisiti igizwe nibice bitandatu bigizwe na karubone enye na atome enye za silikoni. Iyi miterere iha ibikoresho ibikoresho bya elegitoronike bigenda neza hamwe no guhagarika voltage biranga. Muri polytypes zose za SiC, 4H-N na HPSI zikoreshwa cyane mubijyanye na electronics power kubera uburinganire bwa electron hamwe nu mwobo hamwe nubushyuhe bwo hejuru bwumuriro.

Kugaragara kwa 8inch SiC substrates byerekana iterambere ryinshi mubikorwa byingufu za semiconductor. Ibikoresho gakondo bya silicon bishingiye ku bice bya semiconductor bigira igabanuka ryinshi mubikorwa mubihe bikabije nkubushyuhe bwinshi na voltage nyinshi, mugihe insimburangingo ya SiC ishobora gukomeza imikorere myiza. Ugereranije nuduce duto duto, 8inch SiC substrates itanga ahantu hanini ho gutunganyirizwa igice kimwe, bivuze ko umusaruro uva hejuru hamwe nigiciro gito, byingenzi mugutezimbere ubucuruzi bwa tekinoroji ya SiC.

Ikoranabuhanga ryo gukura kuri 8inch silicon karbide (SiC) isaba ibintu bisobanutse neza kandi byera. Ubwiza bwa substrate bugira ingaruka itaziguye kumikorere yibikoresho byakurikiyeho, bityo abayikora bagomba gukoresha tekinoroji igezweho kugirango barebe neza kristaline itunganijwe hamwe nubucucike buke bwa substrate. Ibi mubisanzwe bikubiyemo ibintu bigoye biva mumashanyarazi (CVD) hamwe no gukura neza kwa kristu hamwe nubuhanga bwo guca. 4H-N na HPSI SiC insimburangingo zikoreshwa cyane mubijyanye n’amashanyarazi ya elegitoronike, nko mu mashanyarazi akomeye cyane, guhinduranya imashini zikurura amashanyarazi, hamwe na sisitemu y’ingufu zishobora kuvugururwa.

Turashobora gutanga 4H-N 8inch SiC substrate, ibyiciro bitandukanye bya substrate ya wafers. Turashobora kandi gutunganya ibintu ukurikije ibyo ukeneye. Murakaza neza!