SiC substrate P na D grade Dia50mm 4H-N 2inch

Ibintu by'ingenzi biranga wafers za SiC mosfet za 2inch ni ibi bikurikira;.

Ubushobozi bwo gutwara ubushyuhe bwinshi: Igenzura imicungire myiza y'ubushyuhe, yongera ubwizerwe bw'ibikoresho n'imikorere yabyo

Uburyo bwo kugenda bwa Electron nyinshi: Butuma habaho guhinduranya ikoranabuhanga ryihuta cyane, rikwiriye gukoreshwa mu buryo bwo hejuru

Gukomera mu by'imiti: Bikomeza imikorere mu gihe cy'ibihe bikomeye cyane.

Guhuza: Bijyanye n'uburyo busanzwe bwo guhuza ibikoresho bya semiconductor n'umusaruro mwinshi

Wafer za SiC mosfet za santimetero 2, santimetero 3, santimetero 4, santimetero 6, santimetero 8 zikoreshwa cyane muri ibi bikurikira: modules z'amashanyarazi ku modoka zikoresha amashanyarazi, zitanga sisitemu z'ingufu zihamye kandi zikora neza, sisitemu z'ingufu zisubiramo zirwanya inverters, kunoza imicungire y'ingufu no kuzihindura,

SiC wafer na Epi-layer wafer bikoreshwa mu byuma bya elegitoroniki n'iby'indege, bitanga itumanaho ryizewe rikoresha umurongo wo hejuru.

Porogaramu za optoelectronic kuri laser na LED zikora neza cyane, zihura n'ibikenewe mu ikoranabuhanga rigezweho ryo kwerekana amatara n'amatara.

Substrates zacu za SiC wafers SiC ni amahitamo meza ku bikoresho by'ikoranabuhanga bikoresha ingufu n'ibikoresho bya RF, cyane cyane aho bikenewe ko byizewe cyane kandi bikora neza cyane. Buri gice cya wafers gikorerwa isuzuma rikomeye kugira ngo kirebe ko cyujuje ibisabwa by'ubuziranenge.

Wafer zacu za 2inch, 3inch, 4inch, 6inch, 8inch 4H-N zo mu bwoko bwa D-grade na P-grade SiC ni amahitamo meza yo gukoresha muri semiconductor zikora neza. Dufite ubwiza budasanzwe bwa crystal, kugenzura neza ubuziranenge, serivisi zo guhindura ibintu, hamwe n'izindi porogaramu zitandukanye, dushobora kandi gutegura uburyo bwo guhindura ibintu hakurikijwe ibyo ukeneye. Ibibazo birahari!