SICOI (Carbide ya Silicon kuri Insulator) Wafers SiC Filime KURI Silicon

Ibisobanuro bigufi:

Silicon Carbide kuri Wafers ya Insulator (SICOI) ni ibisekuru bizakurikiraho bya semiconductor substrate ihuza imiterere isumba iyindi yumubiri na elegitoronike ya karubide ya silicon (SiC) hamwe nibiranga amashanyarazi yihariye yo gutandukanya amashanyarazi, nka dioxyde ya silicon (SiO₂) cyangwa nitride ya silicon (Si₃N₄). Ubusanzwe wafer ya SICOI igizwe na epitaxial SiC igoye, firime iringaniza hagati, hamwe na substrate yunganira, ishobora kuba silicon cyangwa SiC.

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Igishushanyo kirambuye

Kumenyekanisha Carbide ya Silicon kuri Wafers ya Insulator (SICOI)

Iyi miterere ya Hybrid yakozwe kugirango ihuze ibyifuzo byingufu zikomeye, inshuro nyinshi, hamwe nubushyuhe bwo hejuru bwa elegitoroniki. Mugushyiramo urwego rukingira, wafers ya SICOI igabanya ubushobozi bwa parasitike kandi igahagarika imiyoboro yamenetse, bityo bigatuma imirongo ikora cyane, imikorere myiza, hamwe nogucunga neza ubushyuhe. Izi nyungu zihesha agaciro cyane mumirenge nk'imodoka zikoresha amashanyarazi, ibikorwa remezo by'itumanaho rya 5G, sisitemu yo mu kirere, ibikoresho bya elegitoroniki ya RF, hamwe na tekinoroji ya MEMS.

Ihame ry'umusaruro wa SICOI Wafers

Wafer ya SICOI (Caricon Carbide kuri Insulator) ikorwa hifashishijwe iterambereguhuza wafer no kunanuka:

Gukura kwa SiC- Ubwiza buhanitse bwa kirisiti ya SiC wafer (4H / 6H) yateguwe nkibikoresho byabaterankunga.
Kubika Inzira- Filime ikingira (SiO₂ cyangwa Si₃N₄) ikorwa kuri wafer yabatwara (Si cyangwa SiC).
Bonding- Wafer ya SiC hamwe na wafer yabatwara bahujwe hamwe munsi yubushyuhe bwinshi cyangwa ubufasha bwa plasma.
Kunanuka & Polishing- Wafer y'abaterankunga ba SiC iramanurwa kugeza kuri micrometero nkeya hanyuma igasukurwa kugirango igere hejuru ya atome neza.
Ubugenzuzi bwa nyuma- Wafer ya SICOI yuzuye igeragezwa kuburinganire bwuburinganire, hejuru yubuso, no gukora insulation.

Binyuze muri ubu buryo, ainoze ya SiChamwe nibikoresho byiza byamashanyarazi nubushyuhe byahujwe na firime ikingira hamwe na substrate yingoboka, ikora urubuga rukora cyane kubisekuruza bizaza hamwe nibikoresho bya RF.

Ibyiza byingenzi bya Wafers ya SICOI

Icyiciro kiranga	Ibiranga tekiniki	Inyungu Zibanze
Imiterere y'ibikoresho	4H / 6H-SiC igikoresho gikora + firime yerekana (SiO₂ / Si₃N₄) + Si cyangwa itwara SiC	Kugera ku bwigunge bukomeye bw'amashanyarazi, bigabanya kwivanga kwa parasitike
Ibyiza by'amashanyarazi	Imbaraga zo gusenyuka cyane (> 3 MV / cm), gutakaza dielectric	Kunonosorwa kumashanyarazi menshi hamwe no gukora cyane
Ibyiza bya Thermal	Amashanyarazi agera kuri 4.9 W / cm · K, ahamye hejuru ya 500 ° C.	Gukwirakwiza ubushyuhe bwiza, imikorere myiza munsi yumuriro ukabije
Ibikoresho bya mashini	Gukomera gukabije (Mohs 9.5), coefficient yo kwaguka kwinshi	Gukomera birwanya imihangayiko, byongera ibikoresho kuramba
Ubwiza bw'ubuso	Ubuso buhebuje (Ra <0.2 nm)	Itezimbere epitaxy idafite inenge kandi yizewe yibikoresho
Kwikingira	Kurwanya> 10¹⁴ Ω · cm, umuyoboro muke	Igikorwa cyizewe muri RF hamwe na voltage yo hejuru yo kwigunga
Ingano & Customisation	Biboneka muburyo bwa 4, 6, na 8-santimetero; Ubunini bwa SiC 1–100 mm; kubika 0.1-10 mm	Igishushanyo cyoroshye kubisabwa bitandukanye

Ibice byingenzi byo gusaba

Urwego rwo gusaba	Gukoresha Imanza	Ibyiza byo gukora
Amashanyarazi	EV inverter, sitasiyo yumuriro, ibikoresho byamashanyarazi	Umuvuduko mwinshi wo kugabanuka, kugabanya igihombo cyo guhindura
RF & 5G	Base base power amplifier, milimetero-ibice bigize	Parasitike nkeya, ishyigikira ibikorwa bya GHz
MEMS Sensors	Ibyuka-bidukikije byumuvuduko, icyerekezo-MEMS	Ubushyuhe bukabije bwumuriro, bwihanganira imirasire
Ikirere & Defence	Itumanaho rya satelite, imbaraga zindege	Kwizerwa mubushyuhe bukabije no guhura nimirasire
Imiyoboro ya Smart	Guhindura HVDC, kumeneka-kumashanyarazi	Gukwirakwiza cyane bigabanya gutakaza ingufu
Amashanyarazi	UV LEDs, laser substrates	Ubwiza bwo hejuru bwa kristaline bushigikira urumuri rwiza

Ibihimbano bya 4H-SiCOI

Umusaruro wa wafer ya 4H-SiCOI ugerwaho binyuzeguhuza wafer no kunanura inzira, Gushoboza ubuziranenge bwo murwego rwohejuru hamwe na SiC idafite inenge.

a: Igishushanyo cya 4H-SiCOI ibikoresho byo guhimba.
b: Ishusho ya 4-cm 4H-SiCOI wafer ukoresheje guhuza no kunanuka; uturere dufite inenge.
c: Uburinganire bwuburinganire buranga substrate ya 4H-SiCOI.
d: Ishusho nziza ya 4H-SiCOI ipfa.
e: Gutunganya inzira yo guhimba microdisk resonator ya SiC.
f: SEM ya microdisk resonator yuzuye.
g: SEM yagutse yerekana umuhanda wa resonator; AFM inset yerekana nanoscale yubuso bworoshye.
h: Kwambukiranya ibice SEM yerekana hejuru ya parabolike.

Ibibazo kuri Wafers ya SICOI

Q1: Ni izihe nyungu waferi ya SICOI ifite kuruta waferi gakondo ya SiC?
A1: Bitandukanye na sisitemu isanzwe ya SiC, wafer ya SICOI irimo urwego rukingira rugabanya ubushobozi bwa parasitike nubushobozi bwo gutemba, biganisha ku gukora neza, gusubiza neza inshuro nyinshi, no gukora neza cyane.

Q2: Ni ubuhe bunini bwa wafer busanzwe buboneka?
A.

Q3: Ni izihe nganda zunguka cyane muri wafer ya SICOI?
A.

Q4: Nigute urwego rwimikorere rutezimbere imikorere yibikoresho?
A4: Filime ikingira (SiO₂ cyangwa Si₃N₄) irinda kumeneka kwubu kandi igabanya ibiganiro byamashanyarazi, bigafasha kwihanganira voltage nyinshi, guhinduranya neza, no kugabanya ubushyuhe.

Q5: Ese wafer ya SICOI ikwiranye nubushyuhe bwo hejuru?
A5: Yego, hamwe nubushyuhe bwo hejuru bwumuriro hamwe nuburwanya burenga 500 ° C, wafer ya SICOI yagenewe gukora neza mubushuhe bukabije no mubidukikije bikaze.

Q6: Wafer ya SICOI irashobora gutegurwa?
A6: Rwose. Ababikora batanga ibishushanyo mbonera byubunini bwihariye, urwego rwa doping, hamwe na substrate ikomatanya kugirango ihuze ubushakashatsi butandukanye nibikenewe mu nganda.

Mbere: Imashini yo gutema Diamond ya SiC | Safiro | Quartz | Ikirahure

Ibikurikira: Imashini Yinshi ya Diamond Yabonye Imashini ya SiC Sapphire Ultra-Ikomeye Ibikoresho Byoroshye