Imashini ikata insinga za diyama za silikoni ifite icyuma gitunganya ingot ya SiC ya santimetero 4/6/8/12

Ibisobanuro bigufi:

Imashini ikata icyuma cya silicon carbide Diamond Wire ni ubwoko bw'ibikoresho bitunganya neza cyane byagenewe icyuma cya silicon carbide (SiC) ingot slice, hakoreshejwe ikoranabuhanga rya Diamond Wire Saw, binyuze mu nsinga ya diyama yihuta cyane (umurambararo w'umurongo 0.1 ~ 0.3mm) kuri SiC ingot multi-insinga, kugira ngo haboneke uburyo bwo gutegura wafer neza kandi idasembuye cyane. Ibi bikoresho bikoreshwa cyane muri SiC power semiconductor (MOSFET / SBD), radio frequency device (GaN-on-SiC) na optoelectronic device substrate processing, ni ibikoresho by'ingenzi mu ruhererekane rw'inganda za SiC.

Ohereza imeri kuri twe

Ibiranga

Ihame ry'imikorere:

1. Gufata Ingot: Ingot ya SiC (4H/6H-SiC) ishyizwe ku rukuta ruca mu gice cyo gukata kugira ngo hamenyekane neza aho iherereye (± 0.02mm).

2. Inzira y'umurongo wa diyama: umurongo wa diyama (uduce twa diyama dukozwe n'amashanyarazi hejuru) uyoborwa na sisitemu y'uruziga ruyobora kugira ngo rugere ku muvuduko mwinshi (umuvuduko w'umurongo 10 ~ 30m / s).

3. Gukata ibiryo: ingot igezwa mu cyerekezo giteganyijwe, kandi umurongo wa diyama ugacibwa icyarimwe n'imirongo myinshi iteganye (imirongo 100 ~ 500) kugira ngo habeho uduce twinshi twa wafer.

4. Gukonjesha no gukuraho uduce duto: Shyira umuti ukonjesha (amazi yakuwemo ioni + inyongeramusaruro) mu gace gacamo kugira ngo ugabanye kwangirika k'ubushyuhe no gukuraho uduce duto.

Ibipimo by'ingenzi:

1. Umuvuduko wo gukata: 0.2 ~ 1.0mm/umunota (biterwa n'icyerekezo cya kristu n'ubugari bwa SiC).

2. Umuvuduko w'umurongo: 20~50N (umurongo uri hejuru cyane byoroshye gucika, hasi cyane bigira ingaruka ku buryo bwo gukata neza).

3. Ubunini bwa wafer: ubusanzwe ni 350 ~ 500μm, wafer ishobora kugera kuri 100μm.

Ibiranga by'ingenzi:

(1) Uburyo bwo guca neza
Ubwinshi bw'ibice: ± 5μm (@350μm wafer), ni bwiza kurusha uburyo busanzwe bwo gukata morti (± 20μm).

Ubushyuhe bw'ubuso: Ra<0.5μm (nta kindi gikoresho gikenewe kugira ngo ugabanye ingano y'ikoreshwa ry'ibicuruzwa nyuma).

Warpage: <10μm (kugabanya ingorane zo gukosora nyuma).

(2) Uburyo bwo gutunganya neza
Gukata imirongo myinshi: gukata ibice 100 ~ 500 icyarimwe, byongera ubushobozi bwo gukora inshuro 3 ~ 5 (ugereranije no gukata umurongo umwe).

Igihe cy'umurongo: Umurongo wa diyama ushobora gukata SiC ya kilometero 100 ~ 300 (biterwa n'ubukana bw'ingot n'uburyo bwo kunoza imikorere).

(3) Gutunganya ibyangiritse bike
Kuvunika impande: <15μm (gukata bisanzwe >50μm), byongera umusaruro wa wafer.

Umwanya wangiritse munsi y'ubutaka: <5μm (gabanya gukuraho irangi).

(4) Kurengera ibidukikije n'ubukungu
Nta kwanduzanya kwa morti: Ikiguzi cyo gusohora imyanda mu mazi cyagabanutse ugereranije no gukata morti.

Ikoreshwa ry'ibikoresho: Igihombo cyo gukata <100μm/ icyuma gikata, bikagabanya ibikoresho fatizo bya SiC.

Ingaruka zo gukata:

1. Ubwiza bwa Wafer: nta micanga ya macroscopic ku buso, hari inenge nke za microscopic (kwagura kwa dislocation ku buryo bugenzurwa). Ishobora kwinjira mu buryo butaziguye aho irangi ritoshye, igatuma inzira igenda neza.

2. Guhuza: ubugari bw'umugati mu itsinda ni <± 3%, bukwiriye gukorwa mu buryo bwikora.

3. Uburyo bwo gukoresha: Ifasha mu gukata ingot ya 4H/6H-SiC, ijyanye n'ubwoko bwa conductive/semi-insulated.

Ibisobanuro bya tekiniki:

Ibisobanuro	Ibisobanuro birambuye
Ingano (Ub × Ub × Ub)	2500x2300x2500 cyangwa uhindure
Ingano y'ingano y'ibikoresho byo gutunganya	Karubide ya silikoni ya santimetero 4, 6, 8, 10, 12
Ubuso bugoye	Ra≤0.3u
Umuvuduko mpuzandengo wo gukata	0.3mm/umunota
Uburemere	5.5t
Intambwe zo gushyiraho inzira yo guca	Intambwe ≤30
Urusaku rw'ibikoresho	≤80 dB
Insinga z'icyuma zikora cyane	0 ~ 110N (umuvuduko w'insinga 0.25 ni 45N)
Umuvuduko w'insinga z'icyuma	0~30m/S
Ingufu zose	50kw
Umurambararo w'insinga ya diyama	≥0.18mm
Iherezo ry'ubugari	≤0.05mm
Igipimo cyo gukata no kugabanya	≤1% (usibye impamvu z'abantu, ibikoresho bya silikoni, umurongo, kubungabunga n'izindi mpamvu)

Serivisi za XKH:

XKH itanga serivisi zose z’imikorere y’imashini ikata insinga za silicon carbide diamond, harimo guhitamo ibikoresho (umurambararo w’insinga/umuvuduko w’insinga), guteza imbere imikorere (gutunganya ibipimo byo gukata), gutanga ibikoresho (insinga za diyama, uruziga rw’ubuyobozi) n’inkunga nyuma yo kugurisha (gusana ibikoresho, gusesengura ubuziranenge bw’ibicuruzwa), kugira ngo ifashe abakiriya kugera ku musaruro mwinshi (>95%), kandi ihendutse mu gukora SiC wafer. Itanga kandi kuvugurura byihariye (nk’uburyo bwo gukata buto cyane, gupakira no gupakurura mu buryo bwikora) mu gihe cy’ibyumweru 4-8.