Silicon carbide diamant imashini ikata imashini 4/6/8/12 inch SiC ingot gutunganya

Silicon karbide ya diyama yo gukata imashini 4/6/8/12 inch SiC ingot gutunganya Ishusho Yerekanwe

Ibisobanuro bigufi:

Imashini yo gukata ya Silicon Diamond Wire ni ubwoko bwibikoresho byo gutunganya neza cyane byeguriwe uduce duto twa silicon karbide (SiC), hifashishijwe ikoranabuhanga rya Diamond Wire Saw, ukoresheje insinga ya diyama yihuta cyane (umurongo wa diameter 0.1 ~ 0.3mm) kugeza kuri SiC ingot yo guca insinga nyinshi, kugirango ugere ku myiteguro ihanitse, yangiritse cyane. Ibikoresho bikoreshwa cyane mumashanyarazi ya SiC (MOSFET / SBD), ibikoresho bya radiyo yumurongo wa radiyo (GaN-on-SiC) hamwe nogutunganya ibikoresho bya optoelectronic ibikoresho, nibikoresho byingenzi mumurongo wa SiC.

Ohereza imeri kuri twe

Ibiranga

Ihame ry'akazi ：

1. Gukosora Ingot: IngC ya SiC (4H / 6H-SiC) yashyizwe kumurongo wo gukata binyuze murwego rwo kwemeza neza neza imyanya (± 0.02mm).

2. Umurongo wa diyama ugenda: umurongo wa diyama (amashanyarazi ya diyama ya elegitoronike hejuru) utwarwa na sisitemu yo kuyobora ibizunguruka byihuta (umurongo wihuta 10 ~ 30m / s).

3. Gukata ibiryo: ingot igaburirwa icyerekezo cyashyizweho, kandi umurongo wa diyama ucibwa icyarimwe n'imirongo myinshi ibangikanye (imirongo 100 ~ 500) kugirango ikore wafer nyinshi.

Ibipimo by'ingenzi:

1. Gukata umuvuduko: 0.2 ~ 1.0mm / min (ukurikije icyerekezo cya kristu n'ubugari bwa SiC).

2. Guhagarika umurongo: 20 ~ 50N (biroroshye cyane guca umurongo, hasi cyane bigira ingaruka kumyizerere).

3.Umubyimba mwiza: bisanzwe 350 ~ 500μm, wafer irashobora kugera kuri 100 mm.

Ibyingenzi byingenzi:

(1) Gukata neza
Kwihanganira umubyibuho: ± 5μm (@ 350μm wafer), biruta gukata ibisanzwe bisanzwe (± 20μm).

Ubuso bwubuso: Ra <0.5μm (nta gusya kwinyongera bisabwa kugirango ugabanye umubare wibyakozwe nyuma).

Urupapuro: <10μm (gabanya ingorane zo gusya nyuma).

(2) Gutunganya neza
Gukata imirongo myinshi: gukata ibice 100 ~ 500 icyarimwe, kongera ubushobozi bwumusaruro inshuro 3 ~ 5 (v. Gukata umurongo umwe).

Ubuzima bwumurongo: Umurongo wa diyama urashobora kugabanya 100 ~ 300km SiC (ukurikije ubukana bwa ingot hamwe nogutezimbere inzira).

(3) Gutunganya ibyangiritse bike
Kumena impande: <15μm (gukata gakondo> 50μm), kuzamura umusaruro wafer.

Kwangirika kwubutaka: <5μm (kugabanya gukuraho polishinge).

(4) Kurengera ibidukikije n'ubukungu
Nta kwanduza minisiteri: Kugabanya amafaranga yo guta imyanda ugereranije no gukata minisiteri.

Gukoresha ibikoresho: Gukata igihombo <100μm / gukata, kuzigama ibikoresho fatizo bya SiC.

Ingaruka zo gutema:

1. Ubwiza bwa Wafer: nta macroscopique yamenetse hejuru, inenge nke za microscopique (kwaguka kwa dislokisiyo ishobora kugenzurwa). Urashobora kwinjiza muburyo butaziguye guhuza, kugabanya inzira.

2. Guhuzagurika: gutandukana kwubunini bwa wafer mugice ni <± 3%, bibereye kubyara umusaruro.

3.Ibishoboka: Shyigikira 4H / 6H-SiC gukata ingot, bihujwe nubwoko bwitwara / igice cyakorewe.

Ibisobanuro bya tekiniki ：

Ibisobanuro	Ibisobanuro
Ibipimo (L × W × H)	2500x2300x2500 cyangwa guhitamo
Gutunganya ingano yububiko	4, 6, 8, 10, 12 santimetero ya karubide ya silicon
Ubuso bukabije	Ra≤0.3u
Impuzandengo yo kugabanya umuvuduko	0.3mm / min
Ibiro	5.5t
Gukata inzira yo gushiraho intambwe	Intambwe 30
Urusaku rwibikoresho	≤80 dB
Umuyoboro w'icyuma	0 ~ 110N (0,25 insinga zingana ni 45N)
Umuvuduko wicyuma	0 ~ 30m / S.
Imbaraga zose	50kw
Diameter wire diameter	≥0.18mm
Kurangiza uburinganire	≤0.05mm
Gukata no kugabanya igipimo	≤1% (usibye kubwimpamvu zabantu, ibikoresho bya silicon, umurongo, kubungabunga nizindi mpamvu)

Serivisi za XKH:

XKH itanga serivise zose zogukora imashini ya silicon karbide ya diyama yo gukata insinga, harimo guhitamo ibikoresho (diameter ya wire / guhuza umuvuduko wumugozi), guteza imbere inzira (gukata ibipimo byiza), kugemura ibicuruzwa (kugurisha diyama, kugendesha uruziga) no kugurishwa nyuma yo kugurisha (kubungabunga ibikoresho, kugabanya isesengura ryiza), kugirango bifashe abakiriya kugera kumusaruro mwinshi (> 95%), umusaruro muke wa SiC wafer. Itanga kandi ibyagezweho (nka ultra-thin gukata, gupakira byikora no gupakurura) hamwe nicyumweru 4-8 cyo kuyobora.