Silicon karbide irwanya itanura ndende ya kirisiti ikura 6/8 / 12inch inch SiC ingot kristal PVT uburyo

Silicon karbide irwanya itanura rirerire ikura 6/8 / 12inch inch SiC ingot kristal PVT uburyo bwerekanwe

Ibisobanuro bigufi:

Itanura rya Silicon karbide irwanya itanura (uburyo bwa PVT, uburyo bwo kohereza imyuka yumubiri) nigikoresho cyingenzi cyo gukura kwa karubide ya silicon (SiC) kristu imwe hamwe nubushyuhe bwo hejuru sublimation-recrystallization. Ikoranabuhanga rikoresha ubushyuhe bwo kurwanya (grafite ya grafite) kugirango igabanye ibikoresho fatizo bya SiC ku bushyuhe bwo hejuru bwa 2000 ~ 2500 and, hanyuma yongere yongere yongere mu karere k'ubushyuhe buke (kristu y'imbuto) kugira ngo ibe nziza cyane ya SiC imwe (4H / 6H-SiC). Uburyo bwa PVT nuburyo bwibanze bwo gukora cyane kubutaka bwa SiC bwa santimetero 6 na munsi, bukoreshwa cyane mugutegura insimburangingo yo gutangiza amashanyarazi (nka MOSFETs, SBD) nibikoresho bya radiyo (GaN-kuri-SiC).

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Ihame ry'akazi ：

1. Ibikoresho bipakurura ibintu: ifu yuzuye ya SiC ifu (cyangwa guhagarika) ishyizwe munsi ya grafite ikomeye (zone yubushyuhe bwo hejuru).

2. Vacuum / inert ibidukikije: vuga icyumba cya feri (<10⁻³ mbar) cyangwa unyuze gaze ya inert (Ar).

3. Ubushyuhe bwo hejuru bukabije: gushyushya ubushyuhe kugeza 2000 ~ 2500 ℃, kubora kwa SiC muri Si, Si₂C, SiC₂ nibindi bice bya gaz.

4. Ikwirakwizwa rya gazi: ubushyuhe bwikigereranyo butera ikwirakwizwa ryibintu bya gaze mukarere gake (impera yimbuto).

5. Gukura kwa Crystal: Icyiciro cya gaze cyongeye kwisubiraho hejuru yimbuto ya Crystal kandi gikura mucyerekezo cyerekezo C-axis cyangwa A-axis.

Ibipimo by'ingenzi:

1. Ikigereranyo cy'ubushyuhe: 20 ~ 50 ℃ / cm (kugenzura umuvuduko wo gukura n'ubucucike bw'inenge).

2. Umuvuduko: 1 ~ 100mbar (umuvuduko muke wo kugabanya kwinjiza umwanda).

3.Ikigereranyo cyubwiyongere: 0.1 ~ 1mm / h (bigira ingaruka kumiterere ya kristu no gukora neza).

Ibyingenzi byingenzi:

(1) Ubwiza bwa Crystal
Ubucucike buke: Ubucucike bwa microtubule <1 cm⁻², ubucucike bwa dislocation 10³ ~ 10⁴ cm⁻² (binyuze muburyo bwo guhuza imbuto no kugenzura inzira).

Igenzura ryubwoko bwa polycrystalline: rishobora gukura 4H-SiC (nyamukuru), 6H-SiC, igipimo cya 4H-SiC> 90% (ukeneye kugenzura neza ubushyuhe bwikigereranyo hamwe na gaze ya stoichiometric).

(2) Imikorere y'ibikoresho
Ubushyuhe bwo hejuru: ubushyuhe bwa grafite ubushyuhe bwumubiri> 2500 ℃, umubiri w itanura ufata igishushanyo mbonera cyinshi (nka grafite yumva + ikoti ikonjesha amazi).

Kugenzura uburinganire: Ubushyuhe bwa Axial / radial ihindagurika rya ± 5 ° C byemeza ko diameter ihagaze neza (gutandukana kwa santimetero 6 z'uburebure <5%).

Impamyabumenyi yo gutangiza: Sisitemu yo kugenzura PLC ihuriweho, kugenzura igihe nyacyo cy'ubushyuhe, umuvuduko n'umuvuduko.

(3) Ibyiza byikoranabuhanga
Gukoresha ibikoresho byinshi: igipimo cyibikoresho byo guhindura> 70% (biruta uburyo bwa CVD).

Ingano nini ihuza: umusaruro wa santimetero 6 wakozwe, intambwe-8 iri murwego rwiterambere.

(4) Gukoresha ingufu nigiciro
Ingufu zikoreshwa mu itanura rimwe ni 300 ~ 800kW · h, bingana na 40% ~ 60% byumusaruro wa SiC substrate.

Ishoramari ryibikoresho ni ryinshi (1.5M 3M kuri buri gice), ariko igiciro cya substrate yikiguzi kiri munsi yuburyo bwa CVD.

Porogaramu nyamukuru:

1. Imbaraga za elegitoroniki: SiC MOSFET substrate ya moteri yimodoka ihinduranya hamwe na fotora ya fotora.

2. Ibikoresho bya Rf: 5G base base GaN-kuri-SiC epitaxial substrate (cyane cyane 4H-SiC).

Ibipimo bya tekiniki ：

Ibisobanuro	Ibisobanuro
Ibipimo (L × W × H)	2500 × 2400 × 3456 mm cyangwa guhitamo
Diameter	900 mm
Umuvuduko ukabije wa Vacuum	6 × 10⁻⁴ Pa (nyuma ya 1.5h ya vacuum)
Igipimo cyo kumeneka	Pa5 Pa / 12h (guteka)
Kuzunguruka Shaft Diameter	Mm 50
Umuvuduko wo kuzunguruka	0.5-5 rpm
Uburyo bwo gushyushya	Gushyushya amashanyarazi
Ubushyuhe ntarengwa	2500 ° C.
Ubushyuhe	40 kW × 2 × 20 kW
Igipimo cy'ubushyuhe	Amabara abiri ya infragre pyrometero
Ubushyuhe	900–3000 ° C.
Ubushyuhe Bwuzuye	± 1 ° C.
Urwego rw'ingutu	1-700 mbar
Kugenzura Imyuka	1-10 mbar: ± 0.5% FS; 10–100 mbar: ± 0.5% FS; 100-700 mbar: ± 0.5% FS
Ubwoko bw'imikorere	Gupakira hepfo, intoki / uburyo bwumutekano bwikora
Ibiranga amahitamo	Ibipimo byubushyuhe bubiri, ahantu hashyuha

Serivisi za XKH:

XKH itanga serivisi zose zikozwe mu itanura rya SiC PVT, harimo ibikoresho byo gutunganya ibikoresho (igishushanyo mbonera cyumuriro, kugenzura byikora), guteza imbere inzira (kugenzura imiterere ya kristu, kugenzura inenge), amahugurwa ya tekiniki (gukora no kuyitaho) hamwe ninkunga yo kugurisha (ibice bya grafite, gusimbuza amashanyarazi) Dutanga kandi serivisi zo kuzamura ibikorwa kugirango dukomeze kunoza umusaruro wa kristu no gukora neza, hamwe nigihe cyo kuyobora amezi 3-6.