Uburyo bwa PVT bwo kurwanya karubide ya silikoni burebure bukura bwa santimetero 6/8/12

Ifuru ndende ya kristalo irwanya karuboni ya silikoni ikura 6/8/12 inch SiC ingot crystal PVT method Ishusho yagaragaye

Ibisobanuro bigufi:

Ifuru yo gukuraho karubide ya silikoni (uburyo bwa PVT, uburyo bwo kohereza umwuka ushyushye) ni igikoresho cy'ingenzi mu gukura kwa kristu imwe ya silikoni (SiC) hakoreshejwe ihame ryo kongera gushyushya no kongera gushyushya. Iri koranabuhanga rikoresha ubushyuhe bwo gushyushya (ubushyuhe bwa grafiti) kugira ngo rishyire hasi ibikoresho bya SiC ku bushyuhe buri hejuru bwa 2000 ~ 2500℃, kandi rigasubiramo mu gace k'ubushyuhe buke (kristu y'imbuto) kugira ngo hakorwe kristu imwe ya SiC nziza cyane (4H / 6H-SiC). Uburyo bwa PVT ni bwo buryo bw'ingenzi bwo gukora ibintu bya SiC bya santimetero 12 no munsi yabyo, bukoreshwa cyane mu gutegura ibikoresho bya semiconductors zikoresha ingufu (nk'ama-MOSFET, SBD) n'ibikoresho bya radiyo (GaN-on-SiC).

Ohereza imeri kuri twe

Ibiranga

Ihame ry'imikorere:

1. Gushyira ibikoresho fatizo: ifu ya SiC (cyangwa bloki) isukuye cyane ishyirwa hasi ku gikoresho cya grafiti (ahantu hashyushye cyane).

2. Ahantu hadakoreshejwe umwuka uvamo umwuka/udakoresha umwuka uvamo umwuka: kuraho umwuka uvamo ...

3. Gushyushya ubushyuhe bwinshi: gushyushya kugeza kuri 2000 ~ 2500℃, Gusenyuka kwa SiC muri Si, Si₂C, SiC₂ n'ibindi bice bya gaze.

4. Gukwirakwiza gaze ku gice cy'ubushyuhe: ubushyuhe butuma ibikoresho bya gaze bikwirakwira mu gace k'ubushyuhe buke (ku mpera y'imbuto).

5. Gukura kwa kristu: Igice cya gaze cyongera kwiyongera ku buso bwa kristu y'imbuto hanyuma kigakura mu cyerekezo cy'icyerekezo ku murongo wa C cyangwa umurongo wa A.

Ibipimo by'ingenzi:

1. Ubushyuhe: 20~50℃/cm (kugenzura igipimo cy'ikura n'ubucucike bw'ibinure).

2. Umuvuduko: 1 ~ 100mbar (umuvuduko muke wo kugabanya umwanda wo kwinjiramo).

3. Igipimo cy'iterambere: 0.1 ~ 1mm / isaha (bigira ingaruka ku bwiza bwa kristale n'umusaruro wayo).

Ibiranga by'ingenzi:

(1) Ubwiza bwa kristu
Ubucucike buke: ubucucike bwa mikorotubule <1 cm⁻², ubucucike bwo kwimuka 10³~10⁴ cm⁻² (binyuze mu gutunganya imbuto no kugenzura uburyo zikorwa).

Uburyo bwo kugenzura ubwoko bwa polycrystalline: bushobora gukura 4H-SiC (isanzwe), 6H-SiC, 4H-SiC igipimo >90% (bugomba kugenzura neza ubushyuhe n'igipimo cya stoichiometric cya gaze).

(2) Imikorere y'ibikoresho
Ubushyuhe bwinshi: ubushyuhe bw'umubiri bushyuha bwa grafiti >2500℃, umubiri w'itanura ukoresha imiterere y'ubushyuhe bw'inyongera (nk'ikoti rya grafiti + ikoti rikonjeshwa n'amazi).

Kugenzura ubunini bw'ibipimo: Ihindagurika ry'ubushyuhe bw'imirongo/imirongo rya ± 5 ° C rituma umurambararo wa kristu uhoraho (ubugari bwa santimetero 6 <5%).

Ingano y'imikorere y'ikoranabuhanga: Sisitemu ihuriweho yo kugenzura PLC, kugenzura ubushyuhe mu buryo nyabwo, igitutu n'umuvuduko w'izamuka ry'imashini.

(3) Ibyiza by'ikoranabuhanga
Ikoreshwa ry'ibikoresho byinshi: igipimo cyo guhindura ibikoresho fatizo >70% (biruta uburyo bwa CVD).

Ingano nini: Umusaruro wa santimetero 6 wagezweho, santimetero 8 ziri mu cyiciro cyo gutera imbere.

(4) Ikoreshwa ry'ingufu n'ikiguzi
Ingufu zikoreshwa mu itanura rimwe ni 300~800kW·h, zikaba zingana na 40%~60% by'ikiguzi cyo gukora substrate ya SiC.

Ishoramari ry'ibikoresho riri hejuru (1.5M 3M kuri buri gikoresho), ariko ikiguzi cy'igice cy'ibikoresho kiri hasi ugereranije n'uburyo bwa CVD.

Porogaramu z'ingenzi:

1. Ibyuma by'ikoranabuhanga bikoresha ingufu: SiC MOSFET substrate yo gukoresha inverter y'amashanyarazi y'imodoka na inverter y'amashanyarazi.

2. Ibikoresho bya Rf: 5G base station GaN-on-SiC epitaxial substrate (cyane cyane 4H-SiC).

3. Ibikoresho biremereye cyane: ibikoresho bipima ubushyuhe bwinshi n'umuvuduko mwinshi ku bikoresho by'indege n'ingufu za kirimbuzi.

Ibipimo bya tekiniki:

Ibisobanuro	Ibisobanuro birambuye
Ingano (Ub × Ub × Ub)	2500 × 2400 × 3456 mm cyangwa uhindure
Ingano y'umurambararo	mm 900
Umuvuduko wa nyuma w'umwuka uvamo umwuka	6 × 10⁻⁴ Pa (nyuma y'isaha 1.5 yo gukoresha imashini ifunze)
Igipimo cyo gusohoka	≤5 Pa/amasaha 12 (guteka)
Ingano y'umugozi uzenguruka	mm 50
Umuvuduko wo Kuzenguruka	0.5–5 rpm
Uburyo bwo Gushyushya	Gushyushya birwanya amashanyarazi
Ubushyuhe ntarengwa bw'itanura	2500°C
Ingufu zo Gushyushya	40 kW × 2 × 20 kW
Igipimo cy'ubushyuhe	Pirometero ya infrared ifite amabara abiri
Ingano y'ubushyuhe	900–3000°C
Ubushyuhe butarimo amakosa	± 1°C
Ingano y'igitutu	1–700 mbar
Uburyo bwo kugenzura umuvuduko neza	1–10 mbar: ± 0.5% FS; 10–100 mbar: ± 0.5% FS; 100–700 mbar: ± 0.5% FS
Ubwoko bw'imikorere	Uburyo bwo gupakira hasi, intoki/uburyo bwo kwirinda bwikora
Ibiranga bitari ngombwa	Ibipimo by'ubushyuhe bibiri, ahantu henshi hashyuha

Serivisi za XKH:

XKH itanga serivisi zose z’ibikoresho bya SiC PVT, harimo guhindura ibikoresho (igishushanyo mbonera cy’ubutaka bushyuha, kugenzura byikora), guteza imbere uburyo bwo gukora (kugenzura imiterere ya kristale, kunoza ubusembwa), amahugurwa ya tekiniki (gukoresha no kubungabunga) n’inkunga nyuma yo kugurisha (gusimbuza ibice bya grafiti, gupima ubushyuhe bw’ubutaka) kugira ngo ifashe abakiriya kugera ku musaruro mwiza wa kristale. Dutanga kandi serivisi zo kuvugurura uburyo bwo gukora kugira ngo turusheho kunoza umusaruro wa kristale no gukura neza, mu gihe gisanzwe cy’amezi 3-6.