Silicon Carbide SiC Ingot 6inch N Ubwoko bwa Dummy / urwego rwibanze rwibanze rushobora ba gutegurwa

Silicon Carbide SiC Ingot 6inch N Ubwoko bwa Dummy / urwego rwibanze rwibanze rushobora ba bahinduye Ishusho Yihariye

Ibisobanuro bigufi:

Silicon Carbide (SiC) nigikoresho kinini cya semiconductor igenda yiyongera cyane mubikorwa bitandukanye kubera amashanyarazi, ubushyuhe, nubukanishi. SiC Ingot muri santimetero 6 N-D-Dummy / Prime icyiciro cyagenewe cyane cyane kubyara ibikoresho bigezweho bya semiconductor, harimo imbaraga nyinshi kandi zikoreshwa cyane. Hamwe nuburyo bwihariye bwo guhitamo hamwe nibisobanuro nyabyo, iyi SiC ingot itanga igisubizo cyiza mugutezimbere ibikoresho bikoreshwa mumashanyarazi, sisitemu yingufu zinganda, itumanaho, nizindi nzego zikora neza. Ubukomezi bwa SiC mumashanyarazi menshi, ubushyuhe bwinshi, hamwe ninshuro nyinshi zituma imikorere iramba, ikora neza, kandi yizewe mubikorwa bitandukanye.
SiC Ingot iraboneka mubunini bwa santimetero 6, ifite diameter ya 150.25mm ± 0,25mm n'ubugari burenze 10mm, bigatuma biba byiza gukata wafer. Iki gicuruzwa gitanga icyerekezo gisobanutse neza cya 4 ° yerekeza kuri <11-20> ± 0.2 °, byemeza neza neza muguhimba ibikoresho. Byongeye kandi, ingot iranga icyerekezo cyibanze cya <1-100> ± 5 °, bigira uruhare muburyo bwiza bwo guhuza no gutunganya imikorere.
Hamwe no kurwanya cyane murwego rwa 0.015–0.0285 Ω · cm, ubukana bwa micropipe nkeya ya <0.5, hamwe nubwiza buhebuje, iyi SiC Ingot ikwiranye no gukora ibikoresho byamashanyarazi bisaba inenge nkeya kandi bikora cyane mubihe bikabije.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Ibyiza

Icyiciro: Icyiciro cy'umusaruro (Dummy / Prime)
Ingano: diametero 6
Diameter: 150.25mm ± 0,25mm
Umubyimba:> 10mm (Ubunini bwihariye bushobora kuboneka ubisabye)
Icyerekezo cy'ubuso: 4 ° yerekeza kuri <11-20> ± 0.2 °, itanga ubuziranenge bwo hejuru bwa kirisiti kandi ihuza neza ibihimbano.
Icyerekezo cya Flat Icyerekezo: <1-100> ± 5 °, ikintu cyingenzi cyo gukata neza ingot muri wafers no gukura neza kwa kristu.
Uburebure bwa Flat Uburebure: 47.5mm ± 1.5mm, yagenewe gukora byoroshye no gukata neza.
Kurwanya: 0.015–0.0285 Ω · cm, nibyiza kubisabwa mubikoresho bikoresha ingufu nyinshi.
Ubucucike bwa Micropipe: <0.5, kwemeza inenge nkeya zishobora kugira ingaruka kumikorere yibikoresho byahimbwe.
BPD (Boron Pitting Density): <2000, agaciro gake kerekana ubuziranenge bwa kirisiti hamwe nubucucike buke.
TSD.
Agace ka polytype: Ntanumwe - ingot idafite inenge ya polytype, itanga ubuziranenge bwibikoresho byo murwego rwohejuru.
Ibice byerekana: <3, hamwe na 1mm z'ubugari n'uburebure, byemeza ko byangiritse ku buso no gukomeza ubusugire bwa ingot yo gukata neza wafer.
Ibice byo ku nkombe: 3, <1mm buri kimwe, hamwe no kugaragara kwangiritse kwangirika, kugenzura neza no gutunganya neza.
Gupakira: Ikariso ya Wafer - ingofero ya SiC ipakiwe neza murwego rwa wafer kugirango habeho gutwara no gutwara neza.

Porogaramu

Amashanyarazi:Ingano ya santimetero 6 ya SiC ikoreshwa cyane mugukora ibikoresho bya elegitoroniki byamashanyarazi nka MOSFETs, IGBTs, na diode, nibintu byingenzi muri sisitemu yo guhindura amashanyarazi. Ibi bikoresho bikoreshwa cyane mumashanyarazi (EV) inverter, moteri yinganda, ibikoresho byamashanyarazi, hamwe na sisitemu yo kubika ingufu. Ubushobozi bwa SiC bwo gukora kuri voltage nyinshi, inshuro nyinshi, hamwe nubushyuhe bukabije bituma biba byiza mubisabwa aho ibikoresho bya silicon gakondo (Si) byaharanira gukora neza.

Ibinyabiziga by'amashanyarazi (EV):Mu binyabiziga byamashanyarazi, ibice bishingiye kuri SiC nibyingenzi mugutezimbere ingufu z'amashanyarazi muri inverters, DC-DC ihindura, hamwe na charger zo mu ndege. Ubushuhe buhebuje bwa SiC butuma ubushyuhe bugabanuka no gukora neza muguhindura ingufu, ningirakamaro mukuzamura imikorere no gutwara ibinyabiziga byamashanyarazi. Byongeye kandi, ibikoresho bya SiC bifasha ibice bito, byoroshye, nibindi byizewe, bigira uruhare mubikorwa rusange bya sisitemu ya EV.

Sisitemu y'ingufu zishobora kuvugururwa:Ibikoresho bya SiC nibikoresho byingenzi mugutezimbere ibikoresho bihindura ingufu zikoreshwa muri sisitemu y’ingufu zishobora kuvugururwa, harimo imirasire y'izuba, imirasire y’umuyaga, hamwe n’ibisubizo bibika ingufu. Ubushobozi buhanitse bwo gukoresha ingufu za SiC hamwe nubuyobozi bukoresha neza ubushyuhe butuma imbaraga zihindura ingufu kandi zizewe muri sisitemu. Ikoreshwa ryayo mungufu zishobora kongera imbaraga zifasha gutwara imbaraga zisi yose kugirango ingufu zirambye.

Itumanaho:Ingano ya santimetero 6 ya SiC nayo irakwiriye kubyara ibice bikoreshwa mumashanyarazi menshi ya RF (radio radio). Harimo ibyuma byongera imbaraga, oscillator, hamwe nayunguruzo bikoreshwa mubitumanaho hamwe na sisitemu yitumanaho. Ubushobozi bwa SiC bwo gukoresha imirongo myinshi nimbaraga nyinshi bituma iba ibikoresho byiza kubikoresho byitumanaho bisaba imikorere ikomeye no gutakaza ibimenyetso bike.

Ikirere n'Ingabo:Umuvuduko mwinshi wa SiC hamwe no guhangana nubushyuhe bwo hejuru bituma biba byiza mubyogajuru hamwe nibisabwa. Ibigize bikozwe mu bikoresho bya SiC bikoreshwa muri sisitemu ya radar, itumanaho rya satellite, hamwe n’ikoranabuhanga rya elegitoronike mu ndege no mu cyogajuru. Ibikoresho bishingiye kuri SiC bifasha sisitemu zo mu kirere gukora mubihe bikabije byahuye nikirere hamwe nubutumburuke buri hejuru.

Gukoresha inganda:Mu nganda zikoresha inganda, ibice bya SiC bikoreshwa muri sensor, moteri, na sisitemu yo kugenzura ikeneye gukorera ahantu habi. Ibikoresho bishingiye kuri SiC bikoreshwa mumashini zisaba ibikoresho bikora neza, biramba birashobora kwihanganira ubushyuhe bwinshi hamwe ningutu zamashanyarazi.

Imbonerahamwe yerekana ibicuruzwa

Umutungo	Ibisobanuro
Icyiciro	Umusaruro (Dummy / Prime)
Ingano	6-cm
Diameter	150.25mm ± 0,25mm
Umubyimba	> 10mm (Customizable)
Icyerekezo cy'ubuso	4 ° yerekeza kuri <11-20> ± 0.2 °
Icyerekezo Cyibanze	<1-100> ± 5 °
Uburebure bwibanze	47.5mm ± 1.5mm
Kurwanya	0.015–0.0285 Ω · cm
Ubucucike bwa Micropipe	<0.5
Ubucucike bwa Boron (BPD)	<2000
Ubudodo bwo Gutandukanya Ubucucike (TSD)	<500
Uturere twa polytype	Nta na kimwe
Ibice byerekana	<3, 1mm z'ubugari n'uburebure
Impera	3, <1mm / ea
Gupakira	Urubanza rwa Wafer

Umwanzuro

SiC Ingot-6-N-Ubwoko bwa Dummy / Prime icyiciro ni ibikoresho bihebuje byujuje ibyangombwa bisabwa ninganda ziciriritse. Ubushyuhe bukabije bwumuriro, kutarwanya bidasanzwe, hamwe nubucucike buke butuma bihitamo neza kubyara ibikoresho bya elegitoroniki bigezweho, ibikoresho byimodoka, sisitemu yitumanaho, hamwe na sisitemu yingufu zishobora kuvugururwa. Ubunini bwihariye bushobora gusobanurwa neza byerekana neza ko iyi SiC ingot ishobora guhuzwa nurwego rwinshi rwa porogaramu, ikemeza imikorere ihanitse kandi yizewe mubidukikije. Kubindi bisobanuro cyangwa gutanga itegeko, nyamuneka hamagara itsinda ryacu ryo kugurisha.