Silicon Carbide (SiC) Substrate imwe-Crystal Substrate - 10 × 10mm Wafer

Ibisobanuro bigufi:

10 × 10mm ya Silicon Carbide (SiC) imwe-kristal ya substrate wafer ni ibikoresho byifashishwa cyane bya semiconductor yagenewe ibisekuruza bizaza bya elegitoroniki hamwe na optoelectronic. Kugaragaza ubushyuhe budasanzwe bwumuriro, kwaguka kwagutse, hamwe n’imiti ihamye y’imiti, SiC substrates itanga umusingi wibikoresho bikora neza munsi yubushyuhe bwinshi, inshuro nyinshi, hamwe nubushyuhe bukabije. Izi substrate zirasobanutse neza muri 10 × 10mm za chip kare, nibyiza kubushakashatsi, prototyping, no guhimba ibikoresho.

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Ibiranga

Igishushanyo kirambuye cya Silicon Carbide (SiC) substrate wafer

Incamake ya Silicon Carbide (SiC) substrate wafer

Uwiteka10 × 10mm Silicon Carbide (SiC) imwe-kristal substrate waferni ibikoresho-bikoresha cyane igice cya kabiri cyateguwe kubisekuru bizakurikiraho imbaraga za electronics hamwe na optoelectronic progaramu. Kugaragaza ubushyuhe budasanzwe bwumuriro, kwaguka kwagutse, hamwe nubushakashatsi buhebuje bwimiti, Silicon Carbide (SiC) substrate wafer itanga umusingi wibikoresho bikora neza munsi yubushyuhe bwinshi, inshuro nyinshi, hamwe nubushyuhe bukabije. Izi substrate zirasobanutse neza10 × 10mm ya chip kare, nibyiza kubushakashatsi, prototyping, no guhimba ibikoresho.

Ihame ry'umusaruro wa Silicon Carbide (SiC) substrate wafer

Silicon Carbide (SiC) substrate wafer ikorwa hifashishijwe ubwikorezi bwa Vapor Transport (PVT) cyangwa uburyo bwo gukura bwa sublimation. Inzira itangirana na poro ya SiC yuzuye yuzuye muri grafite ikomeye. Mu gihe cy'ubushyuhe bukabije burenga 2000 ° C hamwe n’ibidukikije bigenzurwa, ifu igabanuka mu byuka hanyuma ikongera ikabishyira kuri kirisiti yimbuto yitonze, ikagira ingobyi nini, yagabanutse.

SiC boule imaze gukura, iba:

Gukata Ingot: Amashanyarazi meza ya diyama yatemye SiC ingot muri wafer cyangwa chip.

Gufata no gusya: Ubuso burambuye kugirango ukureho ibimenyetso byabonye kandi bigere ku bunini bumwe.

Imashini ya mashini (CMP): Kugera kuri epi-yiteguye indorerwamo irangiza hamwe n'ubuso buke cyane.

Doping itabishaka: Azote, aluminium, cyangwa borop doping irashobora kwerekanwa kugirango ihuze ibikoresho byamashanyarazi (n-ubwoko cyangwa p-ubwoko).

Ubugenzuzi bufite ireme: Metrology yateye imbere itanga uburinganire bwa wafer, uburinganire bwuburinganire, hamwe nubucucike bwinenge byujuje ibyangombwa bisabwa byicyiciro cya kabiri.

Iyi nzira yintambwe nyinshi itera 10 × 10mm ya Silicon Carbide (SiC) substrate wafer chip yiteguye gukura epitaxial cyangwa guhimba ibikoresho bitaziguye.

Ibiranga ibikoresho bya Silicon Carbide (SiC) substrate wafer

Silicon Carbide (SiC) substrate wafer ikozwe mbere na mbere4H-SiC or 6H-SiCpolytypes:

4H-SiC:Ibiranga umuvuduko mwinshi wa electron, bigatuma biba byiza kubikoresho byamashanyarazi nka MOSFETs na Schottky diode.
6H-SiC:Tanga ibintu byihariye kuri RF hamwe nibikoresho bya optoelectronic.

Ibyingenzi byingenzi bya Silicon Carbide (SiC) substrate wafer:

Umugozi mugari:~ 3.26 eV (4H-SiC) - ituma imbaraga zo kumeneka cyane hamwe nigihombo gito cyo guhinduranya.
Amashanyarazi:3–4.9 W / cm · K - ikwirakwiza ubushyuhe neza, igahagarara neza muri sisitemu ikomeye.
Gukomera:~ 9.2 ku gipimo cya Mohs - itanga igihe kirekire mu gihe cyo gutunganya no gukora ibikoresho.

Porogaramu ya Silicon Carbide (SiC) substrate wafer

Ubwinshi bwa Silicon Carbide (SiC) substrate wafer butuma bagira agaciro mubikorwa byinshi:

Amashanyarazi ya elegitoronike: Ishingiro rya MOSFETs, IGBTs, na Schottky diode ikoreshwa mumodoka zikoresha amashanyarazi (EV), amashanyarazi yinganda, hamwe ningufu zishobora kuvugururwa.

Ibikoresho bya RF & Microwave: Bishyigikira tristoriste, amplifier, hamwe na radar yibikoresho bya 5G, satelite, hamwe na porogaramu zo kwirwanaho.

Optoelectronics: Ikoreshwa muri UV LED, Photodetector, na diode ya laser aho UV ikorera mu mucyo no guhagarara neza.

Ikirere & Defence: Substrate yizewe kubushyuhe bwo hejuru, imirasire ikaze ya elegitoroniki.

Ibigo byubushakashatsi & Kaminuza: Nibyiza kubushakashatsi bwibintu bya siyansi, iterambere ryibikoresho bya prototype, no kugerageza inzira nshya.

Ibisobanuro bya Caricon Carbide (SiC) substrate wafer Chips

Umutungo	Agaciro
Ingano	10mm × 10mm kare
Umubyimba	330–500 mm (byemewe)
Polytype	4H-SiC cyangwa 6H-SiC
Icyerekezo	C-indege, hanze-axis (0 ° / 4 °)
Kurangiza	Uruhande rumwe cyangwa uruhande rumwe rusizwe; epi-yiteguye irahari
Amahitamo ya Doping	N-Ubwoko cyangwa P-Ubwoko
Icyiciro	Urwego rwubushakashatsi cyangwa urwego rwibikoresho

Ibibazo bya Silicon Carbide (SiC) substrate wafer

Q1: Niki gituma Silicon Carbide (SiC) substrate wafer iruta wafer ya silicon gakondo?
SiC itanga 10 × hejuru yo kumeneka imbaraga zumurima, kwihanganira ubushyuhe burenze, hamwe no gutakaza igihombo cyo hasi, bigatuma biba byiza cyane, ibikoresho byimbaraga nyinshi silicon idashobora gushyigikira.

Q2: Wafer ya 10 × 10mm ya Silicon Carbide (SiC) substrate wafer ishobora gutangwa hamwe na epitaxial?
Yego. Dutanga epi-yiteguye kandi turashobora gutanga wafer hamwe na epitaxial layer yihariye kugirango tubone ibikoresho byamashanyarazi cyangwa LED ikenera.

Q3: Ingano yihariye ninzego za doping zirahari?
Rwose. Mugihe chip 10 × 10mm zisanzwe mubushakashatsi no gutoranya ibikoresho, ibipimo byabigenewe, ubunini, hamwe na doping imyirondoro iraboneka ubisabwe.

Q4: Izi wafer zimara igihe kingana iki mubidukikije bikabije?
SiC ikomeza ubunyangamugayo n’imikorere y’amashanyarazi hejuru ya 600 ° C no munsi y’imirasire ikabije, bigatuma biba byiza mu kirere no mu bya elegitoroniki yo mu rwego rwa gisirikare.

Ibyerekeye Twebwe

XKH kabuhariwe mu iterambere ry’ikoranabuhanga rikomeye, gukora, no kugurisha ibirahuri bidasanzwe bya optique hamwe nibikoresho bishya bya kristu. Ibicuruzwa byacu bitanga ibikoresho bya elegitoroniki, ibikoresho bya elegitoroniki, n'abasirikare. Dutanga ibice bya optique ya optique, igifuniko cya terefone igendanwa, Ceramics, LT, Silicon Carbide SIC, Quartz, hamwe na semiconductor kristal wafers. Hamwe n'ubuhanga buhanga hamwe nibikoresho bigezweho, turi indashyikirwa mugutunganya ibicuruzwa bitari bisanzwe, tugamije kuba ibikoresho bya optoelectronic ibikoresho byubuhanga buhanitse.