Ubwato bwa Silicon Carbide (SiC) Wafer

Ibisobanuro bigufi:

Ubwato bwa Silicon Carbide (SiC) wafer ni ubwato butwara ibintu bya semiconductor bukozwe mu bikoresho bya SiC bifite isuku nyinshi, byagenewe gufata no gutwara wafer mu gihe cy’ibikorwa by’ingenzi birimo ubushyuhe bwinshi nko mu gushyuha cyane, gutwika, gukwirakwiza no gufunga.

Ohereza imeri kuri twe

Ibiranga

Ishusho irambuye

Incamake y'ikirahure cya Quartz

Bitewe n’iterambere ryihuse rya semiconductors zikoresha ingufu n’ibikoresho binini bya bandgap, ubwato busanzwe bwa quartz buhura n’imbogamizi nko guhinduka kw’ubushyuhe bwinshi, kwandura gukabije kw’uduce duto, no kumara igihe gito bukora. Ubwato bwa SiC, bufite ubushyuhe buhamye, ubwandu buke, kandi bumara igihe kirekire, buri kugenda busimbura ubwato bwa quartz kandi buhinduka amahitamo akunzwe cyane mu gukora ibikoresho bya SiC.

Ibiranga by'ingenzi

1. Ibyiza by'ibikoresho

Yakozwe muri SiC ifite isuku nyinshi hamwegukomera no gukomera cyane.
Ubushyuhe burenze 2700°C, burenga cyane quartz, bigatuma habaho ituze ry’igihe kirekire mu bidukikije bikomeye.

2. Imiterere y'ubushyuhe

Ubushyuhe bwinshi butuma ubushyuhe bwihuta kandi bungana, bigabanya umuvuduko wa wafer.
Igipimo cy’ubushyuhe (CTE) gihuye neza na substrates za SiC, bigabanya gupfukama no kwangirika kw’ingufu.

3. Guhagarara neza kw'ibinyabutabire

Ihamye mu gihe cy'ubushyuhe bwinshi n'ikirere gitandukanye (H₂, N₂, Ar, NH₃, n'ibindi).
Ubudahangarwa bwiza bwo kurwanya ogisijeni, burinda kubora no gukora uduce duto.

4. Imikorere y'Ibikorwa

Ubuso bworoshye kandi bunini bugabanya gushonga no kwanduza uduce duto tw’ibimera.
Igumana ubushobozi bwo guhagarara neza no gutwara ibintu nyuma yo kubikoresha igihe kirekire.

5. Kunoza Ikiguzi

Igihe cyo gukora cy’ubwato bwa quartz kiruta inshuro 3–5.
Kugabanya inshuro zo kubungabunga, bigabanya igihe cyo gukora no gusimbuza.

Porogaramu

SiC Epitaxy: Gushyigikira substrates za SiC za santimetero 4, santimetero 6, na santimetero 8 mu gihe cy'ikura ry'ubushyuhe bwinshi mu gice cy'imbere cy'inyuma.
Gukora Ibikoresho by'Ingufu: Ni nziza kuri SiC MOSFET, Schottky Barrier Diodes (SBDs), IGBTs, n'ibindi bikoresho.
Ubuvuzi bw'ubushyuhe: Uburyo bwo gukurura, gutera nitride, no gukwirakwiza karuboni.
Gusohora ogisijeni n'ikwirakwira ry'ibinyabutabire: Urubuga ruhamye rwo gushyigikira wafer kugira ngo ishyushye cyane kandi ikwirakwizwe.

Ibisobanuro bya tekiniki

Ikintu	Ibisobanuro
Ibikoresho	Karubide ya Silicon ifite isuku nyinshi (SiC)
Ingano ya Wafer	Santimetero 4 / Santimetero 6 / Santimetero 8 (ishobora guhindurwa)
Ubushyuhe ntarengwa bwo gukora.	≤ 1800°C
CTE yo kwagura ubushyuhe	4.2 × 10⁻⁶ /K (hafi ya substrate ya SiC)
Ubushobozi bwo gutwara ubushyuhe	120–200 W/m·K
Ubukana bw'ubuso	Ra < 0.2 μm
Kubangikanya ibintu	± 0.1 mm
Ubuzima bwa serivisi	≥ 3× burebure kurusha ubwato bwa quartz

Kugereranya: Ubwato bwa Quartz vs. Ubwato bwa SiC

Ingano	Ubwato bwa Quartz	Ubwato bwa SiC
Ubudahangarwa bw'ubushyuhe	≤ 1200°C, guhinduka kw'ikirere ku bushyuhe bwinshi.	≤ 1800°C, ubushyuhe buhamye
Umukino wa CTE na SiC	Kutajyana neza cyane, ibyago byo kugira stress ya wafer	Bihuye neza, bigabanya gucika kw'ifi ya wafer
Kwanduza uduce duto tw'ibice	Hejuru, bitanga imyanda	Ubuso bwo hasi, bworoshye kandi bunini
Ubuzima bwa serivisi	Gusimbuza igihe gito kandi gikunze kubaho	Igihe kirekire, igihe kirekire kingana na 3–5×
Uburyo bukwiye	Ikoreshwa rya Si epitaxy	Yakozwe neza kuri SiC epitaxy n'ibikoresho by'amashanyarazi

Ibibazo Bikunze Kubazwa - Ubwato bwa Silicon Carbide (SiC) Wafer

1. Ubwato bwa SiC wafer ni iki?

Ubwato bwa SiC wafer ni ubwato butwara ibintu bya semiconductor bukozwe muri karubide ya silikoni ifite pure nyinshi. Bukoreshwa mu gufata no gutwara wafer mu gihe cy'ubushyuhe bwinshi nko mu bushyuhe bwinshi nka epitaxy, oxidation, diffusion, na annealing. Ugereranyije n'ubwato busanzwe bwa quartz, ubwato bwa SiC wafer butanga ubushyuhe buhamye, budahumanya ikirere, kandi bumara igihe kirekire.

2. Kuki wahitamo ubwato bwa SiC wafer kuruta ubwato bwa quartz?

Ubudahangarwa bw'ubushyuhe bwinshi: Ihamye kugeza kuri 1800°C ugereranije na quartz (≤1200°C).
Guhuza neza na CTE: Hafi ya substrates za SiC, bigabanya uburemere bw'umusemburo n'icikagurika.
Ikorwa ry'udukoko duto: Ubuso bworoshye kandi bunini bugabanya umwanda.
Igihe kirekire cyo kubaho: Inshuro 3–5 z'uburebure bw'ubwato bwa quartz, bigabanura ikiguzi cyo gutunga.

3. Ni ingano zingana iki za wafer zo mu bwato bwa SiC wafer zishobora gushyigikirwa?

Dutanga ibishushanyo mbonera bisanzwe kuriSantimetero 4, santimetero 6, na santimetero 8wafers, hamwe n'uburyo bwose bwo guhindura ibintu kugira ngo bihuze n'ibyo abakiriya bakeneye.

4. Ni mu buhe buryo ubwato bwa SiC bukunze gukoreshwa?

Iterambere rya SiC epitaxial
Gukora ibikoresho bya semiconductor bikoresha ingufu (SiC MOSFETs, SBDs, IGBTs)
Guteranya ubushyuhe bwinshi, nitridation, na carbonization
Uburyo bwo gusohora ogisijeni n'uburyo bwo gukwirakwiza

Ku bijyanye natwe

XKH yihariye mu iterambere, gukora, no kugurisha ikirahure cyihariye cya optique n'ibikoresho bishya bya kristu. Ibicuruzwa byacu bitanga ibikoresho by'ikoranabuhanga bya optique, ibikoresho by'ikoranabuhanga bikoreshwa n'abantu, n'ibya gisirikare. Dutanga ibikoresho bya optique bya Safira, ibifuniko bya lens za telefoni zigendanwa, Ceramics, LT, Silicon Carbide SIC, Quartz, na semiconductor crystal wafers. Dufite ubuhanga n'ibikoresho bigezweho, turakora neza mu gutunganya ibicuruzwa bitari iby'ubuziranenge, tugamije kuba ikigo gikomeye mu ikoranabuhanga rigezweho mu bikoresho bya optoelectronic.